)WILEY-VCH. conferences and critical reviews. Editor-in-Chief. Martin Stutzmann, Garching. Regional Editors. Managing Editor

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1 conferences and critical reviews Editor-in-Chief Martin Stutzmann, Garching Regional Editors Martin S. Brandt, Garching Peter Deak, Budapest Jose Roberto Leite t. Sao Paulo (Deceased 11 June 2004) John I. B. Wilson, Edinburgh Managing Editor Stefan Hildebrandt, Berlin Proceedings The 5th International Symposium on Blue Laser and Light Emitting Diodes Gyeongju, Korea March 2004 TECHNISCHE ] INFORMATIONSBIBLiOTHEK 6 UNIVERSITATSBIBLIOTHEK HAiNNOVER I Guest Editors Eun-Kyung Suh, Euijoon Yoon, and Hyung Jae Lee )WILEY-VCH

2 Contents Full text on our homepage at: This Table of Contents is organized according to the topics presented at the conference. Articles with page numbers marked (a) and (b) are reprinted from phys. stat. sol. (a) 201, No. 12, (2004) and (b) 241, No. 12, (2004), respectively. You may find papers with phys. stat. sol. (a), phys. stat. sol. (b), and phys. stat. sol. (c) citations in the three sections of this volume, separated by coloured sheets for easy orientation. Note from the Publisher: This issue of physica status solidi (c) has been produced from publication-ready manuscript files, written by the authors using the provided Word or LaTeX templates. Preface 2393 Committees 2394 Optoelectronic devices Novel cladding structure for ZnSe-based white LEDs with longer lifetime over 10,000 hours T. Nakamura, K. Katayama, H. Mori, and S. Fujiwara (b) Electric-field dependence of luminescence spectra of (In,Ga)N/GaN LEDs containing quantum wells U. Jahn, S. Dhar, M. Ramsteiner, and K. Fujiwara (a) Study on the stability of the high-brightness white LED Z. Z. Chen, J. Zhao, Z. X. Qin, X. D. Hu, T. J. Yu, Y. Z. Tong, Z. J. Yang, X. Y. Zhou, G. Q. Yao, B.Zhang, and G.Y.Zhang (b) Effects of GaN substrates on InAlGaN quaternary UV LEDs Katsushi Akita, Takao Nakamura, and Hideki Hirayama (a) GaN films and GaN-based light emitting diodes grown on the sapphire substrates with highdensity nano-craters formed in situ metalorganic vapor phase epitaxial reactor M. Hao, H. Ishikawa, B. Zhang, and T. Egawa (c) HI-N based short-wavelength LEDs, LUCO-LEDs, and lasers F. Sommer, T. Stephan, F. Vollrath, K. Kohler, M. Kunzer, S. Miiller, P. Schlotter, W. Pletschen, U. Kaufmann, and J. Wagner (a) Facet degradation of (Al,In)GaN laser diodes Thomas Schoedl, Ulrich T. Schwarz, Stephan Miller, Andreas Leber, Michael Furitsch, Alfred Lell, and Volker Harle (a) Fabrication of high-power flip-chip blue and white LEDs operating under high current density D. A. Zakheim, I. P. Smirnova, E. M. Arakcheeva, M. M. Kulagina, S. A. Gurevich, I. V. Rozhansky, V. W. Lundin, A. F. Tsatsulnikov, A. V. Sakharov, A. V. Fomin, A. L. Zakheim, E. D. VasiFeva, and G. V. Itkinson (c) Milliwatt power 350 nm-band quaternary InAlGaN UV-LEDs on GaN substrates Hideki Hirayama, Katsushi Akita, Takashi Kyono, and Takao Nakamura (a)

