Characterization and Modeling of SiC Power MOSFETs THESIS

Characterization and Modeling of SiC Power MOSFETs THESIS Presented in Partial Fulfillment of the Requirements for the Degree Master of Science in the Graduate School of The Ohio State University By Xiangxiang Fang Graduate Program in Electrical and Computer Science The Ohio State University December 2012 Master's Examination Committee: Professor Wu Lu, Advisor, Professor Jin Wang

Copyright by Xiangxiang Fang 2012

Abstract SiC power MOSFETs are great candidates for high-voltage power switching applications because of their lower on-resistance and faster switching speed compared with silicon power MOSFETs. In this study, a TO-247 packaged, 1.2KV, 15A SiC MOSFET manufactured by GE has been investigated. The static characteristics of the device have firstly been performed using an Agilent power curve tracer at room temperature to get basic device performance, including DC characteristics (currentvoltage characteristics, I-V) and AC characteristics (capacitance-voltage characteristics C-V). The input, output, reverse transfer capacitance of SiC MOSFET (C ISS, C OSS, C RSS respectively) and package stray inductances are of vital importance to the SiC MOSFET as they determine the dynamic behavior of the device during switching transients. Based on the characterization results, two different modeling methods have been implemented for the SiC MOSFET. A double-pulse tester (DPT) was built to perform switching characteristics of SiC MOSFET at 100V drain bias, 10A load current level and the same DPT circuit has been implemented in Synopsys Saber to verify the device models previously built. By comparison of simulated static and dynamic characteristics to measurement data, both models we built have been verified. Good agreements were obtained between the device models and experimental results. Approaches to improve the models have been investigated and limitations of the model have been discussed. ii

Dedication This document is dedicated to my family. iii

Acknowledgments Firstly, I would like to express my sincere appreciation to my advisor, Dr. Wu Lu for his kindly guidance and continuous support through my Master study and work at The Ohio State University. Without his guidance, it s impossible for me to finish this thesis. Dr. Lu is an advisor who is always working hard and willing to talk and teach his students with patience. I really enjoyed the one-to-one meeting with him every week, discussing the basic semiconductor physics, device characterization and modeling, etc. He is intelligent and always shows the right way to solve the problem I encountered. I am very lucky to have him as my advisor. I am deeply grateful to Dr. Jin Wang for sparing a time to be my Master committee member, and greatly appreciate his help to build the double-pulse tester and provide test instruments for power device switching characterization. Without his help, the device model verification would be impossible to be done. Also thanks to Dr. Longya Xu and Dr. Siddharth Rajan for their help. Special thanks also go to Ye Shao, Mark Scott and Lixing Fu for their guidance of experimental measurements and assistance in collecting experimental data. Finally, I would like to thank my parents for their love and encouragement in the past years and their confidence in me. iv

Vita 2006 to 2010...B.S. Electronic Science and Technology, Shanghai University July 2012 to August 2012...Graduate Research Assistant, Department of Electrical and Computer Engineering, The Ohio State University Fields of Study Major Field: Electrical and Computer Engineering v

Table of Contents Abstract... ii Dedication... iii Acknowledgments... iv Vita... v List of Tables... ix List of Figures... x Chapter 1 Introduction... 1 1.1 Fundamental Properties of Semiconductor Power Devices... 1 1.2 Power MOSFETs Structures... 4 1.3 Research Motivations and Objectives... 6 1.4 Organization of Thesis... 7 Chapter 2 Static characterization... 8 2.1 Introduction... 8 2.2 Agilent power device curve tracer and text fixture... 9 2.3 Characterizations of SiC MOSFET... 10 vi

2.3.1 Drain-source leakage current I DSS... 10 2.3.2 Gate-source leakage current I GSS... 11 2.3.3 Output and Transfer Characteristics... 12 2.3.4 On-State Resistance Rds(on)... 13 2.3.5 Gate Threshold Voltage V GS(TH)... 15 2.3.6 Body Diode I-V Characteristics... 16 2.3.7 Gate Capacitance (Cg-Vg Curve)... 17 2.3.8 Nonlinear Junction capacitances C ISS, C RSS, C OSS... 18 2.3.9 Internal Gate Resistance R GI... 23 2.3.10 Package Stray Inductance measurement... 23 2.4 Conclusion... 24 Chapter 3 : Modeling of 1.2KV, 15A SiC MOSFETs... 25 3.1 Introduction... 25 3.2 Modeling of SiC MOSFET using nonlinear curve-fitting method... 26 3.2.1 Sub-circuit model structure of SiC MOSFET... 26 3.2.2 MOS... 26 3.2.3 Three Junction capacitors... 29 3.2.4 Body Diode... 29 3.2.5 Other parameters... 31 vii

3.3 Saber Power MOSFET Tool... 32 3.4 Conclusion... 39 Chapter 4 Characterization and modeling of SiC MOSFET switching behavior... 40 4.1 Fundamental of SiC Power MOSFET Switching Characteristics... 40 4.2 Double Pulse Tester (DPT) for Dynamic Switching Performance Characterization... 46 4.3 Switching characteristics modeling using Saber... 48 4.4 Conclusion and Discussion... 56 Chapter 5 Concluding Remark... 58 References... 59 viii

List of Tables Table 1.1 Comparison of Si, GaAs and SiC material properties... 2 Table 3.1 SiC MOSFET model parameters... 32 Table 3.2 DC Model parameters... 34 Table 3.3 Capacitance model parameters... 36 ix

List of Figures Figure 1.1 Comparison of specific on-resistance versus breakdown voltage for Si and 4H- SiC... 4 Figure 1.2 Vertical-diffused (VD) MOSFET structure... 6 Figure 2.1 TO-247 package... 8 Figure 2.2 Agilent B1505A Power Device Analyzer / Curve Tracer... 10 Figure 2.3 Agilent N1259A High Power Text Fixture... 10 Figure 2.4 Drain-Source leakage current vs. Drain voltage. The gate is shorted to the source... 11 Figure 2.5 Test circuit for I DSS... 11 Figure 2.6 Test circuit for I GSS... 12 Figure 2.7 Gate-source leakage current as a function of gate voltage. The drain is shorted to the source... 12 Figure 2.8 Test circuit for output characteristics... 13 Figure 2.9 Output characteristics. The gate is biased from 4 V to 20 V with a step of 4V... 13 Figure 2.10 Test circuit for transfer characteristics... 13 Figure 2.11 Transfer characteristics. The drain bias is 10V... 13 Figure 2.12 Power D-MOSFET structure... 15 x

Figure 2.13 Test Circuit for characterization of V GS(TH)... 16 Figure 2.14 Drain current as a function of gate (drain) bias. The drain is shorted to the gate... 16 Figure 2.15 Test Circuit for body diode I-V... 17 Figure 2.16 Body Diode I-V Curve (Forward)... 17 Figure 2.17 Body Diode I-V curve (reverse)... 17 Figure 2.18 Test circuit for Cg-Vg... 18 Figure 2.19 Cg-Vg curves... 18 Figure 2.20 The B1505A high-voltage Bias-T connects to the MFCMU and HVSMU modules to provide up to 3000 V of DC bias during capacitance measurements... 19 Figure 2.21 C OSS connection scheme.... 20 Figure 2.22 C OSS - V DS curve. The drain is swept from 1 to 500 V with a step of 1 V and oscillation level of 20 mv at 100 khz.... 20 Figure 2.23 C RSS connection scheme... 21 Figure 2.24 C RSS -V DS curve. The drain is swept from 1 to 500 V with a step of 1 V and oscillation level is 20 mv at 100 khz.... 21 Figure 2.25 C ISS connection scheme... 22 Figure 2.26 C ISS -V DS curve. The drain voltage is swept from 0 to 500 V with a step of 1 V and oscillation of 20 mv signal at 100 khz... 22 Figure 2.27 C-Vds curves... 22 Figure 2.28 R GI Measurement setup... 23 Figure 2.29 equivalent circuit (R GI )... 23 xi

