State-of-the-Art Flash Memory Technology, Looking into the Future
|
|
- Lillian Ethel Chandler
- 8 years ago
- Views:
Transcription
1 State-of-the-Art Flash Memory Technology, Looking into the Future April 16 th, 2012 大 島 成 夫 (Jeff Ohshima) Technology Executive Memory Design and Application Engineering Semiconductor and Storage Products Company Toshiba Corporation
2 Reorganization as of July. 1 st, 2011 Semiconductor and Storage Products Company Total Storage Solution by Toshiba SSD Flash Trad-Enterprise Near-line Mobile Industrial CE Client Enterprise
3 Capacity [EB] Storage Market Forecast The storage market continues to grow. Storage capacity will never catch up with the speed of the information explosion. Info-plosion Amount of information produced by human activities 35ZB EB 800EB This Gap contain 1. Unused Stream Data 2. Transfer Info. Data 3. Temporary Data Opt. Flash Contribution of Flash Memory 1% 2.5% 5% 出 展 :TSR 社 () 日 本 記 憶 メディア 工 業 会 (CD/DVD/BD) ベースにTSB 試 算 情 報 生 成 量 / 利 用 可 能 ストレージ(IDC 白 書 ) XX
4 Current System Global Server Side Changes in Data Storage in Cloud Computing Era DRAM Cloud Computing Network system Global Server Side SSD DRAM SSD Replace SaaS Grid Computing ASP Cloud Computing Utility Computing Ubiquitous Computing On Demand Computing Car Mobile Phone PC DSC Car Smart Phone PC SSD Smart TV Tablet DSC Tape Client Application SSD Client Application
5 Yokkaichi Factory
6 Next Gen. 3D Memory Technology
7 The Narrowing Road Map to the Future Costly Mountains 2 0
8 Memory Road Map for Emerging Memory 09 年 10 年 11 年 12 年 13 年 14 年 15 年 ~ 32n Post 24n 19n Extension of FG BiCS Cross Point 3D Post-post Many Candidates NEMS Memory Molecular Memory Organic Memory Race Track Working Memory MRAM
9 What is BiCS technology? A break-through concept for 3D memory Row Decoder Cell Array Stack Plate electrode Pillar electrode Punch Plug New 3D stacked memory High cost effectiveness Memory cell
10 BiCS Flash Memory BiCS technology applied to flash Upper SG Control Gate (WL) Lower SG (GSL) Vertical poly-si TFT for cell/select gate Charge trap memory with cylinder shape ONO Shared control gate Source Line (CSL) Bit Line Channel Poly Si Tunnel Ox Charge SiN Block Ox Control Gate String Bit Line Upper Select Gate Control Gate Lower Select Gate Source Line
11 P-BiCS Flash N+ Diffusion Bit Line Source Line Select Gate No Diffusion between gates Non-doped poly-si Channel Control Gates Back Gate P-BiCS has U shaped string with back gate to reduce parasitic resistance of bottom portion. There is no diffusion between CGs. Select gate has asymmetric source and drain structure to reduce off current.
12 Non-Volatile Random Access memory (Work memory) Introduction of STT-MRAM
13 STT-MRAM; Work Memory + Code Storage Capacity (bits) 100G Data Storage 10G Working Memory BiCS/ReRAM FG- 1G 100M DRAM Scaling PCM NOR Code Storage Target Area of FG-/ Post- 10M SRAM MRAM Target Area of High-density MRAM 1M 1E-9 1E-8 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 Write/Program Cycle Time (s) MRAM > PCM Program time P/E Endurance
14 STT-MRAM Target Field etc Server PC DVC DRAM based Applications Handset DSC Tablet
15 Why STT-MRAM? DRAM Scaling Down continously?? Difficulty?? At DRAM Cell Capacitor beyond 20nm More Refresh More Power More Refresh Poor Performance STT-MRAM could cover beyond 20nm working RAM field.