3 2384 Contents High power blue LED development using different growth modes Dong S. Lee, Doru I. Florescu, Dong Lu, Jeff C. Ramer, Vinod Merai, Aniruddh Parekh, Michael J. Begarney, and Eric A. Armour (a) InGaN/GaN multi-quantum dot light-emitting diodes L. W. Ji, Y. K. Su, and S. J. Chang (c) Fabrication of AlInGaN-based blue-violet laser diode with low input power Joon Seop Kwak, T. Jang, K. K. Choi, Y. J. Sung, Y. H. Kim, S. Chae, S. N. Lee, K. H. Ha, O. H. Nam, and Y. Park (a) Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si H. Ishikawa, K. Asano, B. Zhang, T. Egawa, and T. Jimbo (a) GaN-based UV/blue electroluminescent devices deposited on Si at low temperature Y. Aoki, M. Hama, A. Koike, M. Tomonari, T. Honda, and H. Kawanishi (c) Novel photodetectors based on InGaN/GaN multiple quantum wells C. Rivera, J. L. Pau, F. B. Naranjo, and E. Mufioz (a) Carrier injection and light emission in visible and UV nitride LEDs by modeling S. Yu. Karpov, K. A. Bulashevich, I. A. Zhmakin, V. O. Nestoklon, V. F. Mymrin, and Yu. N. Makarov (b) Influence of electron tunneling barriers on the performance of InGaN-GaN ultraviolet light-emitting diodes K. C. Kim, Y. C. Choi, D. H. Kim, T. G. Kim, S. H. Yoon, C. S. Sone, and Y. J. Park... (a) InGaN violet laser diodes grown by molecular beam epitaxy J. Heffernan, M. Kauer, S. E. Hooper, V. Bousquet, and K. Johnson (a) Current status of GaN-based multiple quantum well laser diodes H. Watanabe, T. Umezaki, J. Minoura, M. Ohashi, N. Arazoe, R. Nakamura, T. Hatano, T. Sonoyama, Y. Watanabe, M. Okawachi, and S. Iwayama (a) InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror J. Dorsaz, J.-F. Carlin, C. M. Zellweger, S. Gradecak, and M. Ilegems (a) Defect and stress control of AlGaN for fabrication of high performance UV light emitters H. Amano, A. Miyazaki, K. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, I. Akasaki, R. Liu, A. Bell, F. A. Ponce, S. Sahonta, and D. Cherns (a) Fabrication of metal-semiconductor-metal (MSM) UV photodetectors with AljuGao^N/GaN heterostructures Dong-Wook Kim, Kyong-Seok Chea, Yong-Jo Park, In-Hwan Lee, and Cheul-Ro Lee.. (a) Effects of doping parameters on the CIE value of flexible white organic light emitting diodes Fuh-Shyang Juang, Yu-Sheng Tsai, Ming-Yein Lin, Chan-Yi Yang, David Lin, Wen-Tunn Wang, and Chai- Yuan Shen (a) Fabrication of p-side down GaN vertical light emitting diodes on copper substrates by laser lift-off J. T. Chu, H. C. Kuo, C. C. Kao, H. W. Huang, C. F. Chu, C. F. Lin, and S. C. Wang... (c) GaPN-GaP double heterostructure light emitting diode grown on GaP substrate by solid-source molecular beam epitaxy S. Y. Moon, A. Utsumi, H. Yonezu, Y. Furukawa, T. Ikeda, and A. Wakahara (a) Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafertransfer techniques Dong-Sing Wuu, Shun-Cheng Hsu, Shao-Hua Huang, and Ray-Hua Horng (a) Automated electrochemical CV profiling of LED structures on wafer scale T. Wolff, M. Rapp, and T. Rotter (c) Analysis of the wavelength-power performance roll-off in green light emitting diodes Christian Wetzel, Theeradetch Detchprohm, Peng Li, and Jeffrey S. Nelson (c)