Figure 3.1 sub-circuit model for SiC MOSFET... 26 Figure 3.2 Comparison of measured and modeled output characteristics.... 28 Figure 3.3 Comparison of measured and modeled transfer characteristics at Vds =10 V. 28 Figure 3.4 Body diode I-V measurement result (blue) and curve-fitting result (pink)... 30 Figure 3.5 Body diode I-V measurement result (blue) and simulation result from analytical model (red)... 31 Figure 3.6 Saber Power MOSFET Tool interface... 33 Figure 3.7 Simulated and measured output characteristics... 34 Figure 3.8 Simulated and measured transfer characteristic... 35 Figure 3.9 Simulated and measured C- V DS characteristics... 37 Figure 3.10 Simulated (analytical model) and measured C- V DS characteristics... 38 Figure 3.11 Simulated and measured body diode I-V forward characteristic... 39 Figure 4.1 Schematic circuit diagram of a clamped inductive load test circuit for SiC MOSFETs... 41 Figure 4.2 SiC MOSFET turn-on transient process Figure 4.3 SiC MOSFET turn-off... 45 Figure 4.4 Double pulse tester switching characterization setup.... 47 Figure 4.5 SiC MOSFET double pulse tester circuit board top layer... 47 Figure 4.6 SiC MOSFET double pulse tester circuit board bottom layer... 48 Figure 4.7 Diode Forward I-V curve... 48 Figure 4.8 Diode junction capacitance... 48 xii

Figure 4.9 Schematic circuit digram of a clamped inductive load test circuit for SiC MOSFET... 49 Figure 4.10 Experimental and simulated waveforms. Turn-on process at Rg = 2.7 Ω... 50 Figure 4.11 Experimental and simulated waveforms. Turn-off process at Rg = 2.7 Ω... 50 Figure 4.12 Experimental and simulated waveforms. Turn-on process at Rg = 5 Ω... 51 Figure 4.13 Experimental and simulated waveforms. Turn-off process at Rg = 5 Ω... 51 Figure 4.14 Experimental and simulated waveforms. Turn-on process at Rg = 10 Ω... 52 Figure 4.15 Experimental and simulated waveforms. Turn-off process at Rg = 10 Ω... 52 Figure 4.16 Measured and simulated transient response in the turn-on process with gate drive resistance of Rg = 2.7 Ω... 53 Figure 4.17 Measured and simulated transient response in the turn-off process with gate drive ressitance of Rg = 2.7 Ω... 53 Figure 4.18 Measured and simulated transient response in the turn-on process with gate drive resistance of Rg = 5 Ω... 54 Figure 4.19 Measured and simulated transient response in the turn-off process with gate drive resistance of Rg = 5 Ω... 54 Figure 4.20 Measured and simulated transient response in the turn-on process with gate drive resistance of Rg =10 Ω... 55 Figure 4.21 Measured and simulated transient response in the turn-off process with gate drive resistance of Rg = 10 Ω... 55 xiii

Chapter 1 Introduction 1.1 Fundamental Properties of Semiconductor Power Devices Silicon-based power semiconductor devices have dominated the power electronics and power systems applications for a long time because of its numerous advantages. Examples of the silicon-based power devices are diodes, thyristors, bipolar junction transistors (BJTs), insulated-gate bipolar transistors (IGBTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), etc. As the demand for faster switching speed devices with higher voltage capability growing, silicon-based power devices suffers from limitations due to some inherent material properties, such as low bandgap energy, small critical electric field, low thermal conductivity, and switching frequency limitations [1]. Efforts have been made since 1980s to develop power devices using gallium arsenide. However, interest in this technology has dwindled because much attention has been focused on the much more promising wide bandgap semiconductor materials for power devices applications [2]. Compared to silicon-based power devices, devices made of wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), have superior advantages as follows: (1) Energy bandgap: wide bandgap semiconductors have wider energy bandgaps, which result in much lower leakage currents and higher operating 1

temperatures; (2) Critical electric field: wide bandgap semiconductors have higher critical electric fields so that devices can have higher doping concentrations with thinner blocking layers, and resulting in lower specific on-resistance. (3) Electron saturation velocity: wide bandgap semiconductors have higher electron saturation velocity, which leads to higher operating frequencies compared to equivalent silicon-based devices; (4) thermal conductivity: SiC has higher thermal conductivity which improves heat spreading and allows operation at higher power densities [3]. In Table 1.1, the key materials properties are listed for the main wide bandgap semiconductors SiC compared with Si and GaAs[4]. Property Si GaAs 6H-SiC 4H-SiC Bandgap Eg(300 K) 1.12 1.43 3.0 3.2 Critical electric field Ec(V/cm) 2.5 10 5 10 5 2.5 10 2.2 10 Thermal conductivity λ (W/cmK at 1.5 0.5 3-4 3-4 300k) Saturated electron drift velocity, vsat 1 10 7 1 10 7 2 10 7 2 10 7 (cm/s) Electron Mobility, n (cm2 / s 1350 8500 500 950 Hole Mobility, p (cm2 / s 480 400 80 120 Dielectric constant r 11.9 13.0 10 10 Table 1.1 Comparison of Si, GaAs and SiC material properties 2

Silicon carbide exists more than 150 polytypes, and 4H-SiC is the most popular candidate for power devices since its properties are superior to those of other polytypes of silicon carbide (e.g. 3C-SiC, 6H-SiC ). As can be obviously seen from Table 1-1, 4H-SiC has larger bandgap energy of 3.2eV compared to the 1.12eV bandgap of silicon and 1.43eV bandgap of GaAs [5]. Besides, 4H-SiC s saturated electron drift velocity of 2 10 7 cm/s is about an order of magnitude larger than silicon s. 4H-SiC s high thermal conductivity of 3-4 W/cmK enhances heat dissipation and allows the devices efficiently operating at higher temperature up to 350 C. Moreover, 4H-SiC has a higher critical electric field of 2.2 10 V/cm, which is about 9 times larger than that of silicon. Specific on-resistance (R on ) is a critical parameter to the power devices since it determines directly how much resistive loss a device will generate in forward conduction mode [1,5]. R on can be calculated from Eq.1, R on = 4 2 n C (1) Where V B is the breakdown voltage and Ec is the critical electrical field, the unit of the on-resistance is mωcm 2. Based on the equation above, Ron is reversely proportional to Ec, which means a higher Ec leads to a much lower Ron for 4H-SiC. Fig. 1.1 shows the theoretical specific on-resistance of blocking regions designed for certain breakdown voltages in Si and 4H- SiC, under optimum punch-through conditions [6]. As can be seen from the Figure.1.1, the specific on-resistance of 4H-SiC is about 400 times smaller than that of Si at a given breakdown voltage. It makes the devices able to operate at higher current level with relatively lower forward voltage drop. Based on various advantages listed above, SiC turns out to be better than silicon and gallium arsenide as the material of 3

choice for power devices. Figure 1.1 Comparison of specific on-resistance versus breakdown voltage for Si and 4H- SiC 1.2 Power MOSFETs Structures Power MOSFETs are the most commonly used power devices due to their superior performance over BJT, IGBT, thyristor, etc [7]. They need lower gate drive power, and they have faster switching time, no secondary breakdown, and stable gain and response time over a wide temperature range. Several power MOSFETs structures have been explored since the 1970s. Most power MOSFETs have a vertical structure with source and drain on opposite sides of the wafer in order to support higher current and voltage. The first high-voltage power MOSFET structure (V-MOSFET) was developed by using a V-groove etching process4 during the 1970s. Then during the late 1980s, the technology for etching trenches in silicon became available and this process was adopted by the 4

