Sony PMW-F55 CineAlta 4K PMW Series HD Super 35 mm Digital Motion Camera with Global Shutter CMOS Image Sensor. Module 3: Planar Pixel Analysis
|
|
|
- Milton Boyd
- 7 years ago
- Views:
Transcription
1 Sony PMW-F55 CineAlta 4K PMW Series HD Super 35 mm Digital Motion Camera with Global Shutter CMOS Image Sensor Module 3: Planar Pixel Analysis
2 Sony PMW-F55 CineAlta 4K HD Super 35 mm Digital Motion Camera 2 Some of the information in this report may be covered by patents, mask and/or copyright protection. This report should not be taken as an inducement to infringe on these rights. Chipworks Inc all rights reserved. Chipworks and the Chipworks logo are registered trademarks of Chipworks Inc. This report is provided exclusively for the use of the purchasing organization. It can be freely copied and distributed within the purchasing organization, conditional upon the accompanying Chipworks accreditation remaining attached. Distribution of the entire report outside of the purchasing organization is strictly forbidden. The use of portions of the document for the support of the purchasing organization s corporate interest (e.g., licensing or marketing activities) is permitted, as defined by the fair use provisions of the copyright act. Accreditation to Chipworks must be attached to any portion of the reproduced information. IPR CYSDW Revision 2.0 Published: September 30, 2013 Revision 2.0 Published: November 15, 2013
3 Sony PMW-F55 CineAlta 4K HD Super 35 mm Digital Motion Camera 3 Table of Contents (all Modules) Module 1: Overview Analysis Introduction, Device Summary, Product Teardown, Die Photograph, Die Features Module 2: Die Utilization, Basic Functionality Analysis Annotated Metal 1 Die Photograph, Die Utilization Analysis, Standard Logic Cell Size, SRAM Cell Size Module 3: Planar Pixel Analysis Pixel Design Summary, Pixel Schematic, Pixel Bevel SEM Analysis, Related Horizontal Pixel Dimensions Module 4: Pixel Cross-Sectional Analysis Pixel Process Summary, Pixel Horizontal and Vertical Cross-Sectional SEM Analyses, TEM Analysis of a Pixel Transistor and Gate Oxide, Related Pixel Dimensions Module 5: Substrate Dopant Analysis Pixel Bevel SCM Analysis, Pixel Cross-Sectional SCM Analysis, SIMS of Pixel Substrate, SCM Analyses of Peripheral Substrate Module 6: Peripheral Cross-Sectional and Process Analysis SEM and TEM Analyses of General Structure, Dielectrics, Metals, Vias and Contacts, Column Capacitors, MOS Transistors, Isolation, Results of SEM and TEM-EDS Analyses (BSI Process Features, if present)
4 Sony PMW-F55 CineAlta 4K HD Super 35 mm Digital Motion Camera 4 Table of Contents Introduction Device Identification Microlens Array Tilt View Microlens Array and Color Filter Array Plan View Pixel Array Corner Plan View Shared Pixel Schematic Shared Pixel Horizontal Dimensions Pixel Overview Metal 4 Through Polysilicon and Diffusion Layers (W shield Layer Not Shown) Pixel Array at Lenses and Color Filters Pixels at Metal 4 Pixels at Metal 3 Pixels at Metal 2 Pixels at Metal 1 Pixels at Metal 0 Light Shield Pixels at Polysilicon Layer Pixels at Polysilicon Layer Overview Pixels at Diffusion Dark Pixel Transitions Metal 4 Dark Pixel Transitions Metal 3 Dark Pixel Transitions Metal 2 Dark Pixel Transitions Metal 1 Dark Pixel Transitions Metal 0 and Polysilicon Statement of Measurement Uncertainty and Scope Variation About Chipworks
5 Sony PMW-F55 CineAlta 4K HD Super 35 mm Digital Motion Camera 28 About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at Chipworks 3685 Richmond Road, Suite 500 Ottawa, Ontario K2H 5B7 Canada T F Web site: info@chipworks.com Please send any feedback to feedback@chipworks.com
InvenSense MPU-6515 6-Axis Accelerometer Gyroscope MEMS Motion Sensor
InvenSense MPU-6515 6-Axis Accelerometer Gyroscope MEMS Motion Sensor 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: 613-829-0414 www.chipworks.com Some of the information in this report
Qualcomm QCA6174 802.11ac Wi-Fi 2x2 MIMO Combo SoC
Qualcomm QCA6174 Basic Functional Analysis 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: 613-829-0414 www.chipworks.com Basic Functional Analysis 2 Some of the information in this report
