V ishay I ntertechnology, I nc. I INNOVAT AN TEC O L OGY N HN Power mosfets O 9 6-0 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K P o l a r PA K P o w e r PA I ThunderFET LITTLE FOOT MICO FOOT Tr e n c h F E T SkyFET Tu r b o F E T esources provides extensive support tools and information to assist you in your design. MOSFET WEB PAGE FEATUE MOSFET FAMILIES MOSFET PACKAGE COMPAISON TrenchFET Gen IV APPLICATION NOTES E Series High-Voltage THEMAL SIMULATION TOOL Series High-Voltage PAAMETIC SEACH Medium-Voltage / ThunderFET PCNS (if applicable) P-Channel Gen III SAMPLES S ugged Series CHECK ISTIBUTO STOCK ON-LINE LITEATUE LIBAY SALES CONTACTS One of the World s Largest Manufacturers of iscrete Semiconductors and Passive Components /53
Low Voltage Power MOSFETs - Compact and Efficient is a leader the industry in the development of power MOS silicon and packaging technologies that boost power management and power conversion efficiency and greatly reduce the board area required for MOSFETs in computers, laptops, notebooks, servers, tablet PCs, ebooks, cellular phones, consumer electronics and many other systems. continually innovates to meet the increasing demands of applications such as C/C conversion and load switching. For example, our TrenchFET Gen IV power MOSFET silicon technology enables on maximum resistance down to just mω. In another example, ThunderFET technology brings very low on-resistance to medium-voltage power MOSFETs. In another breakthrough, SkyFET monolithic MOSFET plus Schottky diode devices lower on-resistance compared to co-packaged devices and reduce power losses linked to the body diode of the MOSFET. The p-channel TrenchFET Gen III family of power MOSFETs offers a reduction in on-resistance compared with the previous state-of-the-art and signifies a new opportunity to reduce system power. The Vishay Siliconix portfolio also contains devices with on-resistance ratings down to. V to reduce the need for level shift circuitry, saving space and power. packaging innovations include the small-outline LITTLE FOOT, the thermally enhanced PowerPAK, offered in footprint areas from the SO-8 down to the SC-75, PolarPAK with double sided-cooling in standard, easy-to-use packaging, and chipscale MICO FOOT families. PowerPAI reduces space while still obtaining low on-resistance and high current comparable to two discretes. Each of these package types provides designers with a range of surface-mount options to ensure efficient use of space in power management, power conversion, and other power MOSFET applications. High-Voltage MOSFETs from Vishay Vishay s high-voltage MOSFET and FEFET product line, with voltages up to 000 V, serves a wide range of applications including lighting ballasts, industrial systems, renewable, UPS, servers, telecom systems, electric welding, computers, adaptors, and consumer electronics with package options including the TO-0, TO-47, PAK, IPAK, PAK, SOT3, FULLPAK 0, Super 47, HVMIP, KG, and IEONFILM. Conventional Planar Technology Gen 3 IFxxxx Series Wide voltage range Cost effective Very robust and high immunity to EMI Gen 6 IFxxxxL (FEFET) and IFxxxxK (MOSFET) Series State-of-the-art cellular planar technology Best performance in hard switched systems Highest efficiency in ZVS / resonant applications (high efficiency) Super Junction Technology Series SiHxxxxx Series New stripe planar technology Higher current density than previous generations More robust for the same die size Avalanche driven technology E Series SiHxxxxxE Series Enables a significant reduction of conducting and switching losses in switchmode power supplies (SMPS) Enables the design the AC/C power supplies that are even more efficient, more compact, lighter and cooler The basic principle of Super Junction technology is allowing the current to flow from top to bottom of the MOSFET in arranged high doped regions, reducing the impact of the epitaxial layer and thus bringing onresistance close to the zero A performance driven technology /53
Through-Hole Power MOSFET Package Max Body Height (mm) Max Width (mm) Max Footprint Area (mm ) Max epth (mm) Max Current* Super 47 0.8 6. 5.3 43 50 0.8 yes TO-47 0.7 5.87 5.3 47 50 0.3 yes TO-0 Full PAK 6. 0.63 4.83 50 3.4 yes TO-0 5.49 0.5 4.65 85 75 0.5 yes yes I PAK (TO-6).3 0.67 4.83 50 0.75 yes HVMIP 0.79 length 5 3.37 body height Max Temp. ( C ) thjf or thjc C/W) 0.46 50 0 yes IPAK (TO-5) 7.49 6.73.39 5 50. yes yes Surface-Mount PAK 5.88 0.4 0.67 65.37 4.83 0 75 0.4 yes yes PAK 0.4 6.73 70.06.38 70 75. yes yes SOT-3 7.9 6.7 48.84.8 0.79 50 40 yes yes PowerPAI 6x5 6.08 5.08.6 0.8 8 50.5 yes yes PowerPAI 6x3.7 6.08 3.8 3.6 0.8 6 50 4.6 yes yes PowerPAI 3x3 3 3 9 0.8 5 50 4 yes yes PolarPAK 6.3 5.3 33.45 0.85 45 50 + yes yes PowerPAK SO-8L 6.5 5.5 3.8.4 6 50.8 yes yes http://www.vishay.com/mosfets/tapereel-package-list/ 3/53
Power MOSFET Package Surface-Mount (continued) Max Body Height (mm) Max Width (mm) Max Footprint Area (mm ) Max epth (mm) Max Current* PowerPAK SO-8 6. 5.6 3.6. 9 50.5 yes yes SO-8 5 6. 3.75 5 50 6 yes yes TSSOP-8 3. 6.6 0.46. 50 5 yes yes PowerPAK -8 3.4 3.4.56. 4.4 50.4 yes yes PowerPAK -8S 3.3 3.3 0.89 0.83 3 50. yes yes TSOP-6 3..98 9.4. 6.8 50 30 yes yes PowerPAK ChipFET 3.08.98 6. 0.85.6 50 4 yes yes 06-8 ChipFET 3..8 5.58. 9.5 50 0 yes yes SOT-3 3.04.64 8.03. 4.9 50 50 yes yes PowerPAK SC-70.5.5 4.6 0.8 8.8 50 6.5 yes yes Thin PowerPAK SC-70.5.5 4.6 0.65 50 6.5 yes yes SC-70..4 5.8. 3.9 50 45 yes yes MICO FOOT see individual datasheet 0.65 7 50 0 yes yes PowerPAK SC-75.7.7.89 0.8 4.8 50 9.5 yes yes Thin PowerPAK SC-75.7.7.89 0.65 7.5 50 9.5 yes yes SC-75A.6.7.7 0.8 0.5 50 yes yes SC-89.7.7.89 0.6 0.5 50 yes yes www.vishay.com/mosfets/tapereel-package-list/ 4/53 Max Temp. ( C ) thjf or thjc C/W)
