TS High surge voltage 1.25 A SCR for circuit breaker. Features. Description
|
|
- Kristopher Melton
- 7 years ago
- Views:
Transcription
1 TS1-7 High surge voltage 1.25 SCR for circuit breaker G Features Datasheet - production data On-state rms current, 1.25 Repetitive peak off-state voltage, 700 V Non-repetitive direct surge peak off-state voltage, 1250 V Non-repetitive reverse surge peak off-state voltage, 850 V Triggering gate current, 0 µ K G K TO-92 with GK pinout TS1-71 G SMBflat-3L TS1-7UF K Description Thanks to highly sensitive triggering levels, the TS1-7 series is suitable for circuit breaker applications where the available gate current is limited. Such applications include GFCI (ground fault circuit interrupter), FCI (arc fault circuit interrupter), RCD (residual current device), and RCBO (residual current circuit breaker with overload protection). The 1250 V surge voltage capability of the TS1-7 enables high robustness of the whole circuit breaker. The low leakage current of the TS1-7 reduces power consumption over the entire lifetime of the circuit breaker. The TS1-7 is available in through-hole TO-92 package with GK pinout and in SMBflat-3L. June 2014 DocID Rev 4 1/ This is information on a product in full production.
2 Characteristics TS1-7 1 Characteristics Table 1. bsolute ratings (limiting values) Symbol Parameter Value Unit I T(RMS) On-state rms current (180 conduction angle) TO-92 T l = 58 C SMBflat-3L T tab = 1 C 1.25 IT (V) verage on-state current (180 conduction angle) TO-92 T l = 58 C SMBflat-3L T tab = 1 C 0.8 I TSM Non repetitive surge peak on-state current t p = 8.3 ms 27 t p = ms 25 1st step: one surge every 5 seconds, 25 surges 2nd step: one surge every 5 seconds, 25 surges t p = ms T 25 times 12, j initial = 25 C 25 times 16 I ² t I ² t Value for fusing t p = ms S di/dt Critical rate of rise of on-state current I G = 2 x I GT, t r 0 ns Critical rate of rise of on-state current Gate open, V D = V BO, t r 0 ns F = 60 Hz T j = 125 C 0 T j = 25 C 0 /µs V DRM, V RRM Repetitive peak off-state voltage, gate open T j = 125 C 700 V V DSM V RSM Non-repetitive direct surge peak off-state voltage, R GK = 220 Ω Non-repetitive reverse surge peak off-state voltage, R GK = 220 Ω t p = 50 µs T j = 25 C 1250 V t p = 50 µs T j = 25 C 850 V I GM Peak gate current t p = 20 µs T j = 125 C 1.2 P G(V) verage gate power dissipation T j = 125 C 0.2 W T stg Storage junction temperature range - 40 to T j Operating junction temperature range - 40 to C Table 2. Electrical characteristics Symbol Test conditions Value Unit I GT V D = 12 V, R L = 140Ω T j = 25 C Min. 1 Max. 0 µ V GT Max. 0.8 V V GD V D = V DRM, R L = 33 kω, R GK = 220 Ω T j = 125 C Min. 0.1 V V RG I RG = 2 m T j = 25 C Min. 7.5 V I H I T = 50 m, R GK = 220 Ω T j = 25 C Max. 2 m I L I G = 5 m, R GK = 220 Ω T j = 25 C Max. 2 m dv/dt V D = 67% V DRM, R GK = 220 Ω T j = 125 C Min. 15 V/µs 2/ DocID Rev 4
3 TS1-7 Characteristics Table 3. Static electrical characteristics Symbol Test conditions Value Unit V TM I TM = 2.5, t p = 380 µs T j = 25 C Max. 1.4 V V T0 Threshold voltage T j = 125 C Max. 0.9 V R D Dynamic resistance T j = 125 C Max. 200 mω I DRM I RRM V D = V DRM / V RRM, R GK = 220 Ω T j = 25 C 1 µ Max. T j = 125 C 0 µ Table 4. Thermal resistance Symbol Parameter Value Unit R th(j-l) Junction to leads (DC) TO TO R th(j-a) Junction to ambient (DC) SMBflat-3L 75 R th(j-c) Junction to case (DC) S = 5 cm 2 SMBflat-3L 14 C/W Figure 1. Maximum average power dissipation versus average on-state current Figure 2. verage and DC on-state current versus lead temperature (TO-92) 1.2 P(W) α = 30, 60, 90, 120, 180, DC I T(V) () α = 30, 60, 90, 120, 180, DC I T(V) () 360 α T lead ( C) Figure 3. verage and DC on-state current versus lead temperature (SMBflat-3L) Figure 4. verage and DC on-state current versus ambient temperature I T(V) () α = 30, 60, 90, 120, 180, DC I T(V) () SMBF-3L 180- SMBF-3L DC TO TO DC 0.2 T lead ( C) T amb( C) DocID Rev 4 3/
