MOSFETs - Comprehensive Power MOSFET Technology Range
|
|
|
- Silvia Lang
- 10 years ago
- Views:
Transcription
1 V ishay I ntertechnology, I nc. I INNOVAT AN TEC O L OGY N HN Power mosfets O Low to High Voltage Power MOSFETs ChipFET P o w e r PA K P o l a r PA K P o w e r PA I ThunderFET LITTLE FOOT MICO FOOT Tr e n c h F E T SkyFET Tu r b o F E T esources provides extensive support tools and information to assist you in your design. MOSFET WEB PAGE FEATUE MOSFET FAMILIES MOSFET PACKAGE COMPAISON TrenchFET Gen IV APPLICATION NOTES E Series High-Voltage THEMAL SIMULATION TOOL Series High-Voltage PAAMETIC SEACH Medium-Voltage / ThunderFET PCNS (if applicable) P-Channel Gen III SAMPLES S ugged Series CHECK ISTIBUTO STOCK ON-LINE LITEATUE LIBAY SALES CONTACTS One of the World s Largest Manufacturers of iscrete Semiconductors and Passive Components /53
2 Low Voltage Power MOSFETs - Compact and Efficient is a leader the industry in the development of power MOS silicon and packaging technologies that boost power management and power conversion efficiency and greatly reduce the board area required for MOSFETs in computers, laptops, notebooks, servers, tablet PCs, ebooks, cellular phones, consumer electronics and many other systems. continually innovates to meet the increasing demands of applications such as C/C conversion and load switching. For example, our TrenchFET Gen IV power MOSFET silicon technology enables on maximum resistance down to just mω. In another example, ThunderFET technology brings very low on-resistance to medium-voltage power MOSFETs. In another breakthrough, SkyFET monolithic MOSFET plus Schottky diode devices lower on-resistance compared to co-packaged devices and reduce power losses linked to the body diode of the MOSFET. The p-channel TrenchFET Gen III family of power MOSFETs offers a reduction in on-resistance compared with the previous state-of-the-art and signifies a new opportunity to reduce system power. The Vishay Siliconix portfolio also contains devices with on-resistance ratings down to. V to reduce the need for level shift circuitry, saving space and power. packaging innovations include the small-outline LITTLE FOOT, the thermally enhanced PowerPAK, offered in footprint areas from the SO-8 down to the SC-75, PolarPAK with double sided-cooling in standard, easy-to-use packaging, and chipscale MICO FOOT families. PowerPAI reduces space while still obtaining low on-resistance and high current comparable to two discretes. Each of these package types provides designers with a range of surface-mount options to ensure efficient use of space in power management, power conversion, and other power MOSFET applications. High-Voltage MOSFETs from Vishay Vishay s high-voltage MOSFET and FEFET product line, with voltages up to 000 V, serves a wide range of applications including lighting ballasts, industrial systems, renewable, UPS, servers, telecom systems, electric welding, computers, adaptors, and consumer electronics with package options including the TO-0, TO-47, PAK, IPAK, PAK, SOT3, FULLPAK 0, Super 47, HVMIP, KG, and IEONFILM. Conventional Planar Technology Gen 3 IFxxxx Series Wide voltage range Cost effective Very robust and high immunity to EMI Gen 6 IFxxxxL (FEFET) and IFxxxxK (MOSFET) Series State-of-the-art cellular planar technology Best performance in hard switched systems Highest efficiency in ZVS / resonant applications (high efficiency) Super Junction Technology Series SiHxxxxx Series New stripe planar technology Higher current density than previous generations More robust for the same die size Avalanche driven technology E Series SiHxxxxxE Series Enables a significant reduction of conducting and switching losses in switchmode power supplies (SMPS) Enables the design the AC/C power supplies that are even more efficient, more compact, lighter and cooler The basic principle of Super Junction technology is allowing the current to flow from top to bottom of the MOSFET in arranged high doped regions, reducing the impact of the epitaxial layer and thus bringing onresistance close to the zero A performance driven technology /53
3 Through-Hole Power MOSFET Package Max Body Height (mm) Max Width (mm) Max Footprint Area (mm ) Max epth (mm) Max Current* Super yes TO yes TO-0 Full PAK yes TO yes yes I PAK (TO-6) yes HVMIP 0.79 length body height Max Temp. ( C ) thjf or thjc C/W) yes IPAK (TO-5) yes yes Surface-Mount PAK yes yes PAK yes yes SOT yes yes PowerPAI 6x yes yes PowerPAI 6x yes yes PowerPAI 3x yes yes PolarPAK yes yes PowerPAK SO-8L yes yes 3/53
4 Power MOSFET Package Surface-Mount (continued) Max Body Height (mm) Max Width (mm) Max Footprint Area (mm ) Max epth (mm) Max Current* PowerPAK SO yes yes SO yes yes TSSOP yes yes PowerPAK yes yes PowerPAK -8S yes yes TSOP yes yes PowerPAK ChipFET yes yes 06-8 ChipFET yes yes SOT yes yes PowerPAK SC yes yes Thin PowerPAK SC yes yes SC yes yes MICO FOOT see individual datasheet yes yes PowerPAK SC yes yes Thin PowerPAK SC yes yes SC-75A yes yes SC yes yes 4/53 Max Temp. ( C ) thjf or thjc C/W)