4 Contents 2385 Cleaved laser facets on free-standing InGaN LD membrane created by laser lift-off and structural characterisation of the membrane Li Zilan, Hu Xiaodong, Qin Zhixin, Yu Tongjun, Nie Ruijuan, Lu Min, Ren Qian, Zhang Bei, Yarig Zhijian, Chen Weihua, Chen Zhizhong, Yang Hua, and Zhang Guoyi.. (c) Efficient conversion of blue light into white light by means of rare-earth-ion-doped transparent material Y. Mita, Takeshi Kobayashi, Yoshinobu Miyamoto, Osamu Ishii, and Naruhito Sawanobori (b) InGaN-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmic p-contact K. Tamura, K. Nakahara, M. Sakai, D. Nakagawa, N. Ito, M. Sonobe, H. Takasu, H. Tampo, P. Fons, K. Matsubara, K. Iwata, A. Yamada, and S. Niki (a) Optically pumped lasing and gain formation properties in blue In/Ja^N MQWs K. Kojima, A. Shikanai, K. Omae, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai, and Sg. Fujita (b) Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement Woong Joon Hwang, Tae Hee Lee, Lan Kim, and Moo Whan Shin (c) Thermal analysis of GaN-based LEDs using the finite element method and unit temperature profile approach Tae Hee Lee, Lan Kim, Woong Joon Hwang, C. C. Lee, and Moo Whan Shin (b) Aging characteristics of II-VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates Yuki Nakai, Ichirou Nomura, Yasushi Takashima, Akihiko Kikuchi, and Katsumi Kishino (a) Current status and future prospects of GaN-based LEDs and LDs T. Mukai, S. Nagahama, T. Kozaki, M. Sano, D. Morita, T. Yanamoto, M. Yamamoto, K. Akashi, and S. Masui (a) Characteristics of GaN-based laser diodes for post-dvd applications O. H. Nam, K. H. Ha, J. S. Kwak, S. N. Lee, K. K. Choi, T. H. Chang, S. H. Chae, W. S. Lee, Y. J. Sung, H. S. Paek, J. H. Chae, T. Sakong, J. K. Son, H. Y. Ryu, Y. H. Kim, and Y. Park (a) Calculation of the external quantum efficiency of light emitting diodes with different chip designs T. V. Cuong, H. S. Cheong, and C.-H. Hong (c) Versatile ultraviolet light emitting diodes for sensor applications Yoon-Kyu Song, A. V. Nurmikko, Maria Gherasimova, Seong-Ran Jeon, and Jung Han.. (a) High brightness GaN-based light emitting diodes using ITO/n + -InGaN/InGaN superlattice/n + - GaN/p-GaN tunneling junction Suk-Hun Lee, Hyo-Kun Son, Sung-Jae Kim, Hwan-Hee Jeong, Ja-Soon Jang, Jong-Jae Jung, Sang-Hern Lee, Tae Hoon Kim, and Young Moon Yu (a) LED Highlight Session Feature Article Efficient white LED lighting and its application to medical fields T. Taguchi, Y. Uchida, and K. Kobashi (a) Feature Article High brightness LEDs for general lighting applications using the new ThinGaN -Technology V. Haerle, B. Hahn, S. Kaiser, A. Weimar, S. Bader, F. Eberhard, A. Plbssl, and D. Eisert. (a) Blue laser diode (LD) and light emitting diode (LED) applications ArpadA. Bergh (a)

5 2386 Contents Growth and characterization Etch-pits and threading dislocations in thick LEO GaN films on sapphire grown by MOCVD Lu Min, Chang Xin, Fang Hui-Zhi, Yang Zhi-Jian, Yang Hua, Li Zi-Lan, Ren Qian, Zhang Guo-Yi, and Zhang Bei (c) Bulk GaN single crystal growth for substrate by solvent-thermal method T. I. Shin, H. J. Lee, K. W. Chung, M. S. Kang, and D. H. Yoon (c) Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method M. Bockowski, I. Grzegory, B. Lucznik, S. Krukowski, M. Wr6blewski, P. Kwiatkowski, K. Jasik, W. Wawer, J. Borysiuk, G. Kamler, and S. Porowski (b) High quality AlGaN growth by changing growth pressure and insertion of AIN/GaN superlattice interlayer J. Y. Kim, K. J. Lee, E. H. Shin, K. Y. Lim, S. H. Lee, and