4 Characteristics TS1-7 Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration 0 0. K=[Z th(j-a) /R th(j-a) ] TO-92 SMBflat-3L Copper surface area = 5cm² t p(s) 1 E-03 E-02 E-01 E+00 E+01 E+02 E+03 Figure 6. Relative variation of gate triggering current and voltage, holding and latching current versus T j I GT,I H,I L, VGT [T] j / I GT, I H, I L, V GT [T j=25 C] I H & I L V GT I GT T ( C) j Figure 7. Relative variation of holding current versus gate-cathode resistance (typical values) 1.5 I H[R GK] / I H[ R GK = 220 Ω] Figure 8. Relative variation of dv/dt immunity versus gate-cathode resistance (typical values).00 dv/dt[r GK] / dv/dt[r GK = 220 ] V T j = 125 C D = 0.67 x VDRM R GK(k Ω) R GK( ) Figure 9. Relative variation of dv/dt immunity versus gate-cathode capacitance (typical values) dv/dt[c GK] / dv/dt[c GK = 0 nf] Typical value of dv/dt [CGK = 0 nf] = 25 V/µs Tj = 125 C V D = 0.67 x VDRM C GK(nF) Figure. Relative variation of dv/dt immunity versus junction temperature with R GK = 220 Ω (typical values) dv/dt[ T j ] / dv/dt[ T j = 125 C] T ( C) j RGK = 220 Ω V D = 0.67 x VDRM / DocID Rev 4
5 TS1-7 Characteristics Figure 11. Surge peak on-state current versus number of cycles I TSM() TO-92 6 Repetitive 4 T =25 C 2 0 Non repetitive T j initial=25 C SMBF-3L Repetitive T =25 C Number of cycles t p=ms One cycle Figure 12. Non-repetitive surge peak on-state current, and corresponding values of I 2 t I TSM(), I t ( s) Sinusoidal pulse with width tp < ms t (ms) p I TSM I²t T j initial=25 C Figure 13. On-state characteristics (maximum values) I TM() T J =125 C T J =25 C V TM(V) T j max : V to =0.9 V R d =200 mω Figure 14. Thermal resistance junction to ambient versus copper surface under anode (SMBflat-3L) R th(j-a) ( C/W) S(cm²) Epoxy printed circuit board FR4 copper thickness = 35 µm DocID Rev 4 5/
6 C line transient voltage ruggedness TS1-7 2 C line transient voltage ruggedness In comparison with standard SCRs, the TS1-7 is self-protected against over-voltage. The TS1-7 switch can safely withstand C line surge voltages by switching to the on state (for less than ms on 50 Hz mains) to dissipate energy shocks through the load. The load limits the current through the TS1-7. The self-protection against over-voltage is based on an overvoltage crowbar technology. This safety feature works even with high turn-on current ramp up. Figure 15 represents the TS1-7 in a test environment. It is used to stress the TS1-7 switch according to the IEC standard conditions. The TS1-7 folds back safely to the on state as shown in Figure 16. The TS1-7 recovers its blocking voltage capability after the surge and the next zero current crossing. Such a non repetitive test can be done at least times. Figure 15. Overvoltage ruggedness test circuit for IEC standards Surge generator Filtering unit Model of the load R 1 R 2 C Mains 60 Ω 60 Ω C IN 150 nf TS1 V T I T 12 Ω 47 nf Figure 16. Typical current and voltage waveforms across the TS1-7 during IEC standard test V peak =V BO 1.2/50 µs voltage surge V 0 I peak = 25 I di/dt = 0 /µs 0 6/ DocID Rev 4
7 TS1-7 Package information 3 Package information Epoxy meets UL94, V0 Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Figure 17. TO_92 dimensions (definitions) a B C F D E Ref. Table 5. TO-92 dimensions (values) Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max B C 2.54 D E F a For packing information see STMicroelectronics document PD0022 Packing information, xial, through hole, surface mount and chip scale packages for IPD, protection, rectifiers, thyristors and CSs. DocID Rev 4 7/
8 Package information TS1-7 Figure 18. SMBflat-3L dimensions (definitions) D e b 2x c L 2x L2 2x E E1 L1 L1 L L2 b4 Ref. Table 6. SMBflat-3L dimensions (values) Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max b b c D E E L L L e Figure 19. SMBflat-3L footprint dimensions 0.51 (20) 5.84 (0.230) 2.07 (82) 2.07 (82) 0.51 (20) 1.20 (47) 3.44 (0.136) 1.20 (47) millimeters (inches) 8/ DocID Rev 4