power semiconductor industry to develop the trench-gate or U-MOSFET structure. Another widely used power MOSFETs structure is vertical DMOSFET, which uses a double-diffusion process. Figure 1.2 shows the cross section of the basic structure for the vertical DMOSFET. Firstly, an N- type epitaxial layer grown on a heavily doped N+ substrate. The device channel is formed by the difference in lateral extension of the P- base region and N+ source region. The p-base region should be diffused deeper than the n+ source. The n- drift region must be moderately doped so that the drain breakdown voltage is sufficiently large and the thickness of the n-drift region is made as thin as possible to minimize drain resistance. Without adding a gate bias, a high voltage can be supported in the vertical DMOSFET structure when a positive bias is applied to the drain. In this situation, junction J1 formed between the P-base region and the N-drift region becomes reversely biased. The voltage is supported mainly within the thick lightly doped N- drift region. By adding a positive gate bias, drain current flow is introduced in the vertical DMOSFET structure. A relatively narrow JFET region is generated between the adjacent P-Base regions. Due to the constriction of the current flow through the JFET region, the internal resistance would increase in the vertical DMOSFET structure. As a result, the gate width should be carefully chosen to minimize the internal resistance for this structure. Several commercialized SiC DMOSFETs manufactured by Cree and GE can be found in [5, 8] 5

Figure 1.2 Vertical-diffused (VD) MOSFET structure 1.3 Research Motivations and Objectives A lot of efforts have been made to improve the performance of SiC power devices recently. The basic characteristics of SiC MOSFETs and their potential utilization in power electronics and power converter systems have been deeply investigated. Several different kinds of physical-based models and analytic device models have also been proposed for SiC MOSFETs. The objective of this thesis research is to study the fast-switching-speed behavior of SiC MOSFETs. The background of this work is to support the development a SiC-based Multi-Mode Integrated Converter Controller (MMICC). The long term goal is to build the SiC-based Integrated Converter Controller by replacing the existing Si power modules with SiC devices or modules for the main inverter. A breadboard Integrated Converter Controller based on SiC devices or modules will be built and tested, and the results will be compared with those from real time or hardware-in-loop simulations. The 6

goal of this MS thesis project is to develop simplified but accurate device models for SiC MOSFETs that can be used for real time simulations and MMICC design. To achieve this goal, SiC MOSFETs manufactured by GE with 1.2 kv voltage and 15 A current rating are characterized. The basic characterization method and processes will be explained and discussed in detail. Based on the characterization results, SiC MOSFET models have been established and implemented in a circuit simulator to compare the simulation results with measurement results. Issues regarding the model accuracy and approaches to improve the model will also be discussed. 1.4 Organization of Thesis The following of this thesis described the details of the above mentioned research goals. The instruments used to do the measurements and approaches employed to do the characterization of SiC MOSFETs will be discussed in Chapter 2. In Chapter 3, an analytic model will be developed and the experimental results will be used to extract the model parameters. Two different device modeling procedures will be presented and relative modeling issues will be discussed to improve models accuracy. Chapter 4 shows the switching characterization process for the SiC MOSFET. The same switching characterization test circuit will be built in Saber to simulate the switching behavior. Simulation and experimental results will be compared at last. Chapter 5 summarizes the research work and some future work to improve the model is also suggested. 7

Chapter 2 Static characterization 2.1 Introduction This chapter describes the basic static characterization procedures for the SiC MOSFET. The SiC MOSFET investigated here is a 1.2 KV, 15 A SiC MOSFET manufactured by General Electric Company (GE) with a T0-247 package (Figure 2.1). The three leads G, D, S shown in Figure 2.1 are gate, drain and source respectively. There is no manufacturer datasheet for this device because it has not been commercialized yet. Therefore, in order to evaluate its potential performance in Integrated Converter Controller (ICC) and compare it with the existing Si device/module, characterization of this SiC MOSFET is the first step of this thesis research. Figure 2.1 TO-247 package 8

The static characterizations of SiC MOSFET mainly include DC characterization and AC characterization. When we talk about DC characterization of MOSFETs, it basically contains output and transfer characterization, gate and drain leakage current characterization, on-state resistance and threshold voltage measurement and body diode I-V characterization. For AC characterization, it represents input, output and reverse transfer capacitance characterization, the internal gate resistance characterization and inductance measurement introduced by the T0-247 package. In this work, both DC and AC characterization was performed by using a very powerful equipment Agilent B1505A power device analyzer/curve tracer at room temperature [9]. Detail information about the curve tracer will be introduced in the following section. 2.2 Agilent power device curve tracer and text fixture Agilent B1050A Power Device Analyzer/ Curve Tracer (Figure 2.2) is designed for measuring power devices. Its high voltage source measurement unit (HVSMU) supports high voltage measurement up to 3000 V with a current limit of 4mA and its high current source measurement unit (HCSMU) supports high current measurement up to 20 A with a voltage limit of 20 V [10]. Agilent B1505A has both DC and AC parametric measurement capabilities that provide the DC voltage and current output capability, DC voltage and current measurement capability, and AC signal output and impedance measurement capability. For example, it can be used to perform a single or multi-channel current-voltage (I-V) sweep measurement, capacitance-voltage sweep measurement and I/V-T sampling measurement, etc. The Agilent N1259A high power test fixture which is 9

used to perform the packaged power device is shown in Figure 2.3. Similar to Agilent B1505A, N1259A is capable of handling 3000 V maximum voltage and 20 A maximum current [10]. To do the measurement, the packaged device should be inserted into the socket on the N1259A text figure. Test leads should be used to make appropriate connection among the three terminals of the device and those source measurement units, and corresponding coaxial or triaxial cables are used to connect the text fixture with curve tracer. The text fixture s cover needs to be closed and measurement conditions are set in curve tracer. Figure 2.2 Agilent B1505A Power Device Analyzer / Curve Tracer Figure 2.3 Agilent N1259A High Power Text Fixture 2.3 Characterizations of SiC MOSFET 2.3.1 Drain-source leakage current I DSS I DSS is the drain-source leakage current at a specified drain-source voltage when the gate-source voltage is zero (V GS =0 V). It is used to evaluate the blocking capability of the device. The High Voltage SMU of the curve tracer is chosen to measure I DSS and the test 10

circuit is displayed in Figure 2.4. Figure 2.5 shows the drain-source leakage current versus drain-source voltage. As shown in the figure, the drain-source leakage current for this SiC is about 200 A at 1100 V drain-source voltage, which indicates a very high drain avalanche breakdown voltage of the device. When the drain voltage is above 1100 V, it can be clearly seen that the current increase dramatically due to the avalanche effect caused by impact ionization. Figure 2.5 Test circuit for I DSS Figure 2.4 Drain-Source leakage current vs. Drain voltage. The gate is shorted to the source 2.3.2 Gate-source leakage current I GSS I GSS is the leakage current that flows through the gate terminal at a specified gatesource voltage while drain-source voltage is zero (V DS = 0 V). The I GSS is obtained to be about 1.822 na at V GS = 25 V and V DS = 0 V. 11

