MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS TM OptiMOS 3PowerTransistor,V BSZ44NNS3G DataSheet Rev.2.1 Final PowerManagement&Multimarket
OptiMOSª3PowerTransistor,V BSZ44NNS3G 1Description Features Verylowgatechargeforhighfrequencyapplications Optimizedfordcdcconversion Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) 15 Coperatingtemperature Pbfreeleadplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplication HalogenfreeaccordingtoIEC61249221 1 2 S3O8 8 7 3 4 6 5 Table1KeyPerformanceParameters Parameter Value Unit VDS V RDS(on),max 44 mω ID 18 A S 1 S 2 S 3 G 4 8 D 7 D 6 D 5 D Type/OrderingCode Package Marking RelatedLinks BSZ44NNS3 G PGTSDSON8 44NN 1) JSTD2 and JESD22 2 Rev.2.1,21526
OptiMOSª3PowerTransistor,V BSZ44NNS3G TableofContents Description............................................................................. 2 Maximum ratings........................................................................ 4 Thermal characteristics.................................................................... 4 Electrical characteristics................................................................... 5 Electrical characteristics diagrams........................................................... 7 Package Outlines....................................................................... 11 Revision History........................................................................ 12 Disclaimer............................................................................ 12 3 Rev.2.1,21526
OptiMOSª3PowerTransistor,V BSZ44NNS3G 2Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings at 25 C Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Continuous drain current ID Pulsed drain current 2) ID,pulse 72 A TC=25 C 18 11 5.3 A TC=25 C TC= C TA=25 C,RthJA=5K/W 1) Avalanche energy, single pulse EAS 17 mj ID=12A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 29 W TC=25 C Operating and storage temperature Tj,Tstg 55 15 C IEC climatic category; DIN IEC 681: 55/15/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 4.3 K/W Thermal resistance, junction ambient, 6 cm 2 cooling area 1) RthJA 5 K/W 1) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 2) see figure 3 4 Rev.2.1,21526
OptiMOSª3PowerTransistor,V BSZ44NNS3G 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=12µA Zero gate voltage drain current IDSS.1 1 µa VDS=V,VGS=V,Tj=25 C VDS=V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance RG 1.5 Ω 38 48 44 86 mω VGS=V,ID=12A VGS=6V,ID=6A Transconductance gfs 8 15 S VDS >2 ID RDS(on)max,ID=12A Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance 1) Ciss 48 64 pf VGS=V,VDS=5V,f=1MHz Output capacitance 1) Coss 87 12 pf VGS=V,VDS=5V,f=1MHz Reverse transfer capacitance Crss 6 pf VGS=V,VDS=5V,f=1MHz Turnon delay time td(on) 4.3 ns Rise time tr 1.8 ns Turnoff delay time td(off) 9.1 ns Fall time tf 2. ns VDD=5V,VGS=V,ID=6A, RG=1.6Ω VDD=5V,VGS=V,ID=6A, RG=1.6Ω VDD=5V,VGS=V,ID=6A, RG=1.6Ω VDD=5V,VGS=V,ID=6A, RG=1.6Ω Table6Gatechargecharacteristics 2) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2.2 nc VDD=5V,ID=6A,VGS=toV Gate to drain charge Qgd 1.3 nc VDD=5V,ID=6A,VGS=toV Switching charge Qsw 2. nc VDD=5V,ID=6A,VGS=toV Gate charge total 1) Qg 6.8 9.1 nc VDD=5V,ID=6A,VGS=toV Gate plateau voltage Vplateau 4.5 V VDD=5V,ID=6A,VGS=toV Output charge 1) Qoss 9. 12 nc VDD=5V,VGS=V 1) Defined by design. Not subject to production test. 2) See Gate charge waveforms for parameter definition 5 Rev.2.1,21526
OptiMOSª3PowerTransistor,V BSZ44NNS3G Table7Reversediode Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Diode continous forward current IS 18 A TC=25 C Diode pulse current IS,pulse 72 A TC=25 C Diode forward voltage VSD 1 1.2 V VGS=V,IF=18A,Tj=25 C Reverse recovery time trr 44 ns VR=5V,IF=6A,diF/dt=A/µs Reverse recovery charge Qrr 61 nc VR=5V,IF=6A,diF/dt=A/µs 6 Rev.2.1,21526
OptiMOSª3PowerTransistor,V BSZ44NNS3G 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 4 Diagram2:Draincurrent 2 3 15 Ptot[W] 2 ID[A] 5 4 8 12 16 TC[ C] Ptot=f(TC) 4 8 12 16 TC[ C] ID=f(TC);VGS V Diagram3:Safeoperatingarea 3 Diagram4:Max.transientthermalimpedance 1 2 1 µs ns.5 ID[A] 1 µs µs ZthJC[K/W].2.1 1 ms DC.5.2.1 single pulse 1 1 1 2 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 5 4 3 2 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.1,21526
OptiMOSª3PowerTransistor,V BSZ44NNS3G Diagram5:Typ.outputcharacteristics 5 4 V 7 V Diagram6:Typ.drainsourceonresistance 7 5 V 6 5.5 V 6 V 7 V 5 ID[A] 3 2 5.5 V 6 V RDS(on)[mΩ] 4 3 V 4.5 V 5 V 2 1 2 3 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 2 3 4 5 6 ID[A] RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 4 Diagram8:Typ.forwardtransconductance 3 25 3 2 ID[A] 2 gfs[s] 15 15 C 25 C 5 2 4 6 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 5 15 2 25 3 ID[A] gfs=f(id);tj=25 C 8 Rev.2.1,21526
OptiMOSª3PowerTransistor,V BSZ44NNS3G Diagram9:Drainsourceonstateresistance 9 Diagram:Typ.gatethresholdvoltage 4. 8 3.5 RDS(on)[mΩ] 7 6 5 4 3 98 % typ VGS(th)[V] 3. 2.5 2. 1.5 12 µa 12 µa 2 1..5 6 2 2 6 14 18 Tj[ C] RDS(on)=f(Tj);ID=12A;VGS=V. 6 2 2 6 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances 4 Diagram12:Forwardcharacteristicsofreversediode 3 25 C 15 C 25 C, 98% 15 C, 98% 3 Ciss 2 C[pF] 2 Coss IF[A] 1 1 Crss 2 4 6 8 VDS[V] C=f(VDS);VGS=V;f=1MHz..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.1,21526
OptiMOSª3PowerTransistor,V BSZ44NNS3G Diagram13:Avalanchecharacteristics 2 Diagram14:Typ.gatecharge 8 8 V 5 V 6 IAS[A] 1 C 25 C VGS[V] 4 2 V 125 C 2 1 1 2 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 2 4 6 8 Qgate[nC] VGS=f(Qgate);ID=6Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 1 Gate charge waveforms 5 VBR(DSS)[V] 95 9 6 2 2 6 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA Rev.2.1,21526
OptiMOSª3 PowerTransistor, V BSZ44NNS3 G 6 Package Outlines Figure 1 Outline PGTSDSON8, dimensions in mm/inches 11 Rev. 2.1, 21526
OptiMOSª3 PowerTransistor, V BSZ44NNS3 G Revision History BSZ44NNS3 G Revision: 21526, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 21526 Insert pin numbered package drawing and trr and Qrr values We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany 215 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 Rev. 2.1, 21526