The Power MOSFET is sorted by function, package size (biggest to smallest V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g Single N-Channel SUPE47 IFPS43N50K 500 0.09 43 33.3 450 IFPS40N50L 500 0. 40 53.3 450 SiHS36N50 500 30 0.3 36 83 446 IFPS37N50A 500 0.3 36 0 446 SiHS0N50C 500 0.7 0 65 50 IFPS40N60K 600 0.3 40 0 570 IFPS38N60L 600 0.5 38 3.3 540 TO47 IFP064 60 0.009 70 6.7 300 IFP054 60 0.04 70 06.7 30 IFP048 60 0.08 70 73.3 90 IFP50 00 0.055 4 93.3 IFP40 00 0.077 3 48 IFP50 00 0.085 30 93.3 90 IFP40 00 0.8 0 46.7 50 IFP60 00 0.55 46 53.3 80 IFP64 50 0.075 38 40 80 IFP54 50 0.4 3 93.3 90 IFP44 50 0.8 5 4 50 SiHG5N40 400 30 0.7 5 44 78 IFP360 400 0. 3 40 80 IFP360LC 400 0. 3 73.3 80 IFP350LC 400 0.3 8 50.7 90 IFP350 400 0.4 6 00 90 IFP340 400 0.55 4.3 50 SiHG3N50 500 30 0.5 30 64 390 IFP3N50K 500 0.6 3 6.7 460 IFP3N50L 500 0.8 3 40 460 5/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SiHGN50 500 30 0.3 49 3 IFPN50A 500 0.3 80 77 IFP3N50L 500 0.35 3 00 370 IFP460B 500 0 0.5 0 85 78 SIHG0N50C 500 0.7 0 65 50 IFP7N50L 500 0.3 6 86.7 0 SIHG6N50C 500 0.38 6 45 50 SiHG4N50 500 30 0.4 4 9 08 IFP448 500 0.6 56 80 IFP440 500 0.85 8.8 4 50 SiHG73N60E 600 0 0.039 73 4 50 SiHG47N60E 600 0 0.064 47 47 357 SiHG30N60E 600 0 0.5 9 85 50 SiHGN60E 600 0 0.8 57 7 IFP7N60K 600 0. 7 0 500 IFP6N60L 600 0.5 6 80 470 IFPN60K 600 0.8 00 370 IFPN60L 600 0.3 50 330 SIHG7N60 600 30 0.34 7 45 77.8 IFPC60 600 0.4 6 40 80 IFPC60LC 600 0.4 6 80 80 IFPC50A 600 0.58 46.7 80 IFPC50 600 0.6 93.3 80 IFPC50LC 600 0.6 3 56 90 IFPC40 600. 6.8 40 50 SiHG4N65E 650 0 0.45 4 8 50 IFPE50 800. 7.8 33.3 90 IFPE40 800 5.4 86.7 50 IFPE30 800 3 4. 5 5 IFPF50 900.6 6.7 33.3 90 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 6/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFPF40 900.5 4.7 80 50 IFPF30 900 3.7 3.6 5 5 IFPG50 000 6. 6.7 90 IFPG40 000 3.5 4.3 80 50 IFPG30 000 5 3. 53.3 5 FULLPAK0 IFIZ48G 60 0.08 37 73.3 IFIZ44G 60 0.08 30 63.3 ILIZ44G 60 0.039 z 30 44 48 IFIZ34G 60 0.05 0 30.7 4 ILIZ34G 60 0.07 z 0 3.3 4 IFIZ4G 60 0. 4 6.7 ILIZ4G 60 0.4 z 4 37 IFIZ4G 60 0. 8 7.3 0 ILIZ4G 60 0.8 z 8 5.6 5 IFI540G 00 0.077 7 48 ILI540G 00 0. z 7 4.7 0 IFI530G 00 0.6 9.7 0 ILI530G 00 0. z 9.7 8.7 0 IFI50G 00 0.7 7. 0.7 ILI50G 00 0.38 z 7. 8 0 IFI50G 00 0.54 4.5 5.5 7 IFI640G 00 0.8 9.8 46.7 40 ILI640G 00 0.7 z 9.8 44 40 IFI630G 00 0.4 5.9 8.7 3 ILI630G 00 0.5 z 5.9 6.7 3 IFI60G 00 0.8 4. 9.3 30 ILI60G 00 z 4. 0.7 30 IFI644G 50 0.8 7.9 45.3 40 IFI634G 50 0.45 5.6 7.3 3 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 7/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFI64G 50. 5.5 3 SiHF0N40 400 30 0.6 0 5 33 IFI740GLC 400 0.55 6 6 40 IFI740G 400 0.55 5.4 44 40 SiHF6N40 400 30 6 9 30 IFI730G 400 3.7 5.3 3 IFI70G 400.8.6 3.3 30 SiHF8N50 500 30 0.8 8 38 39 SiHF6N50C 500 0.38 6 45 38 IFIB7N50A 500 0.5 6.6 34.7 60 SiHFN50C 500 0.555 3 36 SiHF8N50 500 30 0.85 8.7 5 33 SIHF8N50L 500 8 40 SiHF5N50 500 30.5 5.3 0 30 IFI80G 500 3. 6 30 SiHF30N60E 600 0 0.5 9 85 37 SiHFN60E 600 0 0.8 57 7 SiHF5N60E 600 0 0.8 5 38 80 SiHFN60E 600 0 0.38 9 47 SiHF7N60E 600 0 0.6 7 0 3 IFIB6N60A 600 0.75 5.5 3.7 60 IFIBC40G 600. 3.5 40 40 IFIBC40GLC 600. 4 6 40 IFIBC30G 600..5 0.7 35 IFIBC0G 600 4.4.7 30 IFIB5N65A 650 0.93 5. 3 60 IFIBE30G 800 3. 5 35 IFIBE0G 800 6.5.4 5.3 30 IFIBF30G 900 3.7.9 5 35 IFIBF0G 900 8. 5.3 30 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 8/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g TO-0 SUP90N03-03 30 0 0.009 0.0033 90 7 8.5 50 SUP85N03-3m6P 30 0 0.0036 0.0044 85 67 78. SUP50N03-5mP 30 0 0.005 0.0063 50 44.7 59.5 SUP90N04-3m3P 40 0 0.0033 0.004 90 87 5 IFZ0 50 0. 5 40 IFZ0 50 0. 7. 0 SUP90N06-5m0P 60 0 0.005 90 05 300 SUP90N06-6m0P 60 0 0.006 90 78.5 7 SUP60N06-P 60 0 0.0 60 33 00 IFZ48 60 0.08 50 73.3 IFZ48 60 0.08 50 73.3 90 IFZ40 60 0.08 50 67 50 IFZ44 60 0.08 50 44.7 50 IFZ44 60 0.08 50 44.7 50 ILZ44 60 0.039 z 50 44 50 IFZ34 60 0.05 30 30.7 ILZ34 60 0.07 z 30 3.3 88 ILZ4 60 0.4 z 7 60 IFZ4 60 0. 0 7.3 43 ILZ4 60 0.8 z 0 5.6 0 IFZ4 60 0. 7 5 60 SUP90N08-4m8P 75 0 0.0048 0.0085 d 90 05 300 SUP90N08-6m8P 75 0.0068 90 75 7 SUP90N08-7m7P 75 0 0.0077 90 69 08.3 SUP90N08-8mP 75 0 0.008 90 58 50 SUP90N0-8m8P 00 0 0.0088 90 97 300 SUP85N0-0 00 0 0.0 0.0 85 05 50 SUP60N0-8P 00 0 0.083 0.03 r 60 48 50 SUP40N0-30 00 0 0.03 0.034 d 40 35 07 9/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF540 00 0.077 8 48 50 IL540 00 0. z 8 4.7 0 IF530 00 0.6 4 7.3 88 IL530 00 0.6 t 5 8.7 IF50 00 0.7 9. 0.7 60 IL50 00 0.7 t 9. 8 IL50 00 5.6 4. IF50 00 0.54 5.6 5.5 43 SUP90N5-8P 50 0 0.08 90 64 375 SUP8N5-5 50 0 0.05 0.06 d 8 33 0 SUP57N0-33 00 0 0.033 57 90 300 SUP36N0-54P 00 5 0.053 0.054 s 36 57 66 IF640 00 0.8 8 46.7 5 IL640 00 0.7 z 7 44 5 IF630 00 0.4 9 8.7 74 IL630 00 0.5 z 9 6.7 74 IF60 00 0.8 5. 9.3 50 IL60 00 z 5. 0.7 50 IF60 00.5 3.3 5.5 36 SUP40N5-60 50 30 0.06 0.064 d 40 95 300 IF644 50 0.8 4 45.3 5 IF634 50 0.45 8. 7.3 74 IF64 50. 4.4 9.3 50 IF64 50.7 5.5 36 SiHP5N40 400 30 0.7 5 44 78 IF740A 400 0.55 0 4 5 IF740LC 400 0.55 0 6 5 IF740 400 0.55 0 4 5 SiHP0N40 400 30 0.6 0 5 47 SiHP6N40 400 30 6 9 04 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 0/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF730 400 5.5 5.3 74 IF730A 400 5.5 4.7 74 IF70 400.8 3.3 3.3 50 IF70 400 3.6.3 36 SIHP8N50C 500 0.7 8 65 3 IFB7N50L 500 0.3 7 86.7 00 SiHP6N50C 500 0.38 6 45 50 SiHP4N50 500 30 0.4 4 9 08 IFB3N50A 500 0.45 4 54 50 SiHPN50C 500 0.555 3 08 SiHP8N50 500 30 0.85 8.7 5 56 IF840LC 500 0.85 8 6 5 SiHP5N50 500 30.5 5.3 0 04 IF80 500 3.5 6 50 IF80A 500 3.5.3 50 SiHP30N60E 600 0 0.5 9 85 50 SiHPN60E 600 0 0.8 57 7 SiHP5N60E 600 0 0.8 5 38 80 SIHP7N60 600 30 0.34 7 45 77.8 SiHPN60E 600 0 0.38 9 47 SiHP7N60E 600 0.6 7 IFB9N60A 600 0.75 9. 3.7 70 IFBC40 600. 6. 40 5 IFBC40A 600. 6. 8 96 IFBC40LC 600. 6. 6 5 IFBC30 600. 3.6 0.7 74 IFBC30A 600. 3.6 5.3 74 IFBC0 600 4.4. 50 SiHP4N65E 650 0 0.45 4 8 50 IFB9N65A 650 0.93 8.5 3 67 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V /53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFBE30 800 3 4. 5 5 IFBE0 800 6.5.8 5.3 54 IFBF30 900 3.7 3.6 5 5 IFBF0 900 8.7 5.3 54 IFBG30 000 5 3. 