K. S. Nahm (c) Influence of etching condition on surface morphology of A1N and GaN layers N. Kuwano, R. Tajima, S. Bohyama, H. Miyake, K. Hiramatsu, and T. Shibata (a) Structural analysis of thick GaN films grown by hydride vapour phase epitaxy Pierre Ruterana, Jun Chen, Gerard Nouet, Benliang Lei, Haohua Ye, Guanghui Yu, Ming Qi, and Aizhen Li (b) Micro-zone optical measurements on GaN based nitride/air distributed Bragg reflector (DBR) mirrors made by focused ion beam milling Qian Ren, Bei Zhang, Baoping Zhang, Jun Xu, Zhi Jian Yang, and Xiao Dong Hu.... (c) Effect of the nitridation process on cubic GaN film quality grown on AlGaAs buffer layer by RF-MBE Junichi Shike, Atsushi Shigemori, Noritaka Tanaka, Masamichi Ouchi, Koichi Ishida, Kiyoshi Takahashi, and Ryuhei Kimura (c) Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates Nikolaus Gmeinwieser, Karl Engl, Ulrich T. Schwarz, Josef Zweck, Werner Wegscheider, Stephan Miller, Andreas Leber, Andreas Weimar, Alfred Lell, and Volker Harle (a) Electroluminescence from deep level transitions in an AlGaN/GaN superlattice J. K. Son, T. Sakong, S. N. Lee, W. S. Lee, H. Paek, H. Y. Ryu, K. Choi, S. Chae, O. Nam, and Y. Park (a) Strong blue emission from Er 3 * doped in ALGa^^N A. Wakahara, Y. Nakanishi, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima, T. Kamiya, andy.-t. Kim (a) Growth pressure dependence of residual strain and threading dislocations in the GaN layer Sung-Nam Lee, J. K. Son, H. S. Paek, T. Sakong, W. Lee, K. H. Kim, S. S. Kim, Y. J. Lee, D. Y. Noh, E. Yoon, O. H. Nam, and Y. Park (c) The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition Hyunseok Na, Hyun Jin Kim, Soon-Yong Kwon, Cheolsoo Sone, Yongjo Park, and Euijoon Yoon (c) Photoluminescence and Raman scattering in Mg and P co-implanted GaN epitaxial layers K. T. Liu, Y. K. Su, S. J. Chang, K. Onomitsu, and Y. Horikoshi (b) Micro-Raman scattering profiling studies on HVPE-grown free-standing GaN A. Kasic, D. Gogova, H. Larsson, C. Hemmingsson, I. Ivanov, B. Monemar, C. Bundesmann, and M. Schubert (a) High-quality GaN films grown on Si(l 11) by a reversed Stranski-Krastanov growth mode N. C. Chen, C. F. Shih, C. A. Chang, A. P. Chiu, S. D. Teng, and K. S. Liu (b) Effects of proton irradiations on GaN-based materials J. P. Chang, T. Y. Lin, H. F. Hong, T. C. Gunng, J. L. Shen, and Y. F. Chen (c) Bias-assisted activation of p-gan at low temperature in air J. M. Hwang, W. H. Hung, and H. L. Hwang (c)

6 Contents 2387 Growth of thick AlGaN by metalorganic-hydride vapor phase epitaxy K. H. Kim, J. Y. Yi, H. J. Lee, M. Yang, H. S. Ahn, C. R. Cho, S. W. Kim, S. C. Lee, Y. Honda, M. Yamaguchi, and N. Sawaki (c) Molecular beam epitaxial growth of GaN using ammonia cluster ion beam as a nitrogen source H. Saito, M. Taguchi, M. Ohishi, M. Yoneta, and K. Imai (c) Oxidation study of InN/sapphire (0001) film using in-situ synchrotron X-ray scattering Ik Jae Lee, Jae-Yong Kim, Tae-Bong Hur, and Hyung-Kook Kim (a) Photo-induced absorption change for InGaN film by violet laser diode Masahiro Nomura, Munetaka Arita, Satoshi Ashihara, Masao Nishioka, Yasuhiko Arakawa, Tsutomu Shimura, and Kazuo Kuroda (b) Eu concentration dependence on structural and optical