5 The Power MOSFET is sorted by function, package size (biggest to smallest V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g Single N-Channel SUPE47 IFPS43N50K IFPS40N50L SiHS36N IFPS37N50A SiHS0N50C IFPS40N60K IFPS38N60L TO47 IFP IFP IFP IFP IFP IFP IFP IFP IFP IFP IFP SiHG5N IFP IFP360LC IFP350LC IFP IFP SiHG3N IFP3N50K IFP3N50L /53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
6 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SiHGN IFPN50A IFP3N50L IFP460B SIHG0N50C IFP7N50L SIHG6N50C SiHG4N IFP IFP SiHG73N60E SiHG47N60E SiHG30N60E SiHGN60E IFP7N60K IFP6N60L IFPN60K IFPN60L SIHG7N IFPC IFPC60LC IFPC50A IFPC IFPC50LC IFPC SiHG4N65E IFPE IFPE IFPE IFPF a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 6/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
7 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFPF IFPF IFPG IFPG IFPG FULLPAK0 IFIZ48G IFIZ44G ILIZ44G z IFIZ34G ILIZ34G z IFIZ4G ILIZ4G z 4 37 IFIZ4G ILIZ4G z IFI540G ILI540G z IFI530G ILI530G z IFI50G ILI50G z IFI50G IFI640G ILI640G z IFI630G ILI630G z IFI60G ILI60G 00 z IFI644G IFI634G a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 7/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
8 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFI64G SiHF0N IFI740GLC IFI740G SiHF6N IFI730G IFI70G SiHF8N SiHF6N50C IFIB7N50A SiHFN50C SiHF8N SIHF8N50L SiHF5N IFI80G SiHF30N60E SiHFN60E SiHF5N60E SiHFN60E SiHF7N60E IFIB6N60A IFIBC40G IFIBC40GLC IFIBC30G IFIBC0G IFIB5N65A IFIBE30G IFIBE0G IFIBF30G IFIBF0G a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 8/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
9 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g TO-0 SUP90N SUP85N03-3m6P SUP50N03-5mP SUP90N04-3m3P IFZ IFZ SUP90N06-5m0P SUP90N06-6m0P SUP60N06-P IFZ IFZ IFZ IFZ IFZ ILZ z IFZ ILZ z ILZ z 7 60 IFZ ILZ z IFZ SUP90N08-4m8P d SUP90N08-6m8P SUP90N08-7m7P SUP90N08-8mP SUP90N0-8m8P SUP85N SUP60N0-8P r SUP40N d /53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
10 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF IL z IF IL t IF IL t 9. 8 IL IF SUP90N5-8P SUP8N d SUP57N SUP36N0-54P s IF IL z IF IL z IF IL60 00 z IF SUP40N d IF IF IF IF SiHP5N IF740A IF740LC IF SiHP0N SiHP6N a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 0/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
11 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF IF730A IF IF SIHP8N50C IFB7N50L SiHP6N50C SiHP4N IFB3N50A SiHPN50C SiHP8N IF840LC SiHP5N IF IF80A SiHP30N60E SiHPN60E SiHP5N60E SIHP7N SiHPN60E SiHP7N60E IFB9N60A IFBC IFBC40A IFBC40LC IFBC IFBC30A IFBC SiHP4N65E IFB9N65A a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V /53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
12 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFBE IFBE IFBF IFBF IFBG IFBG PAK (TO-63) SUM60N0-3m9P SUM40N0-P SUM90N03-mP SUM0N03-04P SUM85N03-06P SUM0N04-mP SUM90N04-3m3P SUM70N04-07L SUM0N06-3m4L SUM90N06-4m4P SUM75N06-09L IFZ48S IFZ48S IFZ44S ILZ44S z IFZ34S ILZ34S t IFZ4S ILZ4L t ILZ4S t 0 IFZ4S ILZ4S t SUM90N08-4m8P d a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V /53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
13 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SUM90N08-6mP SUM0N08-07P SUM0N SUM60N d SUM40N d IF540S IL540S z IF530S IL530S t IF50S IL50L t IF50S IL50S z SUM75N5-8P SUM40N d SUM3N d 3 00 SUM65N SUM7N d IF640S IF640L SUM09N d 9 60 IL640S z IF630S IL630S z IF60S IL60S z IF60S SUM45N d SUM8N IF644S a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 3/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
14 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF634S IF64S IF64S IF740AS IF740S IF740AL IF730AS IF730S IF730AL IF70S IF70S SiHB6N50C IFSN50A IFSLN50A SiHBN50C IF840AL IF840AS IF840L IF840LCL IF840LCS IF840S IF830AL IF80AS IF80S IF80AL SiHB30N60E SiHBN60E SiHB5N60E SiHBN60E IFSL9N60A a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 4/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
15 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFS9N60A IFBC40L IFBC40S IFBC40AS IFBC30AS IFBC30AL IFBC30S IFBC30L IFBC0L IFBC0S SiHB4N65E IFBE30S IFBE30L IFBF30S IFBF0S IFBF0L IPAK / TO-5 IFU IFU ILU t IFU ILU t SUU09N0-76P d IFU ILU t IFU ILU t IFU IFU IFU a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 5/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
16 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFU IFU IFU SiHU5N IFU430A SiHU3N SiHU7N60E IFUC IFUN60A PAK (TO-5) SU50N0-06P SU50N0-09P SU4N03-3m9P SU50N03-P SU50N04-8m8P IF SU50N06-07L SU50N06-09L SU3N IF IF IL z 4 0 IF IL z SU40N SU50N0-8P SU35N0-6P SU06N0-5L IF IL z a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 6/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
17 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF IL z SU5N d SU5N d SU9N d IF IF SU7N IF IF IF IF SiH5N IF430A SiH3N SiH7N60E IFC IFN60A HVMIP IF IF IL z.5.3 IF IL IF IF IF IL z IF IL z 4..3 a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 7/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