53.3 5 IFBG0 000.4 5.3 54 PAK (TO-63) SUM60N0-3m9P 0 0 0.0039 0.005 60 33 0 SUM40N0-P 0 0 0.0 0.06 40 7.5 83 SUM90N03-mP 30 0 0.00 0.007 90 7 8.5 50 SUM0N03-04P 30 0 0.004 0.0065 0 40 0 SUM85N03-06P 30 0 0.006 0.009 85 48 00 SUM0N04-mP 40 0 0.00 0.004 0 40 3 SUM90N04-3m3P 40 0 0.0033 0.004 90 87 5 SUM70N04-07L 40 0 0.0074 0.0 70 50 07 SUM0N06-3m4L 60 0 0.0034 0.004 0 00 375 SUM90N06-4m4P 60 0 0.0044 90 05 300 SUM75N06-09L 60 0 0.0093 0.035 75 47 5 IFZ48S 60 0.08 50 73.3 0 IFZ48S 60 0.08 50 73.3 90 IFZ44S 60 0.08 50 50 ILZ44S 60 0.039 z 50 45.3 50 IFZ34S 60 0.05 30 30.7 0 ILZ34S 60 0.05 t 3.3 0 IFZ4S 60 0. 7 6.7 0 ILZ4L 60 0. t 7 8 60 ILZ4S 60 0. t 0 IFZ4S 60 0. 0 7.3 43 ILZ4S 60 0. t 5.6 0 SUM90N08-4m8P 75 0 0.0048 0.0085 d 90 05 300 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V /53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SUM90N08-6mP 75 0 0.006 90 75 7 SUM0N08-07P 75 0 0.007 0 69 08.3 SUM0N0-09 00 0 0.0095 0 0 375 SUM60N0-7 00 0 0.065 0.09 d 60 65 50 SUM40N0-30 00 0 0.03 0.034 d 40 35 07 IF540S 00 0.077 8 48 50 IL540S 00 0. z 8 40.7 0 IF530S 00 0.6 4 7.3 88 IL530S 00 0.6 t 5 8.7 0 IF50S 00 0.7 9. 0.7 60 IL50L 00 0.7 t 9. 8 0 IF50S 00 0.54 5.6 5.5 43 IL50S 00 0.76 z 5.6 4. 0 SUM75N5-8P 50 0 0.08 75 64 3.5 SUM40N5-38 50 0 0.038 0.04 d 40 38 66 SUM3N5-73 50 0 0.073 0.077 d 3 00 SUM65N0-30 00 0 0.03 65 90 375 SUM7N0-78 00 0 0.078 0.083 d 7 40 50 IF640S 00 0.8 8 46.7 5 IF640L 00 0.8 8 46.7 30 SUM09N0-70 00 0 0.7 0.3 d 9 60 IL640S 00 0.7 z 7 44 5 IF630S 00 0.3 9 3.3 74 IL630S 00 0.5 z 9 6.7 74 IF60S 00 0.8 5. 9.3 50 IL60S 00 0.8 z 5. 0.7 50 IF60S 00.5 3.3 5.5 36 SUM45N5-58 50 30 0.058 0.06 d 45 95 375 SUM8N5-65 50 0 0.65 8 30 50 IF644S 50 0.8 4 45.3 5 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 3/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF634S 50 0.45 8. 7.3 74 IF64S 50. 4.4 9.3 50 IF64S 50.7 5.5 36 IF740AS 400 0.55 0 4 5 IF740S 400 0.55 0 4 5 IF740AL 400 0.55 0 4 5 IF730AS 400 5.5 4.7 74 IF730S 400 5.5 4.7 74 IF730AL 400 5.5 4.7 74 IF70S 400.8 3.3 3.3 50 IF70S 400 3.6.3 36 SiHB6N50C 500 0.38 6 45 50 IFSN50A 500 0.5 34.7 70 IFSLN50A 500 0.55 34 90 SiHBN50C 500 0.555 3 08 IF840AL 500 0.85 8 5.3 5 IF840AS 500 0.85 8 5.3 5 IF840L 500 0.85 8 6 5 IF840LCL 500 0.85 8 6 5 IF840LCS 500 0.85 8 6 5 IF840S 500 0.85 8 4 5 IF830AL 500.4 5 6 74 IF80AS 500 3.5.3 50 IF80S 500 3.5 6 50 IF80AL 500 3.5.3 50 SiHB30N60E 600 0 0.5 9 85 50 SiHBN60E 600 0 0.8 57 7 SiHB5N60E 600 0.8 5 38 80 SiHBN60E 600 0.38 9 47 IFSL9N60A 600 0.75 9. 3.7 70 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 4/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFS9N60A 600 0.75 9. 3.7 70 IFBC40L 600. 6. 40 30 IFBC40S 600. 6. 40 5 IFBC40AS 600. 6. 8 5 IFBC30AS 600. 3.6 5.3 74 IFBC30AL 600. 3.6 5.3 74 IFBC30S 600. 3.6 0.7 74 IFBC30L 600. 3.6 0.7 74 IFBC0L 600 4.4. 50 IFBC0S 600 4.4. 50 SiHB4N65E 650 0 0.45 4 8 50 IFBE30S 800 3 4. 5 5 IFBE30L 800 3 4. 5 5 IFBF30S 900 3.7 3.6 5 5 IFBF0S 900 8.7 5.3 54 IFBF0L 900 8.7 5.3 54 IPAK / TO-5 IFU00 60 0. 4 5 4 IFU04 60 0. 4 5 4 ILU04 60 0. t 4 8 4 IFU04 60 0. 7.7 5 ILU04 60 0. t 7.7 8.4 5 SUU09N0-76P 00 0 0.076 0.096 d 9.7 8.5 3. IFU0 00 0.7 7.7 6 4 ILU0 00 0.7 t 7.7 4 IFU0 00 0.54 4.3 8.3 5 ILU0 00 0.54 t 4.3 6. 5 IFU0 00 0.8 4.8 4 4 IFU0 00.5.6 8. 5 IFU4 50. 3.8 4 4 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 5/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFU4 50. 8. 5 IFU30 400.8 3. 0 4 IFU30 400 3.6.7 5 SiHU5N50 500 30.5 5.3 0 04 IFU430A 500.7 5 6 0 SiHU3N50 500 30 3. 3 6 04 SiHU7N60E 600 0 0.6 7 0 78 IFUC0 600 4.4 8 4 IFUN60A 600 7.4 4 36 PAK (TO-5) SU50N0-06P 0 0 0.006 0.0095 50 9 65 SU50N0-09P 0 0 0.0095 0.07 0 0.5 39.5 SU4N03-3m9P 30 0 0.0039 0.0045 4 67 73.5 SU50N03-P 30 0 0.0 0.075 7.5 3 46.8 SU50N04-8m8P 40 0 0.0088 0.005 50 37 6 48. IF00 50 0. 8. 6.7 5 SU50N06-07L 60 0 0.0074 0.0088 96 96 36 SU50N06-09L 60 0 0.0093 0.0 50 47 36 SU3N06-3 60 0 0.03 0.045.4 6.5 3.5 IF00 60 0. 4 6.7 4 IF04 60 0. 4 6.7 4 IL04 60 0.4 z 4 0 IF04 60 0. 7.7 7.3 5 IL04 60 0.8 z 7.7 5.6 0 SU40N08-6 80 0 0.06 40 4 36 SU50N0-8P 00 0 0.085 50 48 36.4 SU35N0-6P 00 0 0.06 35 3 83 SU06N0-5L 00 0 0. 0.5 6.5.7 0 IF0 00 0.7 7.7 0.7 5 IL0 00 0.38 z 7.7 8 0 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 6/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF0 00 0.54 4.3 5.5 5 IL0 00 0.76 z 4.3 4. 5 SU5N5-5 50 0 0.05 0.06 d 5 33 36 SU5N5-95 50 0 0.095 0. d 5 0 6 SU9N0-90 00 0 0.09 0.05 d 9 34 36 IF0 00 0.8 4.8 9.3 4 IF0 00.5.6 5.5 5 SU7N5-65 50 0 0.65 7 30 36 IF4 50. 3.8 9.3 4 IF4 50. 5.5 5 IF30 400.8 3. 3.3 4 IF30 400 3.6.7 8 5 SiH5N50 500 30.5 5.3 0 04 IF430A 500.7 5 6 0 SiH3N50 500 30 3. 3 6 04 SiH7N60E 600 0 0.6 7 0 78 IFC0 600 4.4 4 IFN60A 600 7.4 9.3 36 HVMIP IF00 50 0..4 6 IF04 60 0..5 6.7.3 IL04 60 0.4 z.5.3 IF04 60 0..7 7.3.3 IL04 60 0..7 5.6.3 IF3 60 0.7..3 IF3 60 0.8 IF0 00 0.7.3 0.7.3 IL0 00 0.38 z.3 8.3 IF0 00 0.54 5.5.3 IL0 00 0.76 z 4..3 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 7/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF0 00 0.8 0.8 9.3.3 IF0 00.5 0.6 5.5.3 IF4 50. 0.76 9.3.3 IF4 50 0.57 5.5.3 IF30 400.8 0.6 3.3.3 IF30 400 3.6 0.4.3.3 IF40 500 3 0.46 6.3 IFC0 600 4.4 0.3.3 SOT3 IFL04 60 0. 0 7.3 ILL04 60 0.8 z 5.6 IFL0 00 0.54 0 5.5 ILL0 00 0.76 z 0 4. 0 IFL0 00.5 0 5.5 IFL4 50 0 5.5 PowerPAK S0-8 Si494P 0 0.00 0.007 60 98 50 04 Si7858BP 8 0.005 0.003 0.0037 40 56 48 Si49P 8 0.0038 0.0047 40 4 36 Si404P 0 0.006 0.0075 0.005 60 64.5 04 Si440P 0 0 0.0055 0.00 60 00 43.5 04 Si866P 0 0 0.009 0.0055 60 7 35.3 83 Si800P 0 0.003 0.006 0.0034 50 89 4 69 Si890P 0 0 0.009 0.004 50 4 0 50 Si80P 0 0.005 0.0057 0.0076 30 3 5.5 7.7 Si496P 0 0 0.0045 0.0058 35 8 3. 7.7 Si40P 0 0 0.0048 0.0063 35 7 6.7 36 Si44P 0 0 0.0055 0.0074 30 9.6 4.7 Si484P 0 0 0.0083 0.05 0 5 7. 9.8 Si438P 5 0 0.008 0.003 60 70 3.6 83 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 8/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si86P 5 0 0.008 0.0035 50 60 8.4 69 Si89P 5 0 0.003 0.004 50 40 0 50 Si406P 5 0 0.0038 0.0048 40 33 5.8 48 Si436P 5 0 0.0046 0.006 40 3 3 50 Si408P 5 0 0.0063 0.008.5.5 9.3 4.8 Si850P 5 0 0.007 0.009 30 9 8.4 4.7 Si36P 5 0 0.0068 0.0093 30 6.3 7.4 5 Si808P 5 0 0.0089 0.09 0 5. 