ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) FEATURES Dual hannel Quad hannel A A A 2 3 4 2 8 7 6 5 6 5 E E E Identical channel to channel footprint Dual and quad packages feature: - Reduced board space - Lower pin and parts count - Better channel to channel TR match - Improved common mode rejection Isolation test voltage from double molded package, 53 V RMS ompliant to RoHS Directive 22/95/E and in accordance to WEEE 22/96/E A 3 4 AGENY APPROVALS i792- A A 4 5 6 7 8 3 2 9 E E E UL577, file no. E52744 system code H, double protection SA 9375 BSI IE 695; IE 665 DIN EN 6747-5-2 (VDE884)/DIN EN 6747-5-5 pending, available with option i7952-2 V D E DESRIPTION The ILD65, ILQ65 are multi-channel phototransistor optocouplers that use GaAs IRLED emitters and high gain NPN phototransistors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 75 VA PEAK and a working voltage of 7 V RMS. The binned min./max. and linear TR characteristics make these devices well suited for D or A voltage detection. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. Because of guaranteed maximum non-saturated and saturated switching characteristics, the ILD65, ILQ65 can be used in medium speed data I/O and control systems. The binned min./max. TR specification allow easy worst case interface calculations for both level detection and switching applications. Interfacing with a MOS logic is enhanced by the guaranteed TR at I F = ma. Document Number: 83652 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev..6, 4-Mar-
ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) ORDERING INFORMATION I L x 6 5 - # X # # T DIP Option 6 PART NUMBER x = D (Dual) or Q (Quad) TR BIN PAKAGE OPTION TAPE AND REEL 7.62 mm Option 7.6 mm Option 9 AGENY ERTIFIED/PAKAGE DUAL HANNEL TR (%) ma QUAD HANNEL UL, SA, BSI, VDE 4 to 8 63 to 25 to 2 6 to 32 4 to 8 63 to 25 to 2 6 to 32 DIP-8 ILD65- ILD65-2 ILD65-3 ILD65-4 - - - - DIP-8, 4 mil, option 6 - - - ILD65-4X6 - - - - SMD-8, option 7 ILD65-X7T - - - - - - - SMD-8, option 9 ILD65-X9 ILD65-2X9T () ILD65-3X9T ILD65-4X9T () - - - - DIP-6 - - - - ILQ65- ILQ65-2 ILQ65-3 ILQ65-4 SMD-6, option 7 - - - - - ILQ65-2X7 ILQ65-3X7T () ILQ65-4X7 SMD-6, option 9 - - - - ILQ65-X9 - ILQ65-3X9T () ILQ65-4X9T () VDE 4 to 8 63 to 25 to 2 6 to 32 4 to 8 63 to 25 to 2 6 to 32 DIP-8 - ILD65-2X - ILD65-4X - - - - DIP-8, 4 mil, option 6 - ILD65-2X6 ILD65-3X6 ILD65-4X6 - - - - SMD-8, option 7 - - ILD65-3X7T () - - - - - DIP-6 - - - - - - ILQ65-3X ILQ65-4X DIP-6, 4 mil, option 6 - - - - - - ILQ65-3X6 - SMD-6, option 7 - - - - - ILQ65-2X7 - - Notes Also available in tubes; do not add T to end. Additional options may be possible, please contact sales office. >.7 mm >. mm ABSOLUTE MAXIMUM RATINGS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current I F 6 ma Surge current I FSM.5 A Power dissipation P diss mw Derate linearly from 25.33 mw/ OUTPUT ollector emitter breakdown voltage BV EO 7 V Emitter collector breakdown voltage BV EO 7 V ollector current I 5 ma t < ms I ma Power dissipation P diss 5 mw Derate linearly from 25 2 mw/ www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83652 2 Rev..6, 4-Mar-
Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION SYMBOL VALUE UNIT OUPLER Storage temperature T stg - 55 to + 5 Operating temperature T amb - 55 to + Junction temperature T j Soldering temperature () 2 mm distance from case bottom T sld 26 Package power dissipation ILD65 4 mw Derate linearly from 25 5.33 mw/ Package power dissipation ILQ65 5 mw Derate linearly from 25 6.67 mw/ Isolation test voltage t = s V ISO 53 V RMS Isolation voltage V IORM 89 V P Total power dissipation P tot 25 mw reepage distance 7 mm learance distance 7 mm Isolation resistance V IO = 5 V, T amb = 25 R