Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX34/34A/34B/34C respectively 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter alue Units CBO Collector-Base oltage B CEO Collector-Emitter oltage B Collector Current (DC) A P *Collector Current (Pulse) 15 A I B Base Current 5 A P C Collector Dissipation (T C =25 C) 70 W T J Junction Temperature 150 C T STG Storage Temperature - 65 ~ 150 C
Electrical Characteristics T C =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units CEO (sus) * Collector-Emitter Sustaining oltage B = I B = 0 CER (sus) * Collector-Emitter Sustaining oltage B CE (sus) * Collector-Emitter Sustaining oltage B BO Collector Cut-off Current B EO Collector Cut-off Current B * Pulse Test: PW=300µs, duty Cycle =1.5% Pulse =, I B = 0 R BE = Ω =, I B = 0 BE = 1.5 CB =, I E = 0 CB =, I E = 0 CB =, I E = 0 CB =, I E = 0 CE = 22, I B = 0 CE = 30, I B = 0 CE = 40, I B = 0 CE = 50, I B = 0 I EBO Emitter Cut-off Current EB = 5, = 0 5 h FE * DC Current Gain /34 B/33C CE = 3, = 4A CE = 3, = 3A 750 750 CE (sat) BE (on) * Collector-Emitter Saturation oltage /33A B/33C * Base-Emitter ON oltage /33A B/33C = 4A, I B = 8 = 3A, I B = 6 CE = 3, = 4A CE = 3, = 3A F * Parallel Diode Forward oltage I F = 8A 4
Typical Characteristics h FE, DC CURRENT GAIN k k 1k CE = 3 CE (sat) [], SATURATION OLTAGE 1 = 250 I B 0.1 1 0.1 0.1 1 Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation oltage.0 0 CE = 3 f=1mhz I E =0 7.5 5.0 C ob [pf], CAPACTIANCE 0.0 0 1 2 3 4 1 BE [], BASE-EMITTER OLTAGE CB [], COLLECTOR-BASE OLTAGE Figure 3. Base-Emitter On oltage Figure 4. Output Capacitance 70 1 MAX. (Pulsed) MAX. (Continuous) 5 ms 1 ms us DC us BDX33 BDX33A BDX33B BDX33C 0.1 1 0 P D [W], POWER DISSIPATION 50 40 30 20 0 0 25 50 75 125 150 175 200 CE [], COLLECTOR-EMITTER OLTAGE Tc [ o C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating 2000 Fairchild Semiconductor International Rev. A, February 2000
Package Demensions TO-220 9.90 ±0 4.50 ±0 (1.70) 1.30 ±0. (8.70) ø3. ±0. 2. ±0. 1.30 +0. 0.05 9.20 ±0 13.08 ±0 (1.46) (1.00) 1.27 ±0. ( ) (3.00) (3.70) 15.90 ±0 1.52 ±0..08 ±0.30 18.95MAX. 4TYP [4 ±0] 0. ±0. 4TYP [4 ±0] 0 +0. 0.05 2.40 ±0.00 ±0 Dimensions in Millimeters
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSOLT E 2 CMOS FACT FACT Quiet Series FAST FASTr GTO HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC CX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 2000 Fairchild Semiconductor International Rev. E