7.5 9.8 Si874P 5 0 0.0094 0.0 0 8 8 9.8 Si4P 5 0 0.0 0.05 0 0.7 4.9 5.6 SiA00P 30 0 0.00 0.0035 60 47 66 04 Si8P 30 0 0.0045 0.0065 60 3 09 04 Si58P 30 0 0.008 0.003 60 87 4.5 83 SiA0P 30 0 0.00 0.007 50 78 34.3 50 Si7658AP 30 0 0.00 0.008 60 74 34 83 SiA04P 30 0 0.005 0.003 40 5.5 7.7 Si88P 30 0 0.008 0.0033 50 63 30.5 69 SiA06P 30 0 0.005 0.0035 40 5.5 7.7 Si80P 30 0 0.003 0.0038 40 63 8.6 37.8 Si66P 30 0 0.003 0.004 40 5 5 48 Si864P 30 0 0.0036 0.0045 40 43 0 54 SiA0P 30 0 0.0037 0.005 30 34 5.4 40 Si466P 30 0 0.0035 0.005 40 4.5.5 54 SiAP 30 0 0.0043 0.006 5 9.5 3.6 3 Si460P 30 0 0.0047 0.006 40 36 6.8 48 Si7634BP 30 0 0.0054 0.007 40 45.5.5 48 Si330P 30 0 0.0056 0.0075 35 3. 7.7 Si468P 30 0 0.0057 0.0076 40 9 3.8 50 Si40P 30 0 0.006 0.008 35 8 36 SiA4P 30 0 0.005 0.0085 0 9.4 9.4 5.6 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 9/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si48P 30 0 0.0075 0.0095 30 9.5.7 Si46P 30 0 0.0079 0.0 30 0 8.8 4.7 Si7AP 30 0 0.0085 0.005 4 9.8 9.8 Si47P 30 0 0.0 0.05 b 0 5 6.8 9.8 Si640P 40 0 0.007 0.00 60 75 34.6 04 Si470P 40 0 0.003 0.0065 60 0 45.5 04 Si64P 40 0 0.004 0.0003 60 56 7. 83 Si44P 40 0 0.008 0.003 50 78 38 83 Si46P 40 0 0.0038 0.004 50 59 8. 69 Si48P 40 0 0.005 0.006 40 50 4 39 Si4P 40 0 0.0066 0.008 40 3 6. 34.7 Si46P 40 0 0.005 0.05 30 0.5 9.3 4.7 Si836P 40 0 0.09 0.05.8 5.8 5.6 Si66P 60 0 0.007 0.0035 60 64 30 04 Si764P 60 0 0.0065 60 49.5 04 Si7478P 60 0 0.0075 0.0088 0 05 5.4 Si7460P 60 0 0.0096 0.0 8 65 5.4 Si7850P 60 0 0.0 0.03 0.3 8 4.5 Si774P 75 0 0.007 60 47.5 04 Si86P 80 0 0.0048 0.0065 w 60 60 7.9 04 Si880P 80 0 0.0059 0.0085 w 60 49 3 04 Si880AP 80 0 0.0063 0.0089 w 60 47.5 4 83 Si786P 80 0 0.05 3 46 64 Si785P 80 0 0.065 0.0 d.5 34 5. Si785AP 80 0 0.07 0.0 r 30 30.5 6.5 Si870AP 00 0 0.0066 0.005 w 60 53.5 5. 04 Si804P 00 0 0.007 0.003 60 50.8 4.8 04 Si846AP 00 0 0.0078 0.0095 60 44 6.7 83 Si88AP 00 0 0.0087 0.05 w 60 39.5 9.5 83 Si876AP 00 0 0.008 0.045 w 40 3.8 6.3 6.5 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 0/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si878AP 00 0 0.04 0.08 w 40 7.9 3.9 44.5 Si7456P 00 0 0.03 0.03 w 7.8 9.6 9.7 35.7 Si43P 00 0 0.0306 w 8.4 54 Si7454P 00 0 0.033 0.036 0.047 w.8 6. 9.7 Si698P 00 0 0.95 0.3 d 7.5 5. 3 Si87P 50 0 0.08 w 53.7 4.5 04 Si838P 50 0 0.033 35 33 96 Si7738P 50 0 0.038 30 35 96 Si7430P 50 0 0.045 0.047 r 6 8.5 64 Si7898P 50 0 0.085 0.095 d 4.8 7 5 Si77P 00 0 0.07 0.076 d, q 5 5 34 96 Si7450P 00 0 0.08 0.09 d 5.3 34 5. Si746P 00 0 0.3 0.4 d 4. 0 4.8 Si7464P 00 0 0.4 0.6 d.8 4. Si790P 50 0 0.8 0.4 d, q 8.4 48 3 96 Si7434P 50 0 0.55 0.6 d 3.8 34 5. PowerPAK SO-8L SiJ48P 80 0 0.006 0.0095 60 47 4 69.4 PolarPAK SiE80F 0 0.0035 0.0064 50 95 43 04 SiE8F 0 0 0.0034 0.0055 50 5 4 04 SiE88F 5 0 0.004 0.008 60 96 46 5 SiE878F 5 0 0.005 0.0068 45 4. 5 SiE848F 30 0 0.006 0.00 60 9 43 5 SiE860F 30 0 0.00 0.008 60 70 34 04 SiE86F 30 0 0.003 0.004 50 48 3 04 SiE844F 30 0 0.007 0.0 44.5 9 3. 5 SiE868F 40 0 0.003 0.009 60 95 45 5 SiE83F 40 0 0.0055 0.007 50 5 5 04 SiE876F 60 0 0.006 60 5 5 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V /53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SiE88F 75 0 0.0095 0.05 60 63 33 5 SiE854F 00 0 0.04 60 50 5 SiE804F 50 0 0.038 0.04 d, q 37 70 46 5 SiE836F 00 30 0.3 8.3 7 04 SO-8 Si4838BY 8 0.007 0.003 0.004 34 56 5.7 Si4866BY 8 0.0053 0.006 0.0074.5 5 4.45 Si436Y 0 0 0.00 0.005 46 73 34 7.8 Si486Y 0 0 0.006 0.003 35.8 60 8.7 6 Si44Y 0 6 0.006 0.007 0 6 7.5 5.7 Si4004Y 0 0 0.038 0.09.6 0.6 5 Si4630Y 5 6 0.007 0.003 40 07.5 49 7.8 Si4654Y 5 6 0.004 0.005 8.6 63 9 5.9 Si46Y 5 0.0086 0.0095 0.05 8 37 7.5 5 Si4666Y 5 0.0 0.0 0.04 6.5.4 0.7 5 Si4778Y 5 6 0.03 0.08 8 5.5 5 Si46Y 30 0 0.0075 0.0034 39 70 30 7.8 Si464Y 30 0 0.003 0.0039 30 6 6.5 6 Si466Y 30 0 0.0039 0.0055 30.5 4.5.5 6.5 Si460Y 30 0 0.0049 0.0063 5.4 36 6.8 5.7 Si4634Y 30 0 0.005 0.0067 4.5 45.5.5 5.7 Si468Y 30 0 0.0057 0.0076 4 9 3.8 5.7 Si456Y 30 0 0.006 0.008 4 8 6 Si46Y 30 0 0.0079 0.0 9.3 0 8.8 5 Si4048Y 30 0 0.0085 0.005 9.3 34 5 5.7 Si474Y 30 0 0.0095 0.03 7 8 8 5 Si47Y 30 0 0.0 0.05 b 5 5 6.8 4.5 Si434Y 30 0 0.04 0.075 4 5.4 7.3 5 Si48Y 30 0 0.04 0.03 0.9 8 3.8 5 Si478Y 30 5 0.0 0.033 7.5 3.7 5 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V /53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si454Y 40 0 0.0033 0.0039 36 70 3.5 7.8 Si4Y 40 5 0.0045 0.006 7. 6 9 6 Si44Y 40 0 0.0075 0.009 0.5 5 5.7 Si4840BY 40 0 0.009 0.0 9 33 5 6 Si4446Y 40 0.04 0.045 5. 8 Si4850EY 60 0 0.0 0.03 8.5 8 3.3 Si4436Y 60 0 0.036 0.043 8 0.5 5 Si408Y 75 0 0.0098 0.5 36 7.8 Si40Y 80 0 0.03 7.3 35 7.8 Si4896Y 80 0 0.065 0.0 d 9.5 34 3. Si490AY 00 0 0.0088 0.0 8.4 44.4 0.7 6 Si4090Y 00 0 0.0 0.0 q 9.7 45.6 7.9 7.8 Si4056Y 00 0 0.03 0.03 w. 9.6 9.7 5.7 Si400Y 00 0 0.063 0.084 d, q 6.8 3.5 9 6 Si404Y 00 0 0.05 4.6 8.5 5 Si40Y 00 0 0.58 0.75 d, q 3.8 7. 4.6 4.8 Si447Y 50 0 0.045 0.047 r 7.7 8.5 5.9 Si4488Y 50 0 0.05 5 30 3. Si4848Y 50 0 0.085 0.095 d 3.7 7 3 Si4490Y 00 0 0.08 0.09 d 4 34 3. Si448Y 00 0 0.3 0.4 d 3 0.5 Si4464Y 00 0 0.4 0.6 d..5 Si446Y 00 0 0.48 0.5 d.5 6.5 Si4434Y 50 0 0.55 0.6 d 3 34 3. TSSOP-8 Si6466A 0 8 0.04 0.0 8. 8.5 Si640 30 0 0.04 0.0 7.8.5.5 PowerPAK -8 Si70N 8 0.0038 0.0047 35 4 5 SiS45N 0 0.0035 0.0048 35 7 3.5 5 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 3/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SiS454N 0 0 0.0037 0.0054 35 35 8.5 5 SiS46N 0 0 0.0045 0.0058 35 8 3. 5 Si706N 0 0.006 0.0098 9.5 7.5 3.8 SiS40N 0 0 0.0048 0.0063 35 7 6.7 5. SiS376N 0 0 0.0058 0.0084 35 6.5 7.7 33 SiS44N 0 0 0.0064 0.0089 35 0 9.5 39 SiS438N 0 0 0.0095 0.05 6 5 7.3 7.7 SiS430N 5 0 0.005 0.0069 35 6.5 3 5 SiS436N 5 0 0.005 0.03 6 4.3 6.7 7.7 SiSA04N 30 0 0.005 0.003 40 5.5 5 SiS476N 30 0 0.005 0.0035 40 5.5 5 SiS444N 30 0 0.0033 0.0043 35 68 33.5 5 SiSA0N 30 0 0.0037 0.005 30 34 5.4 39 SiSAN 30 0 0.0043 0.006 5 9.5 3.6 8 SiS456N 30 0 0.005 0.0068 35 36 8.5 5 SiS330N 30 0 0.0056 0.0075 35 3. 5 SiS40N 30 0 0.006 0.008 35 8 5. Si74AN 30 0 0.0075 0.0098 35 0. 39 SiS47AN 30 0 0.0085 0.005 4 9.8 8 SiS33N 30 0 0.0084 0.0 35 8 8. 