Apple/AuthenTec TMDR92 iphone 5s, 6, and 6 Plus Fingerprint Sensor
Apple/AuthenTec TMDR92 iphone 5s, 6, and 6 Plus Fingerprint Sensor 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: 613.829.0414 www.chipworks.com Some of the information in this report may
Micron MT9D111 2 Megapixel CMOS Image Sensor Functional Analysis
March 17, 2006 Micron MT9D111 2 Megapixel CMOS Image Sensor Functional Analysis For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor
Intel Q3GM ES 32 nm CPU (from Core i5 660)
Intel Q3GM ES Structural Analysis For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor and electronics technology, please call
Winbond W971GG6JB-25 1 Gbit DDR2 SDRAM 65 nm CMOS DRAM Process
Winbond W971GG6JB-25 1 Gbit DDR2 SDRAM 65 nm CMOS DRAM Process Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor
Atmel. MXT224 Touch Screen Controller. Circuit Analysis of Charge Integrator, ADC, and I/O Blocks
Atmel MXT224 Touch Screen Controller Circuit Analysis of Charge Integrator, ADC, and I/O Blocks For questions, comments, or more information about this report, or for any additional technical needs concerning
Micron MT29F2G08AAB 2 Gbit NAND Flash Memory Structural Analysis
August 17, 2006 Micron MT29F2G08AAB 2 Gbit NAND Flash Memory Structural Analysis For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor
NXP PN548 (65V10) Near Field Communication Module
NXP PN548 (65V10) Module Basic Functional Analysis 1891 Robertson Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: 613-829-0414 chipworks.com Basic Functional Analysis 2 Some of the information in this
AMD AXDA3000DKV4D Athlon TM XP Microprocessor Structural Analysis
September 22, 2004 AMD AXDA3000DKV4D Athlon TM XP Microprocessor Structural Analysis Table of Contents Introduction... Page 1 List of Figures... Page 2 Device Identification Major Microstructural Analysis
AMD/ATI 215-0754009-00 RV840 Juniper GPU (from Radeon TM HD 5750 Graphics Card)
AMD/ATI 215-0754009-00 RV840 Juniper GPU (from Radeon TM HD 5750 Graphics Card) Circuit Analysis of GDDR5 I/O Drivers, Receivers, DLL, and PLL Table of Contents 3685 Richmond Road, Suite 500, Ottawa, ON
Sample Project List. Software Reverse Engineering
Sample Project List Software Reverse Engineering Automotive Computing Electronic power steering Embedded flash memory Inkjet printer software Laptop computers Laptop computers PC application software Software
The MOSFET Transistor
The MOSFET Transistor The basic active component on all silicon chips is the MOSFET Metal Oxide Semiconductor Field Effect Transistor Schematic symbol G Gate S Source D Drain The voltage on the gate controls
Winbond W2E512/W27E257 EEPROM
Construction Analysis Winbond W2E512/W27E257 EEPROM Report Number: SCA 9703-533 Global Semiconductor Industry the Serving Since 1964 15022 N. 75th Street Scottsdale, AZ 85260-2476 Phone: 602-998-9780 Fax:
CCD and CMOS Image Sensor Technologies. Image Sensors
CCD and CMOS Image Sensor Technologies Image Sensors There are Two Main types of Image Sensors are available today: CCD and CMOS Both were originally developed in the late 1960 s and 1970 s Defining Some
Sony's "Beyond 4K" solutions bring museum visual exhibits into the next generation
MUSEUM Sony's "Beyond 4K" solutions bring museum visual exhibits into the next generation Overview With Beyond 4K solution, versatile high-resolution video meets the challenge of presenting works of truth
Advantage of the CMOS Sensor
- TECHNICAL DOCUMENTATION Advantage of the CMOS Sensor Contents 1. Introduction...2 2. Comparing CCD & CMOS...2 3. CMOS Sensor Exmor...3 4. New Wide-D Technology Using High-speed Readout of the CMOS Sensor
AN3359 Application note
Application note Low cost PCB antenna for 2.4GHz radio: Meander design 1 Introduction This application note is dedicated to the STM32W108 product family from STMicroelectronics. One of the main reasons
The State-of-the-Art in IC Reverse Engineering
The State-of-the-Art in IC Reverse Engineering Randy Torrance and Dick James Chipworks Inc. 3685 Richmond Road, Ottawa, Ontario, Canada K2H 5B7 rtorrance@chipworks.com, djames@chipworks.com Abstract. This
How an electronic shutter works in a CMOS camera. First, let s review how shutters work in film cameras.