18 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF IF IF IF IF IF IF IFC SOT3 IFL ILL z 5.6 IFL ILL z IFL IFL PowerPAK S0-8 Si494P Si7858BP Si49P Si404P Si440P Si866P Si800P Si890P Si80P Si496P Si40P Si44P Si484P Si438P a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 8/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
19 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si86P Si89P Si406P Si436P Si408P Si850P Si36P Si808P Si874P Si4P SiA00P Si8P Si58P SiA0P Si7658AP SiA04P Si88P SiA06P Si80P Si66P Si864P SiA0P Si466P SiAP Si460P Si7634BP Si330P Si468P Si40P SiA4P a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 9/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
20 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si48P Si46P Si7AP Si47P b Si640P Si470P Si64P Si44P Si46P Si48P Si4P Si46P Si836P Si66P Si764P Si7478P Si7460P Si7850P Si774P Si86P w Si880P w Si880AP w Si786P Si785P d Si785AP r Si870AP w Si804P Si846AP Si88AP w Si876AP w a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 0/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
21 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si878AP w Si7456P w Si43P w Si7454P w Si698P d Si87P w Si838P Si7738P Si7430P r Si7898P d Si77P d, q Si7450P d Si746P d Si7464P d.8 4. Si790P d, q Si7434P d PowerPAK SO-8L SiJ48P PolarPAK SiE80F SiE8F SiE88F SiE878F SiE848F SiE860F SiE86F SiE844F SiE868F SiE83F SiE876F a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V /53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
22 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SiE88F SiE854F SiE804F d, q SiE836F SO-8 Si4838BY Si4866BY Si436Y Si486Y Si44Y Si4004Y Si4630Y Si4654Y Si46Y Si4666Y Si4778Y Si46Y Si464Y Si466Y Si460Y Si4634Y Si468Y Si456Y Si46Y Si4048Y Si474Y Si47Y b Si434Y Si48Y Si478Y a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V /53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
23 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si454Y Si4Y Si44Y Si4840BY Si4446Y Si4850EY Si4436Y Si408Y Si40Y Si4896Y d Si490AY Si4090Y q Si4056Y w Si400Y d, q Si404Y Si40Y d, q Si447Y r Si4488Y Si4848Y d Si4490Y d Si448Y d Si4464Y d..5 Si446Y d Si4434Y d TSSOP-8 Si6466A Si PowerPAK -8 Si70N SiS45N a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 3/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
24 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SiS454N SiS46N Si706N SiS40N SiS376N SiS44N SiS438N SiS430N SiS436N SiSA04N SiS476N SiS444N SiSA0N SiSAN SiS456N SiS330N SiS40N Si74AN SiS47AN SiS33N SiSA8N SiS406N SiS334N SiS44N Si776AN SiS478N SiS4N SiS434N Si70AN Si744N a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 4/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
25 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si7308N Si78N SiS468N SiS890N w SiS89AN w Si73N Si780N d SiS698N d Si788N d Si780N d Si780N d TSOP-6 Si3464V Si3460V Si344CV Si340V Si344CV Si3456V Si3438V Si3458BV Si3430V d Si3440V d SOT-3 Si34S Si3CS Si30CS TN000K TN00K Si338S a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 5/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
26 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si336S Si366S Si300S Si304S Si38CS Si308BS N700K Si34S Si38S TN404K PowerPAK ChipFET Si5456U Si5486U Si548U Si5458U Si540U Si5476U ChipFET Si5406CC Si543C Si5440C Si544C Si5468C Si540BC SC70-6 Si44H Si4H Si44EH Si406H a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 6/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
27 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si40EH Si400L Si300BL Si44H Si48EH Si46EH Si470H Si46H Si308EL Si30L Si330EL e PowerPAK SC-70 SiA436J SiA406J SiA448J SiA430J SiA46J SiA400EJ SiA444JT* SiA43J SiA408J SiA456J SiA450J SC-75A Si0C Si Si * Thin a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 7/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
28 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g PowerPAK SC-75 SiB404K SiB488K SiB4EK SiB406EK SiB40K SiB408K SiB456K SiB45K SC-89 Si050X Si056X Si058X Si0X Si03X Si070X Si07X MICO FOOT Power MICO FOOT Si800B MICO FOOT.6 x.6 Si844B Si840B MICO FOOT.5 x Si846B Si8406B MICO FOOT x Si847B /53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
29 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g MICO FOOT 0.8 x 0.8 Si880B Si8806B Si88B f Si8800EB /53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
30 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g ual N-Channel PowerPAK SO-8 Si734P Si736P Si7994P Si77P Si770P Si7938P Si788P Si7960P Si794P d Si7956P d Si7946P d SO-8 Si404Y Si996CY Si48Y Si400Y Si40Y Si44Y Si40Y Si4936CY Si4904Y Si488Y Si486Y Si4946BEY b Si9945BY TSSOP-8 Si696A e Si695A e /53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
31 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si Si6954A PowerPAK -8 Si73N Si7904BN Si78N Si7N Si76N Si7N Si70N SiS90N Si79N d TSOP-6 Si3900V Si393V PowerPAK ChipFET Si5906U Si5944U Si5980U ChipFET Si5908C Si5904C Si590BC SC70-6 Si9EH Si958H Si90CL Si97H Si96L a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 3/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
