TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP4A,TLP4A 2 TLP4A,TLP4A 2 Programmable Controllers AC / DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP4A and TLP4A 2 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP4A offers two isolated channels in a eight lead plastic DIP package, while the TLP4A 2 provides four isolated channels in a sixteen plastic DIP package. Collector emitter voltage: V (min.) Current transfer ratio: % (min.) Rank GB: % (min.) Isolation voltage: 2 Vrms (min.) UL recognized: UL77, File no. E6749 TOSHIBA Weight:.4 g C4 Pin Configurations (top view) TLP4A TLP4A-2 8 6 2 7 2 6 4 4 4, 4 : Anode 2, : Cathode, 8 : Emitter 6, 7 : Collector 2 6 7 TOSHIBA Weight:. g 2A 8 9, 4,, 8 : Anode 2,, 6, 7 : Cathode 9, 2,, 6 : Emitter,, 4, : Collector 22-9-2
TLP4A,TLP4A 2 Maximum Ratings (Ta = 2 C) LED Detector Characteristic Symbol TLP4A Rating TLP4A 2 Forward current I F 6 ma Forward current derating I F / C.7 (Ta 9 C). (Ta 2 C) ma / C Pulse forward current I FP (µs pulse, pps) A Reverse voltage V R V Junction temperature T j 2 C Collector emitter voltage V CEO V Emitter collector voltage V ECO 7 V Collector current I C ma Collector power dissipation ( circuit) Collector power dissipation derating ( circuit Ta 2 C) Unit P C mw P C / C.. mw / C Junction temperature T j 2 C Storage temperature range T stg ~ C Operating temperature range T opr ~ C Lead soldering temperature T sol 26 ( s) C Total package power dissipation R T 2 mw Total package power dissipation derating (Ta 2 C) P T / C 2.. mw / C Isolation voltage BV S 2 (AC, min., R.H. 6%) (Note ) Vrms (Note ) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min. Typ. Max. Unit Supply voltage V CC 24 V Forward current I F 6 2 ma Collector current I C ma Operating temperature T opr 2 8 C 2 22-9-2
TLP4A,TLP4A 2 Individual Electrical Characteristics (Ta = 2 C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = ma... V LED Detector Reverse current I R V R = V µa Capacitance C T V =, f = MHz pf Collector emitter breakdown voltage Emitter collector breakdown voltage Collector dark current Capacitance collector to emitter V (BR) CEO I C =. ma V V (BR) ECO I E =. ma 7 V I CEO V CE = 24 V na V CE = 24 V, Ta = 8 C 2 µa C CE V =, f = MHz pf Coupled Electrical Characteristics (Ta = 2 C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Current transfer ratio I C / I F I F = ma, V CE = V Rank GB Saturated CTR I C / I F (sat) IF = ma, V CE =.4 V Rank GB Collector emitter saturation voltage V CE (sat) 6 6 6 I C = 2.4 ma, I F = 8 ma.4 IC =.2 ma, I F = ma Rank GB.2.4 % % V Isolation Characteristics (Ta = 2 C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output C S V S =, f = MHz.8 pf Isolation resistance R S V S = V 4 Ω Isolation voltage BV S AC, minute 2 Vrms AC, second, in oil DC, minute, in oil Vdc 22-9-2
TLP4A,TLP4A 2 Switching Characteristics (Ta = 2 C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time t r 2 Fall time t f V CC = V, I C = 2 ma Turn on time t on R L = Ω Turn off time t off Turn on time t ON 2 Storage time t s R L =.9 kω (Fig.) V CC = V, I F = 6 ma Turn off time t OFF 2 µs µs Fig. Switching time test circuit I F R L V CC V CE I F V CE t S 4.V.V V CC t ON t OFF 4 22-9-2
TLP4A,TLP4A 2 2 I F Ta 24 P C Ta 2 Allowable forward current IF (ma) 8 6 4 TLP4A TLP4A-2 Allowable collector power dissipation PC (mw) 6 2 8 TLP4A TLP4A-2 2 4-2 2 4 6 8 2-2 2 4 6 8 2 Allowable pulse forward current IFP (ma) I FP D R Pulse width µs Ta = 2 Forward current IF (ma). Ta = 2 I F V F - -2 - Duty cycle ratio DR...4.6.8..2.4.6 Forward voltage VF (V) Forward voltage temperature coefficient ΔVF /ΔTa (mrv / ) -2.8-2.4-2. -.6 -.2 -.8 ΔV F /ΔTa I F Pulse forward current IFP (ma) Pulse width µs Repetitive frequency=hz Ta = 2 I FP V FP -.4...4.8..2.4.6 Forward current I F (ma) Pulse forward voltage VFP (V) 22-9-2
TLP4A,TLP4A 2 I CEO Ta 8 I C V CE Ta = 2 Collector dark current ICEO (μa) - -2 VCE = 24V V V Collector current IC (ma) 6 ma ma 2mA 4 ma ma P C(MAX.) 2 I F=mA 2 4 6 8 Collector-emitter voltage V CE (V) I C V CE - 2 ma 4mA ma Ta = 2-4 2 4 6 8 Ta = 2 C VCE = V VCE =.4V I C I F 2 Collector current IC (ma) 2 2mA ma ma I F=2mA.2.4.6.8..2.4 Collector current IC (ma)... SAMPLE A SAMPLE B Current transfer ratio IC / IF (%) SAMPLE B SAMPLE A Collector-emitter voltage V CE (V) I C / I F I F Ta = 2 C VCE = V VCE =.4V.... Forward current IF (ma) Forward current IF (ma) 6 22-9-2
TLP4A,TLP4A 2 Collector-emitter saturation voltage VCE(sat) (V).2.6.2.8.4 IF = ma IC = ma -2 V CE (sat) Ta 2 4 6 8 Collector current IC (ma) I C Ta 2mA ma ma ma VCE = V. IF =.ma. Ta = 2 C IF = 6mA VCC = V R L Switching Time. -2 2 4 6 8 Switching time (μs) toff ts ton Load resistance RL (kω) 7 22-9-2
TLP4A,TLP4A 2 RESTRICTIONS ON PRODUCT USE 77EBC TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 8 22-9-2
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