properties of Eu-doped GaN Hyungjin Bang, Shinichi Morishima, Takaharu Tsukamoto, Zhiqiang Li, Junji Sawahata, Jongwon Seo, Mikio Takiguchi, Yoshio Bando, and Katsuhiro Akimoto (b) The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films Seong-Woo Kim, Hideo Aida, and Toshimasa Suzuki (c) Efficiency enhancement of InGaN/GaN light-emitting diodes utilizing island-like GaN substrate J. T. Hsu, J. D. Tsay, Y. D. Guo, C. C. Chuo, and S. M. Pan (b) Epitaxial growth of AlInGaN alloys grown by metalorganic chemical vapor deposition Je Won Kim, Kyu Han Lee, and Sunwoon Kim (c) Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN Mio Suzuki, T. Sato, T. Suemasu, and F. Hasegawa (a) Cafhodoluminescence of polycrystalline GaN grown by a hot wall epitaxy technique Y. Inoue, T. Hoshino, S. Takeda, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi, and S. Sakakibara (b) The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer Yong Suk Cho, Jeakyun Kim, Young Ju Park, Hyunseok Na, Hee Jin Kim, Hyun Jin Kim, Euijoon Yoon, and Young Woon Kim (b) The influence of aluminum composition of Al/Ja^^As in distributed Bragg reflector on surface morphology B. Kim, M. Yoon, S.Kim, J. Son, B.Kim, J.Jhin, and D.Byun (b) Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air-bridged lateral epitaxial growth Akihiko Ishibashi, Yasutoshi Kawaguchi, Gaku Sugahara, Toshitaka Shimamoto, Toshiya Yokogawa, Yoichi Yamada, Yusuke Ueki, Kohzo Nakamura, and Tsunemasa Taguchi (b) Electrochemical CV-profiling of GaN T. Wolff, M. Rapp, and T. Rotter (c) Quantitative evaluation of the atomic structure of defects and composition fluctuations at the nanometer scale inside InGaN/GaN heterostructures P. Ruterana, P. Singh, S. Kret, G. Jurczak, G. Maciejewski, P. Dluzewski, H. K. Cho, R. J. Choi, H. J. Lee, and E. K. Suh (b) Highly luminescent cubic GaN microcrystals grown on GaAs(OOl) substrates by RF-MBE Ryuji Katayama, Kentaro Onabe, and Yasuhiro Shiraki (b) Quantum chemical study on substituent effect of gas-phase reactions in III-V nitride semiconductor crystal growth Takanobu Okada, Kentaro Doi, Koichi Nakamura, and Akitomo Tachibana (b) High-power GaN light-emitting diodes with patterned copper substrates by electroplating R. H. Horng, C. E. Lee, S. C. Hsu, S. H. Huang, C. C. Wu, C. Y. Kung, and D. S. Wuu.. (a)

7 2388 Contents Built-in electric field at cubic GaN/GaAs(001) heterointerfaces investigated by phase-selected photoreflectance excitation Ryuji Katayama, Kentaro Onabe, and Yasuhiro Shiraki (b) Properties of various ion-implanted sapphire substrates for GaN epilayers J. Jhin, J. Lee, D. Byun, J. S. Lee, J. H. Lee, C. Kim, H. Lee, Y. Moon, and E. Koh... (a) Stimulated emission from GaN nanocolumns Akihiko Kikuchi, Kouji Yamano, Makoto Tada, and Katsumi Kishino (b) Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics Suk-Hun Lee, Hyun-Hwi Lee, Jong-Jae Jung, Young-Bu Moon, Tae Hoon Kim, Jong Hyeob Baek, and Young Moon Yu (a) Vertical Bridgman growth and annealing effect of Bi doped ZnSe single crystal C. B. Oh, J. F. Wang, and M. Isshiki (c) Impurity band in magnesium-doped GaN layers grown by metalorganic chemical vapor deposition D. S. Kang, M. G. Cheong, S.-K. Lee, E.-K. Suh, C.