32 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g PowerPAK SC-70 SiA90J SiA90EJ SiA906EJ PowerPAK SC-75 SiB94K SiB9K SC89-6 Si034CX Si08X Si06X /53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
33 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g Single P-Channel TO47 IFP IFP FULLPAK0 IFI9Z34G IFI9Z4G IFI9Z4G IFI9540G IFI9530G IFI950G IFI9640G IFI9630G IFI960G IFI960G IFI9634G TO-0 SUP75P SUP65P SUP90P06-09L SUP53P IF9Z IF9Z IF9Z SUP40P IF IF IF IF IF /53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
34 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF IF IF PAK (TO-63) SUM0P SUM0P06-08L SUM55P06-9L IF9Z34S IF9Z4S IF9Z4L IF9Z4S SUM0P08-L SUM90P0-9L SUM50P IF9540S IF9530S IF950S IF950S IF9640L IF9640S IF9630S IF960S IF960S IPAK / TO-5 IFU IFU IFU IFU SUU0P IFU a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 34/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
35 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IFU IFU IFU IFU IFU PAK (TO-5) SU45P SU50P SU45P04-6P IF IF SU50P SU9P SU08P06-55L IF IF SU50P08-5L SU50P0-43L SU09P IF IF IF IF IF IF HVMIP IF IF IF IF a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 35/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
36 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V IF IF IF IF SOT3 IFL IFL PowerPAK SO-8 Si737P Si74P Si40P Si7633P Si7635P Si745P Si735P Si739P Si749P Si743P Si7463AP Si746P Si7465P Si7469P Si7489P Si7439P d Si743P d SO-8 Si4465AY Si4477Y Si4463CY Si4403CY a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 36/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
37 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si9434BY Si9433BY h Si4497Y Si4459AY Si449EY b Si4483AY Si445Y Si485Y Si4835Y Si4435Y Si4487Y Si443CY Si4485Y Si440Y Si4447AY Si9407BY Si4455Y d, q Si4409Y d TSSOP-8 Si b Si6467B Si6433B Si6463B Si Si6435A PowerPAK -8 and PowerPAK -8S Si7405BN Si7655N* Si765AN * PowerPAK -8S a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 37/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
38 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si769N SiS407N Si763N Si7403BN Si765N Si79N Si767N Si7N Si769N Si76N Si745N Si7309N Si73N Si75N d Si77N d Si79N d TSOP-6 Si3499V Si3477V Si3473CV Si3447CV Si3407V Si3493BV Si3433CV Si3443CV Si3483CV Si3457CV Si3453V Si3459BV Si3437V d a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 38/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
39 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si3475V d SOT-3 Si39S Si305CS Si333S Si33CS Si399S Si377ES Si367S Si30CS TP00K Si343CS Si307CS Si303CS TP00K Si39CS Si309CS TP060K Si337S d, q. 7.5 Si35S d Si37S d PowerPAK ChipFET Si5459U Si549U Si549U ChipFET Si5475C Si547C Si5457C Si5403C a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 39/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
40 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si5435BC SC-70 Si489EH Si405BH Si35L Si40EH Si47EH Si307EL Si44EH Si47EH Si467H Si469H Si43EH Si403CL x Si37L Si303L Si443EH Si47H Si473H Si4H d Si49H d PowerPAK SC-70 SiA47J SiA447J SiA43J SiA445EJ SIA433EJ SiA49JT* SiA43J * Thin a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 40/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
41 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V SiA49J SiA46J SiA45J SiA45EJ x SiA4J SiA44J SC75A Si Si a PowerPAK SC-75 SiB437EKT* SiB455EK SiB457EK SiB433EK SiB45K SC89 Si067X Si069X Si03CX Si07X Si073X MICO FOOT MICO FOOT.4 x.6 Si8407B MICO FOOT.6 x.6 Si8439B Si845B Si8473EB Si843B * Thin a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 4/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
42 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). (W) 5 V 0 V 6 V 4.5 V 3.3 V.5 V.8 V.5 V. V 0 V 4.5 V Si8487B Si8409B MICO FOOT.5 x Si8483B Si8499B Si8497B MICO FOOT x Si8469B Si8467B Si846B MICO FOOT 0.8 x 0.8 Si8805EB Si8809EB a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V 4/53 t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
43 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g ual P-Channel PowerPAK SO-8 Si7997P Si7945P Si7949P SO-8 Si493Y Si9934BY Si493Y Si4943CY Si9933CY Si495Y Si4953AY Si4909Y Si4948BEY TSSOP-8 Si Si6943B Si Si6963B Si PowerPAK -8 Si793N Si79N Si793N Si7905N TSOP-6 Si398V Si3993CV /53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
44 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) 5 V 0 V 6 V 4.5 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 3.3 V.5 V.8 V.5 V. V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V I g PowerPAK ChipFET Si5999EU Si5997U ChipFET Si5935CC Si5933CC SC70-6 Si97EH Si965H Si967H Si903L PowerPAK SC-70 SiA975J SiA93AJ SiA93EJ SiA907EJT* SiA9EJ SiA9AJ SiA99J SiA95J PowerPAK SC-75 SiB9K SC89-6 Si03CX Si05X a * Thin 44/53 0 V 4.5 V (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