9 TS1-7 Ordering information 4 Ordering information Figure 20. Ordering information scheme TS (-P) Sensitive SCR series Current (rms) 1 = 1.25 Gate sensitivity = 0 µ Voltage 7 = 700 V Package 1 = TO-92 with GK pinout UF = SMBflat-3L Packing mode -P = mmopack (TO_92) Blank = Bulk (TO-92), 13 tape and reel (SMBflat-3L) Table 7. Ordering information Order code Marking Package Weight Base qty. Delivery mode TS1-71 TS Bulk T mg TS1-71-P TS mmopack TS1-7UF TS1-7 SMBflat-3L 47 mg 5000 Tape and reel 13 5 Revision history Table 8. Document revision history Date Revision Changes 01-Sep Initial release. 11-Sep dded SMBflat-3L package. 17-Oct Corrected typographical error in Figure Jun Updated device name. DocID Rev 4 9/
10 TS1-7 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. ST PRODUCTS RE NOT UTHORIZED FOR USE IN WEPONS. NOR RE ST PRODUCTS DESIGNED OR UTHORIZED FOR USE IN: () SFETY CRITICL PPLICTIONS SUCH S LIFE SUPPORTING, CTIVE IMPLNTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONL SFETY REQUIREMENTS; (B) ERONUTIC PPLICTIONS; (C) UTOMOTIVE PPLICTIONS OR ENVIRONMENTS, ND/OR (D) EROSPCE PPLICTIONS OR ENVIRONMENTS. WHERE ST PRODUCTS RE NOT DESIGNED FOR SUCH USE, THE PURCHSER SHLL USE PRODUCTS T PURCHSER S SOLE RISK, EVEN IF ST HS BEEN INFORMED IN WRITING OF SUCH USGE, UNLESS PRODUCT IS EXPRESSLY DESIGNTED BY ST S BEING INTENDED FOR UTOMOTIVE, UTOMOTIVE SFETY OR MEDICL INDUSTRY DOMINS CCORDING TO ST PRODUCT DESIGN SPECIFICTIONS. PRODUCTS FORMLLY ESCC, QML OR JN QULIFIED RE DEEMED SUITBLE FOR USE IN EROSPCE BY THE CORRESPONDING GOVERNMENTL GENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica / DocID Rev 4
BTW69-1200N. 50 A 1200 V non insulated SCR thyristor. Description. Features. Applications
50 1200 V non insulated SCR thyristor Datasheet - production data G K K G TOP3 non insulated Description vailable in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications
More informationSTTH110. High voltage ultrafast rectifier. Description. Features
High voltage ultrafast rectifier Datasheet - production data K Description The STTH110, which is using ST ultrafast high voltage planar technology, is especially suited for free-wheeling, clamping, snubbering,
More informationX02. 1.25 A sensitive gate SCR. Features. Applications. Description. on-state rms current: 1.25 A. repetitive peak off-state voltage: 600 V and 800 V
1.25 sensitive gate SCR Features on-state rms current: 1.25 repetitive peak off-state voltage: 600 V and 800 V G gate triggering current: 50 and 200 µ K pplications ground fault circuit interrupters overvoltage
More informationSTTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02
Ultrafast recovery diode Main product characteristics I F(V) 3 V RRM 2 V T j (max) V F (typ) 175 C.7 V K t rr (typ) 16 ns Features and benefits Very low conduction losses Negligible switching losses K
More informationSTTH1R04-Y. Automotive ultrafast recovery diode. Features. Description
Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A
More informationBTA40, BTA41 and BTB41 Series
BTA4, BTA41 and BTB41 Series STANDARD 4A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 4 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 ma DESCRIPTION Available in high power packages, the BTA/ BTB4-41
More informationAN2703 Application note
Application note list for SCRs, TRIACs, AC switches, and DIACS Introduction All datasheet parameters are rated as minimum or maximum values, corresponding to the product parameter distribution. In each
More informationTPI. Tripolar protection for ISDN interfaces. Features. Description. Complies with following standards. Benefits
Tripolar protection for ISDN interfaces Features Bidirectional triple crowbar protection Peak pulse current: I PP = 30, 10/1000 µs Breakdown voltage: TPI80N: 80 V TPI120N: 120 V vailable in SO-8 package