How an electronic shutter works in a CMOS camera I have been asked many times how an electronic shutter works in a CMOS camera and how it affects the camera s performance. Here s a description of the way
Layout and Cross-section of an inverter. Lecture 5. Layout Design. Electric Handles Objects. Layout & Fabrication. A V i
Layout and Cross-section of an inverter Lecture 5 A Layout Design Peter Cheung Department of Electrical & Electronic Engineering Imperial College London V DD Q p A V i V o URL: www.ee.ic.ac.uk/pcheung/
ECE 410: VLSI Design Course Introduction
ECE 410: VLSI Design Course Introduction Professor Andrew Mason Michigan State University Spring 2008 ECE 410, Prof. A. Mason Lecture Notes Page i.1 Age of electronics microcontrollers, DSPs, and other
Displays. Cathode Ray Tube. Semiconductor Elements. Basic applications. Oscilloscope TV Old monitors. 2009, Associate Professor PhD. T.
Displays Semiconductor Elements 1 Cathode Ray Tube Basic applications Oscilloscope TV Old monitors 2 1 Idea of Electrostatic Deflection 3 Inside an Electrostatic Deflection Cathode Ray Tube Gun creates
SolarEdge Site Mapping Tool Software Guide
1 2 Important Notice Copyright 2011 SolarEdge Inc. All rights reserved. No part of this document may be reproduced, stored in a retrieval system or transmitted, in any form or by any means, electronic,
Advanced VLSI Design CMOS Processing Technology
Isolation of transistors, i.e., their source and drains, from other transistors is needed to reduce electrical interactions between them. For technologies
E70 Rear-view Camera (RFK)
Table of Contents (RFK) Subject Page Introduction..................................................3 Rear-view Camera..............................................3 Input/Output...................................................4
Solar Photovoltaic (PV) Cells
Solar Photovoltaic (PV) Cells A supplement topic to: Mi ti l S Micro-optical Sensors - A MEMS for electric power generation Science of Silicon PV Cells Scientific base for solar PV electric power generation
Intel s Revolutionary 22 nm Transistor Technology
Intel s Revolutionary 22 nm Transistor Technology Mark Bohr Intel Senior Fellow Kaizad Mistry 22 nm Program Manager May, 2011 1 Key Messages Intel is introducing revolutionary Tri-Gate transistors on its
OmniBSI TM Technology Backgrounder. Embargoed News: June 22, 2009. OmniVision Technologies, Inc.
OmniBSI TM Technology Backgrounder Embargoed News: June 22, 2009 OmniVision Technologies, Inc. At the heart of any digital camera lies the image sensor. The image sensor is an integrated circuit, like
Lecture Notes 3 Introduction to Image Sensors
Lecture Notes 3 Introduction to Image Sensors EE 392B Handout #5 Prof. A. El Gamal Spring 01 CCDs basic operation well capacity charge transfer efficiency and readout speed CMOS Passive Pixel Sensor (PPS)
White paper. CCD and CMOS sensor technology Technical white paper
White paper CCD and CMOS sensor technology Technical white paper Table of contents 1. Introduction to image sensors 3 2. CCD technology 4 3. CMOS technology 5 4. HDTV and megapixel sensors 6 5. Main differences
1.Introduction. Introduction. Most of slides come from Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda.