Figure 2.6 Test circuit for I GSS Figure 2.7 Gate-source leakage current as a function of gate voltage. The drain is shorted to the source 2.3.3 Output and Transfer Characteristics The output characteristics are drain current Id versus drain-source voltage V DS measured under different gate voltage V GS from 4 V to 20 V in 4 V step. The transfer characteristics are obtained at V DS = 10 V while V GS is swept. Figure 2.8 and 2.9 show the test circuits for output and transfer characteristics respectively and Figure 2.10 and Figure 2.11 are the output and transfer characteristic for the SiC MOSFET at room temperature. 12

Figure 2.8 Test circuit for output characteristics Figure 2.9 Output characteristics. The gate is biased from 4 V to 20 V with a step of 4V Figure 2.10 Test circuit for transfer characteristics Figure 2.11 Transfer characteristics. The drain bias is 10V 2.3.4 On-State Resistance R DS (on) The on-state resistance R DS(ON) is a critical parameter to the device since it determines the conduction power dissipation. Figure 2.12 shows the power D-MOSFET structure with its eight internal resistance components between the drain and source 13

electrodes when the device at turned-on state. The total on-state resistance is the sum of + the eight resistances, which can be expressed as R DS (on) = R CS + R N + R CH + R A + R JFET + R D + R SUB + R CD. Where R CS is source contact resistance, R N+ is the source resistance, R CH is channel resistance, R A is accumulation resistance, R JFET is JFET resistance, R D is drift region resistance, R SUB is the substrate resistance and R CD is the drain contact resistance. Detailed introduction about each resistance component can be found in [11].There are several different definitions for the R DS(ON), and some papers define it to be the maximum slope of the output curve at a given turn-on gate voltage[12-13]. This definition gives the minimum possible R DS(ON) for a given V GS, which resulting in R DS(ON) = 0.129 Ω at V GS = 20 V in our case. While in most commercialized SiC MOSFET datasheets, R DS(ON) is defined at a specific drain current [14]. In this work, R DS(ON) can be read directly from the output characteristic curves. R DS(ON) is defined to be the value extracted at a specific turn-on gate voltage V GS and drain current I DS. Here, R DS(ON) is obtained to be about 0.141 Ω at GS = 20 V and I DS =15 A. 14

Figure 2.12 Power D-MOSFET structure 2.3.5 Gate Threshold Voltage V GS(TH) Gate threshold voltage, V GS(TH), is defined as the minimum gate bias required to form a conducting channel between the source and drain regions or to turn on the device. If V GS(TH) is defined as the gate-source voltage which produces 10 A drain current when the drain and gate terminals are shorted (V GS = V GD ) [15], we can obtain V GS(TH) = 1.57 V. If we use bigger drain current such as 10 ma, a higher threshold V GS(TH) = 3.30 V is obtained. Figure 2.13 and 2.14 show the test circuits for output and transfer characteristics, respectively. 15

Figure 2.13 Test Circuit for characterization of V GS(TH) Figure 2.14 Drain current as a function of gate (drain) bias. The drain is shorted to the gate 2.3.6 Body Diode I-V Characteristics Different from a conventional lateral structure MOSFET, SiC MOSFET has intrinsic body diode due to its vertical device structure. The measurement of body diode is the same to a two-terminal ordinary diode measurement, except that the gate and source of the SiC MOSFET should be shorted (V GS = 0 V). The test circuit for the body diode characterization is shown in Figure 2.15.The forward biased body diode I-V curve and the reverse biased body diode I-V curve are shown in Figure 2.16 and Figure 2.17. 16

Figure 2.15 Test Circuit for body diode I-V Figure 2.16 Body Diode I-V Curve (Forward) Figure 2.17 Body Diode I-V curve (reverse) 2.3.7 Gate Capacitance (Cg-Vg Curve) Figure 2.18 shows the measurement setup to obtain the Cg-Vg curves at five different frequencies (Figure 2.19). Cg-Vg Curves differ from each other in the following three regions: accumulation region, depletion region and strong inversion region [16]. As can be seen, compared to relatively lower frequency levels (e.g. 100 MHz, 1 KHz, 10 KHz, 100 KHz), the capacitance is much smaller in accumulation and strong inversion region when the frequency is 1 MHz. This is due to the inability of the holes in accumulation regions and electrons in inversion region to response to higher frequency signals [17]. 17

Figure 2.18 Test circuit for Cg-Vg Figure 2.19 Cg-Vg curves 2.3.8 Nonlinear Junction capacitances C ISS, C RSS, C OSS Usually, by using a LCR Meter or impedance analyzer only is not a feasible way to do the input, output and reverse transfer capacitance measurement since the general LCR Meters or impedance analyzers don t have a high DC voltage source (e.g. maximum 40 V for Agilent 4248A LCR Meter). A usual way to solve this problem is to build a complex test circuit with a DC power supply to support higher drain bias as well as a LCR Meter to measure capacitances [18-19]. In our case, a better way to do the measurement is to use the Agilent B1505A Power Device Analyzer/Curve Tracer mentioned above since it supports a high-voltage source/monitor unit (HVSMU), a multi-frequency capacitance measurement unit (MFCMU), and a high-voltage bias-t that makes it very easy to directly measure the three nonlinear capacitances up to 3000 V [20]. Figure 2.20 shows the connection between the high-voltage Bias-T, MFCMU and HVSMU to provide dc bias up to 3000V during the capacitance measurements. 18

Figure 2.20 The B1505A high-voltage Bias-T connects to the MFCMU and HVSMU modules to provide up to 3000 V of DC bias during capacitance measurements (1) SiC MOSFET output capacitance: C OSS (= C DS + C GD ) For the capacitance measurement, we use the multiple frequency capacitance measurement unit (MFCMU), which has four ports (Hp,Hc,Lp,Lc). Hp and Hc are shorted together (labeled as CMH and Lp and Lc are shorted together (CML).To measure C OSS, we simply need to short the gate and source terminals using a wire as shown in Figure 2.21. At the same time, HVSMU, high-voltage bias-t and MFCMU should be connected properly for biasing. In this work, C OSS (Figure 2.22) is measured under F = 100 KHz, V DS from 0 V to 500 V with 1 V step. The oscillation level is = 20 mv. 19

Figure 2.21 C OSS connection scheme. Figure 2.22 C OSS - V DS curve. The drain is swept from 1 to 500 V with a step of 1 V and oscillation level of 20 mv at 100 khz. (2) SiC MOSFET reverse capacitance C RSS (= C GD ) C RSS is equivalent to C GD, so to make this measurement we need to remove any interference from C DS and C GS by using the AC guard. The AC guard is used to provide an alternative current path so that the current flowing through C DS does not flow back through C GS into the CML node. So what we measured between the CMH node and CML node is only C GD. In this work, C RSS is measured under F = 100 KHz, V DS from 0 V to 500 V with 1 V step. The oscillation level is = 20 mv. Figure 2-23 shows the connection scheme of C RSS and Figure 2.24 shows the C RSS -V DS curve. 20

Figure 2.23 C RSS connection scheme Figure 2.24 C RSS -V DS curve. The drain is swept from 1 to 500 V with a step of 1 V and oscillation level is 20 mv at 100 khz. (3) SiC MOSFET input capacitance C ISS (=C GD +C GS ) For the input capacitance measurement, we need to use an external blocking resistor (100 kω) and capacitor (1 F). The capacitor has to be much larger than C GD or C DS (junction capacitances are usually in the range of tens of pf to several nf), and it acts as a DC blocking capacitor. Conversely, we need to connect the HVSMU to the drain through a relatively large resistor to prevent the HVSMU from interfering with the AC signal coming from the MFCMU. The measured capacitance should be C GS in parallel with the series combination of C GD and (1 F + Cds 1 F capacitor is in parallel with C DS ). Finally, we can get the measured capacitance C m C GD + C GS = C ISS. In this work, C ISS is measured under F = 100 KHz, V DS from 0 V to 500 V with 1 V step. The oscillation level is = 20 mv. Figure 2.25, 2.26 shows the connection scheme of C ISS, C ISS -V DS curve respectively and Figure 2.27 shows the three junction capacitance as a function of V DS. 21