More informationBTW67 and BTW69 Series
BTW67 and BTW69 Series STNDRD 50 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 50 V DRM /V RRM 600 to 1200 V G K I GT 80 m G K DESCRIPTION vailable in high power packages, the BTW67 / BTW69 Series is suitable
More informationBZW50. Transil, transient voltage surge suppressor (TVS) Features. Description
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 5000 W (10/0 µs) Stand-off voltage range from 10 V to 180 V Unidirectional and bidirectional types
More informationSTTH2R06. High efficiency ultrafast diode. Features. Description
STTH2R6 High efficiency ultrafast diode Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description A K The STTH2R6 uses
More informationDDSL01. Secondary protection for DSL lines. Features. Description
Secondary protection for DSL lines Features Stand off voltage: 30 V Surge capability: I pp = 30 A 8/20 µs Low capacitance device: 4.5 pf at 2 V RoHS package Low leakage current: 0.5 µa at 25 C 3 2 Description
More informationP6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
More informationTable 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO 10605 - C = 330 pf, R = 330 Ω : Contact discharge Air discharge
Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Datasheet - production data Complies with the following standards ISO 10605 - C = 150 pf, R = 330 Ω : 30 kv (air discharge)
More informationESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323
Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4
More informationBTA12, BTB12, T12xx. 12 A Snubberless, logic level and standard triacs. Features. Applications. Order code. Description
12 A Snubberless, logic level and standard triacs Features Medium current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated BTA High commutation (4Q)
More informationETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
More informationBTB04-600SL STANDARD 4A TRIAC MAIN FEATURES
BTB-6SL STANDARD A TRIAC MAIN FEATURES A Symbol Value Unit I T(RMS) A V DRM /V RRM 6 V I GT(Q) ma G A A DESCRIPTION The BTB-6SL quadrants TRIAC is intended for general purpose applications where high surge
More informationLM337. Three-terminal adjustable negative voltage regulators. Features. Description
Three-terminal adjustable negative voltage regulators Datasheet - production data current limit, thermal overload protection and safe area protection. All overload protection circuitry remains fully functional
More informationACS108. Overvoltage protected AC switch (ACS ) Description. Features. Applications
Overvoltage protected AC switch (ACS ) Datasheet - production data OUT G TO-92-6SA -8SA COM COM OUT COMG -6SN -8SN Description The belongs to the AC switch range (built with A. S. D. technology). This
More informationDSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards
-xxxsc5 Secondary protection for DSL lines Features Low capacitance devices: -xxxsc5: Delta C typ = 3.5 pf High surge capability: 30 A - 8/20 µs Voltage: 8 V, 10.5 V, 16 V, and 24 V RoHS package Benefits
More informationSTN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
More informationULN2801A, ULN2802A, ULN2803A, ULN2804A
ULN2801A, ULN2802A, ULN2803A, ULN2804A Eight Darlington array Datasheet production data Features Eight Darlington transistors with common emitters Output current to 500 ma Output voltage to 50 V Integral
More informationSTP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
More informationSTP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V
More informationDescription. Table 1. Device summary. Order codes. TO-220 (single gauge) TO-220 (double gauge) D²PAK (tape and reel) TO-220FP
1.2 V to 37 V adjustable voltage regulators Description Datasheet - production data TO-220 TO-220FP The LM217, LM317 are monolithic integrated circuits in TO-220, TO-220FP and D²PAK packages intended for
More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu.
EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu. 2N3055, MJ2955 Complementary power transistors Features Datasheet - production
More information2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description
Low voltage NPN power Darlington transistor Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application Linear
More informationBD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor
Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with
More informationDescription. Table 1. Device summary
2 A positive voltage regulator IC Description Datasheet - production data Features TO-220 Output current up to 2 A Output voltages of 5; 7.5; 9; 10; 12; 15; 18; 24 V Thermal protection Short circuit protection
More informationLM134-LM234-LM334. Three terminal adjustable current sources. Features. Description
Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal
More informationSTP55NF06L STB55NF06L - STB55NF06L-1
General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V
More informationUA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)
General-purpose single operational amplifier Datasheet - production data N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null 1 2 - Inverting input 3 - Non-inverting
More informationSTPS5L60. Power Schottky rectifier. Description. Features
Power Schottky rectifier Datasheet - production data Description Power Schottky rectifier suited for switch mode power supplies and high frequency inverters. This device is intended for use in low voltage
More informationDescription. Table 1. Device summary. Order code Temperature range Package Packaging Marking
14-stage ripple carry binary counter/divider and oscillator Applications Automotive Industrial Computer Consumer Description Datasheet - production data Features Medium speed operation Common reset Fully
More informationDescription SO-8. series. Furthermore, in the 8-pin configuration Very low-dropout voltage (0.2 V typ.)
ery low-dropout voltage regulator with inhibit function TO-92 Bag TO-92 Tape and reel Ammopack 1 2 3 SO-8 Description Datasheet - production data The is a very low-dropout voltage regulator available in
More informationST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
More informationlogic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68GW GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristor in a plastic SYMBOL PRMETER MX. UNIT envelope suitable for surface mounting,
More informationSTIEC45-xxAS, STIEC45-xxACS
Transil TVS for IEC 61000-4-5 compliance Datasheet - production data differential mode MIL STD 883G, method 3015-7 Class 3B 25 kv HBM (human body model) Resin meets UL 94, V0 MIL-STD-750, method 2026 solderability
More informationBD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
More informationBD135 - BD136 BD139 - BD140
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted
More informationlogic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
More informationSTB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)
More informationL6234. Three phase motor driver. Features. Description
Three phase motor driver Features Supply voltage from 7 to 52 V 5 A peak current R DSon 0.3 Ω typ. value at 25 C Cross conduction protection TTL compatible driver Operating frequency up to 150 khz Thermal
More informationL78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description
L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition
More informationTDA2004R. 10 + 10 W stereo amplifier for car radio. Features. Description
10 + 10 W stereo amplifier for car radio Features Low distortion Low noise Protection against: Output AC short circuit to ground Overrating chip temperature Load dump voltage surge Fortuitous open ground
More informationSTB75NF75 STP75NF75 - STP75NF75FP
STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB75NF75 75V
More informationULN2001, ULN2002 ULN2003, ULN2004
ULN2001, ULN2002 ULN2003, ULN2004 Seven Darlington array Datasheet production data Features Seven Darlingtons per package Output current 500 ma per driver (600 ma peak) Output voltage 50 V Integrated suppression
More informationI T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g
BT9 series GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristors in a SYMBOL PRMETER MX. MX. MX. UNIT plastic envelope, intended for use in general purpose switching and phase BT9
More informationSTP10NK80ZFP STP10NK80Z - STW10NK80Z
STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V
More informationTDA2003 10W CAR RADIO AUDIO AMPLIFIER
TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additional features of TDA 2002, very low number of external
More informationlogic level for RCD/ GFI applications
logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended
More informationDSL03. Low capacitance TVS for high speed lines such as xdsl. Description. Features. Complies with the following standards
Low capacitance TVS for high speed lines such as xdsl Description Datasheet - production data Features High surge capability to comply with GR-1089 and ITU-T K20/21 Keeps its peak power capability up to
More informationLM135-LM235-LM335. Precision temperature sensors. Features. Description
Precision temperature sensors Features Directly calibrated in K 1 C initial accuracy Operates from 450µA to 5mA Less than 1Ω dynamic impedance TO-92 (Plastic package) Description The LM135, LM235, LM335
More informationMCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS
MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,
More informationSingle LNB supply and control IC DiSEqC 1.X compliant with EXTM based on the LNBH29 in a QFN16 (4x4) Description
Single LNB supply and control IC DiSEqC 1.X compliant with EXTM based on the LNBH29 in a QFN16 (4x4) Data brief Low-drop post regulator and high-efficiency step-up PWM with integrated power N-MOS allowing
More informationMC33079. Low noise quad operational amplifier. Features. Description
Low noise quad operational amplifier Datasheet production data Features Low voltage noise: 4.5 nv/ Hz High gain bandwidth product: 15 MHz High slew rate: 7 V/µs Low distortion: 0.002% Large output voltage
More informationVN5R003H-E. 3 mω reverse battery protection switch. Features. Description. Application
3 mω reverse battery protection switch Datasheet production data Features Max supply voltage V CC -16 to 41 V Operating voltage range V CC -16 to 28 V On-state resistance R ON 3mΩ General Optimized electromagnetic
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors
DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
More informationSTGB10NB37LZ STGP10NB37LZ
STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop Low gate charge TAB TAB High current capability High voltage clamping feature Applications
More informationSTB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3
STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mω, 80 A, DPAK, IPAK, D 2 PAK, I 2 PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type V DSS R DS(on)
More informationSCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability
More informationTN0023 Technical note
Technical note Discontinuous flyback transformer description and design parameters Introduction The following is a general description and basic design procedure for a discontinuous flyback transformer.
More informationSPC5-FLASHER. Flash management tool for SPC56xx family. Description. Features
Flash management tool for SPC56xx family Data brief Flash verify: check the Flash content with a binary image file Unsecure sequence for censored device: sending the private password selected from the
More informationMC34063AB, MC34063AC, MC34063EB, MC34063EC
MC34063AB, MC34063AC, MC34063EB, MC34063EC DC-DC converter control circuits Description Datasheet - production data Features DIP-8 SO-8 Output switch current in excess of 1.5 A 2 % reference accuracy Low
More informationOrder code Temperature range Package Packaging
ST485B ST485C Low power RS-485/RS-422 transceiver Features Low quiescent current: 300 µa Designed for RS-485 interface application - 7 V to 12 V common mode input voltage range Driver maintains high impedance
More informationSTW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
More informationFLC21-135A LOW POWER FIRE LIGHTER CIRCUIT. Application Specific Discretes A.S.D.
Application Specific iscretes A.S.. LC21-135A LOW POWER IRE LIGHTER CIRCUIT EATURES EICATE THYRISTOR STRUCTURE OR CAPACITIVE ISCHARGE IGNITION OPERATION HIGH PULSE CURRENT CAPABILITY I RM =90A @ tp=10µs
More informationAN3353 Application note
Application note IEC 61000-4-2 standard testing Introduction This Application note is addressed to technical engineers and designers to explain how STMicroelectronics protection devices are tested according
More informationPassivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control
TO-92 Rev. 9 9 November 2 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features and benefits Designed to be interfaced directly
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BTA4 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
More informationSTP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED
More informationUSBP01-5M8. ESD protection for enhanced micro USB interface. Features. Applications. Description. Complies with following standards
USBP01-5M8 ESD protection for enhanced micro USB interface Datasheet production data Features D+/D- and ID lines protection with 7 V low voltage diodes (LV) V BUS line protection with 32 V high voltage
More informationSTCS1. 1.5 A max constant current LED driver. Features. Applications. Description
1.5 A max constant current LED driver Features Up to 40 V input voltage Less than 0.5 V voltage overhead Up to 1.5 A output current PWM dimming pin Shutdown pin LED disconnection diagnostic DFN8 (3x3 mm)
More informationC106 Series. Sensitive Gate Silicon Controlled Rectifiers
C6 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control;
More informationMT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics
MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated
More informationSTP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V
More informationSTW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
More informationEVL185W-LEDTV. 185 W power supply with PFC and standby supply for LED TV based on the L6564, L6599A and Viper27L. Features.
Features 185 W power supply with PFC and standby supply for LED TV based on the L6564, L6599A and Viper27L Data brief Universal input mains range: 90 264 Vac - frequency 45 65 Hz Output voltage 1: 130
More informationSM6T. Transil. Features. Description. Complies with the following standards. Peak pulse power: 600 W (10/1000 µs).