16 What is STT-MRAM? STT (Spin-Transfer Torque) MRAM Non-volatile & Resistive Cell - Electron spin to store data - Magnetic storage elements (MTJ: Magnetic Tunnel Junction) State 0 (Low Resistance) State 1 (High Resistance) Ferromagnetic Reference Layer Tunnel Barrier Ferromagnetic Storage Layer Parallel Spin State Anti-Parallel Spin State
17 FG Summary Continuous scaling is on going for 2X/1Xnm FG- and as far as possible Post BiCS and ReRAM are most promising candidate. And now test chip learning is on going STT-MRAM Spin Transfer Torque MRAM is the promising memory, Non-volatile, high speed random access, unlimited cycling
18 Thank you
Charge-Trapping (CT) Flash and 3D NAND Flash Hang-Ting Lue
Charge-Trapping (CT) Flash and 3D NAND Flash Hang-Ting Lue Macronix International Co., Ltd. Hsinchu,, Taiwan Email: htlue@mxic.com.tw 1 Outline Introduction 2D Charge-Trapping (CT) NAND 3D CT NAND Summary
More informationNon-Volatile Memory. Non-Volatile Memory & its use in Enterprise Applications. Contents
Non-Volatile Memory Non-Volatile Memory & its use in Enterprise Applications Author: Adrian Proctor, Viking Technology [email: adrian.proctor@vikingtechnology.com] This paper reviews different memory technologies,
More informationFlash & DRAM Si Scaling Challenges, Emerging Non-Volatile Memory Technology Enablement - Implications to Enterprise Storage and Server Compute systems
Flash & DRAM Si Scaling Challenges, Emerging Non-Volatile Memory Technology Enablement - Implications to Enterprise Storage and Server Compute systems Jung H. Yoon, Hillery C. Hunter, Gary A. Tressler
More informationWhy Hybrid Storage Strategies Give the Best Bang for the Buck
JANUARY 28, 2014, SAN JOSE, CA Tom Coughlin, Coughlin Associates & Jim Handy, Objective Analysis PRESENTATION TITLE GOES HERE Why Hybrid Storage Strategies Give the Best Bang for the Buck 1 Outline Different
More informationNon-Volatile Memory and Its Use in Enterprise Applications
Non-Volatile Memory and Its Use in Enterprise Applications Contributor: Viking Technology January 2014 About the SNIA The Storage Networking Industry Association (SNIA) is a not for profit global organization,
More informationWinbond W971GG6JB-25 1 Gbit DDR2 SDRAM 65 nm CMOS DRAM Process
Winbond W971GG6JB-25 1 Gbit DDR2 SDRAM 65 nm CMOS DRAM Process Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor
More informationAdvances in Flash Memory Technology & System Architecture to Achieve Savings in Data Center Power and TCO
Advances in Flash Memory Technology & System Architecture to Achieve Savings in Data Center Power and TCO Dr. John R. Busch Vice President and Senior Fellow October 18, 2013 1 Forward-Looking Statements
More informationFlash s Role in Big Data, Past Present, and Future OBJECTIVE ANALYSIS. Jim Handy
Flash s Role in Big Data, Past Present, and Future Jim Handy Tutorial: Fast Storage for Big Data Hot Chips Conference August 25, 2013 Memorial Auditorium Stanford University OBJECTIVE ANALYSIS OBJECTIVE
More information2014 EMERGING NON- VOLATILE MEMORY & STORAGE TECHNOLOGIES AND MANUFACTURING REPORT
2014 EMERGING NON- VOLATILE MEMORY & STORAGE TECHNOLOGIES AND MANUFACTURING REPORT COUGHLIN ASSOCIATES SAN JOSE, CALIFORNIA April 2014 2014 Emerging NV Memory & Storage Technologies and Manufacturing Report
More informationDriving The Need For Innovative Memory Solutions
Driving The Need For Innovative Memory Solutions Dr. Ronald D. Black President & CEO 3 February 2014 Quote When a management with a reputation for brilliance tackles a business with a reputation for bad
More informationPrice/performance Modern Memory Hierarchy
Lecture 21: Storage Administration Take QUIZ 15 over P&H 6.1-4, 6.8-9 before 11:59pm today Project: Cache Simulator, Due April 29, 2010 NEW OFFICE HOUR TIME: Tuesday 1-2, McKinley Last Time Exam discussion
More informationMemory Basics. SRAM/DRAM Basics
Memory Basics RAM: Random Access Memory historically defined as memory array with individual bit access refers to memory with both Read and Write capabilities ROM: Read Only Memory no capabilities for
More information3D NAND Technology Implications to Enterprise Storage Applications
3D NAND Technology Implications to Enterprise Storage Applications Jung H. Yoon Memory Technology IBM Systems Supply Chain Outline Memory Technology Scaling - Driving Forces Density trends & outlook Bit
More informationAlgorithms and Methods for Distributed Storage Networks 3. Solid State Disks Christian Schindelhauer