45 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V Single Plus Integrated iode PowerPAK SC-70 SiA850J Single Plus Integrated Schottky (SkyFET ) PowerPAK SO-8 Si779P Si798P Si774P Si7794P Si788P Si7774P Si7748P Si777P PolarPAK SiE76F SO-8 Si483Y Si4833BY Si468Y Si475Y Si4774Y Si47Y Si474Y Si4776Y Si460Y PowerPAK -8 SiS778N SiS78N SiS780N /53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
46 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V Si7703EN TSOP-6 Si3805V ChipFET Si5853C Si593C Si5855CC PowerPAK SC-70 SiA8AJ SiA84J Asymmetric ual PowerPAK SO-8 Si7998P PowerPAI 6 x 5 SiZ96T SiZ90T SiZ90T SiZ98T SiZ900T SiZ90T SiZ904T /53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
47 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V SO-8 Si476Y PowerPAI 6 x 3.7 SiZ70T SiZ78T SiZ730T SiZ70T SiZ704T PowerPAK -8 Si74N PowerPAI 3 x 3 SiZ300T Asymmetric ual Plus Schottky PowerPAK SO-8 Si7980P Si770P /53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
48 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V SO-8 Si4670Y Si468Y Si486BY b, k b, k Si496Y Si4830CY Si494BY PowerPAI 6 x 3.7 SiZ790T Level Shift TSOP-6 Si3865V Si386BV SC70-6 Si869H SC89-6 Si040X Common rain TSSOP-8 Si6968BE Si694AE e /53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
49 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V PowerPAK -8 Si7900AEN MICO FOOT.4 x.6 Si890EB c, f 5.7 Si890EB c /53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
50 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V N & P Pair PowerPAK SO-8 Si7540P SO-8 Si450BY Si45Y Si4500BY Si453CY Si4564Y Si4554Y Si4599Y Si4559AY TSSOP-8 Si656C Si6544B /53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
51 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V TSOP-6 Si3585CV Si3586V Si3588V Si3850AV Si3590V Si355V PowerPAK ChipFET Si557U ChipFET Si555CC Si553CC Si5504BC SC70-6 Si563H Si563EH /53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
52 The Power MOSFETs is sorted by function, package size (biggest to smallest, V S, S(on) at 4.5 V, and then S(on) at 0 V). Part Number Ch # V S V a. g at 5 V (vs. 0 V) b. g at 5 V (vs. 4.5 V) c. S = r SS / d. S(on) at 6 V (vs. 4.5 V) e. S(on) at 3 V (vs. 3.3 V) f. S(on) at 3.7 V (vs. 3.3 V) V F I F 5 V 0 V g. S(on) at 4.75 V (vs. 4.5 V) h. S(on) at.7v (vs..5 V j. S(on) at 3. V (vs. 3.3 V) k. S and connected 6 V S(on) (Ω) 4.5 V 3.3 V.5 V.8 V m. Schottky connected to channel p. S(on) at 3.6 V (vs. 3.3 V) q. g at 6 V (vs. 4.5 V) r. S(on) at 8 V (vs. 6 V) s. S(on) at 5 V.5 V I g 0 V 4.5 V Si555L Si553CL Si55L Si539CL PowerPAK SC-70 SiA57J SiA533EJ SiA59EJ SC89-6 Si06CX Si035X Si09X /53 (W) t. S(on) at 5 V u. S(on) at.7 V (vs..8 V) v. S(on) at 3.5 V (vs. 3.3 V) w. S(on) at 7.5 V (vs. 6 V) x. S(on) at 3.6 V (vs. 3.3 V) y. g at 8 V (vs. 4.5 V) z. S(on) at 4 V (vs. 4.5 V)
53 Worldwide Sales Contacts The Americas United states Vishay Americas One Greenwich Place Shelton, CT United States Ph: Fax: Asia singapore Vishay intertechnology Asia Pte Ltd. 37A Tampines Street 9 #07-00 Singapore Ph: Fax: p.r. China Vishay China Co., Ltd. 5, Sun Tong Infoport Plaza 55 Huai Hai West oad Shanghai P.. China PH: FAX: japan VISHAY JAPAN CO., LT. Shibuya Prestige Bldg. 4F 3--, Shibuya Shibuya-ku Tokyo Japan Ph: fax: EUOPE Germany Vishay Electronic GmbH r.-felix-zandman-platz 9500 Selb Germany Ph: Fax: france Vishay S.A. 99, bd de la madeleine nice, cedex France Ph: Fax: united kingdom Vishay Ltd. Suite 6C, Tower House St. Catherine s Court Sunderland Enterprise Park Sunderland S5 3XJ UNITE KINGOM Ph: Fax: /53
P-Channel Power MOSFETs Selector Guide
P-Channel Power MOSFETs Selector Guide 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed
Cree PV Inverter Tops 1kW/kg with All-SiC Design
Cree PV Inverter Tops 1kW/kg with All-SiC Design Alejandro Esquivel September, 2014 Presentation Outline 1. Meeting an Industry Need a) 1kW/Kg b) No electrolytic capacitors in DC link 2. 50 + kw SiC based
Dual P-Channel 40 V (D-S) MOSFET
Si7905DN Dual P-Channel 0 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) - 0 0.060 at V GS = - 0 V - 6 e nc 0.089 at V GS = -.5V - 5 f FEATURES Halogen-free According to IEC 69--
P-Channel 20-V (D-S) MOSFET
Si33DS P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).39 at V GS = -.5 V -.7 -.5 at V GS = -.5 V -..68 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to IEC 69-- Available
P-Channel 12 V (D-S) MOSFET
New Product SiEH P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) G -. at V GS = -.5 V -.6 at V GS = -.5 V -.7 at V GS = -.8 V -. at V GS = -.5 V - SOT-6 SC-7 (6-LEAS) Top
N-Channel 80-V (D-S) MOSFET
Si785P N-Channel 80-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) 80 8 7 6 0.065 at V GS = 0 V.5 0.0 at V GS = 6 V 0.9 PowerPAK SO-8 5 S 6.5 mm 5.5 mm Ordering Information: Bottom View S S 3 G
P-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
N-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
Dual P-Channel 2.5 V (G-S) MOSFET
Si593DC Dual P-Channel.5 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).55 at V GS = -.5 V ±.9 -.8 at V GS = - 3.6 V ±.7.6 at V GS = -.5 V ±. FEATURES Halogen-free According to IEC 69-- Definition
Automotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (D-S) 75 C MOSFET SQ36AEES PRODUCT SUMMARY V DS (V) -6 R DS(on) () at V GS = - V 7 R DS(on) () at V GS = -4.5 V.3 I D (A) -.9 Configuration Single D 3 SOT-3 (TO-36) G Top View
Semiconductor Technology
May 4 th, 2011 Semiconductor Technology Evolution to optimize inverter efficiency Andrea Merello Field Applications Engineer Page 1 More than 70% of the energy gets lost on its way to the target application
N-Channel 60-V (D-S), 175 C MOSFET
N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter
N-Channel 30-V (D-S) MOSFET
Si3456V N-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.) 3.4 at V GS = V 6.3.5 at V GS = 4.5 V 5.7 TSOP-6 Top View.8 nc FEATURES Halogen-free According to IEC 649-- efinition
P-Channel 60 V (D-S) MOSFET
TP6K P-Channel 6 V (D-S) MOSFET G S PRODUCT SUMMARY V DS (V) R DS(on) ( ) V GS(th) (V) I D (ma) - 6 6 at V GS = - V - to - - 85 TO-6 (SOT-) Top View D Marking Code: 6Kwll 6K = Part Number Code for TP6K
Bi-directional FlipFET TM MOSFETs for Cell Phone Battery Protection Circuits
Bi-directional FlipFET TM MOSFETs for Cell Phone Battery Protection Circuits As presented at PCIM 2001 Authors: *Mark Pavier, *Hazel Schofield, *Tim Sammon, **Aram Arzumanyan, **Ritu Sodhi, **Dan Kinzer
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
Advantages of SiC MOSFETs in Power Applications
Advantages of SiC MOSFETs in Power Applications Power Forum, Bologna September 18 th, 2014 Pascal Ducluzeau Product Marketing Director Microsemi Power Module Products [email protected] Topics Advantages
Load Switch with Level-Shift
Load Switch with Level-Shift PRODUCT SUMMARY V IN (V DS2 ) (V) R DS(on) (Ω) I D (A).5 to 2 DESCRIPTION.54 at V IN = 4.5 V 3.9.77 at V IN = 2.5 V 3.2.6 at V IN =.8 V 2.8.65 at V IN =.5 V 2.2 The includes
Discrete Solutions for Power Supplies March 2002
Discrete Solutions for Power Supplies March 2002 Analog Discrete Interface & Logic Optoelectronics Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one
IRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
AUIRLR2905 AUIRLU2905
Features dvanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free,
N-Channel 40-V (D-S) 175 C MOSFET
N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4
A I DM. -55 to + 175 T STG. Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw
IGITL UIO MOSFET P 9673 IRFB565PbF Features Key Parameters Optimized for Class udio mplifier pplications Low R SON for Improved Efficiency Low Q G and Q SW for Better TH and Improved Efficiency Low Q RR
Application Note AN-940
Application Note AN-940 How P-Channel MOSFETs Can Simplify Your Circuit Table of Contents Page 1. Basic Characteristics of P-Channel HEXFET Power MOSFETs...1 2. Grounded Loads...1 3. Totem Pole Switching
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V
AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9399A AUTOMOTIVE MOSFET Typical Applications Electric Power Steering (EPS) Antilock Braking System (ABS) Wiper Control Climate Control Power Door Benefits Advanced Process Technology Ultra Low OnResistance
High-Bandwidth, Low Voltage, Dual SPDT Analog Switches
DG, DG High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION The DG/DG are monolithic CMOS dual single-pole/double-throw (SPDT) analog switchs. They are specifically designed for low-voltage,
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
POWER FORUM, BOLOGNA 20-09-2012
POWER FORUM, BOLOGNA 20-09-2012 Convertitori DC/DC ad alta densità di potenza e bassa impedenza termica. Massimo GAVIOLI. Senior Field Application Engineer. Intersil SIMPLY SMARTER Challenges when Designing
AAT4280 Slew Rate Controlled Load Switch
General Description Features SmartSwitch The AAT4280 SmartSwitch is a P-channel MOSFET power switch designed for high-side load switching applications. The P-channel MOSFET device has a typical R DS(ON)
Two-Switch Forward Converter: Operation, FOM, and MOSFET Selection Guide
VISHAY SILICONIX www.vishay.com MOSFETs by Philip Zuk and Sanjay Havanur The two-switch forward converter is a widely used topology and considered to be one of the most reliable converters ever. Its benefits
AUTOMOTIVE GRADE. Orderable Part Number AUIRF7805Q SO-8 Tape and Reel 4000 AUIRF7805QTR
UTOMOTIVE GRE UIRF7805Q Features dvanced Planar Technology Low On-Resistance Logic Level N Channel MOSFET Surface Mount vailable in Tape & Reel 150 C Operating Temperature Lead-Free, RoHS Compliant utomotive
OptiMOS 3 Power-Transistor
Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
TSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
AN1703 APPLICATION NOTE GUIDELINES FOR USING ST S MOSFET SMD PACKAGES
AN170 APPLICATION NOTE GUIELINES FO USING ST S MOSFET SM PACKAGES 1. ABSTACT.Gulino The trend from through-hole packages to low-cost SM-applications is marked by the improvement of chip technologies. "Silicon
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP6NK60Z STP6NK60ZFP STB6NK60Z
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
Si5DS P-Channel.5-W,.-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V ±.5 -.7 at V GS = -.5 V ±. at V GS = -. V ± FEATURES Halogen-free According to IEC 9-- Available TrenchFET
IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1
Lower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD -97428 IRFH5020PbF HEXFET Power MOSFET V DS 200 V 55 m: R DS(on) max (@V GS = V) Q g (typical) 36 nc R G (typical).9 : I D (@T c(bottom) = 25 C) 43 A PQFN 5X6 mm Applications Secondary Side Synchronous
Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
AUIRFR8405 AUIRFU8405
Features Advanced Process Technology New Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
High Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die
UBS Technology Conference
UBS Technology Conference London, 13 March 2013 Ulrich Pelzer Corporate Vice President Finance, Treasury & Investor Relations Table of Contents Infineon at a Glance Power Semiconductors and Manufacturing
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Solar Cell Bypass Diodes in Silicon Crystalline Photovoltaic Panels
VISHAY GENERAL SEMICONDUCTOR www.vishay.com Rectifiers IMPORTANT CHARACTERISTICS OF BYPASS DIODES FOR PHOTOVOLTAIC SOLAR CELLS 1. Forward Voltage Drop (V F ) at Bypass The basic function of bypass diodes
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast
How To Make A Field Effect Transistor (Field Effect Transistor) From Silicon P Channel (Mos) To P Channel Power (Mos) (M2) (Mm2)
TPC811 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC811 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due
ST SiC MOSFET Evolution in Power Electronics
ST SiC MOSFET Evolution in Power Electronics Simone Buonomo Market & Application Development Manager Power Transistor Division [email protected] Power Transistor Division Agenda 2 SiC MOSFET Time Speaker
DG2515, DG2516. 3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS
Not for New Design DG, DG -Ω, -MHz Bandwidth, Dual SPDT Analog Switch DESCRIPTION The DG, DG are low-voltage dual single-pole/ double-throw monolithic CMOS analog switches. Designed to operate from.8 V
Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
High-Speed, Low r ON, SPST Analog Switch (1-Bit Bus Switch)
High-Speed, Low r ON, SPST Analog Switch (1-Bit Bus Switch) DG2301 ishay Siliconix DESCRIPTION The DG2301 is a high-speed, 1-bit, low power, TTLcompatible bus switch. Using sub-micron CMOS technology,
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
Quad, Rail-to-Rail, Fault-Protected, SPST Analog Switches
19-2418; Rev ; 4/2 Quad, Rail-to-Rail, Fault-Protected, General Description The are quad, single-pole/single-throw (SPST), fault-protected analog switches. They are pin compatible with the industry-standard
MOSFET TECHNOLOGY ADVANCES DC-DC CONVERTER EFFICIENCY FOR PROCESSOR POWER
MOSFET TECHNOLOGY ADVANCES DC-DC CONVERTER EFFICIENCY FOR PROCESSOR POWER Naresh Thapar, R.Sodhi, K.Dierberger, G.Stojcic, C.Blake, and D.Kinzer International Rectifier Corporation El Segundo, CA 90245.
30V Internal Switch LCD Bias Supply
19-1666; Rev 1; 1/3 3V Internal Switch LCD Bias Supply General Description The boost converter contains a.5a internal switch in a tiny 6-pin SOT23 package. The IC operates from a +2.4V to +5.5V supply
DC-to-DC Design Guide
DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform
SK54B SCHOTTKY RECTIFIER
Applications: SCHOTTKY RECTIFIER Features: Switching power supply Converters Free-Wheeling diodes Reverse battery protection Disk drives Battery charging Small foot print, surface mountable Very low forward
Features S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8
FC54P V P-Channel Logic Level PowerTrench MOSFET February 22 FC54P General escription This V P-Channel MOSFET uses Fairchild s high voltage PowerTrench process. It has been optimized for power management
PIN and Limiter Diodes
PIN and Limiter Diodes Features Limiter diodes Low-distortion performance Low loss Excellent power handling Available in single, series pair and low inductance configurations Application: Used as a passive
Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
V DSS R DS(on) max Qg. 30V 3.2mΩ 36nC
PD - 96232 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
Features. TA=25 o C unless otherwise noted
NDSAN N-Channel, Logic Level, PowerTrench MOSFET June NDSAN General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor s advanced PowerTrench process that has been
STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features
NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices
Automotive MOSFET Selection Guide 2015
Automotive MOSFET Selection Guide 2015 Performance, Quality, Reliability Automotive Power MOSFETs Commitment to Quality Designed with automotive in mind } NXP Automotive Power MOSFETs are commonly deployed
Schottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES
TSM020N03PQ56 30V N-Channel MOSFET
PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q
Automotive MOSFETs in Linear Applications: Thermal Instability
Application Note, V1.0, May 2005 Automotive MOSFETs in Linear Applications: Thermal Instability by Peter H. Wilson Automotive Power N e v e r s t o p t h i n k i n g. - 1 - Table of Content 1. Introduction...
