One-Chip Linear Control IPS, F5106H

Transcription

1 One-Chi Linear Control IPS, F5106H NAKAGAWA Sho OE Takatoshi IWAMOTO Motomitsu ABSTRACT In the fi eld of vehicle electrical comonents, the increasing demands for miniaturization, reliability imrovement and functional enhancement are required. To meet these demands, Fuji Electric has develoed one-chi linear control intelligent ower switch (IPS), F5106H, which mounts a high-recision current amlifi er on the conventional IPS. Alied with 4th generation IPS device and rocess technology, it can be integrated into one chi and mounted in a SOP-8 ackage. In addition, the maximum rating of the junction temerature has been set to 175 C to imrove the durability in a harsh temerature environment, and low ower oeration can be allowed down to 4.5 V. 1. Introduction In recent years, in the field of vehicle electrical comonent, further safety erformance enhancement, exhaust gas reduction and imrovement of fuel efficiency have been imlemented with safety, environmental rotection and energy saving as the keywords. In order to achieve these objectives, advancement of vehicle control technology and exansion of electronic control systems of automobiles have been romoted. Among these, in order to secure a sacious indoor interior, miniaturization and functional enhancement are required in an electronic control unit (ECU). Furthermore, along with high-density mounting of the ECU, handling high temerature in addition to miniaturizing and functional enhancement in mounting arts is also in demand. In addition, as for a solenoid valve that is controlled by the ECU, there is an increasing tendency to aly linear control that uses a linear solenoid valve. A linear solenoid valve can control oil ressure linearly according to current value; therefore, it is ossible to control the vehicle by fine oil ressure commanding, and hel to reduce exhaust gas and imrove fuel efficiency. However, it is necessary for this linear control to detect the current that flows in the linear solenoid with high accuracy. Fuji Electric has been develoing intelligent ower switch (IPS) roducts for vehicle electrical comonent systems for years, which are alied for a transmission, engine, brake and the like. The IPS is a roduct with a vertical-tye ower metal-oxide-semiconductor field-effect transistor (MOSFET) that is used as an outut stage, and horizontal-tye MOSFET that comrises a control and rotection circuit, integrated on Electronic Devices Business Grou, Fuji Electric Co., Ltd. the same chi. The IPS has been contributing to the miniaturization of ECUs by enabling reduction in the number of circuit comonents and mounting area of an ECU. In recent years, by virtue of the alication of the fourth-generation IPS device rocess technology, further miniaturization of the chi became ossible. This time, by alying these technologies, we have develoed an IPS F5106H for one-touch linear control in which a high-recision current amlifier is integrated in the existing IPS. 2. Features The external view, outline drawing and terminal board schedule of F5106H are shown in Fig. 1, a circuit block diagram in Fig. 2 and usage examles in Fig. 3. In addition, the maximum rating is described in Table 1. The main characteristics of F5106H are the following 6 items, and they suort miniaturization, erformance enhancement and reliability imrovement of the vehicle electrical comonent system: (a) By alying the fourth-generation IPS device rocess technology, an external oerational amlifier and a high-side tye IPS* 1 are integrated into one chi, which is mounted in the SOP-8 ackage. This decreases the number of arts, thus contributing to miniaturization of a system and the total cost reduction. (b) By having a built-in oerational amlifier, which enables high-recision of a load current, high recision linear control is established. * 1: High-side tye IPS: An IPS in which a semiconductor device is mounted on the ower side and a load on the ground side resectively. issue: Power Semiconductors Contributing in Energy Management 251

2 (8) (5) Terminal number Function Symbol (4) (1) Unit (mm) (1) Inut terminal (2) Oerational amlifier outut terminal (3) Grounding terminal (4) High-side IPS outut terminal (5) Power terminal (6) Oerational amlifier + Inut terminal (7) Oerational amlifier Inut terminal (8) Power terminal (a) External aearance (b) Full view (c) Terminal layout Fig.1 External aearance, full view, terminal layout of F5106H Table 1 Maximum rated value of F5106H (T a=25 C) Item Symbol Condition Rated value Unit Low Logic circuit Internal electrical ower source Level shift driver Short Fig.2 Circuit block diagram of F5106H On-Off signal Overheat Load current - High-side tye IPS Oerational amlifier High-side IPS: Common to oerational amlifier Power (1) V CC (1) Pulse 0.25s 50 V Power (2) V CC (2) DC 0.3 to +35 V Junction temerature T j 175 C Storage temerature T stg 55 to +175 C High-side IPS Outut current I D DC 2 A Outut V OA V CC 50 V Consumtion ower P D DC 2 W Inut (1) V (1) DC R =0 Ω 0.5 V Inut (2) V (2) DC 7 V Inut current I DC ±10 ma Oerational amlifier Voltage V (1) DC 0.5 to +7 V V (2) 5s 1.1 to +18 V Voltage V (1) DC 0.5 to +7 V V (2) 5s 1.1 to +18 V Current I DC 10 ma Current I DC 10 ma Voltage V DC 7 V Current I DC 10 ma Current value outut F5106H - (c) The maximum rated value of junction temerature is set at 175 C, which imroves durability in a severe temerature environment. (d) Low ower oeration u to 4.5 V is enabled. (e) Load short-circuit rotection function is built in. (f) Zener Diode for low imedance surge absortion is built in, which secures high electrostatic discharge (ESD) tolerance dose. Fig.3 Usage examles of F5106H 2.1 Features of high-side tye IPS Table 2 shows the electrical characteristic of the 252 FUJI ELECTRIC REVIEW vol.59 no