-H. Hong, and H. J. Lee (b) Suppression of cracks and V-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers H. S. Cheong, T. V. Cuong, H. G. Kim, J. Y. Park, C. S. Kim, C.-H. Hong, J. H. Baek, S. H. Lee, T.H.Kim, and Y. M. Yu (a) Direct heteroepitaxial lateral overgrowth of GaN on stripe-patterned sapphire substrates with very thin SiO2 masks H. S. Cheong, M. K. Yoo, H. G. Kim, S. J. Bae, C. S. Kim, C.-H. Hong, J. H. Baek, H. J. Kim, Y. M. Yu, and H. K. Cho (b) Growth and annealing conditions of high Al-content p-type AlGaN for deep-uv LEDs Toshiyuki Obata, Hideki Hirayama, Yoshinobu Aoyagi, and Koji Ishibashi (a) Nano and quantum structures White light emitting silicon nanocrystals as nanophosphor Soojin Lee, Woon Jo Cho, II Ki Han, Won Jun Choi, and Jung II Lee (b) Metal/GaN reaction chemistry and their electrical properties C. C. Kim, S. K. Seol, J. K. Kim, J.-L. Lee, Y. Hwu, P. Ruterana, G. Magaritondo, andj.h. Je (b) Radiative recombination processes in Alo.o7Gao.93N/GaN multiple quantum well structures, role of hole localisation B. Monemar, H. Haratizadeh, P. P. Paskov, J. P. Bergman, E. Valcheva, B. Arnaudov, A. Kasic, P. O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki... (c) Gallium nitride nanowires with a metal initiated metal-organic chemical vapor deposition (MOCVD) approach Sang-Kwon Lee, Heon-Jin Choi, Peter Pauzauskie, Peidong Yang, Nam-Kyu Cho, Hyo-Derk Park, Eun-Kyung Suh, Kee-Young Lim, and Hyung-Jae Lee (b) Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AIN quantum dots S. Kalliakos, T. Bretagnon, P. Lefebvre, S. Juillaguet, T. Taliercio, T. Guillet, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne, andj. Massies (b) Properties of self-assembled Ga-polar and N-polar GaN/AIN quantum dots N. Gogneau, E. Monroy, F. Fossard, B. Gayral, S. Monnoye, H. Mank, and B. Daudin.. (c) Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off Tongjun Yu, Zilan Li, Z. X. Qin, Z. Z. Chen, Z. J. Yang, X. D. Hu, and G. Y. Zhang... (b)

8 Contents 2389 Structural and optical properties of rare-earth doped quantum dots grown by plasma-assisted MBE Y. Hori, T. Andreev, D. Jalabert, X. Biquard, E. Monroy, M. Tanaka, O. Oda, Le Si Dang, andb. Daudin (b) Optical characterization of InAsN single quantum wells grown by RF-MBE M. Kuroda, R. Katayama, K. Onabe, and Y. Shiraki (b) Time-resolved gain saturation dynamics in InGaN multi-quantum well structures K. Kyhm, J. D. Smith, R. A. Taylor, J. F. Ryan, and Y. Arakawa (c) Optical spectra of GaN/InGaN/GaN MQW structure grown on a (1101) GaN facet Eun-Hee Kim, Tetsuo Narita, Yoshio Honda, and Nobuhiko Sawaki (c) Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells H.T. Grahn (b) Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy Hwa-Mok Kim, Hosang Lee, Suk II Kim, Sung Ryong Ryu, Tae Won Kang, and Kwan Soo Chung (b) UV photoluminescence from GaN self-assembled quantum dots on Al^Ga^JSf surfaces grown by metalorganic chemical vapor deposition K. Hoshino and Y. Arakawa (c) Narrow high-energy emission lines in high-resolution near-field spectroscopy on GalnN/GaN quantum wells F. Hitzel, G. Klewer, S. Lahmann, U. Rossow, and A. Hangleiter (c) Towards understanding the emission efficiency of nitride quantum wells