65V SuperJunction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg =3nC) % UIS tested RoHS compliant G General escription Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. S Absolute Maximum Ratings Symbol Parameter Value Units V SS rain Source Voltage 65 V I Continuous rain Current (Tc=5 ) (Tc= ).5 A I M rain Current Pulsed ) A V GS Gate to Source Voltage ±3 V EAS Single Pulse Avalanche Energy ) 3 mj I AR Single Pulse Avalanche Current ) A EAR Repetitive Avalanche Energy ). mj P Total Power issipation(@tc=5 ) erate above 5 5 W. W/ T J Junction Temperature 5 T stg Storage Temperature 55~5 Is Continuous diode forward current A Is,pulse iode pulse current A Notes:.Repetitive Rating:Pulse width limited by maximum Junction Temperature.I AS=A,V =6V,R G=5Ω,Starting T J=5 Thermal Characteristics Symbol Parameter Value Min Typ Max Units R QJC Thermal Resistance, Junction to Case.5 /W R QJA Thermal Resistance, Junctionto Ambient 6 /W WTF5Rev.A Nov.3 Copyright@Winsemi MicroelectronicsCo., Ltd., All right reserved. 39
65V SuperJunction Power MOSFET Electrical Characteristics(Tc=5 unless otherwise noted) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current I GSS V GS=±3V,V S=V ± na rain cut off current I SS V S=65,V GS=V,Tj=5 Tj=5 µa rain source breakdown voltage V(BR)SS I =5µA,VGS=V 65 V Gate threshold voltage VGS(th) VS=VGS,I =5uA.5 3.5.5 V rain source ON resistance R S(ON) Tj=5 VGS=V,I=A.83.93 Ω Tj=5.9 Gate resistance R G f=mhz,open drain. Ω Input capacitance C iss V S=5V, 5 Reverse transfer capacitance C rss VGS=V, 5 Output capacitance C oss f=mhz 3 pf Turnon delay time td(on) 3 Rise time tr V = 3V, I = A Turnoff delay time td(off) R G = Ω, V GS =V 3 ns Fall time tf 9 Gate to source charge Qgs 3 Gate to drain charge Qgd V =8V,I =A, 6 Gate charge total Qg V = to V 3 nc Gate plateau voltage Vplateau 5. 8 V Sourcerain Ratings and Characteristics(Ta=5 ) Characteristics Symbol Test Condition Min Type Max Unit iode forward voltage V S V GS= V, I F=A. V Reverse recovery time t rr V R =5 V, I F =A, ns Reverse recovery charge Q rr di F /dt= A/μs.6 µc Peak reverse recovery current I rr m A www.winsemi.com Tel : 75585688 Fax : 75585699 /7
65V SuperJunction Power MOSFET 8 7 6 Com m on Source Tc =5 C Pulse Test V =V V =7V 9 8 7 Com m on Source Tc=5 C V S =V Pulse Test rain current I (A) 5 3 V =6.5V V =6V V =5.5V rain current I (A) 6 5 3 6 6 rainsource voltage V S (V) 6 8 Gatesource voltage V (V) Fig. OnRegion characteristics Fig. Transfer characteristics. 5. 3... 3. R S (on)[ Ω ]... 9. 8. 7 V th,(normalized) Gate threshold voltage. 9. 8. 7. 6 I S =.5mA Pulse test. 6 5 5. 5 6 6 8 6 rain Current I (A) Junction temperaturet J ( C) Fig.3 OnResistance Variation vs rain Current Fig. Threshold Voltage vs. Temperature.. 5 BV SS,(Normalized) rainsource Breakdo wn Voltage.. 9. 8 V =V I S =.5mA Pulse test R S(ON ),( Normalized) r ainso urce OnResistance. 5. 5 V =V I =A Pu lse te st. 7 6 6 8 6 Junction temperaturet J ( C) 6 6 8 6 Junction temperaturet J ( C) Fig.5 Breakdown Voltage vs.temperature Fig.6 OnResistance vs.temperature www.winsemi.com Tel : 75585688 Fax : 75585699 3/7
65V SuperJunction Power MOSFET.. C i s s 8 V S =V capaci tance(pf)... Ci s s = C g s + C g d ( C d s shorted) C c i s s = C g d C o s s = C d s + C Cr ss g d Notes: f=m Hz V =V Co s s GateSource Voltag e V GS (V) 6 V S =8V I =A.. rainsource Voltge V (V) S 6 8 Total Gate Charge Q G (nc) Fig.7Capacitance Characreristics Fig.8 Gate Charge Characteristics rai n Current I (A). Limlied by R S( on) Notes: Tc =5 C Tc =5 C Single Pulse m s us rai n p owe r dissipa tio n P (W ) 3 5 3 5 5 5. rainsource Voltage V S (V) 8 6 Case temperature T c ( C) Fig.9 Maximum Safe Operation Area Fig. Power issipation vs.temperature. E+ Z θjc Normal ized Transient Thermal Resistance. E+. E. E. E3 In descending or der =.7,.5,.3,.,.5,.,.,single pulse u ty= t/t Z θjc (t)=.3 C /W Ma x.. E6. E5. E. E3. E. E. E+. E+. E+. E+3 P M t T Pulse Width t (s) Fig. Transient Thermal Response Curve www.winsemi.com Tel : 75585688 Fax : 75585699 /7
65V SuperJunction Power MOSFET R L V V Qg V V S Q g s Q g d m A U T C harge Fig. Gate Charge Test Circuit & Waveform V S R L V S 9 % R G V V V U T V % t d (o n ) t r t d( off) t o n t o f f t f Fig.3 Switching Test Circuit & Waveforms V d s L E A R =/LI A R B V S S R g I d V C + V d d I d V d s I A R U T Fig. Unclamped Inductive Switching Test Circuit & Waveform www.winsemi.com Tel : 75585688 Fax : 75585699 5/7
65V SuperJunction Power MOSFET IPAK Package imension U n it:m m E E A F 符 号 symbol M I N M A X A. 9.3 8 b.6.8 9 c. 6.5 8 5.9 7 6..8 9. 7 E 6.3 5 6.7 3 L Q E 5. 5. 6 e. 8 TYP L b c F. 6.5 8 L 8.8 9 9.6 5 L. 5.3 5 Q.. e www.winsemi.com Tel : 75585688 Fax : 75585699 6/7
65V SuperJunction Power MOSFET NOTE:.We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don't be hesitate to contact us..please do not exceed the absolute maximum ratings of the device when circuit designing. 3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT: Winsemi Microelectronics Co., Ltd. A:Futian istrict, ShenZhen Tian An Cyber Tech Plaza two East Wing Post Code : 58 Tel : 8675585657 FAX : 8675585699 Web Site : www.winsemi.com www.winsemi.com Tel : 75585688 Fax : 75585699 7/7