BTA4 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and blocking BTA4 6 8 voltage capability and high thermal V DRM Repetitive peak offstate 6 8 V cycling performance. Typical voltages applications include motor control, I T(RMS) RMS onstate current 25 25 A industrial and domestic lighting, heating I TSM Nonrepetitive peak onstate 9 9 A and static switching. current PINNING TO22AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION main terminal 2 main terminal 2 tab T2 T 3 gate tab main terminal 2 23 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 6 8 V DRM Repetitive peak offstate 6 8 V voltages I T(RMS) RMS onstate current full sine wave; T mb 9 C 25 A I TSM Nonrepetitive peak full sine wave; T j = 25 C prior to onstate current surge t = 2 ms t = 6.7 ms 9 29 A A I 2 t I 2 t for fusing t = ms 8 A 2 s di T /dt Repetitive rate of rise of I TM = 3 A; I G =.2 A; onstate current after di G /dt =.2 A/µs triggering T2+ G+ 5 A/µs T2+ G T2 G 5 5 A/µs A/µs T2 G+ A/µs I GM Peak gate current 2 A P GM Peak gate power 5 W P G(AV) Average gate power over any 2 ms period.5 W T stg Storage temperature 4 5 C T j Operating junction 25 C temperature Although not recommended, offstate voltages up to 8V may be applied without damage, but the triac may switch to the onstate. The rate of rise of current should not exceed 5 A/µs. January 22 Rev.4
BTA4 series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th jmb Thermal resistance full cycle. K/W junction to mounting base half cycle.4 K/W R th ja Thermal resistance in free air 6 K/W junction to ambient STATIC CHARACTERISTICS T j = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 2 V; I T =. A I L Latching current V D = 2 V; I GT =. A T2+ G+ 6 35 T2+ G T2 G 35 35 T2 G+ 23 7 T2+ G+ 8 4 T2+ G 3 6 T2 G T2 G+ 8 5 4 6 I H Holding current V D = 2 V; I GT =. A T2+ T2 7 2 3 3 V T Onstate voltage I T = 3 A.3.55 V V GT Gate trigger voltage V D = 2 V; I T =. A.7.5 V V D = 4 V; I T =. A; T j = 25 C.25.4 V I D Offstate leakage current V D = V DRM() ; T j = 25 C..5 DYNAMIC CHARACTERISTICS T j = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dv D /dt Critical rate of rise of V DM = 67% V DRM() ; T j = 25 C; 3 V/µs dv com /dt offstate voltage exponential waveform; gate open circuit Critical rate of change of V DM = 4 V; T j = 95 C; I T(RMS) = 25 A; commutating voltage di com /dt = 9 A/ms; gate open circuit V/µs t gt Gate controlled turnon time I TM = 3 A; V D = V DRM() ; I G =. A; di G /dt = 5 A/µs 2 µs January 22 2 Rev.4
Philips Semiconductors BTA4 series Ptot / W 4 Tmb() / C 85 IT(RMS) / A 3 BTA4 3 2 2 9 6 3 = 8 95 5 25 2 5 9 C 5 5 25 5 5 2 25 3 IT(RMS) / A Fig.. Maximum onstate dissipation, P tot, versus rms onstate current, I T(RMS), where α = conduction angle. 5 5 5 Tmb / C Fig.4. Maximum permissible rms current I T(RMS), versus mounting base temperature T mb. ITSM / A IT(RMS) / A 5 4 3 di /dt limit T T2 G+ quadrant I T T ITSM time 2 Tj initial = 25 C us us ms ms ms T / s Fig.2. Maximum permissible nonrepetitive peak onstate current I TSM, versus pulse width t p, for sinusoidal currents, t p 2ms... surge duration / s Fig.5. Maximum permissible repetitive rms onstate current I T(RMS), versus surge duration, for sinusoidal currents, f = 5 Hz; T mb 9 C. ITSM / A 2 5 I I TSM T T time Tj initial = 25 C.6.4.2 VGT(Tj) VGT(25 C) 5.8.6 Number of cycles at 5Hz Fig.3. Maximum permissible nonrepetitive peak onstate current I TSM, versus number of cycles, for sinusoidal currents, f = 5 Hz..4 5 5 5 Fig.6. Normalised gate trigger voltage V GT (T j )/ V GT (25 C), versus junction temperature T j. January 22 3 Rev.4
BTA4 series 5 4 3 IGT(Tj) IGT(25 C) T2+ G+ T2+ G T2 G T2 G+ IT / A 8 Tj = 25 C Tj = 25 C 7 6 5 4 Vo =.73 V Rs =.5 ohms BTA4 typ 2 3 2 5 5 5 Fig.7. Normalised gate trigger current I GT (T j )/ I GT (25 C), versus junction temperature T j..5.5 2 2.5 3 VT / V Fig.. Typical and imum onstate characteristic. 3 IL(Tj) IL(25 C) Zth jmb (K/W) BTA4 2.5 unidirectional 2 bidirectional.5.. P D t p.5 t 5 5 5 Fig.8. Normalised latching current I L (T j )/ I L (25 C), versus junction temperature T j.. us.ms ms ms.s s s tp / s Fig.. Transient thermal impedance Z th jmb, versus pulse width t p. 3 2.5 2 IH(Tj) IH(25C) dv/dt (V/us) offstate dv/dt limit.5 dicom/dt = 25 A/ms 2 5 2 9. 7..5 5 5 5 Fig.9. Normalised holding current I H (T j )/ I H (25 C), versus junction temperature T j. 5 5 Fig.2. Typical commutation dv/dt versus junction temperature, parameter commutation di T /dt. The triac should commutate when the dv/dt is below the value on the appropriate curve for precommutation di T /dt. January 22 4 Rev.4
BTA4 series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5,3 3,7,3 2,8 5,9 min 5,8 3, not tinned,3 (2x) 2 3 2,54 2,54 3, 3,5 min,9 (3x),6 2,4 Notes. Refer to mounting instructions for SOT78 (TO22) envelopes. 2. Epoxy meets UL94 V at /8". Fig.3. SOT78 (TO22AB). pin 2 connected to mounting base. January 22 5 Rev.4
BTA4 series DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS 2 STATUS 3 Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNWSQ65A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 22 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. January 22 6 Rev.4