33 SiSA8N 30 0 0.0075 0.0 38.3 4.3 6.9 9.8 SiS406N 30 5 0.0 0.045 4 8. 8.4 3.7 SiS334N 30 0 0.03 0.046 0.7 5. 50 SiS44N 30 0.06 0.0 0 8. 3 Si776AN 30 0 0.035 0.065 6 5.4 7.3 7.7 SiS478N 30 5 0.0 0.03 7 3.6 5.6 SiS4N 30 0 0.04 0.03 8 3.8 5.6 SiS434N 40 0 0.0076 0.009 35 5.5 5 Si70AN 60 0 0.0 0.03 9.5 30 3.8 Si744N 60 0 0.05 0.036 8.7 6 3.8 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 4/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si7308N 60 0 0.058 0.07 6 3 6 9.8 Si78N 75 0 0.037 0.046 6 6 8 5 SiS468N 80 0 0.095 0.03 30 8. 8.7 5 SiS890N 00 0 0.035 0.035 w 30 9. 9.5 5 SiS89AN 00 0 0.033 0.036 0.047 w 8.8 6. 5 Si73N 00 0 0.058 8 3 5 Si780N 00 0 0.06 0.084 d 5.4 3 3.8 SiS698N 00 0 0.95 0.3 d 6.9 5. 9.8 Si788N 50 0 0.35 0.4 d 3.4 0 3.8 Si780N 00 0 0.4 0.5 d.6. 3.8 Si780N 50 0 0.435 0.445 d.95 4 3.8 TSOP-6 Si3464V 0 8 0.04 0.08 0.03 8 3.6 Si3460V 0 8 0.08 0.03 0.038 7.9 6.7.7 Si344CV 0 0.07 0.03 0.049 8 9. 4.3.7 Si340V 30 0 0.095 0.03 8.8 9. 4. Si344CV 30 0 0.06 0.03 8 8.3 4. 3.6 Si3456V 30 0 0.04 0.05 6.3 6.8.7 Si3438V 40 0 0.0355 0.045 7.4.7 5.3 3.5 Si3458BV 60 0 0. 0.8 4. 7. 3.5 3.3 Si3430V 00 0 0.7 0.85 d.4 5.5 Si3440V 50 0 0.375 0.4 d.5 5.4 SOT-3 Si34S 8 5 0.07 0.0 0.0 0.03 0.075 6 0.5.5 Si3CS 0 8 0.038 0.0356 0.044 6 8.8. Si30CS 0 8 0.057 0.075.9 3.5 0.86 TN000K 0 8 0.4 0.5 0.73.4 0.35 TN00K 0 0.4 0.4 0.35 Si338S 30 0 0.08 0.033 6 8. 4..5 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 5/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si336S 30 8 0.04 0.046 0.05 5. 0 5.7.8 Si366S 30 0 0.036 0.04 5.8 6.4 3.. Si300S 30 0.068 0.085 3.6 6.5 3.7 Si304S 30 0 0.06 0.075 3.6 4.5..7 Si38CS 40 0 0.04 0.05 5.6 5.8.9. Si308BS 60 0 0.56 0.9.3 4.5.3.66 N700K 60 0 4 0.3 0.4 0.35 Si34S 00 0 0.34 0.67 0.78.3 5..9.5 Si38S 00 0 0.5.5 3.3.5 TN404K 40 0 4 4 6 0. 4.87 0.36 PowerPAK ChipFET Si5456U 0 0 0.0 0.035 0 9.8 3 Si5486U 0 8 0.05 0.07 0.0 3 Si548U 30 0 0.045 0.085 0 9.5 3 Si5458U 30 0 0.04 0.05 6 6.8 0.4 Si540U 40 0 0.08 0.0 0 3 Si5476U 60 0 0.034 0.04 0.5 3 06-8 ChipFET Si5406CC 8 0.0 0.03 0.07 6.5 5.7 Si543C 0 0.0 0.05 6 0 6.3 Si5440C 30 0 0.09 0.04 6 9 9 6.3 Si544C 30 5 0.04 0.03 6 9 Si5468C 30 0 0.08 0.034 6 8 3.8 5.7 Si540BC 30 0 0.035 0.04 6.7 0.5 SC70-6 Si44H 8 0.0 0.04 0.03 4 3..8 Si4H 8 0.06 0.03 0.036 4 7.5.8 Si44EH 0 8 0.033 0.038 0.045 0.07 4 6.8 Si406H 0 8 0.065 0.075 0.096 3.9 4.9.56 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 6/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si40EH 0 0.07 0.08 0. 3.7 5.6.56 Si400L 0 0.5 0.35.7. 0.65 Si300BL 0 8 0.85.08 0.4 0.56 0. Si44H 30 8 0.046 0.05 0.057 4 0 5.7.8 Si48EH 30 0.045 0.049 0.06 4 8.8 4.8 Si46EH 30 0.058 0.064 0.077 3.9 7.5 3.5.8 Si470H 30 0.066 0.095.8 4.85.8 Si46H 30 0 0.075 0.5 3.6.9.6 Si308EL 30 0.3 0.44 0.85.4.7.4 0.5 Si30L 30 0 0.48 0.7 0.64 0.86 0.3 Si330EL 60 0.5 3 8 e 0.5 0.4 0.3 PowerPAK SC-70 SiA436J 8 5 0.0094 0.005 0.05 0.08 0.036 5 9 SiA406J 8 0.098 0.0 0.064 4.5 3.7 9 SiA448J 0 8 0.05 0.066 0.0 0.034 3 9. SiA430J 0 0 0.035 0.085 5.3 9. SiA46J 0 0.036 0.063 0.036 4.5 7.5 7.9 9 SiA400EJ 30 0.09 0.05 4.6 9. SiA444JT* 30 0 0.07 0.0 0 5 9 SiA43J 30 0 0.0 0.04 3 5.6 9. SiA408J 30 0.036 0.039 0.053 4.5 6 7 7.9 SiA456J 00 6.38.5 3.5.6 9.5 5 9 SiA450J 40 0.9.95 3.5.5 4.69.54 5 SC-75A Si0C 0 8 0.396 0.456 0.546. 0.63 0.75 0.4 Si03 0 6 5 7 9 0.4 0.75 0. Si0 60 0.5 3 0.33 0.5 * Thin a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 7/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g PowerPAK SC-75 SiB404K 5 0.09 0.0 0.06 0.065 9 9.6 3 SiB488K 8 0.0 0.04 0.09 9 7.5 3 SiB4EK 0 8 0.03 0.04 0.057 0.08 9 6 3 SiB406EK 0 0.046 0.063 6 7.5 3.5 0 SiB40K 30 8 0.04 0.046 0.05 9 0 5.7 3 SiB408K 30 0 0.04 0.05 7 6..9 3 SiB456K 00 0 0.85 0.3 6.3 3.3.8 3 SiB45K 90 6.4.6 6.5 4.3.3 3 SC-89 Si050X 8 5 0.086 0.093 0.0 0..34 7. 0.36 Si056X 0 8 0.089 0.098 0..3 5. 0.36 Si058X 0 0.09 0.4.3 3.5 0.36 Si0X 0 6 0.7 0.85.5 0.5 0.75 0.5 Si03X 0 6 5 7 9 0.4 0.75 0. Si070X 30 0.099 0.4. 3.5 0.36 Si07X 30 0 0.093 0.9.3 5.5.7 0.36 MICO FOOT Power MICO FOOT Si800B 5 0 0.008 0.04 9.5 0.5.9 MICO FOOT.6 x.6 Si844B 8 5 0.03 0.033 0.035 0.043 0.077. 0 6.5 Si840B 0 8 0.037 0.039 0.043 7.3 7.77 MICO FOOT.5 x Si846B 8 5 0.03 0.05 0.03 0.04 0.095 6 7 3 Si8406B 0 8 0.033 0.037 0.04 6 7.5 3 MICO FOOT x Si847B 0 8 0.044 0.05 0.056 0.07 4.5 6.8.8 8/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g MICO FOOT 0.8 x 0.8 Si880B 8 5 0.054 0.06 0.068 0.086 0.35 3.5 4.3 0.9 Si8806B 8 0.043 0.05 0.065 3.9 6.5 0.9 Si88B 0 8 0.059 0.06 0.065 0.085 f 3. 6.3 0.9 Si8800EB 0 8 0.08 0.09 0.05 0.5.8 3. 0.9 9/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g ual N-Channel PowerPAK SO-8 Si734P 0.0034 0.005 60 80 37 46 Si736P 0 0.005 0.007 60 68 3 46 Si7994P 30 0 0.0056 0.007 60 5 4 46 Si77P 30 0 0.0093 0.04 5 7 8. Si770P 30 0 0.0 0.05 8 4 6.6 7.8 Si7938P 40 0 0.0058 0.007 60 43 46 Si788P 40 0 0.09 0.0 0 0 4.9 5.6 Si7960P 60 0 0.0 0.05 9.7 49 3.5 Si794P 00 0 0.049 0.06 d 5.9 6 3.5 Si7956P 50 0 0.05 0.5 d 4. 7 3.5 Si7946P 50 0 0.5 0.68 d 3.3.6 3.5 SO-8 Si404Y 0 0 0.0046 0.006 9.8 30 4.5 3.5 Si996CY 0 0.08 0.0 8 0 3. Si48Y 5 0.08 0.0 0.04 8 6.5 7.8 3. Si400Y 5 6 0.05 0.03 8 7.6 3.6.8 Si40Y 30 0 0.04 0.07.. 5.4 3.7 Si44Y 30 0 0.095 0.03 8.5 4.5 7. 3. Si40Y 30 0 0.0355 0.044 6.5 8 3.7.7 Si4936CY 30 0 0.04 0.05 5.8 6.8.3 Si4904Y 40 6 0.06 0.09 8 56 6 3.5 Si488Y 40 0 0.0 0.03 9. 0 4.9 3. Si486Y 40 0 0.035 0.04 7 6.8 3.3.9 Si4946BEY 60 0 0.04 0.05 b 6.5 7 9. 3.7 Si9945BY 60 0 0.058 0.07 5.3 3 6 3. TSSOP-8 Si696A 0 8 0.03 0.033 0.035 0.043 e 4.5 7.5 Si695A 0 0.045 0.055 0.065 e 3.9 4.3 30/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si698 30 0 0.035 0.05 4 9 Si6954A 30 0 0.053 0.075 3.4 8 PowerPAK -8 Si73N 0 8 0.064 0.0 0.04 5 3 Si7904BN 0 8 0.03 0.036 0.045 6 9 7.8 Si78N 30 0 0.0 0.05 6 8.5 4. 3 Si7N 30 0.036 0.039 6.8 7.6 Si76N 40 0 0.03 0.039 6.5 5.5 0.8 Si7N 40 0.04 0.047 6 9 8 7.8 Si70N 60 0 0.06 0.075 4.8 3.6 SiS90N 75 0 0.86 0.8 4 3.9. 5.4 Si79N 00 0 0.95 0.3 d.5 5..6 TSOP-6 Si3900V 0 0.5 0..4..5 Si393V 30 0 0.058 0.073 3.7 3.7.8.4 PowerPAK ChipFET Si5906U 30 0 0.03 0.04 6 5.7.9 0.4 Si5944U 40 0 0. 