Algorithms and Methods for Distributed Storage Networks 3. Solid State Disks Institut für Informatik Wintersemester 2007/08 Solid State Disks Motivation 2 10 5 1980 1985 1990 1995 2000 2005 2010 PRODUCTION
More informationChapter 9 Semiconductor Memories. Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan
Chapter 9 Semiconductor Memories Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 2 Outline Introduction
More information{The Non-Volatile Memory Technology Database (NVMDB)}, UCSD-CSE Techreport CS2015-1011
The Non-Volatile Memory Technology Database (NVMDB) UCSD-CSE Techreport CS2015-1011 Kosuke Suzuki Fujitsu Laboratories Ltd. kosuzuki@jp.fujitsu.com Steven Swanson UC San Diego swanson@cs.ucsd.edu Flash,
More informationModule 2. Embedded Processors and Memory. Version 2 EE IIT, Kharagpur 1
Module 2 Embedded Processors and Memory Version 2 EE IIT, Kharagpur 1 Lesson 5 Memory-I Version 2 EE IIT, Kharagpur 2 Instructional Objectives After going through this lesson the student would Pre-Requisite
More informationCrossbar Resistive Memory:
White Paper Crossbar Resistive Memory: The Future Technology for NAND Flash By Hagop Nazarian, Vice President of Engineering and Co-Founder Abstract NAND Flash technology has been serving the storage memory
More informationThe Evolving NAND Flash Business Model for SSD. Steffen Hellmold VP BD, SandForce
The Evolving NAND Flash Business Model for SSD Steffen Hellmold VP BD, SandForce Flash Forward: Flash Flash Memory Memory Storage Storage Solutions Solutions Solid State Storage - Vision Solid State Storage
More informationSamsung 3bit 3D V-NAND technology
White Paper Samsung 3bit 3D V-NAND technology Yield more capacity, performance and power efficiency Stay abreast of increasing data demands with Samsung's innovative vertical architecture Introduction
More information4 th Workshop on Innovative Memory Technologies
Resistive RAM (ReRAM) Technology for High Density Memory Applications Sunjung Kim sj-21.kim@samsung.com Semiconductor R&DC Center SAMSUNG Electronics 4 th Workshop on Innovative Memory Technologies Contents
More informationFlash Memories. João Pela (52270), João Santos (55295) December 22, 2008 IST
Flash Memories João Pela (52270), João Santos (55295) IST December 22, 2008 João Pela (52270), João Santos (55295) (IST) Flash Memories December 22, 2008 1 / 41 Layout 1 Introduction 2 How they work 3
More informationRAM & ROM Based Digital Design. ECE 152A Winter 2012
RAM & ROM Based Digital Design ECE 152A Winter 212 Reading Assignment Brown and Vranesic 1 Digital System Design 1.1 Building Block Circuits 1.1.3 Static Random Access Memory (SRAM) 1.1.4 SRAM Blocks in
More informationEvaluating Embedded Non-Volatile Memory for 65nm and Beyond
Evaluating Embedded Non-Volatile Memory for 65nm and Beyond Wlodek Kurjanowicz DesignCon 2008 Sidense Corp 2008 Agenda Introduction: Why Embedded NVM? Embedded Memory Landscape Antifuse Memory evolution
More information3D Charge Trapping (CT) NAND Flash Yen-Hao Shih
3D Charge Trapping (CT) NAND Flash Yen-Hao Shih Macronix International Co., Ltd. Hsinchu,, Taiwan Email: yhshih@mxic.com.tw 1 Outline Why Does NAND Go to 3D? Design a 3D NAND Flash Memory Challenges and
More informationTechnology Trends in the Storage Universe
Technology Trends in the Storage Universe Connected Life and Mobile Devices William Cain, PhD VP Technology, WD, a Western Digital company September 13, 2012 Currie Munce, PhD VP Research, HGST, a Western
More informationHow To Understand Cloud Storage In A Flash Memory Flash Memory Hard Disk Drive (Hard Disk) And Flash Memory (Flash Memory) (Flash) (Hard Drive) (Non-Flash) Hard Disk Drives (Harddrive) (Sustained)
Innovative Hard Disk Drives And SSDs For Cloud Applications WHD 2015, Rainer Kaese Toshiba Electronics 2015 Toshiba Europe Corporation GmbH 1 Abstract What are cloud specific Hard Disk Drives and Solid
More informationSemiconductor Memories
Semiconductor Memories Semiconductor memories array capable of storing large quantities of digital information are essential to all digital systems Maximum realizable data storage capacity of a single
More informationEmbedded STT-MRAM for Mobile Applications:
Embedded STT-MRAM for Mobile Applications: Enabling Advanced Chip Architectures Seung H. Kang Qualcomm Inc. Acknowledgments I appreciate valuable contributions and supports from Kangho Lee, Xiaochun Zhu,
More information快 閃 記 憶 體 的 產 業 應 用 與 製 程
快 閃 記 憶 體 的 產 業 應 用 與 製 程 ATP Electronics Inc. 資 深 產 品 經 理 Jes Wang May, 2008 Education & Experiences: 伊 利 諾 理 工 學 院 CIS Master Degree 台 灣 微 軟 產 品 經 理 研 華 科 技 產 品 經 理 Copyright 2007 ATP Electronics, Inc.
