EZ6.D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial-lead, transfer-molded plastic package that offers protection in all common environmental conditions. Specification Features: Zener Voltage Range - 6. V to 8 V ESD Rating of Class (>6 KV) per Human Body Model Surge Rating of 98 W @ ms Maximum Limits Guaranteed on up to Six Electrical Parameters Package No Larger than the Conventional Watt Package These are Pb-Free Devices* Cathode Anode Mechanical Characteristics: CASE: Void free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 6 C, /6 from the case for seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any AXIAL LEAD CASE 9 PLASTIC MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Max. Steady State Power Dissipation @ T L = 7 C, Lead Length = /8 Derate above 7 C P D W mw/ C Steady State Power Dissipation @ T A = C Derate above C P D 6.67 W mw/ C Operating and Storage Temperature Range T J, T stg -6 to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A EZ xxd YYWW A = Assembly Location EZxxD = Device Number YY = Year WW = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping EZxxDG EZxxDRLG Axial Lead (Pb-Free) Axial Lead (Pb-Free) Units / Box 6 / Tape & Reel *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, LLC, 7 August, 7 - Rev. Publication Order Number: EZ6.D/D
EZ6.D Series ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted, V F =. V Max @ I F = ma for all types) Symbol Parameter I V Z I ZT Reverse Zener Voltage @ I ZT Reverse Current I F Z ZT Maximum Zener Impedance @ I ZT I ZK Reverse Current Z ZK Maximum Zener Impedance @ I ZK Reverse Leakage Current @ V R V R V Z I ZT V F V V R Breakdown Voltage I F Forward Current V F Forward Voltage @ I F I ZM Maximum DC Zener Current Surge Current @ T A = C Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted, V F =. V Max @ I F = ma for all types) Device (Note ) Device Marking Zener Voltage (Note ) Zener Impedance (Note ) Leakage Current V Z (Volts) @ I ZT Z ZT @ I ZT Z ZK @ I ZK @ V R I ZM (Note ) Min Nom Max ma ma A Max Volts ma ma EZ6.DRLG EZ6.D.89 6. 6.. 7. EZDG EZD..6 8. 7.. 9.9 8. EZ6DRLG EZ6D. 6 6.8 7. 7... 69. EZ8DRLG EZ8D 7. 8 8.9 6. 7...7.. TOLERANCE AND TYPE NUMBER DESIGNATION Tolerance designation - device tolerance of ±% are indicated by a suffix.. ZENER VOLTAGE (V Z ) MEASUREMENT ON Semiconductor guarantees the zener voltage when measured at ms ± ms, /8 from the diode body. And an ambient temperature of C (+8 C, - C). ZENER IMPEDANCE (Z Z ) DERIVATION The zener impedance is derived from 6 seconds AC voltage, which results when an AC current having an rms value equal to % of the DC zener current (I ZT or I ZK ) is superimposed on I ZT or I ZK.. SURGE CURRENT ( ) NON-REPETITIVE The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of / square wave or equivalent sine wave pulse of / second duration superimposed on the test current, I ZT, per JEDEC standards. However, actual device capability is as described in Figure of the General Data sheet for Surmetic s. The G'' suffix indicates these are Pb-Free packages. P D, STEADY STATE POWER DISSIPATION (WATTS) L = L = /8 L = /8 L = LEAD LENGTH TO HEAT SINK 6 8 6 8 T L, LEAD TEMPERATURE ( C) Figure. Power Temperature Derating Curve
EZ6.D Series θ JL (t, D) TRANSIENT THERMAL RESISTANCE JUNCTION TO LEAD ( C/W) 7.7. D =...... D = NOTE: BELOW. SECOND, THERMAL RESPONSE CURVE IS APPLICABLE TO ANY LEAD LENGTH (L). P PK t t DUTY CYCLE, D =t /t SINGLE PULSE T JL = JL (t)p PK REPETITIVE PULSES T JL = JL (t,d)p PK............. t, TIME (SECONDS) Figure. Typical Thermal Response L, Lead Length = /8 Inch P PK, PEAK SURGE POWER (WATTS) K RECTANGULAR NONREPETITIVE WAVEFORM T J = C PRIOR TO INITIAL PULSE.... PW, PULSE WIDTH (ms) Figure. Maximum Surge Power IR, REVERSE LEAKAGE (μ Adc) @ VR AS SPECIFIED IN ELEC. CHAR. TABLE....... T A = C. T A = C... NOMINAL V Z (VOLTS) Figure. Typical Reverse Leakage APPLICATION NOTE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, T L, should be determined from: T L = LA P D + T A LA is the lead to ambient thermal resistance ( C/W) and P D is the power dissipation. The value for LA will vary and depends on the device mounting method. LA is generally - C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady state conditions are achieved. Using the measured value of T L, the junction temperature may be determined by: T J = T L + T JL T JL is the increase in junction temperature above the lead temperature and may be found from Figure for a train of power pulses (L = /8 inch) or from Figure for dc power. T JL = JL P D For worst case design, using expected limits of I Z, limits of P D and the extremes of T J ( T J ) may be estimated. Changes in voltage, V Z, can then be found from: V = VZ T J VZ, the zener voltage temperature coefficient, is found from Figures and 6. Under high power pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure should not be used to compute surge capability. Surge limitations are given in Figure. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure be exceeded.
EZ6.D Series TEMPERATURE COEFFICIENT RANGES (9% of the Units are in the Ranges Indicated), TEMPERATURE COEFFICIENT (mv/ C) @ I ZT θvz 8 6 - RANGE - 6 7 8 9 V Z, ZENER VOLTAGE @ I ZT (VOLTS), TEMPERATURE COEFFICIENT (mv/ C) @ IZT θvz V Z, ZENER VOLTAGE @ I ZT (VOLTS) Figure. Units to Volts Figure 6. Units to Volts I Z, ZENER CURRENT (ma).... 6 7 8 9 V Z, ZENER VOLTAGE (VOLTS) ZENER VOLTAGE versus ZENER CURRENT (Figures 7, 8 and 9) I Z, ZENER CURRENT (ma).... 6 7 8 9 V Z, ZENER VOLTAGE (VOLTS) Figure 7. V Z =. thru Volts Figure 8. V Z = thru 8 Volts ( C/W) θ JL, JUNCTION TO LEAD THERMAL RESISTANCE 8 7 6 PRIMARY PATH OF CONDUCTION IS THROUGH THE CATHODE LEAD /8 / /8 / /8 / 7/8 L, LEAD LENGTH TO HEAT SINK (INCH) Figure 9. Typical Thermal Resistance L T L L
EZ6.D Series PACKAGE DIMENSIONS AXIAL LEAD CASE 9- ISSUE U B K F D NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO- OUTLINE SHALL APPLY. POLARITY DENOTED BY CATHODE BAND.. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F A K INCHES MILLIMETERS DIM MIN MAX MIN MAX A.6... B.79.6..7 D.8..7.86 F ---. ---.7 K. ---. --- Surmetic is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 USA Phone: -67-7 or 8--86 Toll Free USA/Canada Fax: -67-76 or 8--867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8-8-98 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 8--77-8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative EZ6.D/D