0.7 6 4.4. 0 Si5980U 00 0 0.567.5. 7.8 06-8 ChipFET Si5908C 0 8 0.04 0.045 0.05 5.9 5. Si5904C 0 0.075 0.34 4. 4. Si590BC 30 0 0.065 0. 4 4.5 3. SC70-6 Si9EH 0 8 0.98 0.5 0.63.3 0.9.5 Si958H 0 0.05 0.34.3.5..5 Si90CL 0 0.35 0.306. 0.9 0.4 Si97H 30 0 0.9 0.344.3 0.9.5 Si96L 60 0.4 3 0.37 0.9 0.5 0.5 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 3/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g PowerPAK SC-70 SiA90J 8 5 0.07 0.03 0.036 0.047 0. 4.5 4.8 7.8 SiA90EJ 8 0.08 0.033 0.04 4.5 6. 7.8 SiA906EJ 0 0.046 0.063 4.5 7.5 3.5 7.8 PowerPAK SC-75 SiB94K 8 5 0.3 0.38 0.9 0.8 0.48.5.5 3. SiB9K 0 8 0.6 0.68 0.375.5. 3. SC89-6 Si034CX 0 8 0.396 0.456 0.546 0.76 0.6 0.75 0. Si08X 30 0 0.65 0.744 0.48 0.5 0. Si06X 60 0.4 3 0.33 0.6 0.5 3/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g Single P-Channel TO47 IFP940-00 0. - 40.7 80 IFP940-00 0.5-9.3 50 FULLPAK0 IFI9Z34G - 60 0.4-3.3 4 IFI9Z4G - 60 0.8-8.5.7 37 IFI9Z4G - 60 0.5-5.3 8 7 IFI9540G - 00 0. - 3 40.7 4 IFI9530G - 00 0.3-7.7 5.3 38 IFI950G - 00 0.6-5. 37 IFI9640G - 00 0.5-6. 9.3 40 IFI9630G - 00 0.8-4.3 9.3 40 IFI960G - 00.5-3 0 30 IFI960G - 00 3-8.7 7 IFI9634G - 50-4. 5.3 35 TO-0 SUP75P03-07 - 30 0 0.007 0.0 75 60 87 SUP65P04-5 - 40 0 0.05 0.03 65 85 0 SUP90P06-09L - 60 0 0.0093 0.08 90 60 50 SUP53P06-0 - 60 0 0.095 0.05 53 76 38 04. IF9Z34-60 0.4-8.7 88 IF9Z4-60 0.8 -.7 60 IF9Z4-60 0.5-6.7 8 43 SUP40P0-43 - 00 0 0.043 0.048 36 06 54 5 IF9540-00 0. - 9 40.7 50 IF9530-00 0.3 0 5.3 88 IF950-00 0.6-6.8 60 IF950-00. - 4 5.8 43 IF9640-00 0.5-9.3 5 33/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF9630-00 0.8-6.5 9.3 74 IF960-00.5 -.5 4.7 40 IF960-00 3 -.8 7.3 0 PAK (TO-63) SUM0P04-05 - 40 0 0.005 0 85 375 SUM0P06-08L - 60 0 0.008 0.005 0 60 7 SUM55P06-9L - 60 0 0.09 0.05 55 76 5 IF9Z34S - 60 0.4-8.7 88 IF9Z4S - 60 0.8 -.7 60 IF9Z4L - 60 0.5-6.7 8 43 IF9Z4S - 60 0.5-6.7 8 43 SUM0P08-L - 80 0 0.0 0.045 0 80 85 375 SUM90P0-9L - 00 0 0.09 0.0 90 7 97 375 SUM50P0-4 - 00 0 0.04 0.047 36 06 54 5 IF9540S - 00 0. - 9 40.7 50 IF9530S - 00 0.3 -.5 88 IF950S - 00 0.6-6.8 8 60 IF950S - 00. - 4 5.8 43 IF9640L - 00 0.5-9.3 5 IF9640S - 00 0.5-9.3 5 IF9630S - 00 0.8-6.5 9.3 74 IF960S - 00.5 -.5 4.7 40 IF960S - 00 3 -.8 7.3 0 IPAK / TO-5 IFU900-50 0.8 9.9 9.4 4 IFU900-50 0.5 5.3 6. 5 IFU904-60 0.8 8.8 9 4 IFU904-60 0.5 5. 5 SUU0P0-95 - 00 0 0.95 0.07 8.8 3.5 3. IFU90-00 0.6 5.6 8 4 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 34/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFU90-00. 3. 8.7 5 IFU90-00.5 3.6 0 4 IFU90-00 3.9 8.9 5 IFU94-50 3.7 4 50 IFU930-400 7.8 3 50 PAK (TO-5) SU45P03-09 - 30 0 0.0087 0.05 45 60 4.7 SU50P04-08 - 40 0 0.008 0.07 50 06 60 73.5 SU45P04-6P - 40 0 0.06 0.03 36 67 4.7 IF900-50 0.8-9.9 0 IF900-50 0.5 5.3 6. 5 SU50P06-5 - 60 0 0.05 0.0 50 0 3 SU9P06-60 - 60 0 0.06 0.077 8.3 6 38.5 SU08P06-55L - 60 0 0.55 0.8 8.4.5 5 IF904-60 0.8-8.8.7 4 IF904-60 0.5-5. 8 5 SU50P08-5L - 80 0 0.05 0.09 50 05 55 36 SU50P0-43L - 00 0 0.043 0.048 37. 06 54 36 SU09P0-95 - 00 0 0.95 0. 8.8 3..7 3. IF90-00 0.6-5.6 4 IF90-00. - 3. 5.8 5 IF90-00.5-3.6 3.3 4 IF90-00 3 -.9 5.9 5 IF94-50 3 -.7 9.3 50 IF930-400 7 -.8 8.7 50 HVMIP IF900-50 0.8 -.6 0 IF900-50 0.5. 7. IF904-60 0.8 -.6.7.3 IF904-60 0.5 -. 8.3 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 35/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF90-00 0.6 -.3 IF90-00. - 0.7 5.8.3 IF90-00.5-0.56 0.3 IF90-00 3-0.4 5.9.3 SOT3 IFL904-60 0.5 0 8 IFL90-00. 0 5.8 PowerPAK SO-8 Si737P - 0 0.0095 0.005 0.0039 60 390 88 04 Si74P - 0 0 0.009 0.003 60 65 8 04 Si40P - 0 0.003 0.004 0.0077 50 05 97 39 Si7633P - 0 0 0.0033 0.0055 60 73 85 04 Si7635P - 0 6 0.0049 0.0075 40 95.3 46.5 54 Si745P - 30 0 0.006 0.00375 60 75 9 04 Si735P - 30 0 0.0039 0.006 60 67 78 04 Si739P - 30 0 0.0055 0.009 40 97 49.5 48 Si749P - 30 5 0.005 0.0094 50 98 5 69 Si743P - 30 0 0.0 0.086 35 47.5 4.6 35.7 Si7463AP - 40 0 0.0 0.035 46 96 48.6 39 Si746P - 60 0 0.045 0.09 4.4 5.4 Si7465P - 60 0 0.064 0.08 5 6 3.5 Si7469P - 80 0 0.05 0.09 8 05 55 83 Si7489P - 00 0 0.04 0.047 8 06 54 83 Si7439P - 50 0 0.09 0.095 d 5. 88 5.4 Si743P - 00 0 0.74 0.8 d 3.8 88 5.4 SO-8 Si4465AY - 8 8 0.009 0.0 0.06 3.7 55 3 Si4477Y - 0 0.006 0.005 6.6 5 59 6.6 Si4463CY - 0 0.008 0.0 0.04 8.6 08 54 5 Si4403CY - 0 8 0.055 0.095 0.05 3.4 36.5 5 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 36/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si9434BY - 0 8 0.04 0.055 6.3.5 Si9433BY - 0 0.04 0.06 h 6. 8.8.5 Si4497Y - 30 0 0.0033 0.0046 36 90 90 7.8 Si4459AY - 30 0 0.005 0.00775 9 9 6 7.8 Si449EY - 30 5 0.0065 0.008 0.0 b 5.8 0 66 6.9 Si4483AY - 30 5 0.0088 0.053 9. 90 44.8 5.9 Si445Y - 30 0 0.0098 0.065 9.7 53 7 5.7 Si485Y - 30 5 0.05 0.005 4.9 57 9.5 5 Si4835Y - 30 5 0.08 0.03 3 43 5.6 Si4435Y - 30 0 0.04 0.035.4 3 5 5 Si4487Y - 30 5 0.005 0.0375.6 4.4 5 Si443CY - 30 0 0.03 0.049 9 5 3 4. Si4485Y - 30 0 0.04 0.07 6 3.6 7 5 Si440Y - 40 0 0.05 0.0 6. 64 33 6.3 Si4447AY - 40 0 0.045 0.06 7. 5.8 4. Si9407BY - 60 0 0. 0.5 4.7 4.5 8 5 Si4455Y - 50 0 0.95 0.35 d, q.8 7.5 3. 5.9 Si4409Y - 50 0..3 d.3 7.7 4.8 4.6 TSSOP-8 Si643-8 0.0085 0.006 0.04 b 9.5 74.5 Si6467B - 8 0.05 0.055 0.0 8 46.5 Si6433B - 8 0.04 0.07 4.8 0.5 Si6463B - 0 8 0.05 0.0 0.07 7.4 40.5 Si645-30 0 0.09 0.03 6.5 47.5 Si6435A - 30 0 0.03 0.055 5.5 5.5 PowerPAK -8 and PowerPAK -8S Si7405BN - 8 0.03 0.07 0.04 6 46 33 Si7655N* - 0 0.0036 0.0048 0.0085 40 50 7 57 Si765AN - 0 0.0044 0.006 0.0098 35 59 5 * PowerPAK -8S a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 37/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si769N - 0 0.0046 0.006 0.07 35 8 59 5 SiS407N - 0 8 0.0095 0.038 0.095 5 38 33 Si763N - 0 6 0.0087 0.04 35 58 8. 5. Si7403BN - 0 8 0.074 0. 8 5.6 9.6 Si765N - 30 0 0.007 0.0 35 84.5 39.5 5 Si79N - 30 0 0.04 0.0 35 47.5 4.6 5. Si767N - 30 5 0.03 0.0 35 39 0.5 5 Si7N - 30 5 0.08 0.0305 6 43 5 Si769N - 30 0 0.0 0.034 4 3 5 7.8 Si76N - 40 0 0.05 0.033 8 4 39 Si745N - 60 0 0.065 0. 5.7 5 3.8 Si7309N - 60 0 0.5 0.46 8 4.5 7.5 9.8 Si73N - 00 0 0.3 0.45 3. 