More informationNAND Basics Understanding the Technology Behind Your SSD
03 Basics Understanding the Technology Behind Your SSD Although it may all look the same, all is not created equal: SLC, 2-bit MLC, 3-bit MLC (also called TLC), synchronous, asynchronous, ONFI 1.0, ONFI
More information1 / 25. CS 137: File Systems. Persistent Solid-State Storage
1 / 25 CS 137: File Systems Persistent Solid-State Storage Technology Change is Coming Introduction Disks are cheaper than any solid-state memory Likely to be true for many years But SSDs are now cheap
More informationSamsung Electronics Co., Ltd.
Samsung Electronics Co., Ltd. May 9, 2008 1. Financial Highlights - Performance Sales (Parent) (Consolidated) 80 60 40 (Trillion KRW) 73.9 CAGR 9% 67.6 62.8 57.6 57.5 59.0 63.2 43.6 120 100 80 60 (Trillion
More informationSamsung 2bit 3D V-NAND technology
Samsung 2bit 3D V-NAND technology Gain more capacity, speed, endurance and power efficiency Traditional NAND technology cannot keep pace with growing data demands Introduction Data traffic continues to
More informationFlash Memory Jan Genoe KHLim Universitaire Campus, Gebouw B 3590 Diepenbeek Belgium
Flash Memory Jan Genoe KHLim Universitaire Campus, Gebouw B 3590 Diepenbeek Belgium http://www.khlim.be/~jgenoe [1] http://en.wikipedia.org/wiki/flash_memory Geheugen 1 Product evolution Jan Genoe: Geheugen
More informationNAND Flash Memory as Driver of Ubiquitous Portable Storage and Innovations
NAND Flash Memory as Driver of Ubiquitous Portable Storage and Innovations aka: how we changed the world and the next chapter July 7, 2 Jian Chen Technical Executive, NAND System Engineering Memory, Oh
More informationFrom physics to products
From physics to products From MRAM to MLU and beyond memory Magnetic Random Access Memory Magnetic Logic Unit Lucien Lombard Crocus-Technology Overview 1 - The semiconductor industry 2 - Crocus-Technology
More informationData Storage Technology Update
Data Storage Technology Update Hal Woods Vice President and Chief Architect HGST Elastic Storage Platforms April 15, 2015 I have some bad news for you and good news for me You are a data hoarder, an addict
More informationEmerging Solutions. Laura Stark Senior Vice President and General Manager
Emerging Solutions Laura Stark Senior Vice President and General Manager What is ESD? Memory & Interfaces Moving the world s data from memory through interfaces Cryptography Research Reinventing embedded
More informationEmerging storage and HPC technologies to accelerate big data analytics Jerome Gaysse JG Consulting
Emerging storage and HPC technologies to accelerate big data analytics Jerome Gaysse JG Consulting Introduction Big Data Analytics needs: Low latency data access Fast computing Power efficiency Latest
More informationSolid State Technology What s New?
