TIP31, TIP32 High Power Bipolar Transistor



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Features: Collector-Emitter sustaining voltage - V CEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C,. Collector-Emitter saturation voltage - V CE(sat) = 1.2V (Maximum) at I C = 3.0A. Current gain-bandwidth product f T = 3.0MHz (Minimum) at I C = 500mA. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres NPN TIP31A PNP TIP32A 3 Ampere Complementary Silicon Power Transistors 60-100 Volts 40 Watts TO-220 Page 1 31/05/05 V1.0

Maximum Ratings Characteristic Symbol TIP31A TIP32A TIP31C Unit Collector-Emitter Voltage V CEO 60 100 Collector-Base Voltage V CBO V Emitter-Base Voltage V EBO 5.0 Collector Current-Continuous -Peak I C 3.0 5.0 A Base Current I B 1.0 Total Power Dissipation at T C = 25 C Derate above 25 C P D 40 0.32 W W/ C Operation and Storage Junction Temperature Range T J,T STG -65 to +150 C Thermal Characteristics Characteristic Symbol Maximum Unit Thermal Resistance Junction to case R θjc 3.125 C/W Page 2 31/05/05 V1.0

Electrical Characteristics (T C = 25 C unless otherwise noted) OFF Characteristics Characteristic Symbol Minimum Maximum Unit Collector-Emitter Sustaining Voltage (1) (I C = 30mA, I B = 0) TIP31A, TIP32A TIP31C, V CEO(sus) 60 100 - V Collector Cut off Current (V CE = 30V, I B = 0) TIP31A, TIP32A (V CE = 60V, I B = 0) TIP31C, I CEO - 0.3 Collector Cut off Current (V CE = 60V, V EB = 0) TIP31A, TIP32A (V CE = 100V, V EB = 0) TIP31C, I CES - 0.2 ma Emitter Cut off Current (V EB = 5.0V, I C = 0) I EBO - 1.0 ON Characteristics (1) DC Current Gain (I C = 1.0A, V CE = 4.0V) (I C = 3.0A, V CE = 4.0V) h FE 25 10-50 - Collector-Emitter Saturation Voltage (I C = 3.0A, I B = 375mA) Base-Emitter On Voltage (I C = 3.0A, V CE = 4.0V) V CE(sat) - 1.2 V BE(on) - 1.8 V Dynamic Characteristics Current Gain-Bandwidth Product (2) (I C = 500mA, V CE = 10V, f TEST = 1MHz) f T 3.0 - MHz Small Signal Current Gain (I C = 500mA, V CE = 10V, f = 1kHz) h FE 20 - - (1) Pulse Test: Pulse width 300µs, Duty Cycle 2.0% (2) f T= h FE f TEST Page 3 31/05/05 V1.0

Figure - 2 Switching Time Equivalent Circuit Figure - 3 Turn-On Time Figure - 4 DC Current Gain Figure - 5 Turn-Off Time Page 4 31/05/05 V1.0

Figure - 6 Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate I C -V CE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 6 curve is based on T J(PK) = 150 C; T C is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(PK) 150 C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure - 7 Collector Saturation Region Figure - 8 Capacitances Page 5 31/05/05 V1.0

Figure - 9 ON Voltage Figure - 10 Collector Cut-off Region Specifications TYPE Part Number NPN PNP TIP31A TIP31C TIP32A Page 6 31/05/05 V1.0

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