.Introduction If the automobile had followed the same development cycle as the computer, a Rolls- Royce would today cost $00, get one million miles to the gallon and explode once a year Most of slides
How To Scale At 14 Nanomnemester
14 nm Process Technology: Opening New Horizons Mark Bohr Intel Senior Fellow Logic Technology Development SPCS010 Agenda Introduction 2 nd Generation Tri-gate Transistor Logic Area Scaling Cost per Transistor
Semiconductor Memories
Semiconductor Memories Semiconductor memories array capable of storing large quantities of digital information are essential to all digital systems Maximum realizable data storage capacity of a single
Digital Image Requirements for New Online US Visa Application
Digital Image Requirements for New Online US Visa Application As part of the electronic submission of your DS-160 application, you will be asked to provide an electronic copy of your photo. The photo must
Module 7 : I/O PADs Lecture 33 : I/O PADs
Module 7 : I/O PADs Lecture 33 : I/O PADs Objectives In this lecture you will learn the following Introduction Electrostatic Discharge Output Buffer Tri-state Output Circuit Latch-Up Prevention of Latch-Up
Introduction to VLSI Fabrication Technologies. Emanuele Baravelli
Introduction to VLSI Fabrication Technologies Emanuele Baravelli 27/09/2005 Organization Materials Used in VLSI Fabrication VLSI Fabrication Technologies Overview of Fabrication Methods Device simulation
Design of Prototype Scientific CMOS Image Sensors
PRE-PRINT: SPIE Astronomical Telescopes and Instrumentation, 23-28 June 2008, Marseille, France Paper #7021-2 to be published in Proceedings of SPIE Vol. 7021 Design of Prototype Scientific CMOS Image
LIST OF CONTENTS CHAPTER CONTENT PAGE DECLARATION DEDICATION ACKNOWLEDGEMENTS ABSTRACT ABSTRAK
vii LIST OF CONTENTS CHAPTER CONTENT PAGE DECLARATION DEDICATION ACKNOWLEDGEMENTS ABSTRACT ABSTRAK LIST OF CONTENTS LIST OF TABLES LIST OF FIGURES LIST OF NOTATIONS LIST OF ABBREVIATIONS LIST OF APPENDICES
Signal Conditioning Piezoelectric Sensors
Application Report SLOA033A - September 2000 Signal Conditioning Piezoelectric Sensors James Karki Mixed Signal Products ABSTRACT Piezoelectric elements are used to construct transducers for a vast number
Lecture 030 DSM CMOS Technology (3/24/10) Page 030-1
Lecture 030 DSM CMOS Technology (3/24/10) Page 030-1 LECTURE 030 - DEEP SUBMICRON (DSM) CMOS TECHNOLOGY LECTURE ORGANIZATION Outline Characteristics of a deep submicron CMOS technology Typical deep submicron
Intel Modular Server System MFSYS25
Intel Modular Server System MFSYS25 Intel Modular Server Control OEM Branding December 5, 2007 Enterprise Platforms and Services Division 2 Intel Modular Server System MFSYS25 Intel Modular Server Control
Development of High-Performance ASV-LCDs Using Continuous Pinwheel Alignment (CPA) Mode
Development of High-Performance ASV-LCDs Using Continuous Pinwheel Alignment (CPA) Mode Masumi Kubo * Toshihiko Miyashita *2 Nobuyoshi Nagashima *3 Eiichiroh Nishimura *4 * A30 Project Team, TFT Liquid
Fabrication and Manufacturing (Basics) Batch processes
Fabrication and Manufacturing (Basics) Batch processes Fabrication time independent of design complexity Standard process Customization by masks Each mask defines geometry on one layer Lower-level masks
Source. Gate N+ N+ N+ Drain. Figure 1 Structure of D Series (Vertical type) (N channel) Channel. Source. Drain. Gate N N+ N+ P+ Substrate
ower MOS FET R07ZZ0007EJ0200 (revious: REJ27G0014-0100) Rev.2.00 Renesas has two types of ower MOS FETs, D Series (vertical structure) and S Series (lateral structure), as shown in Figure 1 and Figure
Tuesday 20 May 2014 Morning
Tuesday 20 May 2014 Morning AS GCE PHYSICS B (ADVANCING PHYSICS) G491/01 Physics in Action *1203458796* Candidates answer on the Question Paper. OCR supplied materials: Data, Formulae and Relationships
CAPACITIVE SENSING MADE EASY, Part 2 Design Guidelines
CAPACITIVE SENSING MADE EASY, Part 2 Design Guidelines By Pushek Madaan and Priyadeep Kaur, Cypress Semiconductor Corp. When it comes to capacitive sensing design, layout plays a crucial role. Giving importance
Why Have Intellectual Property?