35 6.5 5 Si75N - 50 0 0.95 0.35 d 8.9 7.5 3. 5 Si77N - 50 0..3 d.7 7.7.5 Si79N - 00 0.05. d 3.8 6. 0.6 5 TSOP-6 Si3499V - 8 5 0.03 0.09 0.036 0.045 7 8 Si3477V - 0 0.075 0.03 0.033 8 58 8.3 4. Si3473CV - 8 0.0 0.08 0.036 8 6 4. Si3447CV - 8 0.036 0.05 0.068 7.8 3 Si3407V - 0 0.04 0.037 8 4 4. Si3493BV - 0 8 0.075 0.034 0.045 8 6..97 Si3433CV - 0 8 0.038 0.046 0.06 6 8 3.3 Si3443CV - 0 0.06 0. 5.97 7.53 3. Si3483CV - 30 0 0.034 0.053 8.5 4. Si3457CV - 30 0 0.074 0.3 5. 0 5. 3 Si3453V - 30 0 0.65 0.76 3.4 4.5.4 3 Si3459BV - 60 0 0.6 0.88.9 7.7 4.4 3.3 Si3437V - 50 0 0.75 0.79 d.4. 8 3. a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 38/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si3475V - 00 0.6.65 d 0.95.7 7.8 3. SOT-3 Si39S - 8 5 0.03 0.036 0.048 0.068 0. 6 9.3.5 Si305CS - 8 8 0.035 0.048 0.065 5.8.7 Si333S - 8 0.08 0.04 0.063 0.5 6 4.7 Si33CS - 0 8 0.039 0.05 0.063 6 6.5 Si399S - 0 0.034 0.045 0.067 6 0.5 Si377ES - 0 8 0.06 0.08 0. 0.65 4.4 7.6.8 Si367S - 0 8 0.066 0.086 0.3 3.8 9.7 Si30CS - 0 8 0. 0.4 3. 5.5.6 TP00K - 0 8 0.65 0.85 0.58.4 0.35 Si343CS - 30 0 0.045 0.075 5.9 3.6 7.5 Si307CS - 30 0 0.088 0.38 3.5 4..8 Si303CS - 30 0 0.9 0.33.7 4.3 TP00K - 30 0.4 3.5 0.385 0.35 Si39CS - 40 0 0.077 0.08 4.4 3.6 7.5 Si309CS - 60 0 0.345 0.45.6.7.7 TP060K - 60 0 5 0 0.4. 0.5 Si337S - 80 0 0.7 0.303 d, q. 7.5 Si35S - 50 0..3 d 0.69 7.7.5 Si37S - 00 0.35.45 d 0.49 8.5 PowerPAK ChipFET Si5459U - 0 0.05 0.08 8 7 8 0.9 Si549U - 30 0 0.05 0.0 4 0 3 Si549U - 30 0 0.0 0.033 30 5.5 3 06-8 ChipFET Si5475C - 8 0.03 0.04 0.05 6 0 5.7 Si547C - 0 0.0 0.08 0.06 6 64 30 6.3 Si5457C - 0 0.036 0.056 6 5.5 5.7 Si5403C - 30 0 0.03 0.044 6 8 5 6.3 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 39/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si5435BC - 30 0 0.045 0.08 5.9 6.5 SC-70 Si489EH - 8 5 0.048 0.059 0.073 0.097 0.9 0.5.8 Si405BH - 8 8 0. 0.6 0..6 3.67.7 Si35L - 8 8 0.336 0.45 0.65 0.9.7 0.4 Si40EH - 0 0.034 0.046 0.07 0. 4 4..8 Si47EH - 0.085 0.5 0.6 3.3 5.8.56 Si307EL - 8 0.9 0.435 0.58 0.9 3. 0.34 Si44EH - 0 0 0.04 0.054 0. 4.5.8 Si47EH - 0 8 0.064 0.085 0. 0.65 7.6.8 Si467H - 0 8 0.09 0.5 0.5.6 9.78 Si469H - 0 0.08 0. 0.55.6 5.5.78 Si43EH - 0 0.5 0.55 0..9 5.6.56 Si403CL - 0 0.4 0.6 0. x. 4 0.9 Si37L - 0 8 0.5 0.9 0.7.4 4.3 0.5 Si303L - 0 0.43 0.48 0.7 0.7.7 0.34 Si443EH - 30 0.054 0.06 0.085 4 8.5 8.6.8 Si47H - 30 0. 0. 0.75.6 6.5.78 Si473H - 30 0 0. 0.45.6 4..78 Si4H - 50 0.6.7 d 0.5 4..56 Si49H - 00 0 5 5. d 0.38 4..56 PowerPAK SC-70 SiA47J - 8 5 0.06 0.05 0.06 0.03 0.095 30 9 SiA447J - 8 0.035 0.094 0.0344 0.07 3 9 SiA43J - 8 0.09 0.034 0.044 0. 3 9 SiA445EJ - 0 0.065 0.03 48 3 9 SIA433EJ - 0 0.08 0.06 0.065 0 9 SiA49JT* - 0 8 0.005 0.07 0.036 0.06 4.5 9 SiA43J - 0 8 0.05 0.03 0.04 0.07 4 9 * Thin a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 40/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SiA49J - 0 5 0.03 0.039 0.05 0.066 0.3 7.5 9 SiA46J - 0 8 0.033 0.04 0.05 8 7.9 SiA45J - 0 0.035 0.05 3 5 9 SiA45EJ - 0 0.06 0.065 0.08 0. x 4.5 5.6 SiA4J - 30 0 0.035 0.056 9 0 9 SiA44J - 40 0 0.047 0.065 9 SC75A Si03-0 6 8 5 0.4.5 0.5 Si0-60 0 5 0 a 0.7.7 0.5 PowerPAK SC-75 SiB437EKT* - 8 5 0.034 0.063 0.084 0.8 9 0.5 3 SiB455EK - 0 0.07 0.039 0.069 0.65 9.3 3 SiB457EK - 0 8 0.035 0.049 0.079 0.57 9 3 3 SiB433EK - 0 8 0.058 0.077 0.05 9 7.6 3 SiB45K - 30 0 0.087 0.58 9 6.7 3.5 3 SC89 Si067X - 0 8 0.5 0.66 0.4.06 6 0.36 Si069X - 0 0.84 0.68 0.94 4.3 0.36 Si03CX - 0 8 0.76.04.5 0.45.65 0.9 Si07X - 30 0.67 0.88 0.44 0.96 8.87 4.43 0.36 Si073X - 30 0 0.73 0.43 0.98 6.3 3.5 0.36 MICO FOOT MICO FOOT.4 x.6 Si8407B - 0 8 0.07 0.03 0.045 8. 3.9 MICO FOOT.6 x.6 Si8439B - 8 5 0.05 0.03 0.037 0.06 0.5 9. 33.7 Si845B - 8 0.037 0.046 0.06 7.3 9.77 Si8473EB - 0 0.04 0.055 7..7 Si843B - 0 0.048 0.063 6.5 4.77 * Thin a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 4/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si8487B - 30 0.03 0.035 0.045 7.7 5 5.7 Si8409B - 30 0.046 0.065 6.3 7.77 MICO FOOT.5 x Si8483B - 0 0.06 0.035 0.055 0.09 6 43 3 Si8499B - 0 0.03 0.046 0. 6 4.5 3 Si8497B - 30 0.053 0.07 3 3.6 6.3 3 MICO FOOT x Si8469B - 8 5 0.064 0.076 0.5 0.8 4.6.8 Si8467B - 0 0.073 0.5 3.7 4 6.9.8 Si846B - 0 8 0. 0.8 0.4 0.05 3.7 9.5.8 MICO FOOT 0.8 x 0.8 Si8805EB - 8 5 0.068 0.088 0.55 0.9 3. 6.7 0.9 Si8809EB - 0 8 0.09 0.9 0.55.6 6 0.9 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 4/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g ual P-Channel PowerPAK SO-8 Si7997P - 30 0 0.0055 0.0078 60 06 5 46 Si7945P - 30 0 0.0 0.03 0.9 49 3.5 Si7949P - 60 0 0.064 0.08 5 6 3.5 SO-8 Si493Y - 8 0.08 0.0 0.08 8.9 34.5 Si9934BY - 8 0.035 0.056 6.4 3 Si493Y - 0 8 0.05 0.09 0.04 9.4 43 Si4943CY - 0 0 0.09 0.033 8 4 0 3. Si9933CY - 0 0.058 0.094 4 7 8 3. Si495Y - 30 0 0.09 0.04 8 3 5 5 Si4953AY - 30 0 0.053 0.09 4.9 5 Si4909Y - 40 0 0.07 0.034 8 4.5.7 3. Si4948BEY - 60 0 0. 0.5 3. 4.5.4 TSSOP-8 Si693-8 0.0 0.08 0.037 5.8 8.5.4 Si6943B - 8 0.08 0.05.5 5.7. Si698-0 8 0.03 0.04 0.058 4.8 5.4 Si6963B - 0 0.045 0.08 3.9 8.6.3 Si6993-30 0 0.03 0.048 4.7 3.4 PowerPAK -8 Si793N - 0 8 0.037 0.048 0.066 7.4 5.3.8 Si79N - 0 8 0.05 0.067 0.094 5.7 9.5.5 Si793N - 30 0 0.047 0.075 6.4 4.8 Si7905N - 40 0 0.06 0.080 0.8 TSOP-6 Si398V - 0 8 0.85 0.6 0.385.9 3..08 Si3993CV - 30 0 0. 0.88.9 5..7.4 43/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g PowerPAK ChipFET Si5999EU - 0 0.059 0.096 6 3. 6.9 0.4 Si5997U - 30 0 0.054 0.088 6 9.5 4.8 0.4 06-8 ChipFET Si5935CC - 0 8 0. 0. 0.56 4 6. 3. Si5933CC - 0 8 0.44 0.8 0. 3.7 4..8 SC70-6 Si97EH - 0.37 0.575 0.8.5.3 0.73 Si965H - 8 0.39 0.535 0.7.3.7.5 Si967H - 0 8 0.49 0.64 0.79.3.6.5 Si903L - 0 0.995.9.8 0.44. 0.3 PowerPAK SC-70 SiA975J - 8 0.04 0.06 0. 4.5 0.5 7.8 SiA93AJ - 8 0.06 0.08 0.5 4.5 8. 6.5 SiA93EJ - 0 8 0.054 0.07 0.04 0.65 4.5 9.5 7.8 SiA907EJT* - 0 0.057 0.095 4.5 5 7. 7.8 SiA9EJ - 0 0.059 0.098 4.5 5 7. 7.8 SiA9AJ - 0 8 0.6 0.55 0.05 4.5 4.9 6.5 SiA99J - 30 0.064 0.078 0. 4.5 4 6.6 7.8 SiA95J - 30 0 0.087 0.45 4.5 6 3. 