Figure 2.25 C ISS connection scheme Figure 2.26 C ISS -V DS curve. The drain voltage is swept from 0 to 500 V with a step of 1 V and oscillation of 20 mv signal at 100 khz Figure 2.27 C-Vds curves 22

2.3.9 Internal Gate Resistance R GI Besides the three nonlinear capacitances, the internal gate resistance is also a vital parameter since it affects the switching speed of the device. The measurement of R GI is carried out with a LCR Meter measuring the gate and source terminals while the drain and source terminals are shorted (Figure 2.28,2.29) [21]. The R GI is measured to be 0.55Ω at 100 KHz. Figure 2.28 R GI Measurement setup Figure 2.29 equivalent circuit (R GI ) 2.3.10 Package Stray Inductance measurement The device is packaged in a TO-247 package. The stray impedances introduced by the package can be expressed as three inductances L G, L D and L S, which are in series with the gate, drain and source terminals respectively [22]. Inductances are measured between the root of the leads and center of die contact. In this case, inductances are measured to be L G = 9.23 nh, L D = 5.93 nh and L S = 7.52 nh. 23

2.4 Conclusion This chapter has presented the static characterization of the 1.2 kv, 15 A SiC MOSFET, including output and transfer characterization, gate and drain leakage current characterization, on-state resistance and threshold voltage characterization, body diode I- V characterization and three junction capacitance, the internal gate resistance and package stray inductance characterization. The static characterization results show the SiC MOSF s superiority in blocking higher voltage while still keeping a very low onresistance value. 24

Chapter 3 : Modeling of 1.2KV, 15A SiC MOSFETs 3.1 Introduction In order to make the device model adoptable and suitable in the system-level simulation for the later Multi Mode Integrated Converter Controller design, a concise model is preferred in our case to make the system-level simulation run as fast as possible. So far, a lot of efforts have been made on the SiC MOSFET modeling, many of which is focused on developing physics-based models for the SiC MOSFET [23-25]. To develop physics-based device models, it s necessary to be familiar with the whole device fabrication process and all parameter information like the device channel length and width, the thickness of the gate oxide layer, N- drift region and substrate, doping concentration of the JFET region,p-wells and N-drift region, etc. However, most of these parameters which are needed to develop models are not avaiable to us. In this case, we decided to develop sub-circuit models for SiC MOSFETs. The advantage to build sub-circuit models is that by doing characterization of devices, model parameters can be directly extracted from characterization results without knowing detailed structure information of devices [26]. 25

3.2 Modeling of SiC MOSFET using nonlinear curve-fitting method 3.2.1 Sub-circuit model structure of SiC MOSFET Figure 3.1 shows the sub-circuit model structure of SiC MOSFET. It includes a MOS, three junction capacitors, a reverse body diode, an internal gate resistor and three package stray inductors. Figure 3.1 sub-circuit model for SiC MOSFET The following described the details of main components in the above SiC MOSFET subcircuit model. 3.2.2 MOS The MOS part is modeled as a voltage controlled current source which can be used to describe the static I-V output and transfer characteristics of the device. We developed an analytic model to describe the output characteristics [27]. 26

=0, S- H 0 (Cut-off regime) (2) = 2 S[2( S - H )- S ](1 λ S ), 0 S S- H (Linear regime) (3) = 2 ( S - H ) 2 (1 λ S ), 0 S- H S (Saturation regime) (4) where = n C O W L, is the charge-carrier effective mobility, C O is the capacitance of the oxide layer, L is channel length and W is the channel width. Since the device dimensions (gate oxide thickness and channel width/length ratio) are not available, the parameter is used here to represent the product of these four parameters. V TH is the threshold voltage and λ is the channel-length modulation parameter. A non-linear curvefitting method is carried out in OriginLab to extract these parameters. The results are shown in Figure 3.2 and 3.3. A good agreement is achieved between the measurement and simulation results. The blue lines are the measurement results and the dashed lines are the curve-fitting results. The threshold voltage V TH is 5.86 V, is 0.5006 AV -2 and λ is 0.04 47 obtained through extraction. 27

Figure 3.2 Comparison of measured and modeled output characteristics. Figure 3.3 Comparison of measured and modeled transfer characteristics at Vds =10 V. 28

3.2.3 Three Junction capacitors Here the three junction capacitors C ISS, C OSS, C RSS are just modeled simply as constant values and the parameter values are extracted from the capacitance measurement results at a drain voltage is + 500V at 100 khz. At this condition, as shown in Fig.2.27, C ISS is 1.30 nf, C OSS is 155 pf and C RSS is 22.6 pf. A more accurate and complicated capacitance model that varies with drain voltage will be proposed later. 3.2.4 Body Diode The diode can be modeled as a power diode connected in anti-parallel with the MOSF. he model is built using the iode ool in Saber and the device characteristics (I SD -V SD ) can be tuned visually to fit the measurement result [28-29]. In the diode ool, the model can be characterized at three different temperatures and each temperature has its own parameter set. Since we are characterize the device at room temperature, so the temperature parameter tnom is set to be 27 C. The parameters need to be extracted from diode I-V characteristics include: (1) r s : series resistance; (2) i sl : saturation current for low-level injection; (3) v tl : threshold voltage for low-level injection (4) i sh : saturation current for high-level injection (5) v th : threshold voltage for high-level injection. After extracted reasonable values for all these five parameters, the optimizer in diode tool can be used for fine tuning of parameters. The comparison of simulated and measured result is shown in figure 3.4. 29

Figure 3.4 Body diode I-V measurement result (blue) and curve-fitting result (pink) Besides, an analytical model has also been built for the body diode. The body diode current/voltage characteristic is given by Eq. 5-7 S = SL {e p ( L S ) 1}, 0 S 0. (5 S = SH {e p ( H S ) 1}, 0. S.55 ( S = 1 R S S 5., S.55 (7 Where SL is saturation current for low level injection, L is the emission coefficient for low level injection, SH is saturation current for high level injection, H is the emission coefficient for high level injection, is the series resistance. The comparison of simulated result from the analytical model and measured result is shown in figure 3.5. 30

The extracted parameters values are as follows: SL =.7-1 A, L=1. 17, SH =0.00 A, H=17., R S =0.0557 Ω Figure 3.5 Body diode I-V measurement result (blue) and simulation result from analytical model (red) 3.2.5 Other parameters The internal gate resistance R GI and package stray inductance L G, L D, L S are modeled using the characterization results. All the parameters for the SiC MOSFET model are listed in Table 3.1. 31

Parameter Value Unit MOS 0.5006 AV -2 V TH 5.86 V λ 0.04647 V -1 Junction Capacitors C GD at V DS =500 V 13.2002p pf C GS at V DS =500 V 1.27256 nf C DS at V DS =500 V 63.3855 pf Power Diode r s 0.04457 Ω i sl A v tl 0.207 V i sh A v th 1.669 V Internal Gate Resistor R GI 0.55 Ω Package Stray Inductors L G 9.23 nh L D 5.93 nh L S 7.52 nh Table 3.1 SiC MOSFET model parameters 3.3 Saber Power MOSFET Tool A more convenient way to develop an accurate SiC MOSFET model is to use the Power MOSFET Tool in Saber. The Power MOSFET Tool provides support to generate level-1 MOSFET models intended for use in power electronic circuits. These models are well suited for examining switching transients and losses in power supplies. An optimizer is also provided to help matching the model DC characteristics with experimental data. The interface of the Power MOSFET Tool is displayed in Figure 3.6. 32

