Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Description Advanced HEXFET Power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The TO220 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO220 contribute to its wide acceptance throughout the industry. G IRF00N HEXFET Power MOSFET D S TO220AB PD 9278 V DSS = 55V R DS(on) = mω I D = 85A Absoute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, @ 0V 85 I D @ T C = C Continuous Drain Current, @ 0V 60 A I DM Pused Drain Current 290 P D @T C = 25 C Power Dissipation 80 W Linear Derating Factor.2 W/ C GatetoSource Votage ± 20 V I AR Avaanche Current 43 A E AR Repetitive Avaanche Energy 8 mj dv/dt Peak Diode Recovery dv/dt ƒ 3.6 V/ns T J Operating Junction and 55 to 75 T STG Therma Resistance Storage Temperature Range Sodering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 632 or M3 srew 0 bf in (.N m) Parameter Typ. Max. Units R θjc JunctiontoCase 0.85 R θcs CasetoSink, Fat, Greased Surface 0.50 C/W R θja JunctiontoAmbient 62 www.irf.com C 3/6/0
IRF00N Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Votage 55 V = 0V, I D = 250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient 0.058 V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance mω = 0V, I D = 43A (th) Gate Threshod Votage 2.0 4.0 V V DS =, I D = 250µA g fs Forward Transconductance 32 S V DS = 25V, I D = 43A I DSS DraintoSource Leakage Current 25 V µa DS = 55V, = 0V 250 V DS = 44V, = 0V, T J = 50 C I GSS GatetoSource Forward Leakage = 20V na GatetoSource Reverse Leakage = 20V Q g Tota Gate Charge 20 I D = 43A Q gs GatetoSource Charge 9 nc V DS = 44V Q gd GatetoDrain ("Mier") Charge 4 = 0V, See Fig. 6 and 3 t d(on) TurnOn Deay Time 3 V DD = 28V t r Rise Time 76 I D = 43A ns t d(off) TurnOff Deay Time 39 R G = 3.6Ω t f Fa Time 48 = 0V, See Fig. 0 Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 320 = 0V C oss Output Capacitance 690 V DS = 25V C rss Reverse Transfer Capacitance 40 pf ƒ =.0MHz, See Fig. 5 E AS Singe Puse Avaanche Energy 030 250 mj I AS = 4.3A, L = 270µH D S SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 85 (Body Diode) showing the A G I SM Pused Source Current integra reverse 290 (Body Diode) pn junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 43A, = 0V t rr Reverse Recovery Time 69 ns T J = 25 C, I F = 43A Q rr Reverse Recovery Charge 220 230 nc di/dt = A/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 270µH R G = 25Ω, I AS = 43A, =0V (See Figure 2) ƒ I SD 43A, di/dt 20A/µs, V DD V (BR)DSS, T J 75 C Puse width 400µs; duty cyce 2%. This is a typica vaue at device destruction and represents operation outside rated imits. This is a cacuated vaue imited to T J = 75 C. Cacuated continuous current based on maximum aowabe junction temperature. Package imitation current is 75A. 2 www.irf.com
IRF00N I D, DraintoSource Current (A) 0 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) 0 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, DraintoSource Votage (V) 20µs PULSE WIDTH T J = 75 C 0. 0 V DS, DraintoSource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, DraintoSource Current (A) 0 T J = 25 C T = 75 J C V DS = 25V 20µs PULSE WIDTH 4 6 8 0 2, GatetoSource Votage (V) R DS(on), DraintoSource On Resistance (Normaized) 2.5 I D = 85A 2.0.5.0 0.5 = 0V 0.0 60 40 20 0 20 40 60 80 20 40 60 80 T J, Junction Temperature( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature www.irf.com 3
I D, DraintoSource Current (A) C, Capacitance(pF) IRF00N 6000 5000 4000 3000 2000 0 0 Ciss Coss Crss = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 0 V DS, DraintoSource Votage (V), GatetoSource Votage (V) 20 6 2 8 4 I = D 43A V DS= 44V V DS= 27V V DS= V FOR TEST CIRCUIT SEE FIGURE 3 0 0 20 40 60 80 20 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. DraintoSource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I SD, Reverse Drain Current (A) 0 0 T J = 75 C T J = 25 C = 0 V 0. 0.0 0.6.2.8 2.4 V SD,SourcetoDrain Votage (V) 0 0 Tc = 25 C Tj = 75 C Singe Puse OPERATION IN THIS AREA LIMITED BY R DS (on) µsec msec 0msec 0 0 V DS, DraintoSource Votage (V) Fig 7. Typica SourceDrain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4 www.irf.com
IRF00N LIMITED BY PACKAGE V DS R D I D, Drain Current (A) 80 60 40 20 0 25 50 75 25 50 75 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature V DS 90% R G Puse Width µs Duty Factor 0. % D.U.T. Fig 0a. Switching Time Test Circuit 0% t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms V DD Therma Response (Z thjc ) 0. D = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase www.irf.com 5
IRF00N R G V DS 20V tp L D.U.T I AS 0.0Ω Fig 2a. Uncamped Inductive Test Circuit tp 5V DRIVER V (BR)DSS V DD A E AS, Singe Puse Avaanche Energy (mj) 500 400 300 200 TOP BOTTOM I D 8A 30A 43A 0 25 50 75 25 50 75 Starting T, Junction Temperature( J C) Fig 2c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF Q GS Q GD D.U.T. V DS V G 3mA Charge Fig 3a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 3b. Gate Charge Test Circuit 6 www.irf.com
IRF00N Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. Device Under Test V DD * Reverse Poarity of D.U.T for PChanne Driver Gate Drive Period P.W. D = P.W. Period [ =0V ] *** D.U.T. I SD Waveform Reverse Recovery Current ReAppied Votage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Rippe 5% Forward Drop [ V DD ] [ ] I SD *** = 5.0V for Logic Leve and 3V Drive Devices Fig 4. For Nchanne HEXFET power MOSFETs www.irf.com 7
IRF00N Package Outine TO220AB Dimensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.03) 0.54 (.45) 0.29 (.405) 3.78 (.49) 3.54 (.39) A 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530) 2 3 4 6.47 (.255) 6.0 (.240).5 (.045) MIN 4.06 (.60) 3.55 (.40) LEAD ASSIGNMENTS GATE 2 DR AIN 3 SOURCE 4 DR AIN 3X.40 (.055).5 (.045) 2.54 (.) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.04) DIMENSIONING & TOLERANCING PER ANSI Y4.5M, 982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO220AB. 2 CON TR OLLING DIMENSION : INC H 4 HEATSINK & LE AD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220AB EXAMPLE : THIS IS AN IRF00 WITH ASSEMBLY LOT CODE 9BM INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRF00 9246 9B M PART NUMBER DATE CODE (YYW W ) YY = YEAR WW = WEEK A Data and specifications subject to change without notice. This product has been designed and quaified for the automotive [Q0] market. Quaification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (30) 252705 TAC Fax: (30) 2527903 Visit us at www.irf.com for saes contact information. 3/0 8 www.irf.com
Note: For the most current drawings pease refer to the IR website at: http://www.irf.com/package/