6.5 PowerPAK SC-75 SiB9K - 0 8 0.95 0.4 0.56.6.6 3. SC89-6 Si03CX - 0 8 0.756.038.44.4 0.45.65 0. Si05X - 60 0 4 8 a 0..7 0.8 * Thin 44/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V Single Plus Integrated iode PowerPAK SC-70 SiA850J 90 6. 0.5 3.8 4. 7 0.95 3.4 7 Single Plus Integrated Schottky (SkyFET ) PowerPAK SO-8 Si779P 30 0 0.00 0.006 60 90 4 04 Si798P 30 0 0.0005 0.003 60 86 4.6 83 Si774P 30 0 0.006 0.0034 40 58 8.5 6.5 Si7794P 30 0 0.0034 0.004 60 48 3 48 Si788P 30 0 0.0034 0.0043 60 50 4 48 Si7774P 30 0 0.0038 0.0047 60 44.5 48 Si7748P 30 0 0.0048 0.0066 50 6 7.8 56 Si777P 30 0 0.03 0.065 35.6 8.5 8.3 9.8 PolarPAK SiE76F 30 0 0.004 0.0033 60 05 50 5 SO-8 Si483Y - 0 0.56 0.08 0.75 4. 8 4.8 Si4833BY - 30 0 0.068 0. 4.6 9 4.6.75 Si468Y 30 0 0.003 0.0038 38 58 7.5 7.8 Si475Y 30 0 0.0055 0.0076 5 8.5 3.8 6.5 Si4774Y 30 0 0.0095 0.0 6 0.3 9.5 5 Si47Y 30 0 0.03 0.065 4.6 8.5 8.3 5 Si474Y 30 0 0.035 0.075 3.6 6.3 7.3 4.5 Si4776Y 30 0 0.06 0.0.9.6 5.5 4. Si460Y 30 0 0.47 3 0.035 0.05 7.5 8.6 4. 3. PowerPAK -8 SiS778N 30 0 0.005 0.006 35 7.5 3.3 5 SiS78N 30 0 0.0095 0.0 6 0.3 9.5 4 SiS780N 30 0 0.035 0.075 8 6.3 7.3 7.7 45/53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V Si7703EN - 0 0.048 0.068 0.09 6.3.8 TSOP-6 Si3805V - 0 0.5 0.084 0.08 0.75 3.3 8 4.4 06-8 ChipFET Si5853C - 0 8 0.46 0.5 0.05 0.43 0.88 4 4.7 3. Si593C - 0 0.5 0.084 0.08 0.75 4 8 4 3. Si5855CC - 0 8 0.375 0.44 0.8 0. 3.7 4.5 4..8 PowerPAK SC-70 SiA8AJ -0 8 0.45 0.6 0.55 0.05 4.5 4.9 6.5 SiA84J 30 0.56 0.06 0.07 0. 4.5 7 3. 6.5 Asymmetric ual PowerPAK SO-8 Si7998P 30 0 0.0093 0.04 5 7 8. 30 0 0.0053 0.007 30 3 5.3 40 PowerPAI 6 x 5 SiZ96T 30 0 0.0064 0.0 6 7 7..7 30 0 0.003 0.0075 40 06 45 00 SiZ90T 30 0 0.0058 0.0075 40 6.5 48 30 0 0.003 0.0035 40 60 9 00 SiZ90T 30 0 0.007 0.0089 40.3 0.5 39 30 0 0.003 0.0035 40 60 9 00 SiZ98T 30 0 0.0 0.045 6 4 6.8 9 30 0 0.0037 0.0045 8 4 6.8 00 SiZ900T 30 0 0.007 0.009 4 9 3.5 48 30 0 0.0039 0.0047 8 73 34 00 SiZ90T 30 0 0.0 0.045 6 4 6.8 9 30 0 0.0064 0.0083 6 43 66 SiZ904T 30 0 0.04 0.03 8 3.8 0 30 0 0.035 0.07 6 5.4 7.3 33 46/53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V SO-8 Si476Y 30 0 0.053 0.084 8 7. 8.4 3.6 30 0 0.08 0.034 8 7.3 3.6.8 PowerPAI 6 x 3.7 SiZ70T 0 0 0.0068 0.009 6.5 6.9 7 0 0 0.0033 0.0043 35 38 8. 48 SiZ78T 5 0 0.0077 0.0 6 7 8. 7 5 0 0.0035 0.0048 35 4.5 0.5 48 SiZ730T 30 0 0.0093 0.03 6 5.6 7.7 7 30 0 0.0039 0.0053 35 43. 48 SiZ70T 30 0 0.0 0.045 6 4 6.8 7 30 0 0.0 0.045 6 4 6.8 30 SiZ704T 30 0 0.04 0.03 8 3.8 0 30 0 0.035 0.07 6 5.4 7.3 30 PowerPAK -8 Si74N 30 6 0.035 0.04 6 9.5 4.5 7.8 30 0 0.08 0.035 6 5.5 3 PowerPAI 3 x 3 SiZ300T 30 0 0.04 0.03 7.4 3.5 6.7 30 0 0.0 0.065 8 4. 6.8 3 Asymmetric ual Plus Schottky PowerPAK SO-8 Si7980P 0 6 0.0 0.05 8 7.5 8 9.8 0 6 0.05 0.09 8.5 0.3.9 Si770P 30 0 0.0 0.05 8 4 6.6 7.8 30 0 0.5 0.0 0.05 8 4 6.6 7.8 47/53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V SO-8 Si4670Y 5 6 0.03 0.08 8 5.5.8 5 6 0.43 0.03 0.08 8 5.5.8 Si468Y 30 6 0.07 0.095 8 9.5.98 30 6 0.0 0.05 5. 39 7 4.6 Si486BY 30 0 0.085 0.05 b, k 6.8 7.8.4 30 0 0.5 0.05 0.06 b, k.4.6.4 Si496Y 30 0 0.08 0.03 0 6.6 3.3 30 0 0.5 0.08 0.0 0.5 8.9 3.5 Si4830CY 30 0 0.5 0.0 0.05 8 6.5 7.3.9 30 0 0.0 0.05 8 6.5 7.3.9 Si494BY 30 0 0.0 0.07 8.4 6.7.7 30 0 0.0 0.05 8 7 3. PowerPAI 6 x 3.7 SiZ790T 30 0 0.0093 0.03 6 5.6 7.7 7 30 0 0.0047 0.0059 35 36 7 48 Level Shift TSOP-6 Si3865V - 0.054 0.077 0.06 0.65.8 Si386BV - 0 8 0.075 0.45.3 0.83 SC70-6 Si869H -0 8 0.65 0. 0.303. SC89-6 Si040X - 8 0.65 0.89.5 0.43 0.74 Common rain TSSOP-8 Si6968BE 0 0.0 0.03 6.5.5 Si694AE 8 4 0.033 0.038 0.04 e 4.6 6.5.3 48/53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V PowerPAK -8 Si7900AEN 0 0.06 0.03 0.036 8.5 0.5 3. MICO FOOT.4 x.6 Si890EB 0 0.05 0.04 0.085 0.036 c, f 5.7 Si890EB - 0 0.03 0.04 0.055 c 4.4.7 49/53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V N & P Pair PowerPAK SO-8 Si7540P 8 0.07 0.05.8.5 3.5-8 0.03 0.053 8.9 3 3.5 SO-8 Si450BY 30 0 0.07 0.0 6.5 7.9 4.5-8 8 0.07 0.037 8 6.5 3. Si45Y 0 6 0.045 0.07 9.6.5-0 0.033 0.05 6. 7 Si4500BY 0 0.0 0.03 9..5-0 0.06 0. 5.3 6.5 Si453CY 30 0 0.047 0.065 6 6.75.78-30 0 0.089 0.4 4.3 7.8 4..78 Si4564Y 40 6 0.075 0.0 0 0.5 9.8 3. - 40 0 0.0 0.08 9. 4.5.7 3. Si4554Y 40 0 0.04 0.07 8 3.3 6.5 3. - 40 0 0.07 0.034 8 4.5.7 3. Si4599Y 40 0 0.0355 0.045 6.8.7 5.3 3-40 0 0.045 0.06 5.8 5.8 3. Si4559AY 60 0 0.058 0.07 5.3 3 6 3. - 60 0 0. 0.5 3.9 4.5 8 3.4 TSSOP-8 Si656C 0 0.0 0.036 6.7 5 6.7.6-0 0.03 0.045 6. 34 7.7 Si6544B 30 0 0.03 0.046 4.3 9.5.4-30 0 0.043 0.073 3.8 6.4 50/53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V TSOP-6 Si3585CV 0 0.058 0.078 3.9.6.4-0 0.95 0.36..9.3 Si3586V 0 8 0.06 0.07 0. 3.4 4..5-0 8 0. 0.45 0..5 5.5 Si3588V 0 8 0.08 0. 0.8 3 5.5-0 8 0.45 0. 0.3. 5.5 Si3850AV 0 0.3 0.4.4 0.95.08-0 0.64 0.98 0.96..08 Si3590V 30 0.077 0. 3 3.5-30 0.7 0.3 3.8.5 Si355V 30 0 0.05 0.75.5..5-30 0 0. 0.36.8.4.5 PowerPAK ChipFET Si557U 0 8 0.039 0.045 0.055 6 6 8.3-0 8 0.07 0. 0.3 6 5.5 8.3 06-8 ChipFET Si555CC 0 8 0.036 0.04 0.05 4 6.5 3. - 0 8 0. 0. 0.56 4 6. 3. Si553CC 0 0.055 0.085 4.6 3. - 0 0.5 0.55 3.7 3.6 3. Si5504BC 30 0 0.065 0. 4 4.5 3. - 30 0 0.4 0.35 3.7 4.5. 3. SC70-6 Si563H 0 8 0.8 0.36 0.45.8.5 0.74-0 8 0.49 0.75.. 0.3 Si563EH 0 0.8 0.36 0.45.8 0.65 0.74-0 0.49 0.75.. 0.3 5/53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V Si555L 0 0.385 0.63 0.7 0.8 0.3-8 8 0.6 0.85. 0.6.5 0.3 Si553CL 0 0.39 0.578 0.7. 0.55 0.34-0 0.85.48 0.5.9 0.95 0.34 Si55L 0.9 4. 0.3 0.7 0.3-0 0.995.8 0.44 0.5 0.3 Si539CL 30 0 0.388 0.55 0.7 0.55 0.34-30 0 0.89.7 0.5.5 0.8 0.34 PowerPAK SC-70 SiA57J 8 0.09 0.034 0.044 0.065 4.5 5.6 6.5-8 0.06 0.08 0.5 0.7 4.5 8. 6.5 SiA533EJ 8 0.034 0.04 0.05 0.07 4.5 0 5.6 7.8-8 0.059 0.08 0.5 0.5 4.5 3 7.8 7.8 SiA59EJ 0 0.04 0.065 4.5 7.7 3.7 7.8-0 0.09 0.37 4.5 0.5 5.3 7.8 SC89-6 Si06CX 0 8 0.396 0.456 0.546 0.76 0.6.3 0. - 0 8 0.756.038.44.4 0.6.65 0. Si035X 0 5 5 7 9 0.4 0.75 0. - 0 5 8 5 0.6.5 0.3 Si09X 60 0.5 3 0.33 0.75 0.5-60 0 5 0 0.6.7 0.3 5/53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
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