Figure 3.6 Saber Power MOSFET Tool interface The information needed for the Power MOSFET Tool includes DC characteristics (output and transfer characteristics), capacitance characteristics (input, output and reverse transfer capacitance characteristics), body diode characteristics, internal gate resistance and package stray inductances, all of which could be obtained from measurement results described in chapter 2. First, in DC characterization form, a set of parameters are given in Table 3.2 for a specified device temperature. 33

Parameter Value Description Tempj ( C) 27 Temperature at which the subsequent parameters are specified Vt (V) 5.88 threshold voltage vgs0(v),vds0(v),ids0(a) 12, 6,11.45 Coordinates of a point on the id(vds0,vgs0) surface located at the boundary between quasi-linear and saturation regions. rds0(ω) 0.25 Device resistance when drain bias is close to zero and gate bias is equal to vgs0 rs(ω) 0.0038 Series resistance at the source terminal rd(ω) 0.028 Series resistance at the drain terminal rg(ω) 0.55 Series resistance at the gate terminal Lambda (V -1 ) 0.062 Channel-length modulation parameter Table 3.2 DC Model parameters Figure 3.7 and 3.8 show the simulated and measured result of output and transfer characteristics. Figure 3.7 Simulated and measured output characteristics 34

Figure 3.8 Simulated and measured transfer characteristic The capacitance characteristics form shows the standard measured capacitance curves provided by most data sheets that three nonlinear capacitances are measured as a function of drain bias: C RSS (= C GD ), C OSS (= C GD + C DS ) and C ISS (= C GD + C GS ). In the models produced by the tool, C GD and C DS are non-linear whereas C GS is assumed to be constant, which is commonly verified by measured data. Table 3-3 shows the list of capacitance model parameters extracted from C-V characteristics of the SiC MOSFET. 35

Parameter Value Description crss0(nf) 1.66 maximum crss value crss1(nf) 0.425 crss value for reference voltage v1 crss2(nf) 0.083 crss value for reference voltage v2 coss0(nf) 2.709 maximum coss value coss1(nf) 1.159 coss value for reference voltage v1 coss2(nf) 0.493 coss value for reference voltage v2 ciss0(nf) 2.963 maximum ciss value v1(v) 1.38 first reference voltage v2(v) 6.7 second reference voltage (v2>v1) profile 0.46 doping profile parameter (typical values range between 0.3 and 0.6). Table 3.3 Capacitance model parameters The maximum C RSS value and C OSS value are obtained when the drain bias is negative value. During the capacitance characterization, V GS is set to be 0 V to block the device channel for V DS dependency, V DS is swept from 0 V to 500 V. The relationship between the capacitance characteristics can be obtained. C GS is hardly changed with the variation of V DS since V DS does not govern the expansion of the depletion region across the gate and source. In other word, C GS is a gate bias dependent parameter. C GD and C DS decrease with the increase of V DS in accordance with the expansion of the depletion region [30]. The measured and simulated C- V DS characteristics of the SiC MOSFET are shown in Figure 3.9. 36

Figure 3.9 Simulated and measured C- V DS characteristics Besides, the C-V DS characteristics of the SiC MOSFETs are modeled by using Eqs. 8-10. It can be expressed in the following compact form: ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Where ( ) is the gate-source zero-bias gate capacitance, ( ) is the gate-drain zero-bias capacitance, ( ) is the drain-source zero-bias capacitance, is the gatedrain oxide capacitance, is the drain depletion layer beneath the gate oxide capacitance, is the drain threshold voltage, is the built-in potential and M is the grading coefficient. The comparison of simulated result from the analytical model and measured result is shown in figure 3.10. The extracted parameters values are as follows: 37

( ), ( ), ( ),,,, M=0.47. Figure 3.10 Simulated (analytical model) and measured C- V DS characteristics The body diode is characterized with the Diode Characterization Tool which we have discussed above. Figure 3.11 shows the simulated and measured body diode I-V forward characteristics. 38

Figure 3.11 Simulated and measured body diode I-V forward characteristic 3.4 Conclusion This chapter has presented two ways to build SiC MOSFET models that are suitable for system-level simulations using the simulator Saber. In section 3.2, an analytical model for SiC MOSFET has been developed and non-linear curve fitting has been performed to extract the parameter values. Then the sub-circuit model is developed with those extracted parameters. The sub-circuit model can be run in many commercial simulators such as Pspice, Topspice, Psim, etc. besides Saber. On the other hand, the built-in Power MOSFET Tool in saber provides a much convenient way to build the SiC MOSFET which is good enough for switching transients analysis. A good agreement has been successfully achieved between simulation and measurement results. At last, the limitations of the model also have been discussed. 39

Chapter 4 Characterization and modeling of SiC MOSFET switching behavior 4.1 Fundamental of SiC Power MOSFET Switching Characteristics SiC power MOSFETs are usually used as switches in high-power circuits due to their high breakdown voltage and fast switching capability [31-32]. Their switching behavior is mainly affected by the three capacitances between the three device terminals, namely gate-drain capacitance, gate-source capacitance, drain-source capacitance, due to the charge and discharge phenomenon during the device turn-on and turn-off process. To have a better understanding of the power MOSFET switching behavior, a basic inductive load switching behavior test circuit is shown in Figure 4.1, followed by a brief introduction of the power MOSFET turn-on and turn-off transient (Figure 4.2 and 4.3) [33-35]. 40

Figure 4.1 Schematic circuit diagram of a clamped inductive load test circuit for SiC MOSFETs Turn-on transient: The turn-on transient process is illustrated in Figure 4.2. The initial condition for the turn off process is: ( ) ( ) ( ) (1) 0-t 1 time period When the gate bias V GS increases, it begins to charge the capacitors of the SiC MOSFET. Before the gate voltage exceeds (V GS < V TH ) the threshold voltage, no drain current flows through the SiC MOSFET device, which means I D will remain zero and the device drain voltage V D also keeps its initially value, which is equal to the drain bias voltage V DS. Since the gate drain capacitance C GD varies with the applied drain voltage in 41

accordance with the thickness of depleted region, it remains constant at this situation due to the constant V DS. The gate voltage reaches the threshold voltage at time t 1 given by: ( ) ( ) ( ) ( ) (2) t 1 -t 2 time period: When the gate bias is higher than the threshold voltage, drain current starts to flow through the SiC MOSFET device and the current value increases. At this period, the drain voltage still remains constant since the freewheeling diode cannot be used to provide any voltage until all the load current is transferred to the SiC MOSFET device. As a result, the gate drain capacitance C GD still remains constant. The drain current keeps increasing until it reaches the same value as the load current I L. At this moment, the time t 2 can be expressed as: where is the inversion layer mobility, is the gate oxide capacitance, is channel width and is channel length.the gate voltage at time t 2 called as plateau voltage and can be expressed as: ( ) ( ) 42

( ) (3) t 2 -t 3 period: At time t 2, the entire load current I L has transferred from the diode to the SiC MOSFET and the diode begin to support voltage, which means the drain voltage V D will begin to reduce until it reaches the on state voltage Von: ( ) ( ) ( ) (4) t 3 -t 4 time period: During this time period, the gate voltage keeps increasing until it reaches the gate bias voltage. As the gate bias increases, at the same drain current level, the on-state resistance will be reduced which results in a small reduction of the drain voltage during this period: ( ) ( ) ( ) Turn off transient: The turn-off transient process is illustrated in Figure 4.3. The initial condition for the turn off process is: ( ) ( ) 43