Intellectual Property: Protecting Your Ideas James J. Pohl Timothy A. Doyle April 23, 2009 Why Have Intellectual Property? To protect ideas and expressions and to promote investments in these activities
HI-200, HI-201. Features. Dual/Quad SPST, CMOS Analog Switches. Applications. Ordering Information. Functional Diagram FN3121.9
Data Sheet FN3121.9 Dual/Quad SPST, CMOS Analog Switches HI-200/HI-201 (dual/quad) are monolithic devices comprising independently selectable SPST switches which feature fast switching speeds (HI-200 240ns,
Windows Embedded Security and Surveillance Solutions
Windows Embedded Security and Surveillance Solutions Windows Embedded 2010 Page 1 Copyright The information contained in this document represents the current view of Microsoft Corporation on the issues
Graduate Student Presentations
Graduate Student Presentations Dang, Huong Chip packaging March 27 Call, Nathan Thin film transistors/ liquid crystal displays April 4 Feldman, Ari Optical computing April 11 Guerassio, Ian Self-assembly
Understanding Network Video Security Systems
Understanding Network Video Security Systems Chris Adesanya Panasonic System Solutions Company adesanyac@us.panasonic.com Introduction and Overview This session will provide vendor neutral introduction
Memory Basics. SRAM/DRAM Basics
Memory Basics RAM: Random Access Memory historically defined as memory array with individual bit access refers to memory with both Read and Write capabilities ROM: Read Only Memory no capabilities for
ELEC 3908, Physical Electronics, Lecture 15. BJT Structure and Fabrication
ELEC 3908, Physical Electronics, Lecture 15 Lecture Outline Now move on to bipolar junction transistor (BJT) Strategy for next few lectures similar to diode: structure and processing, basic operation,
Grasshopper3 U3. Point Grey Research Inc. 12051 Riverside Way Richmond, BC Canada V6W 1K7 T (604) 242-9937 www.ptgrey.com
Grasshopper3 U3 USB 3.0 Camera Imaging Performance Specification Version 12.0 Point Grey Research Inc. 12051 Riverside Way Richmond, BC Canada V6W 1K7 T (604) 242-9937 www.ptgrey.com Copyright 2012-2015
Carl Zeiss Vario-Tessar T* FE 4/24-70 ZA OSS Review. E.J. Peiker
Carl Zeiss Vario-Tessar T* FE 4/24-70 ZA OSS Review by E.J. Peiker The Carl Zeiss Vario-Tessar T* FE 4/24-70 ZA OSS lens, henceforth to be called the Zeiss 24-70, is a Sony E mount lens designed for the
Video surveillance camera Installation Guide
Video surveillance camera Installation Guide TV7085 TV7086 TV7087 TV7088 14 1. Preface Dear Customer, Thank you for purchasing this Eyseo digital surveillance camera. You made the right decision in choosing
RAM & ROM Based Digital Design. ECE 152A Winter 2012
RAM & ROM Based Digital Design ECE 152A Winter 212 Reading Assignment Brown and Vranesic 1 Digital System Design 1.1 Building Block Circuits 1.1.3 Static Random Access Memory (SRAM) 1.1.4 SRAM Blocks in
TSL213 64 1 INTEGRATED OPTO SENSOR
TSL 64 INTEGRATED OPTO SENSOR SOES009A D4059, NOVEMBER 99 REVISED AUGUST 99 Contains 64-Bit Static Shift Register Contains Analog Buffer With Sample and Hold for Analog Output Over Full Clock Period Single-Supply
Class 18: Memories-DRAMs
Topics: 1. Introduction 2. Advantages and Disadvantages of DRAMs 3. Evolution of DRAMs 4. Evolution of DRAMs 5. Basics of DRAMs 6. Basics of DRAMs 7. Write Operation 8. SA-Normal Operation 9. SA-Read Operation
Introduction to Digital System Design
