Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9885A IRFBC40A HEXFET Power MOSFET V DSS Rds(on) max I D 600V.2Ω 6.2A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 0) TO220AB G D S Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 6.2 I D @ T C = 0 C Continuous Drain Current, V GS @ V 3.9 A I DM Pulsed Drain Current 25 P D @T C = 25 C Power Dissipation 25 W Linear Derating Factor.0 W/ C V GS GatetoSource Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ƒ 6.0 V/ns T J Operating Junction and 55 to 50 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torqe, 632 or M3 screw lbf in (.N m) Typical SMPS Topologies: l Single Transistor Forward Notes through are on page 8 www.irf.com 6/24/99
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Voltage 600 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.66 V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance.2 Ω V GS = V, I D = 3.7A V GS(th) Gate Threshold Voltage 2.0 4.0 V V DS = V GS, I D = 250µA I DSS DraintoSource Leakage Current 25 V µa DS = 600V, V GS = 0V 250 V DS = 480V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 0 V GS = 30V na GatetoSource Reverse Leakage 0 V GS = 30V Dynamic @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 3.4 S V DS = 50V, I D = 3.7A Q g Total Gate Charge 42 I D = 6.2A Q gs GatetoSource Charge nc V DS = 480V Q gd GatetoDrain ("Miller") Charge 20 V GS = V, See Fig. 6 and 3 t d(on) TurnOn Delay Time 3 V DD = 300V t r Rise Time 23 ns I D = 6.2A t d(off) TurnOff Delay Time 3 R G = 9.Ω t f Fall Time 8 R D = 47Ω,See Fig. C iss Input Capacitance 36 V GS = 0V C oss Output Capacitance 36 V DS = 25V C rss Reverse Transfer Capacitance 7.0 pf ƒ =.0MHz, See Fig. 5 C oss Output Capacitance 487 V GS = 0V, V DS =.0V, ƒ =.0MHz C oss Output Capacitance 36 V GS = 0V, V DS = 480V, ƒ =.0MHz C oss eff. Effective Output Capacitance 48 V GS = 0V, V DS = 0V to 480V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 570 mj I AR Avalanche Current 6.2 A E AR Repetitive Avalanche Energy 3 mj Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase.0 R θcs CasetoSink, Flat, Greased Surface 0.50 C/W R θja JunctiontoAmbient 62 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 6.2 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 25 (Body Diode) pn junction diode. S V SD Diode Forward Voltage.5 V T J = 25 C, I S = 6.2A, V GS = 0V t rr Reverse Recovery Time 43 647 ns T J = 25 C, I F = 6.2A Q rr Reverse RecoveryCharge.8 2.8 µc di/dt = 0A/µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L D ) 2 www.irf.com
I D, DraintoSource Current (A) 0 0. VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0.0 0. 0 V DS, DraintoSource Voltage (V) 20µs PULSE WIDTH T 0. J = 50 C 0 V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics, Fig 2. Typical Output Characteristics, I D, DraintoSource Current (A) 0 T = 50 J C T J = 25 C V DS= 50V 20µs PULSE WIDTH 0. 4.0 5.0 6.0 7.0 8.0 9.0.0 V GS, GatetoSource Voltage (V) R DS(on), DraintoSource On Resistance (Normalized) 3.0 2.5 2.0.5.0 0.5 I D = 5.9A 6.2A V GS = V 0.0 60 40 20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature www.irf.com 3
C, Capacitance(pF) IRFBC40A 0000 000 00 0 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss Crss 0 00 V DS, DraintoSource Voltage (V) V GS, GatetoSource Voltage (V) 20 6 2 8 4 I = D 6.2A 5.9A V DS = 480V V DS = 300V V DS = 20V FOR TEST CIRCUIT SEE FIGURE 3 0 0 8 6 24 32 40 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. DraintoSource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage 0 0 OPERATION IN THIS AREA LIMITED BY R DS(on) I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C V GS = 0 V 0. 0.4 0.6 0.8.0.2 V SD,SourcetoDrain Voltage (V) I D, Drain Current (A) us 0us ms ms TC = 25 C TJ = 50 C Single Pulse 0. 0 00 000 V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
7.0 V DS R D I D, Drain Current (A) 6.0 5.0 4.0 3.0 2.0 R G V GS V Pulse Width µs Duty Factor 0. % D.U.T. Fig a. Switching Time Test Circuit V DD.0 0.0 25 50 75 0 25 50 T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature V DS 90% % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = 0.50 0.20 PDM 0. 0. t 0.05 t2 0.02 0.0 Notes: SINGLE PULSE (THERMAL RESPONSE). Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase www.irf.com 5
V DSav, Avalanche Voltage ( V ) IRFBC40A R G V DS 20V tp Fig 2a. Unclamped Inductive Test Circuit tp L D.U.T I AS 0.0Ω V (BR)DSS 5V DRIVER V DD A E AS, Single Pulse Avalanche Energy (mj) 400 200 00 800 600 400 200 TOP BOTTOM I D 2.8A 3.9A 6.2A 0 25 50 75 0 25 50 Starting T, Junction Temperature ( J C) I AS Fig 2b. Unclamped Inductive Waveforms Q G Fig 2c. Maximum Avalanche Energy Vs. Drain Current V Q GS Q GD 820 V G 800 Current Regulator Same Type as D.U.T. Charge Fig 3a. Basic Gate Charge Waveform 780 760 2V V GS.2µF 50KΩ 3mA.3µF D.U.T. I G I D Current Sampling Resistors V DS Fig 3b. Gate Charge Test Circuit 720 0.0.0 2.0 3.0 4.0 5.0 6.0 7.0 I AV, Avalanche Current ( A) Fig 2d. Typical DraintoSource Voltage Vs. Avalanche Current 6 www.irf.com 740
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReApplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For NChannel HEXFETS www.irf.com 7
Package Outline TO220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) A 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.60 0) 4.84 (.58 4) 4 6.47 (.2 55) 6. (.2 40) 2 3.5 (.045) M IN LEAD ASSIGNMENTS GA T E 2 DR A IN 3 SOURCE 4 DR A IN 4.09 (.5 55) 3.47 (.5 30) 4.06 (.60) 3.55 (.40) EXAMPLE : 3X.40 (.055).5 (.045) 2.54 (.0) 2X 3X 0.93 (.03 7) 0.69 (.02 7) 0.36 (.0 4) M B A M 3X 2.92 (.5) 2.64 (.4) 0.55 (.022) 0.46 (.08) NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M, 982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220AB THIS IS AN IRF W ITH ASSEMBLY LOT CODE 9BM INTERN ATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRF 9246 9B M A PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L =29.6mH R G = 25Ω, I AS = 6.2A. (See Figure 2) ƒ I SD 6.2A, di/dt 80A/µs, V DD V (BR)DSS, T J 50 C Pulse width 300µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) 322 333 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: 44 883 732020 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: 49 672 96590 IR ITALY: Via Liguria 49, 07 Borgaro, Torino Tel: 39 45 0 IR FAR EAST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: 8 3 3983 0086 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3, Singapore 237994 Tel: 65 838 4630 IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Tel: 886223779936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99 8 www.irf.com