A. Hangleiter, D. Fuhrmann, M. Grewe, F. Hitzel, G. Klewer, S. Lahmann, C. Netzel, N. Riedel, and U. Rossow (a) Fabrication of GaN nanocrystallites and their application to UV/blue electroluminescent devices Tohru Honda, Miwako Akiyama, Shinichi Egawa, Yohta Aoki, Naoyuki Obinata, and Hideo Kawanishi (a) First-principle study on electronic properties of gallium nitride and aluminium nitride nanowires Kentaro Doi, Nobuyuki Higashimaki, Yoshihiko Kawakami, Koichi Nakamura, and Akitomo Tachibana (b) Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy J. S. Kim, E. K. Kim, H. J. Kim, E. Yoon, I.-W. Park, and Y. J. Park (b) Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading S.-Y. Kwon, M.-H. Cho, P. Moon, H. J. Kim, H. Na, H.-C. Seo, H. J. Kim, Y. Shin, D. W. Moon, Y. Sun, Y.-H. Cho, and E. Yoon (a) Emission properties and thermal annealing of InGaN/GaN multiple quantum wells with different protection layers H. K. Cho, T. E. Park, D. C. Kim, J. E. Shin, and J. S. Lee (b) Contacts Low resistance and highly reflective Cu-Ni solid solution/ag ohmic contacts to p-gan for flip-chip light emitting diodes Dong-Seok Leem, June-O. Song, J. S. Kwak, J. Cho, H. Kim, O. H. Nam, Y. Park, and Tae-Yeon Seong (a) Nano-dot addition effect on the electrical properties of Ni contacts to p-type GaN Jung Inn Sohn, June-O Song, Dong-Seok Leem, Seonghoon Lee, and Tae-Yeon Seong.. (c) Thermal stability of Ni/Ag contacts on p-type GaN Z. Hassan, Y. C. Lee, F. K. Yam, Z. J. Yap, N. Zainal, H. Abu Hassan, and K. Ibrahim.. (c) Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN J. Yan, M. J. Kappers, A. Crossley, C. McAleese, W. A. Phillips, and C. J. Humphreys.. (b)

9 2390 Contents Study of as deposited metal contacts for n-sic M. Jetter, A. Ivanov, R. Harle, H. Grabeldinger, and H. Schweizer (c) High transparency low resistance oxidized Ni/Au-ZnO contacts to p-gan for high performance LED applications Sung-Pyo Jung, Chien-Hung Lin, Hon Man Chan, Zhiyong Fan, J. Grace Lu, andhenryp.lee (a) The role of sub-contact layers in the optimization of low-resistivity contacts to p-type GaN J. Dennemarck, T. Bottcher, S. Figge, S. Einfeldt, R. Kroger, D. Hommel, E. Kaminska, W. Wiatroszak, and A. Piotrowska (c) Ohmic contacts for high power LEDs Ho Won Jang, Jong Kyu Kim, Soo Young Kim, Hak Ki Yu, and Jong-Lam Lee (a) Zinc oxide Growth of phosphorus doped ZnO thin films by pulsed laser deposition Veeramuthu Vaithianathan, Byung-Teak Lee, and Sang Sub Kim (a) Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques T. Koida, A. Uedono, A. Tsukazaki, T. Sota, M. Kawasaki, and S. F. Chichibu (a) Substrate effects on the heteroepitaxial growth of ZnO thin films by pulsed laser deposition Sang Sub Kim, Jung Ho Je, and Jin Hyeok Kim (c) MBE growth of Zn-polar ZnO on MOCVD-ZnO templates Hiroyuki Kato, Michihiro Sano, Kazuhiro Miyamoto, Takafumi Yao, Bao-Ping Zhang, Katsuki Wakatsuki, and Yusaburo Segawa (b) Optical and electrical properties of ZnO doped with nitrogen Seungmo Kang, Kyoungchul Shin, Kandasamy Prabakar, and Chongmu Lee (b) Comparison of ECR plasma pretreatment techniques for ZnO atomic layer epitaxy on the sapphire substrate Kyoungchul Shin and Chongmu Lee (c) Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy O. H. Roh, Y. Tomita, M. Ohsugi, X. Wang, Y. Ishitani, and A. Yoshikawa (b) Investigation on visible emission control of ZnO thin film Hong Seong Kang, Jeong Seok Kang, Jae Won Kim, and Sang Yeol Lee (c) Structural and optical properties of ZnO nanowires synthesized with different catalysts and substrate pre-treatments M. Senthil Kumar, T. Y. Kim, J. Y. Kim, E.