Introduction to Digital System Design Chapter 1 1 Outline 1. Why Digital? 2. Device Technologies 3. System Representation 4. Abstraction 5. Development Tasks 6. Development Flow Chapter 1 2 1. Why Digital
AND9190/D. Vertical Timing Optimization for Interline CCD Image Sensors APPLICATION NOTE
Vertical Timing Optimization for Interline CCD Image Sensors APPLICATION NOTE Introduction This application note applies to the ON Semiconductor Interline CCD Image Sensors listed in Table 1. On these
1024 x 1280 pixel dual shutter APS for industrial vision
Paper presented at SPIE Electronic Imaging, Santa Clara, 22 Jan 2003 p.1/5 1024 x 1280 pixel dual shutter APS for industrial vision Herman Witters, Tom Walschap, uy Vanstraelen, enis Chapinal, uy Meynants,
digital backs www.hasselblad.com Cable free operation with all V System cameras including 202FA/203FE/205FCC cameras.
Hasselblad CFV digital backs are custom built to match the design and functionality of Hasselblad V cameras. They are the perfect modern complement to the V system, so much admired, used and trusted around
Application Note Dual SIM connection
Application Note Dual SIM connection CE The product described in this manual conforms to the TTE directive 91/263/EEC and EMC directive 89/336/EEC. The product fulfils the requirements according to ETS
ISSCC 2003 / SESSION 9 / TD: DIGITAL ARCHITECTURE AND SYSTEMS / PAPER 9.3
ISSCC 2003 / SESSION 9 / TD: DIGITAL ARCHITECTURE AND SYSTEMS / PAPER 9.3 9.3 Ultra-High Resolution Image Capturing and Processing for Digital Cinematography Albert Theuwissen 1, John Coghill, Lucian Ion,
Introduction to CMOS VLSI Design
Introduction to CMOS VLSI esign Slides adapted from: N. Weste,. Harris, CMOS VLSI esign, Addison-Wesley, 3/e, 24 Introduction Integrated Circuits: many transistors on one chip Very Large Scale Integration
EL DORADO UNION HIGH SCHOOL DISTRICT Educational Services COURSE OF STUDY/CONTENT STANDARDS INFORMATION PAGE
COURSE OF STUDY/CONTENT STANDARDS INFORMATION PAGE Course Title: DIGITAL IMAGING (Course #635) Rationale: Course Description: A school-to-career course for the digital artist. Students learn industrial
Getting Started: Creating the Backdrop
Adding ipad Animations to Green Screen Videos: Step 1 Getting Started: Creating the Backdrop 1. To start a new project: b. Select the + symbol on the top right of the screen. 2. To add a static background
Jerry Haynes Law registered patent attorney
Jerry Haynes Law registered patent attorney 2 North Oakdale Avenue Medford, OR 97501 Phone: (541) 494-1433 Fax: (206) 222-1641 www.jerryhayneslaw.com Located in Medford, Oregon, Jerry Haynes Law assists
How To Make A Thin Film Electroluminescent Display (Tfel) Display
displays for extreme conditions Continuing to make LEGENDS IN DISPLAY #1 in ALD thin film technology Proudly presenting our new name of Lumineq, the team behind the development and evolution of the world
Whitepaper. Image stabilization improving camera usability
Whitepaper Image stabilization improving camera usability Table of contents 1. Introduction 3 2. Vibration Impact on Video Output 3 3. Image Stabilization Techniques 3 3.1 Optical Image Stabilization 3
AT11805: Capacitive Touch Long Slider Design with PTC. Introduction. Features. Touch Solutions APPLICATION NOTE
Touch Solutions AT11805: Capacitive Touch Long Slider Design with PTC APPLICATION NOTE Introduction Slider is a one-dimensional sensor that detects the linear movement of a finger during touch. Sliders
SN54165, SN54LS165A, SN74165, SN74LS165A PARALLEL-LOAD 8-BIT SHIFT REGISTERS