Solid State Technology What s New? Dennis Martin, President, Demartek www.storagedecisions.com Agenda: Solid State Technology What s New? Demartek About Us Solid-state storage overview Types of NAND flash
More informationSLC vs MLC NAND and The Impact of Technology Scaling. White paper CTWP010
SLC vs MLC NAND and The mpact of Technology Scaling White paper CTWP010 Cactus Technologies Limited Suite C, 15/F, Capital Trade Center 62 Tsun Yip Street, Kwun Tong Kowloon, Hong Kong Tel: +852-2797-2277
More informationHandout 17. by Dr Sheikh Sharif Iqbal. Memory Unit and Read Only Memories
Handout 17 by Dr Sheikh Sharif Iqbal Memory Unit and Read Only Memories Objective: - To discuss different types of memories used in 80x86 systems for storing digital information. - To learn the electronic
More informationEvaluating STT-RAM as an Energy-Efficient Main Memory Alternative
1 Evaluating STT-RAM as an Energy-Efficient Main Memory Alternative Emre Kültürsay, Mahmut Kandemir, Anand Sivasubramaniam, and Onur Mutlu The Pennsylvania State University and Carnegie Mellon University
More informationNanotechnologies for the Integrated Circuits
Nanotechnologies for the Integrated Circuits September 23, 2015 Dr. Bertrand Cambou Professor of Practice NAU, Cybersecurity School of Informatics, Computing, and Cyber-Systems Agenda The Market Silicon
More informationScaling from Datacenter to Client
Scaling from Datacenter to Client KeunSoo Jo Sr. Manager Memory Product Planning Samsung Semiconductor Audio-Visual Sponsor Outline SSD Market Overview & Trends - Enterprise What brought us to NVMe Technology
More informationData Storage At the Heart of any Information System. Ken Claffey, VP/GM - June 2015
Data Storage At the Heart of any Information System Ken Claffey, VP/GM - June 2015 Seagate: A Unique Vantage Point on the Data Centre Evolution of the world s digital information End-to-end cloud solutions:
More informationThe Technologies & Architectures. President, Demartek
Deep Dive on Solid State t Storage The Technologies & Architectures Dennis Martin Dennis Martin President, Demartek Demartek Company Overview Industry analysis with on-site test lab Lab includes servers,
More informationOverview of emerging nonvolatile memory technologies
Meena et al. Nanoscale Research Letters 2014, 9:526 NANO REVIEW Overview of emerging nonvolatile memory technologies Jagan Singh Meena, Simon Min Sze, Umesh Chand and Tseung-Yuen Tseng * Open Access Abstract
More informationTechnologies Supporting Evolution of SSDs
Technologies Supporting Evolution of SSDs By TSUCHIYA Kenji Notebook PCs equipped with solid-state drives (SSDs), featuring shock and vibration durability due to the lack of moving parts, appeared on the
More informationAccelerating I/O- Intensive Applications in IT Infrastructure with Innodisk FlexiArray Flash Appliance. Alex Ho, Product Manager Innodisk Corporation
Accelerating I/O- Intensive Applications in IT Infrastructure with Innodisk FlexiArray Flash Appliance Alex Ho, Product Manager Innodisk Corporation Outline Innodisk Introduction Industry Trend & Challenge
More informationSolid State Drives Data Reliability and Lifetime. Abstract
Solid State Drives Data Reliability and Lifetime White Paper Alan R. Olson & Denis J. Langlois April 7, 2008 Abstract The explosion of flash memory technology has dramatically increased storage capacity
More information1. Memory technology & Hierarchy
1. Memory technology & Hierarchy RAM types Advances in Computer Architecture Andy D. Pimentel Memory wall Memory wall = divergence between CPU and RAM speed We can increase bandwidth by introducing concurrency
More informationThe Machine: The future of technology patrick.demichel@hp.com Hyperscale Division EMEA
The Machine: The future of technology patrick.demichel@hp.com Hyperscale Division EMEA Agenda 1: Vision 2: The core technologies The memristor The photonic 3: The MACHINE The most exciting shifts of our
More informationChapter 9: Peripheral Devices: Magnetic Disks
Chapter 9: Peripheral Devices: Magnetic Disks Basic Disk Operation Performance Parameters and History of Improvement Example disks RAID (Redundant Arrays of Inexpensive Disks) Improving Reliability Improving
More informationChapter 5 :: Memory and Logic Arrays
Chapter 5 :: Memory and Logic Arrays Digital Design and Computer Architecture David Money Harris and Sarah L. Harris Copyright 2007 Elsevier 5- ROM Storage Copyright 2007 Elsevier 5- ROM Logic Data