-K. Suh, and K. S. Nahm (c) Indium nitride and indium rich InGaN High mobility InN films grown by metal-organic vapor phase epitaxy Chin-An Chang, Chuan-Feng Shih, Nai-Chuan Chen, Pen-Hsiu Chang, and Kuo-Shiun Liu (c) Epitaxial growth of hexagonal and cubic InN films K. Nishida, Y. Kitamura, Y. Hijikata, H. Yaguchi, and S. Yoshida (b) Pulse laser assisted MOVPE for InGaN with high indium content Norihito Kawaguchi, Ken-nosuke Hida, Yoshihiro Kangawa, Yoshinao Kumagai, and Akinori Koukitu (a) Growth and characterization of InGaN double heterostructures for optical devices at mm communication wavelengths Tatsuo Ohashi, Tetsuya Kouno, Mizue Kawai, Akihiko Kikuchi, and Katsumi Kishino.. (a)

10 Contents 2391 Growth and properties of In-rich InGaN films grown on (0001) sapphire by RF-MBE M. Kurouchi, T. Araki, H. Naoi, T. Yamaguchi, A. Suzuki, and Y. Nanishi (b) Properties of the fundamental absorption edge of InN crystals investigated by optical reflection and transmission spectra Y. Ishitani, K. Xu, S. B. Che, H. Masuyama, W. Terashima, M. Yoshitani, N. Hashimoto, K. Akasaka, T. Ohkubo, and A. Yoshikawa (b) Others Magnetic properties of GaMnN grown via molecular beam epitaxy using a single precursor K. J. Lee, K. H. Kim, F. C. Yu, W. S. Im, C. X. Gao, D. J. Kim, H. J. Kim, and Y. E. Dim. (b) Structural and optical properties of Mg^Zn^O thin films formed by sol-gel method T. Murakawa, T. Fukudome, T. Hayashi, H. Isshiki, and T. Kimura (c) A study of magnetic clusters in Co-doped ZnO using neutron scattering Hyeon-Jun Lee, Gi-Hun Ryu, Sung-Kyu Kim, Shin Ae Kim, Chang-Hee Lee, Se-Young Jeong, and Chae Ryong Cho (b) Computational fluid dynamics on gaseous and surface chemistry of GaN-MOVPE system for various pressures K. Kusakabe, A. Hirako, S. Tanaka, and K. Ohkawa (c) Batch reactive ion etching of gallium nitride using photoresist as a mask Mark Dineen, Sean Lee, Ligang Deng, Andrew L. Goodyear, and Colin Welch (c) Electron beam induced light emission from the polythiophene derivative/ito structure Gennady N. Panin, Tae Won Kang, and Haiwon Lee (b) Effects of microlens curvature on the operation of microlens-integrated extended cavity GaN VCSELs Si-Hyun Park and Heonsu Jeon (a) Author Index 2577 physica status solidi (c) is indexed in Cambridge Scientific Abstracts; Chemical Abstracts; Engineering Index Compendex; INSPEC; Physics Abstracts; ISI Index to Scientific & Technical Proceedings; OCLC WorldCat; PASCAL; ARTICLE@INIST; VINITI. DOI: The fastest way to find an article online is the Digital Object Identifier (DOI). DOIs are printed in the header of the first page of every article. On the WWW, one can find an article for example with a DOI of /pssc at Please use the DOI of the article to link from your home page to the articles in Wiley Interscience. The DOI is a system for the persistent identification of documents on digital networks, see