The SN54165 and SN74165 devices SN54165, SN54LS165A, SN74165, SN74LS165A PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
AN900 APPLICATION NOTE
AN900 APPLICATION NOTE INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY INTRODUCTION by Microcontroller Division Applications An integrated circuit is a small but sophisticated device implementing several electronic
Digital Photography Composition. Kent Messamore 9/8/2013
Digital Photography Composition Kent Messamore 9/8/2013 Photography Equipment versus Art Last week we focused on our Cameras Hopefully we have mastered the buttons and dials by now If not, it will come
Accelerometer and Gyroscope Design Guidelines
Application Note Accelerometer and Gyroscope Design Guidelines PURPOSE AND SCOPE This document provides high-level placement and layout guidelines for InvenSense MotionTracking devices. Every sensor has
Amorphous Silicon Backplane with Polymer MEMS Structures for Electrophoretic Displays
Amorphous Silicon Backplane with Polymer MEMS Structures for Electrophoretic Displays J.H. Daniel 1, a, B.S. Krusor 1, N. Chopra 2, R.A. Street 1, P.M. Kazmaier 2, S.E. Ready 1, J.H. Ho 1 1 Palo Alto Research
Lecture 5: Gate Logic Logic Optimization
Lecture 5: Gate Logic Logic Optimization MAH, AEN EE271 Lecture 5 1 Overview Reading McCluskey, Logic Design Principles- or any text in boolean algebra Introduction We could design at the level of irsim
Salesforce Integration Guide
Salesforce Integration Guide Salesforce Integration Guide Document Publication Date: October 14, 2011 Copyright 2009-2011 BroadVision, Inc., 1600 Seaport Boulevard, Suite 550, North Building, Redwood City,
AN48. Application Note DESIGNNOTESFORA2-POLEFILTERWITH DIFFERENTIAL INPUT. by Steven Green. 1. Introduction AIN- AIN+ C2
Application Note DESIGNNOTESFORA2-POLEFILTERWITH DIFFERENTIAL INPUT by Steven Green C5 AIN- R3 C2 AIN C2 R3 C5 Figure 1. 2-Pole Low-Pass Filter with Differential Input 1. Introduction Many of today s Digital-to-Analog
Creating a Time-lapse Effect in Corel VideoStudio Pro
Creating a Time-lapse Effect in Corel VideoStudio Pro Mesmerize your audience by adding some drama to your movie using the Time-lapse effect in Corel VideoStudio Pro. This technique makes your video project
StarRC Custom: Next-Generation Modeling and Extraction Solution for Custom IC Designs
White Paper StarRC Custom: Next-Generation Modeling and Extraction Solution for Custom IC Designs May 2010 Krishnakumar Sundaresan Principal Engineer and CAE Manager, Synopsys Inc Executive Summary IC
PANAVISION Panalog After Effects Plugin
PANAVISION After Effects Plugin 1 st Edition Rev 1 (plugin version 1.2.2) Copyright Information Copyright 25 Panavision Inc. All rights reserved. This document is not permitted to be distributed by anyone
INDUSTRY BRIEFS FOR CREATIVE imedia
INDUSTRY BRIEFS FOR CREATIVE imedia Level 3 Assignment Briefs for Units 311, 312 & 313 Brining the curriculum to life: a partnership between NYBEP Ltd and the Dales Integrated Transport Alliance we are
Networking Remote-Controlled Moving Image Monitoring System
Networking Remote-Controlled Moving Image Monitoring System First Prize Networking Remote-Controlled Moving Image Monitoring System Institution: Participants: Instructor: National Chung Hsing University
SECURITY CAMERA INSTRUCTION MANUAL ENGLISH VERSION 1.0 LBC5451. www.lorextechnology.com
SECURITY CAMERA INSTRUCTION MANUAL ENGLISH VERSION 1.0 LBC5451 www.lorextechnology.com Contents 1x Camera and mounting stand 1x Power adapter 1x Mounting kit 1x Allen key 1x Screw cap 1x 60 ft. (18m)