Transil Features Peak pulse power: 600 W (10/1000 µs) 4 kw (8/20 µs) Breakdown voltage range: from 6.8 V to 220 V Unidirectional and bidirectional types Low leakage current: 0.2 µa at 25 C 1 µa at 85 C
More informationTS555. Low-power single CMOS timer. Description. Features. The TS555 is a single CMOS timer with very low consumption:
Low-power single CMOS timer Description Datasheet - production data The TS555 is a single CMOS timer with very low consumption: Features SO8 (plastic micropackage) Pin connections (top view) (I cc(typ)
More informationHigh Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die
More informationUM1613 User manual. 16-pin smartcard interface ST8034P demonstration board. Introduction
User manual 16-pin smartcard interface ST8034P demonstration board Introduction The purpose of this document is to describe, and provide information on, how to efficiently use the ST8034P smartcard interface
More informationHigh Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES
More informationSTP16NF06L STP16NF06LFP
STP16NF06L STP16NF06LFP N-CHNNEL 60V - 0.07 Ω - 16 TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP16NF06L STP60NF06LFP 60 V 60 V
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N8F6 110N8F6 TO-220 Tube
N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max I D P TOT TAB STP110N8F6 80 V 0.0065 Ω 110 A 200 W TO-220
More informationSTTA506D/F/B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) V RRM 600V. t rr (typ) 20ns. VF (max) 1.
STT506D/F/B TURBOSWITCH ULTR-FST HIGH OLTGE DIODE MIN PRODUCTS CHRCTERISTICS IF() RRM 5 600 K t rr (typ) 20ns F (max) 1.5 K K FETURES ND BENEFITS SPECIFICTO FREEWHEELMODE OPERTIONS: FREEWHEEL OR BOOSTER
More informationAN2604 Application note
AN2604 Application note STM32F101xx and STM32F103xx RTC calibration Introduction The real-time clock (RTC) precision is a requirement in most embedded applications, but due to external environment temperature
More informationSTP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1
More informationLM2901. Low-power quad voltage comparator. Features. Description
Low-power quad voltage comparator Features Wide single supply voltage range or dual supplies for all devices: +2 V to +36 V or ±1 V to ±18 V Very low supply current (1.1 ma) independent of supply voltage
More informationObsolete Product(s) - Obsolete Product(s)
Vertical deflection booster for 3 App TV/monitor applications with 0 V flyback generator Features Figure. Heptawatt package Power amplifier Flyback generator Stand-by control Output current up to 3.0 App
More informationHigh Performance Schottky Rectifier, 1.0 A
High Performance Schottky Rectifier, 1. A VS-BQ3-M3 Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1. A V R 3 V V F at I F.42 V I RM max. 15 ma at 125 C T J max. 15 C Diode variation Single die
More informationSTCS1A. 1.5 A max constant current LED driver. Features. Applications. Description
1.5 A max constant current LED driver Features Up to 40 V input voltage Less than 0.5 V voltage overhead Up to 1.5 A output current PWM dimming pin Shutdown pin LED disconnection diagnostic DFN8 (3 x 3
More informationSchottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
More informationSTCS2A. 2 A max constant current LED driver. Features. Applications. Description
2 A max constant current LED driver Features Up to 40 V input voltage Less than 0.5 V voltage overhead Up to 2 A output current PWM dimming pin Shutdown pin LED disconnection diagnostic Slope control with
More informationVN03. ISO high side smart power solid state relay PENTAWATT. Features. Description. www.tvsat.com.pl
ISO high side smart power solid state relay Features Type V DSS R DS(on) I n (1) Maximum continuous output current (a) : 4A @ Tc= 25 C 5V logic level compatible input Thermal shutdown Under voltage protection
More informationNE555 SA555 - SE555. General-purpose single bipolar timers. Features. Description
NE555 SA555 - SE555 General-purpose single bipolar timers Features Low turn-off time Maximum operating frequency greater than 500 khz Timing from microseconds to hours Operates in both astable and monostable
More informationSchottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES
More informationAN3332 Application note
Application note Generating PWM signals using STM8S-DISCOVERY Application overview This application user manual provides a short description of how to use the Timer 2 peripheral (TIM2) to generate three
More informationM24LRxx/CR95HF application software installation guide
User manual M24LRxx/CR95HF application software installation guide Introduction This user manual describes the procedures to install the different software drivers required to use the DEVKIT-M24LR-A development
More information