More informationChanging the World: The Flash Memory Revolution. Eli Harari Chairman & CEO SanDisk Corporation
Changing the World: The Flash Memory Revolution Eli Harari Chairman & CEO SanDisk Corporation Forward Looking Statement During our meeting today we will be making forward-looking statements. Any statement
More informationNAND Flash Architecture and Specification Trends
NAND Flash Architecture and Specification Trends Michael Abraham (mabraham@micron.com) NAND Solutions Group Architect Micron Technology, Inc. August 2012 1 Topics NAND Flash Architecture Trends The Cloud
More informationToshiba America Electronic Components, Inc. Flash Memory
Toshiba America Electronic Components, Inc. Flash Memory Fact Sheet Company Overview Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation
More informationCSCA0201 FUNDAMENTALS OF COMPUTING. Chapter 5 Storage Devices
CSCA0201 FUNDAMENTALS OF COMPUTING Chapter 5 Storage Devices 1 1. Computer Data Storage 2. Types of Storage 3. Storage Device Features 4. Other Examples of Storage Device 2 Storage Devices A storage device
More informationWith respect to the way of data access we can classify memories as:
Memory Classification With respect to the way of data access we can classify memories as: - random access memories (RAM), - sequentially accessible memory (SAM), - direct access memory (DAM), - contents
More informationChapter 6. 6.1 Introduction. Storage and Other I/O Topics. p. 570( 頁 585) Fig. 6.1. I/O devices can be characterized by. I/O bus connections
Chapter 6 Storage and Other I/O Topics 6.1 Introduction I/O devices can be characterized by Behavior: input, output, storage Partner: human or machine Data rate: bytes/sec, transfers/sec I/O bus connections
More informationComputer Systems Structure Main Memory Organization
Computer Systems Structure Main Memory Organization Peripherals Computer Central Processing Unit Main Memory Computer Systems Interconnection Communication lines Input Output Ward 1 Ward 2 Storage/Memory
More informationPPGCC. Non-Volatile Memory: Emerging Technologies And Their Impacts on Memory Systems. Taciano Perez, César A. F. De Rose. Technical Report Nº 060
Pontifícia Universidade Católica do Rio Grande do Sul Faculdade de Informática Pós-Graduação em Ciência da Computação Non-Volatile Memory: Emerging Technologies And Their Impacts on Memory Systems Taciano
More informationHighly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.15, NO.2, APRIL, 2015 ISSN(Print) 1598-1657 http://dx.doi.org/10.5573/jsts.2015.15.2.286 ISSN(Online) 2233-4866 Highly Scalable NAND Flash Memory Cell
More informationParts of a Computer. Preparation. Objectives. Standards. Materials. 1 1999 Micron Technology Foundation, Inc. All Rights Reserved
Parts of a Computer Preparation Grade Level: 4-9 Group Size: 20-30 Time: 75-90 Minutes Presenters: 1-3 Objectives This lesson will enable students to: Identify parts of a computer Categorize parts of a
More informationThe Future of Data Storage
The Future of Data Storage Principles, Potential and Problems Hans Coufal IBM Almaden Research Center Areal Density Megabits/in2 arpers2001ab2.prz 1E+6 10 6 1E+5 10 5 1E+4 10 4 1E+3 10 3 1E+2 10 2 1E+1
More informationMicron MT29F2G08AAB 2 Gbit NAND Flash Memory Structural Analysis
August 17, 2006 Micron MT29F2G08AAB 2 Gbit NAND Flash Memory Structural Analysis For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor
More informationComputer Architecture
Computer Architecture Random Access Memory Technologies 2015. április 2. Budapest Gábor Horváth associate professor BUTE Dept. Of Networked Systems and Services ghorvath@hit.bme.hu 2 Storing data Possible
More informationHow NAND Flash Threatens DRAM
How NAND Flash Threatens DRAM Jim Handy OBJECTIVE ANALYSIS Outline Why even think about DRAM vs. NAND? The memory/storage hierarchy What benchmarks tell us What about 3D XPoint memory? The system of the
More informationMemory. The memory types currently in common usage are:
ory ory is the third key component of a microprocessor-based system (besides the CPU and I/O devices). More specifically, the primary storage directly addressed by the CPU is referred to as main memory
More informationNAND Flash memory. Samsung Electronics, co., Ltd Flash design team 2010. 05. 07. Kihwan Choi - 1/48 - ELECTRONICS
NAND Flash memory Samsung Electronics, co., Ltd Flash design team 2010. 05. 07 Kihwan Choi - 1/48 - Contents Introduction Flash memory 101 Basic operations Current issues & approach In the near future
