KSA992 PNP Epitaxial Silicon Transistor

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KSA992 PNP Epitaxial Silicon Transistor Features Audio Frequency Low-Noise Amplifier Complement to KSC1845 1 2 3 1 2 3 TO-92 1. Emitter 2. Collector 3. Base September 2015 Straight Lead Bulk Packing Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method KSA992FBU A992 TO-92 3L Bulk KSA992FTA A992 TO-92 3L Ammo KSA992FATA A992 TO-92 3L Ammo KSA992FBTA A992 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 C unless otherwise noted. Symbol Parameter Value Unit V CBO Collector-Base Voltage -120 V V CEO Collector-Emitter Voltage -120 V V EBO Emitter-Base Voltage -5 V I C Collector Current -50 ma I B Base Current -10 ma T J Junction Temperature 150 C T STG Storage Temperature -55 to 150 C KSA992 Rev. 2.2

Thermal Characteristics (1) Values are at T A = 25 C unless otherwise noted. Symbol Parameter Value Unit Power Dissipation 500 mw P D Derate Above 25 C 4 mw/ C R θja Thermal Resistance, Junction-to-Ambient 250 C/W Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at T A = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit I CBO Collector Cut-Off Current V CB = -120 V, I E = 0-50 na I CEO Collector Cut-Off Current V CE = -100 V, I B = 0-1 μa I EBO Emitter Cut-Off Current V EB = -5 V, I C = 0-50 na h FE1 V CE = -6 V, I C = -0.1 ma 150 500 DC Current Gain h FE2 V CE = -6 V, I C = -1 ma 200 500 800 V BE (on) Base-Emitter On Voltage V CE = -6 V, I C = -1 ma -0.55-0.61-0.65 V V CE (sat) Collector-Emitter Saturation Voltage I C = -10 ma, I B = -1 ma -0.09-0.30 V f T Current Gain Bandwidth Product V CE = -6 V, I C = -1 ma 50 100 MHz C ob Output Capacitance V CB = -30 V, I E = 0, f = 1 MHz 2 3 pf NV Noise Voltage V CE = -5.0 V, I C = -1.0 ma, R G = 100kΩ, G V = 80 db, f = 10 Hz to 1.0 khz 25 40 mv h FE Classification Classification P F FA FB E h FE2 200 ~ 400 300 ~ 600 300 ~ 470 430 ~ 600 400 ~ 800 KSA992 Rev. 2.2 2

Typical Performance Characteristics -1.0 IB = -1.2μA IB = -1.2μA IB = -1.0μA -0.8 IB = -0.8μA -0.6 IB = -0.6μA -0.4 IB = -0.4μA -0.2 IB = -0.2μA IB = 0 0.0 0-20 -40-60 -80-100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic -10 IB = -24μA IB = -20μA -8 IB = -16μA -6 IB = -12μA -4 IB = -8μA IB = -4μA -2 IB = 0 0 0-1 -2-3 -4-5 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. Static Characteristic hfe, DC CURRENT GAIN 1000 800 600 400 200 VCE= -6V 0-0.01-0.1-1 -10-100 VCE(sat), VBE(sat)[V], SATURATION VOLTAGE -10-1 -0.1 VBE(sat) VCE(sat) IC = 10 - IB -0.01-0.1-1 -10-100 Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage Cob [pf], CAPACITANCE 10 1 0.1-1 -10-100 -1000 VCB [V], COLLECTOR-BASE VOLTAGE IE=0 f = 1MHz ft[mhz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 100 10 1 0.1 1 10 100 IE[mA], COLLECTOR CURRENT VCE = -6V Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product KSA992 Rev. 2.2 3

Typical Performance Characteristics (Continued) PC[mW], POWER DISSIPATION 800 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 Ta[ o C], AMBIENT TEMPERATURE Figure 7. Power Derating KSA992 Rev. 2.2 4

Physical Dimensions Figure 8. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type KSA992 Rev. 2.2 5

Physical Dimensions (Continued) Figure 9. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type KSA992 Rev. 2.2 6

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