( ) (1) 0-t 4 time period: As the gate bias decreases, neither drain voltage nor drain current will change until the gate voltage reaches the plateau voltage V GP, which is the voltage allows the SiC MOSFET to operates at its saturation current level equal to the load current level. The time t 4 is given by: [ ] ( ) ( ) ( ) (2) t 4 -t 5 time period: During t 4 -t 5 time period, the drain voltage begins to increase while the drain current is still remains constant because the current is not able to be transferred to the freewheeling diode until the drain voltage V D exceeds the drain bias and makes the diode working at the forward bias condition. In this case t 5 can be expressed as ( ) ( ) ( ) (3) t 5 -t 6 44

At this time period, the load current begins to transfer from the SiC MOSFET to the freewheeling diode, resulting in a current drop for the device. The current flowing through the gate resistance discharges both the gate-to-drain and gate-to-source capacitance, leading to an quickly fall in gate voltage. (4) beyond t 6 At time t 6, the gate voltage drops to the threshold and beyond that point, the drain current turns to zero and the drain voltage equals to the drain bias voltage. ( ) ( ) ( ) ( ) Figure 4.2 SiC MOSFET turn-on transient process Figure 4.3 SiC MOSFET turn-off transient process 45

4.2 Double Pulse Tester (DPT) for Dynamic Switching Performance Characterization To evaluate the dynamic characteristics of a SiC MOSFET, a double pulse tester (DPT) is built to obtain the switching waveforms and data. In this work, an inductor is used for double pulse tests since the system load is inductive for a majority part of power electronics and power systems applications. The basic operation principle of the DPT is similar to that of the inductive load test circuit we introduced in section 4.1. Figures 4.4 to 4.6 show the schematic and board layout of the double pulse tester. For dynamic tests, two pulses are applied to the gate of the SiC MOSFET with very low frequency, which is usually below 10 Hz to help the device under test (DUT) avoid deviation caused by self-heating. During the first pulse period, appropriate DC bias and pulse width is chosen to charge the inductor to a certain load current. Then turn-off of the first pulse can help to obtain the turn-off characteristics of the SiC MOSFET under the desired current and voltage level. The turn-off time, propagation delay of DUT can be derived from the measured Vgs, Vds and Id. Besides, data exported from oscilloscope are used to accurately calculate the turn-off loss according to its definition. After the first pulse, the current is blocked by the MOSFET so that it circulates through a parallel SiC diode. Thus, the power loss is induced by the forward voltage of the diode. Since the interval between the first and second pulse is short enough, the current during this period can be considered to be constant. The second pulse is utilized for the turn on characterization of the SiC MOSFET. Since the current value is determined by the first charging pulse, the SiC MOSFET is 46

turned on under the same current and voltage bias level as the first pulse. Similarly to the turn-off procedure, the turn-on time, turn on delay, turn on switching loss can be evaluated. Since the main purpose to add a second pulse is to measure the turn on characteristics, the pulse width is always set to be very short. Moreover, since the gate resistance affects the charging speed of the input capacitance, three different gate resistances are added to observe the change of the switching transients. In our work, the switching characterization is performed under 100 V drain bias, 10 A inductive load, -5V/20V gate voltage with three different gate resistance value R G = 2.7 Ω, R G = 5 Ω and R G = 10 Ω. Figure 4.4 Double pulse tester switching characterization setup. Figure 4.5 SiC MOSFET double pulse tester circuit board top layer 47

Figure 4.6 SiC MOSFET double pulse tester circuit board bottom layer 4.3 Switching characteristics modeling using Saber To verify the two SiC MOSFET models we have built, the same double pulse tester circuit is simulated in Saber [36]. In the simulation, the gate drive circuit is replaced by an ideal voltage source to generate the two pulses. A CREE SiC Schottky diode, which is characterized and simulated using the saber diode ool, works as the freewheeling diode at this work. A comparison of experimental and the simulated result of SiC Schottky diode I-V and C-V characteristics are shown in Figure 4.7 and 4.8. Figure 4.7 Diode Forward I-V curve Figure 4.8 Diode junction capacitance 48

An inductive load test circuit for the switching characterization built in Saber is shown in Figure 4.9. Comparisons of experimental switching waveforms and the simulated waveforms based on the device model built in section 3.2 are displayed in Figure 4.10-4.15. Figure 4.9 Schematic circuit digram of a clamped inductive load test circuit for SiC MOSFET 49

Figure 4.10 Experimental and simulated waveforms. Turn-on process at Rg = 2.7 Ω Figure 4.11 Experimental and simulated waveforms. Turn-off process at Rg = 2.7 Ω 50

Figure 4.12 Experimental and simulated waveforms. Turn-on process at Rg = 5 Ω Figure 4.13 Experimental and simulated waveforms. Turn-off process at Rg = 5 Ω 51

Figure 4.14 Experimental and simulated waveforms. Turn-on process at Rg = 10 Ω Figure 4.15 Experimental and simulated waveforms. Turn-off process at Rg = 10 Ω The measured and simulated switching characteristics based on the device model built in section 3.3 are shown in figure 4.16-4.21. 52

Figure 4.16 Measured and simulated transient response in the turn-on process with gate drive resistance of Rg = 2.7 Ω Figure 4.17 Measured and simulated transient response in the turn-off process with gate drive resistance of Rg = 2.7 Ω 53

Figure 4.18 Measured and simulated transient response in the turn-on process with gate drive resistance of Rg = 5 Ω Figure 4.19 Measured and simulated transient response in the turn-off process with gate drive resistance of Rg = 5 Ω 54

Figure 4.20 Measured and simulated transient response in the turn-on process with gate drive resistance of Rg =10 Ω Figure 4.21 Measured and simulated transient response in the turn-off process with gate drive resistance of Rg = 10 Ω The turn-on time Ton is defined as the time from Id reaching 10% of the steady-state current to Vds falling to 10% of the DC bus voltage and turn-off time Toff is defined as Vds rising to 10% of the bus voltage to Id falling to 10% of the load current. As we can 55

seen in both cases, when Rg = 2.7ohm, T on and T off is around 10 ns; when Rg =5 ohm, Ton and T off is around 15 ns; when Rg = 10 ohm, T on and T off is around 20 ns. 4.4 Conclusion and Discussion This chapter has introduced the basic concept of power MOSFET switching characterization. A double-pulse tester was built to perform the switching behavior. By comparing the simulation with the experimental waveforms, the effectiveness of the device models has been verified. Although, the double pulse test provides a good solution for evaluating switching dynamic characteristics, there s still accuracy problem related to it:(1) For the circuit main loop, because of the high dv/dt and di/dt, the current overshoot can be high. As a result, the energy stored in the stray inductance will have oscillation with the output capacitor of the MOSFET. (2) For the gate charge loop, the stray inductance will also slow down the charging time or even cause the mis-trigger of the MOSFET if it causes too large oscillation on gate charge signal. (3) For the measurement side, the parasitic capacitance and the stray inductance in the current shunt will affect the accuracy of measurement on Vds and Id. This is because under high frequency resonance in the circuit, even very limited parasitic parameters will induce relatively high impedance, which can affect the accuracy obviously. Therefore, the double pulse tester design has very high requirement for the PCB layout and measurement even though the circuit is simple. In this design, both the gate charge loop and the main power loop lengths have been minimized for stray inductance 56

reduction. Thus, in the switching waveforms, the minimized switching overshoot and oscillation is realized. Also, to guarantee the measurement accuracy, a self-made current shunt is tested to perform a better switching current waveform while Tektronix TPP0850 voltage probe provides small parasitic capacitance and bandwidth as high as 800 MHz. In this case, the hardware can output optimized switching characteristics and the measurement error can be reduced to an acceptable range. 57