More informationA N. O N Output/Input-output connection
Memory Types Two basic types: ROM: Read-only memory RAM: Read-Write memory Four commonly used memories: ROM Flash, EEPROM Static RAM (SRAM) Dynamic RAM (DRAM), SDRAM, RAMBUS, DDR RAM Generic pin configuration:
More informationFlash and Storage Class Memories. Technology Overview & Systems Impact. Los Alamos/HECFSIO Conference August 6, 2008
Flash and Storage Class Memories Technology Overview & Systems Impact Winfried W. Wilcke Sr. Manager, Nanoscale Science & Technology; Program Director, Silicon Valley Projects Los Alamos/HECFSIO Conference
More informationCSCA0102 IT & Business Applications. Foundation in Business Information Technology School of Engineering & Computing Sciences FTMS College Global
CSCA0102 IT & Business Applications Foundation in Business Information Technology School of Engineering & Computing Sciences FTMS College Global Chapter 2 Data Storage Concepts System Unit The system unit
More informationStorage Class Memory and the data center of the future
IBM Almaden Research Center Storage Class Memory and the data center of the future Rich Freitas HPC System performance trends System performance requirement has historically double every 18 mo and this
More informationThe Economics of Intelligent Hybrid Storage. An Enmotus White Paper Sep 2014
The Economics of Intelligent Hybrid Storage An Enmotus White Paper Sep 2014 SUMMARY Solid State Storage is no longer the storage of the future. It can be found in high- end data centers, in the servers
More informationDisk Storage & Dependability
Disk Storage & Dependability Computer Organization Architectures for Embedded Computing Wednesday 19 November 14 Many slides adapted from: Computer Organization and Design, Patterson & Hennessy 4th Edition,
More informationFLASH TECHNOLOGY DRAM/EPROM. Flash. 1980 1982 1984 1986 1988 1990 1992 1994 1996 Year Source: Intel/ICE, "Memory 1996"
10 FLASH TECHNOLOGY Overview Flash memory technology is a mix of EPROM and EEPROM technologies. The term flash was chosen because a large chunk of memory could be erased at one time. The name, therefore,
More informationAn Overview of Flash Storage for Databases
An Overview of Flash Storage for Databases Vadim Tkachenko Morgan Tocker http://percona.com MySQL CE Apr 2010 -2- Introduction Vadim Tkachenko Percona Inc, CTO and Lead of Development Morgan Tocker Percona
More informationManaging the evolution of Flash : beyond memory to storage
Managing the evolution of Flash : beyond memory to storage Tony Kim Director, Memory Marketing Samsung Semiconductor I nc. Nonvolatile Memory Seminar Hot Chips Conference August 22, 2010 Memorial Auditorium
More informationMemory Systems. Static Random Access Memory (SRAM) Cell
Memory Systems This chapter begins the discussion of memory systems from the implementation of a single bit. The architecture of memory chips is then constructed using arrays of bit implementations coupled
More informationAn Analysis Of Flash And HDD Technology Trends
An Analysis Of Flash And HDD Technology Trends Edward Grochowski EdwGrochowski@aol.com Computer Storage Consultant San Jose, CA 95120 Robert E. Fontana, Jr. rfontan@us.ibm.com Almaden Research Center IBM
More informationThe 2007 Nobel Prize in Physics. Albert Fert and Peter Grünberg
The 2007 Nobel Prize in Physics Albert Fert and Peter Grünberg Albert Fert and Peter Grünberg are well-known for having opened a new route in science and technology by their discovery of the Giant MagnetoResistance
More informationEmerging Technologies in Random Access Memories
International Journal of Advances in Engineering Science and Technology 84 www.sestindia.org/volume-ijaest/ and www.ijaestonline.com ISSN: 2319-1120 Manju K. Chattopadhyay, Raj Kamal School of Electronics,
More informationSLC vs MLC: Proper Flash Selection for SSDs in Industrial, Military and Avionic Applications. A TCS Space & Component Technology White Paper
SLC vs MLC: Proper Flash Selection for SSDs in Industrial, Military and Avionic Applications A TCS Space & Component Technology White Paper Introduction As with most storage technologies, NAND Flash vendors
More informationWEBTECH EDUCATIONAL SERIES
FLASH FOR THE REAL WORLD SEPARATE HYPE FROM REALITY WEBTECH EDUCATIONAL SERIES FLASH FOR THE REAL WORLD SEPARATE HYPE FROM REALITY Join us for a live webcast and hear Hu Yoshida, chief technology officer
More informationManagement Challenge. Managing Hardware Assets. Central Processing Unit. What is a Computer System?