Graphical displays are generally of two types: vector displays and raster displays. Vector displays
Display technology Graphical displays are generally of two types: vector displays and raster displays. Vector displays Vector displays generally display lines, specified by their endpoints. Vector display
Chapter 2 Sensors for Human Behavior Analysis
Chapter 2 Sensors for Human Behavior Analysis This chapter proposes a brief description of the most common sensors used in literature to perform the automatic analysis of the human behavior. For each kind
COURSE: PHYSICS DEGREE: COMPUTER ENGINEERING year: 1st SEMESTER: 1st
COURSE: PHYSICS DEGREE: COMPUTER ENGINEERING year: 1st SEMESTER: 1st WEEKLY PROGRAMMING WEE K SESSI ON DESCRIPTION GROUPS GROUPS Special room for LECTU PRAC session RES TICAL (computer classroom, audiovisual
HA-5104/883. Low Noise, High Performance, Quad Operational Amplifier. Features. Description. Applications. Ordering Information. Pinout.
HA5104/883 April 2002 Features This Circuit is Processed in Accordance to MILSTD 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Low Input Noise Voltage Density at 1kHz. 6nV/ Hz (Max)
Micro Power Generators. Sung Park Kelvin Yuk ECS 203
Micro Power Generators Sung Park Kelvin Yuk ECS 203 Overview Why Micro Power Generators are becoming important Types of Micro Power Generators Power Generators Reviewed Ambient Vibrational energy Radiant
Beyond Built-in: Why a Better Webcam Matters
Whitepaper: Beyond Built-in: Why a Better Webcam Matters How to Uplevel Your Ability to Connect, Communicate and Collaborate Using Your Laptop or PC Introduction The ability to virtually communicate and
STMicroelectronics. Deep Sub-Micron Processes 130nm, 65 nm, 40nm, 28nm CMOS, 28nm FDSOI. SOI Processes 130nm, 65nm. SiGe 130nm
STMicroelectronics Deep Sub-Micron Processes 130nm, 65 nm, 40nm, 28nm CMOS, 28nm FDSOI SOI Processes 130nm, 65nm SiGe 130nm CMP Process Portfolio from ST Moore s Law 130nm CMOS : HCMOS9GP More than Moore
Microlenses immersed in nematic liquid crystal with electrically. controllable focal length
Microlenses immersed in nematic liquid crystal with electrically controllable focal length L.G.Commander, S.E. Day, C.H. Chia and D.R.Selviah Dept of Electronic and Electrical Engineering, University College
ACE: After Effects CC
Adobe Training Services Exam Guide ACE: After Effects CC Adobe Training Services provides this exam guide to help prepare partners, customers, and consultants who are actively seeking accreditation as
A 10,000 Frames/s 0.18 µm CMOS Digital Pixel Sensor with Pixel-Level Memory
Presented at the 2001 International Solid State Circuits Conference February 5, 2001 A 10,000 Frames/s 0.1 µm CMOS Digital Pixel Sensor with Pixel-Level Memory Stuart Kleinfelder, SukHwan Lim, Xinqiao
HCF4001B QUAD 2-INPUT NOR GATE
QUAD 2-INPUT NOR GATE PROPAGATION DELAY TIME: t PD = 50ns (TYP.) at V DD = 10V C L = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V
Chapter 1 Introduction to The Semiconductor Industry 2005 VLSI TECH. 1
Chapter 1 Introduction to The Semiconductor Industry 1 The Semiconductor Industry INFRASTRUCTURE Industry Standards (SIA, SEMI, NIST, etc.) Production Tools Utilities Materials & Chemicals Metrology Tools
Reflective Optical Sensor with Transistor Output
Reflective Optical Sensor with Transistor Output CNY7 Description The CNY7 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E