Transistor MOS. Ce Dossier comporte 10 pages comme suit : - Page 1 : Fonctionnement du transistor MOS

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1 Transistor MOS Ce Dossier comporte 10 pages comme suit : - Page 1 : Fonctionnement du transistor MOS - Pages 2 à 9 : Documentation constructeur VNP49N04 NOTA : Tous les documents fournis seront remis à la fin du TP.

2 TRANSISTORS MOS EN COMMUTATION Ce type de transistor fonctionne comme un interrupteur quasi parfait qui présente au passage du courant : Une résistance infinie lorsqu'il est bloqué (interrupteur ouvert). Une résistance quasi nulle (RDSon) lorsqu'il est passant (interrupteur fermé). C'est une commande en tension qui permet le passage de l'état bloqué (interrupteur ouvert) à l'état passant (interrupteur fermé). Il existe deux types de transistors : Transistor NMOS ID D ID G VGS S VGSth VGS Si VGS >> VGSth Transistor passant Transistor PMOS Si VGS < VGSth Transistor bloqué VGS S ID G ID D VGSth VGS Si VGS << VGSth Transistor passant Si VGS > VGSth Transistor bloqué 1/10

3 OMNIFET : FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP49N04 42 V 0.02 Ω 49 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE TO DESCRIPTION The VNP49N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM June /11

4 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit VDS Drain-source Voltage (Vin = 0) Internally Clamped V V in Input Voltage 18 V I D Drain Current Internally Limited A IR Reverse DC Output Current -50 A Vesd Electrostatic Discharge (C= 100 pf, R=1.5 KΩ) 2000 V P tot Total Dissipation at T c =25 o C 125 W T j Operating Junction Temperature Internally Limited Tc Case Operating Temperature Internally Limited Tst g Storage Temperature -55 to 150 o C o C o C THERMAL DATA R thj-case Rt hj- amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max o C/W o C/W ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit VCLAMP Drain-source Clamp ID = 200 ma Vin = V Voltage V CLTH Drain-source Clamp I D =2mA V in =0 35 V Threshold Voltage VINCL Input-Source Reverse Clamp Voltage Iin =-1mA V IDSS IISS Zero Input Voltage Drain Current (V in =0) Supply Current from Input Pin VDS =13V Vin =0 V DS =25V V in = VDS =0V Vin = 10 V µa µa µa ON ( ) Symbol Parameter Test Conditions Min. Typ. Max. Unit V IN(th) Input Threshold Voltage V DS =V in I D +I in =1mA V RDS(on) Static Drain-source On Resistance Vin =10V ID=25A V in =5V I D =25A Ω Ω DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit Forward VDS =13V ID=25A S Transconductance C oss Output Capacitance V DS =13V f=1mhz V in = pf gfs ( ) 2/11

5 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ( ) Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr t d(off) tf td(on) t r td(off) t f Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD =15V I d =25A Vgen =10V Rgen =10Ω (see figure 3) VDD =15V V gen =10V (see figure 3) Id=25A R gen = 1000 Ω (di/dt)on Turn-on Current Slope VDD =15V ID=25A 25 A/µs V in =10V R gen =10Ω Qi Total Input Charge VDD = 15V ID= 25A Vin = 10 V 100 nc ns ns ns ns µs µs µs µs SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD ( ) Forward On Voltage ISD =25A Vin =0 1.6 V trr ( ) Reverse Recovery ISD = 25 A di/dt = 100 A/µs 250 ns Time V DD =30V T j =25 o C Qrr ( ) IRRM ( ) Reverse Recovery Charge Reverse Recovery Current (see test circuit, figure 5) nc A PROTECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit Ilim Drain Current Limit Vin =10V VDS =13V V in =5V V DS =13V t dlim ( ) Step Response Current Limit V in =10V Vin =5V T jsh ( ) Overtemperature Shutdown 150 T jrs ( ) Overtemperature Reset 135 I gf ( ) Fault Sink Current V in =10V V DS =13V Vin =5V VDS =13V E as ( ) Single Pulse starting T j =25 o C V DD =20V Avalanche Energy Vin =10V Rgen =1KΩ L=6mH ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Parameters guaranteed by design/characterization A A µs µs o C o C ma ma 4 J 3/11

6 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user s standpoint is that a small DC current (I iss ) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 o C. The device is automatically restarted when the chip temperature falls below 135 o C. - STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R DS(on) ). 4/11

7 Thermal Impedance Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage Static Drain-Source On Resistance 5/11

8 Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Normalized On Resistance vs Temperature 6/11

9 Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Switching Time Resistive Load 7/11

10 Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 8/11

11 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 9/11

12 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA D1 F G C D A E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 10/11

13 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life supportdevices or systems withoutexpress written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 11/11