Management Challenge Managing Hardware Assets What computer processing and storage capability does our organization need to handle its information and business transactions? What arrangement of computers
More informationYaffs NAND Flash Failure Mitigation
Yaffs NAND Flash Failure Mitigation Charles Manning 2012-03-07 NAND flash is one of very few types of electronic device which are knowingly shipped with errors and are expected to generate further errors
More informationDell Reliable Memory Technology
Dell Reliable Memory Technology Detecting and isolating memory errors THIS WHITE PAPER IS FOR INFORMATIONAL PURPOSES ONLY, AND MAY CONTAIN TYPOGRAPHICAL ERRORS AND TECHNICAL INACCURACIES. THE CONTENT IS
More informationThe Evolving Role of Flash in Memory Subsystems. Greg Komoto Intel Corporation Flash Memory Group
The Evolving Role of Flash in Memory Subsystems Greg Komoto Intel Corporation Flash Memory Group Legal Disclaimer INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS and TECHNOLOGY.
More informationUnexpected Power Loss Protection
White Paper SanDisk Corporation Corporate Headquarters 951 SanDisk Drive Milpitas, CA 95035, U.S.A. Phone +1.408.801.1000 Fax +1.408.801.8657 www.sandisk.com Table of Contents Executive Summary 3 Overview
More informationFile System Management
Lecture 7: Storage Management File System Management Contents Non volatile memory Tape, HDD, SSD Files & File System Interface Directories & their Organization File System Implementation Disk Space Allocation
More informationAMAGNETIC TUNNEL JUNCTION (MTJ) is a vertical
IEEE TRANSACTIONS ON MAGNETICS, VOL. 47, NO. 11, NOVEMBER 2011 4611 A High-Reliability, Low-Power Magnetic Full Adder Yi Gang 1;2, Weisheng Zhao 1;2, Jacques-Olivier Klein 1;2, Claude Chappert 1;2, and
More informationApplications for Low Density SLC NAND Flash Memory
Brochure More information from http://www.researchandmarkets.com/reports/2229069/ Applications for Low Density SLC NAND Flash Memory Description: The NOR flash memory market is shrinking as parallel NOR
More informationData Storage Industry: Global Trends, Developments and Opportunities. Spectacular Global Growth
Data Storage Industry: Global Trends, Developments and Opportunities Spectacular Global Growth The data storage industry is currently growing at a healthy rate. The holiday pictures that you now put on
More informationMake A Right Choice -NAND Flash As Cache And Beyond
Make A Right Choice -NAND Flash As Cache And Beyond Simon Huang Technical Product Manager simon.huang@supertalent.com Super Talent Technology December, 2012 Release 1.01 www.supertalent.com Legal Disclaimer
More informationUltra-High Density Phase-Change Storage and Memory
Ultra-High Density Phase-Change Storage and Memory by Egill Skúlason Heated AFM Probe used to Change the Phase Presentation for Oral Examination 30 th of May 2006 Modern Physics, DTU Phase-Change Material
More informationDEVELOPMENTS & TRENDS IN FEOL MATERIALS FOR ADVANCED SEMICONDUCTOR DEVICES Michael Corbett mcorbett@linx-consulting.com Semicon Taiwan2015
DEVELOPMENTS & TRENDS IN FEOL MATERIALS FOR ADVANCED SEMICONDUCTOR DEVICES Michael Corbett mcorbett@linx-consulting.com Semicon Taiwan2015 LINX BACKGROUND Linx Consulting 1. We help our clients to succeed
More informationLogical Operations. Control Unit. Contents. Arithmetic Operations. Objectives. The Central Processing Unit: Arithmetic / Logic Unit.
Objectives The Central Processing Unit: What Goes on Inside the Computer Chapter 4 Identify the components of the central processing unit and how they work together and interact with memory Describe how
More information