3 Table 2 Electrical characteristic of high-side tye IPS Item Symbol Condition Oeration ower Low Low return Inut threshold high-side tye IPS. Load short-circuit rotection and reduction of oeration ower are described as below: (1) Load short-circuit rotection In order to reare for the case when an overcurrent flows in the outut stage ower MOSFET, an overcurrent function is built in to rotect load and elements. Figure 4 shows a waveform at overcurrent oeration. The function detects overcurrent and kees down the eak current to a certain level when outut current enters an oscillating state. By doing so, it is ossible to suress noise generated by the element even at abnormal states. In addition, by otimizing the duty ratio* 2 in an outut oscillation state, it is ossible to suress the average outut current, contributing to refinement of ECU wiring as well as thinning and weight reducing of a wire harness. Furthermore, it is equied with an overheat function because there is a risk of a breakdown due to heat generated by the outut stage ower MOSFET when an abnormality state continues. Because resonsiveness is imortant for the overheat Condition: V CC=13 V, V =5 V, n channel MOSFET load is used current Standard value Min. Max. V 10 V/DIV Peak Current Unit V CC V =5 V V UV V V =5 V UV V V H V CC =4.5 to V V L R L =10 Ω On-resistance R DS(on) I =1.5 A T a =150 C T a =25 C I =1.5 A Overheat I OC V CC =13 V V =5 V V 0.12 Ω 0.24 Ω 2 7 A T tri V =5 V C Unless otherwise noted, T a= 40 to +175 C, V CC=8 to 16 V. Table 3 Electrical characteristic of oeration amlifi er section Item Symbol Condition Outut range Outut current function, a temerature sensor is arranged within the active ortion of the outut stage ower MOSFET to seed u the resonse. (2) Low ower oeration Power is designed to be able to maintain the on-resistance even when the momentarily dros at engine start. By reducing the threshold of element devices that comrises the circuit, even if a ower dros to 4.5 V, it is ossible to maintain almost the same level of on-resistance as a normal of 13 V. In addition, a low function is integrated so that circuit oeration does not become unstable in the region where a ower is below 4.5 V. As a result of these imrovements, erformance and redundancy of the element is maintained at the same level as the normal state even when the ower dros. 2.2 Features of oerational amlifier Table 3 shows the electrical characteristic of the oerational amlifier section. In order to achieve high current accuracy at 40 to +175 C, the following three oints are imlemented: a) By adoting a -tye MOSFET for the differential amlifier, a gate size is otimized. (b) By imlementing a common centroid* 3 layout for the differential amlifier, fluctuation of current accuracy is reduced. (c) Trimming circuit is built in to reduce the variation of offset. 3. Alied Technology Standard value Min. Max. Unit V OH R =5 kω 0 5 V I SOURCE I SK V =366 mv 0.1 ma V =384 mv 0.1 ma Gain G ty.=8 times accuracy I sns1 I sns2 V =375 mv R =50 kω V =375 mv R =50 kω V CC =14 ± 1 V T a =25 C % % Unless otherwise noted, T a= 40 to +175 C, V CC=8 to 16 V. issue: Power Semiconductors Contributing in Energy Management I 5 A/DIV For F5106H, the fourth-generation IPS device ro- Horizontal axis: 400 μs/div Fig.4 Waveform at overcurrent oeration V 5 V/DIV * 2: Duty ratio: Ratio of on-status at outut oscillation state. * 3: Common centroid: To searate and arrange MOSFET airs so that each center of gravity matches to reduce fluctuation in roerties. One-Chi Linear Control IPS, F5106H 253

4 Source Gate Drain Source Gate Drain Gate Source Gate Gate The third generation n + + n n + Refinement of circuit section rocessing rule Drain () Change in outut stage ower MOSFET Source Gate Drain Source Gate Drain Gate Gate Source Gate Gate The fourth generation + + n Drain () Fig.5 Characteristic of the fourth-generation IPS device rocessing technology cess technology is alied (1). Figure 5 shows the fourth generation IPS device structure. In order to miniaturize the chi size, the outut stage ower MOSFET is changed from the existing lanar gate tye to a trench gate tye and the area of the wiring that connects between device elements is reduced by alying multi metal layer technology in addition to thinning the element devices themselves. By develoing this technology, the high-side tye IPS and oerational amlifier are integrated into one chi, enabling to mount it into the SOP-8 ackage. The following two oints are considered to integrate into one-chi design: (a) Chi rear surface becomes high (battery ) as a result of integrating into one chi. A device structure that suresses the substrate bias effect is adoted in order to eliminate the influence of this effect. (b) A layout that reduces variation in electrical characteristics of the oerational amlifier is imlemented. Secifically, a layout that minimizes the influence of the differential amlifier due to generation of heat from the outut stage ower MOSFET is imlemented, and the differential amlifier is aligned in the center of the chi considering residual stress within the ackage. In order to enable oeration at a temerature of 175 C, the following two oints are imlemented. (a) In order to secure noise surge tolerance even under an environment with a temerature of 175 C, the roduct is designed to kee a good balance of blocking between the outut stage ower MOSFET and device elements of circuit section. (b) By reviewing ackage material, high reliability is achieved even under 175 C environment. 4. Postscrit This aer described one-chi IPS F5106H for linear control, which can hel to achieve miniaturization and erformance enhancement of ECUs. Continuously, Fuji Electric will be develoing various IPS roducts by using the fourth-generation device rocessing technology and contributing to functional enhancement, miniaturization and reliability imrovement of vehicle electrical comonent systems. Reference 1) Toyoda, Y. 60 V- Class Power IC Technology for an Intelligent Power Switch with an Integrated Trench MOSFET. ISPSD , FUJI ELECTRIC REVIEW vol.59 no

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