MJD NPN Silicon Darlington Transistor eatures D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead ormed for Surface Mount Applications Electrically Similar to Popular TIP Complement to MJD7 D-PAK.Base.Collector 3.Emitter B March 06 Equivalent Circuit C R R R 8k E R 0.k MJD NPN Silicon Darlington Transistor Ordering Information Part Number Top Mark Package Packing Method MJDT MJD TO-5 3L (DPAK) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 5 C unless otherwise noted. Symbol Parameter Value Units V CBO Collector-Base Voltage 00 V V CEO Collector-Emitter Voltage 00 V V EBO Emitter-Base Voltage 5 V I C Collector Current (DC) 8 A I CP Collector Current (Pulse) 6 A I B Base Current 0 ma Collector Dissipation (T C = 5 C) 0 W P C Collector Dissipation (T A = 5 C).75 W T J Junction Temperature 50 C T STG Storage Temperature - 65 to 50 C 999 airchild Semiconductor Corporation www.fairchildsemi.com MJD Rev..4
Electrical Characteristics Values are at T A = 5 C unless otherwise noted. Symbol Parameter Test Condition Min. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage () I C = 30 ma, I B = 0 00 V I CEO Collector Cut-off Current V CE = 50 V, I B = 0 0 A I CBO Collector Cut-off Current V CB = 00 V, I E = 0 0 A I EBO Emitter Cut-off Current V EB = 5 V, I C = 0 ma h E DC Current Gain () V CE = 4 V, I C = 4 A V CE = 4 V, I C = 8 A V CE (sat) Collector-Emitter Saturation Voltage () Note:. Pulse test: pw 300 s, duty cycle %. I C = 4 A, I B = 6 ma I C = 8 A, I B = 80 ma V BE (sat) Base-Emitter Saturation Voltage () I C = 8 A, I B = 80 ma 4.5 V V BE (on) Base-Emitter On Voltage () V CE = 4 V, I C = 4 A.8 V C ob Output Capacitance V CB = 0 V, I E = 0 f= 0.MHz 000 00 K 4 V V 00 p MJD NPN Silicon Darlington Transistor 999 airchild Semiconductor Corporation www.fairchildsemi.com MJD Rev..4
Typical Performance Characteristics he, DC CURRENT GAIN 0k k 00 0. 0 igure. DC current Gain VCE = 4V VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0 0. VBE(sat) VCE(sat) 0.0 0. 0 00 IC = 50 IB igure. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage MJD NPN Silicon Darlington Transistor 000 0 VCC= 30V IC=50IB IB=IB Cob[p], CAPACITANCE 00 0 tr,td[ s], TURN ON TIME 0. tr td, VBE(off)=0 0. 0 00 VCB[V], COLLECTOR-BASE VOLTAGE igure 3. Collector Output Capacitance 0.0 0. 0 igure 4. Turn On Time 0 00 VCC=30V IC=50IB tstg,t[ s], TURN O TIME tstg t 0 0. DC 5ms 00 s 500 s ms 0. 0. 0 igure 5. Turn Off Time 0.0 0 00 000 VCE[V], COLLECTOR-EMITTER VOLTAGE igure 6. Safe Operating Area 999 airchild Semiconductor Corporation www.fairchildsemi.com MJD Rev..4 3
Typical Performance Characteristics (Continued) PC[W], POWER DISSIPATION 5 0 5 0 5 0 0 5 50 75 00 5 50 75 TC[ o C], CASE TEMPERATURE igure 7. Power Derating Curve MJD NPN Silicon Darlington Transistor 999 airchild Semiconductor Corporation www.fairchildsemi.com MJD Rev..4 4
6.80 6.40 A 5.55 MIN 0.90 0.50 6.30 5.90 6.50 MIN 6.40 0.64.90.50 0.86 0.66 3.48.08 C 0.96 MAX 3 4.56.8.85 MIN.5 MIN 5.64 5.04 LAND PATTERN RECOMMENDATION B.40.0 0.60 0.40 4.83 MIN 6.80 9.80 9.0 SEE DETAIL A.57 NOTES:UNLESS OTHERWISE SPECIIED A) NOT COMPLIANT TO JEDEC TO-5 VARIATION AB B) ALL DIMENSION ARE IN MILLIMETER C) DIMENSIONS ARE EXCLUSIVE O BURRS,MOLD LASH, AND TIE BAR EXTRUSIONS D) LAD PATTERN PER IPC735A ATANDARD TO8P99X39-3N E) DRAWING ILE NAME:MKT-TO5D03REV3. ) DOES NOT COMPLY JEDEC STANDARD VALUE. G) AIRCHILD SEMICONDUCTOR. 0.0 B GAGE PLANE.0 0.7 MAX SEATING PLANE DETAIL A SCALE 0 : 0.60 0.40 8 0 0.55 MIN
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