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
CHAPTER 6 THERMAL DESIGN CONSIDERATIONS. page. Introduction 6-2. Thermal resistance 6-2. Junction temperature 6-2. Factors affecting R th(j-a) 6-2
CHAPTER 6 THERMAL DESIGN CONSIDERATIONS page Introduction 6-2 Thermal resistance 6-2 Junction temperature 6-2 Factors affecting 6-2 Thermal resistance test methods 6-3 Test procedure 6-3 Forced air factors
IRFP460LC PD - 9.1232. HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.27Ω I D = 20A
HEXFET Power MOSFET PD - 9.232 IRFP460LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
Preliminary Datasheet
Features Macroblock Preliminary Datasheet 1.2A Constant Output Current 93% Efficiency @ input voltage 13V, 350mA, 9~36V Input Voltage Range Hysteretic PFM Improves Efficiency at Light Loads Settable Output
Understanding Diode Reverse Recovery and its Effect on Switching Losses
Understanding Diode Reverse Recovery and its Effect on Switching Losses Peter Haaf, Senior Field Applications Engineer, and Jon Harper, Market Development Manager, Fairchild Semiconductor Europe Abstract
DirectFET TM - A Proprietary New Source Mounted Power Package for Board Mounted Power
TM - A Proprietary New Source Mounted Power Package for Board Mounted Power by Andrew Sawle, Martin Standing, Tim Sammon & Arthur Woodworth nternational Rectifier, Oxted, Surrey. England Abstract This
DG2302. High-Speed, Low r ON, SPST Analog Switch. Vishay Siliconix. (1-Bit Bus Switch with Level-Shifter) RoHS* COMPLIANT DESCRIPTION FEATURES
High-Speed, Low r ON, SPST Analog Switch (1-Bit Bus Switch with Level-Shifter) DG2302 DESCRIPTION The DG2302 is a high-speed, 1-bit, low power, TTLcompatible bus switch. Using sub-micron CMOS technology,
1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604
a FEATURES 1 pc Charge Injection (Over the Full Signal Range) 2.7 V to 5.5 V ual Supply 2.7 V to 5.5 ingle Supply Automotive Temperature Range: 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 Typ On
IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings
![IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings](/thumbs/40/21333646.jpg "IRF150 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL. Absolute Maximum Ratings")
PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055Ω 38A IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543]
Design A High Performance Buck or Boost Converter With Si9165
Design A High Performance Buck or Boost Converter With Si9165 AN723 AN723 by Kin Shum INTRODUCTION The Si9165 is a controller IC designed for dc-to-dc conversion applications with 2.7- to 6- input voltage.
STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
IRF5305PbF. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.06Ω I D = -31A
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
Infineon to Acquire International Rectifier
Infineon to Acquire International Rectifier Investor and Analyst Presentation 21 August 2014 Investor Relations Key Facts Strategic Rationale Financial Rationale Summary Disclaimer: This presentation contains
IXAN0052 IXAN0052. New Power Electronic Components for Materials Handling Drive. Systems. Andreas Lindemann. IXYS Semiconductor GmbH
New Power Electronic Components for Materials Handling Drive Systems Andreas Lindemann IXYS Semiconductor GmbH Postfach 1180, D { 68619 Lampertheim www.ixys.net There is a variety of drives in lift trucks
Description. For Fairchild s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
FSA2357 Low R ON 3:1 Analog Switch Features 10µA Maximum I CCT Current Over an Expanded Control Voltage Range: V IN=2.6V, V CC=4.5V On Capacitance (C ON): 70pF Typical 0.55Ω Typical On Resistance (R ON)
Design and Construction of Variable DC Source for Laboratory Using Solar Energy
International Journal of Electronics and Computer Science Engineering 228 Available Online at www.ijecse.org ISSN- 2277-1956 Design and Construction of Variable DC Source for Laboratory Using Solar Energy
Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube
N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220
High Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES
Features. Symbol JEDEC TO-220AB
Data Sheet June 1999 File Number 2253.2 3A, 5V,.4 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
IS2.3-6 Wide Bandgap (WBG) Power Devices for High-Density Power Converters Excitement and Reality
IS2.3-6 Wide Bandgap (WBG) Power Devices for High-Density Power Converters Excitement and Reality Krishna Shenai, Ph.D. Principal Electrical Engineer, Argonne National Laboratory Senior Fellow, NAISE,
700 MHz, -3 db Bandwidth; Dual SPDT Analog Switch
7 MHz, -3 db Bandwidth; Dual SPDT Analog Switch DESCRIPTION is a low R ON, high bandwidth analog switch configured in dual SPDT. It achieves 5.5 Ω switch on resistance, greater than 7 MHz -3 db bandwidth