Chapter 5 Concluding Remark Silicon carbide power MOSFETs have enormous potential for replacing silicon based devices in high power, high temperature applications. The advantages of SiC over Si lie in its material properties such as high bandgap, high thermal conductivity and very high breakdown field. These properties make SiC MOS devices ideal for high power electronics applications. In this thesis, we studied the static and switching characteristics of the SiC MOSFET. Characterization methods and procedures, which are very generic and can also be applied to the study of SiC JFETs, have been discussed in detail. An Agilent power curve tracer, which is designed for the power devices characterization, has been introduced to provide a much easier, faster and accurate way to perform characterization. Based on the characterization results, two device sub-circuit models have been built and verified by comparing simulation results with experimental results. The limitations of the model have been discussed as well. 58

References [1] Ahmed Elasser, T. Paul Chow, "Silicon Carbide Benefits and Advantages for Power Electronics Circuits and Systems," Proceedings of the IEEE, Vol. 90, No. 6, 2002, pp. 969-986. [2] B. J. Baliga, Fundamental of Power Semiconductor Devices. New York: Springer, 2008. [3] L. Stevanovic, K. Matocha, P. Losee, J. Glaser, J. Nasadoski, and S. Arthur, Recent advances in silicon carbide mosfet power devices, in Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE, feb. 2010, pp. 401-407. [4] Ostling, M. Sch. of ICT, KTH R. Inst. of Technol., Kista, Sweden Ghandi, R. ; Zetterling, C., SiC power devices Present status, applications and future perspective, in Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium, 23-26 May 2011. [5] J. C. Zolper, "Emerging silicon carbide power electronics components," IEEE 2005 Applied Power Electronics Conference and Exposition (APEC 2005), Vol. 1, 6-10 March 2005, pp. 11-17. [6] Veliadis, V. Northrop Grumman Corp., Linthicum, MD McNutt, T. ; McCoy, M. ; 59

Hearne, H. ; Potyraj, P. ; Scozzie, C., Large Area Silicon Carbide Vertical Junction Field Effect Transistors for High Temperature Power Conditioning Applications, in Vehicle Power and Propulsion Conference, 2007. VPPC 2007. IEEE [7] Muhammad H.Rashid, Microelectronic circuits Analysis and Design. Canada: Cengage Learning, 2011. [8]. A. Hull et al., Status of 1200 4H-SiC power MOSF s, in Proc. S RS, 2007, pp. 1 2. [9] Agilent technologies, Agilent B1505A Power Device Analyzer/Curve racer User s Guide, Edition 5, June 2011. [10] Agilent technologies, Agilent B1505A Power Device Analyzer/Curve Tracer Quick Start Guide, Edition 1, October 2009. [11] B. J. Baliga, Advanced Power MOSFET Concepts. New York: Springer, 2010. [12] M. Hasanuzzanman, S. K. slam, M.. Alam, Parameter e traction and SP C model development for 4H-silicon carbide (SiC power MOSF, in nt l Semiconductor Device Research Symposium 2005, pp. 292-293, Dec. 2005. [13] M. Hasanuzzanman, S. K. Islam, L. M. olbert, esign, modeling and characterization of power MOSFET in 4H-SiC for extreme environment applications, in Government Microcircuit Applications & Critical Technology Conf. (GOMACTech) 2005, pp. 449-452, Apr. 2005. [14] General Electric, General Electric SiC MOSFET: Ultrafast low on-resistance 1200V Sic power MOSFET (GE12N30S), 17 th Aug. 2009 [15] nternational Rectifier, Measuring H F MOSF characteristics, Application Note AN-957. 60

[16] Yuan Taur, Tak H.Ning, Fundamental of Modern VLSI Devices. New York: Cambridge University Press, 2 nd edition, 2009 [17] Siddharth Potbhare, Modeling and Characterization of 4H-SiC MOSFETs: High Field, High emperature, and ransient ffects. Ph. dissertation, epartment fo Electrical and Computer Engineering, University of Maryland, 2008. [18] nternational Rectifier, Measuring H F MOSF characteristics, Application Note AN-957. [19] nternational Rectifier, A more realistic characterization of power MOSF output capacitance COSS, Application ote AN-1001. [20] Agilent technologies, Direct Power MOSFET Capacitance Measurement at 3000V, Application Note B1505-4, 2011. [21] Zheng Chen, Characterization and Modeling of High-Switching-Speed Behavior of SiC Active evices, M.S. thesis, epartment of Electrical Engineering, Virginia Polytechinic Institute and State University, December 2009. [22]. McShane and K. Shenai, RF de-embedding technique for extracting power MOSF package parasitics, in nt l Workshop on ntegrated Power Packaging 2000, pp. 55-59, 2000. [23] S. Potbhare, N. Goldsman, A. Lelis, J. M. McGarrity, F. B. McLean, and D. Habersat, A physical model of high temperature 4H-SiC MOSF s, in IEEE Trans. Electron Devices, vol. 55, no. 8, Aug. 2008, pp. 2029-2039. [24] M. Hasanuzzanman, S. K. slam, L. M. olbert, esign, modeling and characterization of power MOSFET in 4H-SiC for e treme environment applications, in 61

Government Microcircuit Applications & Critical Technology Conf. (GOMACTech) 2005, pp. 449-452, Apr. 2005 [25] P.. Lungu, Modeling of SiC vertical power MOSF structure using the fundamental MOSF s set of equations, in nt l Semiconductor Conf. 1, vol. 2, pp. 327-330, 1996. [26]. R. Mc utt, A. R. Hefner, Jr., H. A. Mantooth,. erning, S. H. Ryu, Silicon carbide power MOSF model and parameter e traction sequence, in rans. Power Electronics, vol. 22, no. 2, Mar. 2007, pp. 353-362. [27] Daniel Foty, Daniel P. Foty, MOSFET Modeling with SPICE: principles and practice. Prentice Hall PTR, 1997 [28] Synopsys Saber, Saber Model Architect Tool User Guide, Jun. 2006. [2 ] Synopsys Saber, ver. Y-2006.06-SP2, Synopsys Inc., Mountain View, CA [30] Phankong, N., Yanagi, T., Hikihara,., valuation of inherent elements in a SiC power MOSFET by its equivalent circuit, in Power lectronics and Applications ( P 2011), Proceedings of the 2011-14th European Conference, Aug. 30 2011-Sept. 1 2011 [31] B. J. Baliga, Silicon Carbide Power Devices. Singapore: World Scientific, 2006, pp.15-33. [32] B. J. Baliga, Modern Power Devices. New York: Wiley, 1987. [ ] O Semiconductor, Understanding and predicting power MOSF switching behavior, Application ote A -1090/D, Aug. 2002. [ 4] Fairchild Semiconductor, Power MOSF switching waveforms: a new insight, Application Note AN-7502, Oct. 1999. 62

[ 5] L. Aubard,. erneau, J. C. Crebier, C. Schaeffer, Y. Avenas, Power MOSF switching waveforms: an empirical model based on a physical analysis of charge loacations, in Proc. P SC 2002, vol., pp. 1 05-1310, 2002. [36] J. Wang, T. Zhao, J. Li, A. Q. Huang, R. Callanan, F. Husna, and A. Agarwal, Characterization, modeling and application of 10-k SiC MOSF, in rans. Electron Devices, vol. 55, no. 8, Aug. 2008, pp. 1798-1805. 63