IO 2 V IO = 5 V, T amb = R IO Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ELETRIAL HARATERISTS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = ma V F.5.3 V Breakdown voltage I R = μa V BR 6 3 V Reverse current V R = 6 V I R. μa apacitance V R = V, f = MHz O 25 pf Thermal resistance, junction to lead R THJL 75 K/W OUTPUT ollector emitter capacitance V E = 5 V, f = MHz E 6.8 pf ollector emitter leakage current, -, -2 V E = V I EO 2 5 na ollector emitter leakage current, -3, -4 V E = V I EO 5 na ollector emitter breakdown voltage I E =.5 ma BV EO 7 V Emitter collector breakdown voltage I E =. ma BV EO 7 V Thermal resistance, junction to lead R THJL 5 K/W PAKAGE TRANSFER HARATERISTIS hannel/channel TR match I F = ma, V E = 5 V TRX/TRY to 2 to OUPLER apacitance (input to output) V IO = V, f = MHz IO.8 pf Insulation resistance V IO = 5 V, T A = 25 R S 2 4 hannel to channel isolation 5 VA Note Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 83652 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev..6, 4-Mar- 3
ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) URRENT TRANSFER RATIO (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION PART SYMBOL MIN. TYP. MAX. UNIT urrent transfer ratio (collector emitter saturated) urrent transfer ratio (collector emitter) I F = ma, V E =.4 V I F = ma, V E = 5 V I F = ma, V E = 5 V ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 TR Esat 25 % TR Esat 4 % TR Esat 6 % TR Esat % TR E 3 3 % TR E 22 45 % TR E 34 7 % TR E 56 9 % TR E 4 6 8 % TR E 63 8 25 % TR E 5 2 % TR E 6 2 32 % SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST ONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test %, t test = s V pd.669 kv Partial discharge test voltage - lot test (sample test) t Tr = 6 s, t test = s, (see figure 2) V IOTM kv V pd.424 kv V IO = 5 V R IO 2 Insulation resistance V IO = 5 V, T amb = R IO V IO = 5 V, T amb 75 (construction test only) R IO 9 Forward current I SI 275 ma Power dissipation P SO 4 mw Rated impulse voltage V IOTM kv Safety temperature T SI 75 Note According to DIN EN 6747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. ompliance with the safety ratings shall be ensured by means of suitable protective circuits. www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83652 4 Rev..6, 4-Mar-
Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors 45 4 35 3 Phototransistor P SO (mw) V IOTM t, t 2 = to s t 3, t 4 = s t test = s t stres = 2 s 25 V Pd 2 5 IR-Diode I SI (ma) V IOWM V IORM 5 25 5 75 25 5 75 T amb - Ambient Temperature ( ) 393 t t Tr = 6 s t 3 t test t 4 t 2 t stres t Fig. - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN 6747-5-2 (VDE884); IE6747-5-5 SWITHING HARATERISTIS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION PART SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED urrent V = 5 V, R L = 75, 5 % of V PP I F ma Turn-on time V = 5 V, R L = 75, 5 % of V PP t on 3 μs Rise time V = 5 V, R L = 75, 5 % of V PP t r 2 μs Turn-off time V = 5 V, R L = 75, 5 % of V PP t off 2.3 μs Fall time V = 5 V, R L = 75, 5 % of V PP t f 2 μs Propagation H to L V = 5 V, R L = 75, 5 % of V PP t PHL. μs Propagation L to H V = 5 V, R L = 75, 5 % of V PP t PLH 2.5 μs SATURATED urrent Turn-on time V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 I F 2 ma I F ma I F ma I F 5 ma t on 3 μs t on 4.3 μs t on 4.3 μs t on 6 μs Document Number: 83652 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev..6, 4-Mar- 5
ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) SWITHING HARATERISTIS (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION PART SYMBOL MIN. TYP. MAX. UNIT SATURATED Rise time Turn-off time Fall time Propagation H to L Propagation L to H V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V V = 5 V, R L = k, V TH =.5 V ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 ILD65- ILQ65- ILD65-2 ILQ65-2 ILD65-3 ILQ65-3 ILD65-4 ILQ65-4 t r 2 μs t r 2.8 μs t r 2.8 μs t r 4.6 μs t off 8 μs t off 25 μs t off 25 μs t off 25 μs t f μs t f 4 μs t f 4 μs t f 5 μs t PHL.6 μs t PHL 2.6 μs t PHL 2.6 μs t PHL 5.4 μs t PLH 8.6 μs t PLH 7.2 μs t PLH 7.2 μs t PLH 7.4 μs OMMON MODE TRANSIENT IMMUNITY (T amb = 25, unless otherwise specified) PARAMETER TEST ONDITION SYMBOL MIN. TYP. MAX. UNIT ommon mode rejection output high V M = 5 V P-P, R L = k, I F = ma M H 5 V/μs ommon mode rejection output low V M = 5 V P-P, R L = k, I F = ma M L 5 V/μs ommon mode coupling capacitance M. pf www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83652 6 Rev..6, 4-Mar-
Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors TYPIAL HARATERISTIS (T amb = 25, unless otherwise specified) V = 5 V I F I F = ma t D V O V O t R f = khz, R L = 75 Ω t PLH DF = 5 % V TH =.5 V t PHL t S t F iild65_ iild65_4 Fig. 3 - Non-Saturated Switching Timing Fig. 6 - Saturated Switching Timing 2 f = khz, DF = 5 % V = 5 V R L V O P LED - LED Power (mw) 5 5 iild65_2-6 - 4-2 2 4 6 8 T amb - Ambient Temperature ( ) Fig. 4 - Saturated Switching Timing Fig. 7 - Maximum LED Power Dissipation I F.4 V O t PLH t PLH t S 5 % V F - Forward Voltage (V).3.2...9.8 T amb = - 55 T amb = 25 T amb = 85 iild65_3 t D t on t R t off t F.7. iild65_7 I F - Forward urrent (ma) Fig. 5 - Non-Saturated Switching Timing Fig. 8 - Forward Voltage vs. Forward urrent Document Number: 83652 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev..6, 4-Mar- 7
ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) I f(pk) - Peak LED urrent (ma) Duty Factor.5..2.5..2.5-6 -5-4 -3-2 - t - LED Pulse Duration (s) iild65_8 Fig. 9 - Peak LED urrent vs. Pulse Duration, τ t τ DF = /t TR NF - Normalized TR Factor.5..5 iild65_ Normalized to: V ce = V, I F = 5 ma, TR ce(sat) V ce =.4 V NTR ce NTR ce(sat).. I F - LED urrent (ma) T A = 25 Fig. 2 - Normalization Factor for Non-Saturated and Saturated TR vs. I F P DET - Detector Power (mw) 2 5 5-6 - 4-2 2 4 6 8 iild65_9 T amb - Ambient Temperature ( ) Fig. - Maximum Detector Power Dissipation TR NF - Normalized TR Factor.5..5 Normalized to: V E = V, I F = 5 ma TR ce(sat) V E =.4 V NTR ce NTR ce(sat) T A = 5.. iild65_2 I F - LED urrent (ma) Fig. 3 - Normalization Factor for Non-Saturated and Saturated TR vs. I F I E - ollector urrent (ma).. V E - ollector Emitter Voltage (V) iild65_ R th = 5 /W 25 5 75 9 Fig. - Maximum ollector urrent vs. ollector Voltage TR NF - Normalized TR Factor.5..5 iild65_3 Normalized to: V E = V, I F = 5 ma TR ce(sat) V E =.4 V NTR ce NTR ce(sat) T A = 7.. I F - LED urrent (ma) Fig. 4 - Normalization Factor for Non-Saturated and Saturated TR vs. I F www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83652 8 Rev..6, 4-Mar-
Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors TR NF - Normalized TR Factor.5..5 Normalized to: V E = V, I F = 5 ma TR ce(sat) V E =.4 V NTR ce NTR ce(sat) T A =.. - Propagation Low-High (µs) tplh. I F = ma V = 5 V, V th =.5 V t plh t phl 4. 3.5 3. 2.5.5. t phl - Propagation High-Low (µs) iild65_4 I F - LED urrent (ma) iild65_7 R L - Load Resistor (kω) Fig. 5 - Normalization Factor for Non-Saturated and Saturated TR vs. I F Fig. 8 - -, Propagation Delay vs. ollector Load Resistor I E - ollector urrent (ma) 35 3 25 2 5 5 5 25 85 2 3 4 7 5 6 t plh - Propagation Low-High(µs). I F = ma V = 5 V, V th =.5 V t plh t phl 2.5.5. t phl - Propagation High-Low (µs) iild65_5 I F - LED urrent (ma) iild65_8 R L - ollector Load Resistor (kω) Fig. 6 - ollector Emitter urrent vs. Temperature and LED urrent Fig. 9 - -2, -3, Propagation Delay vs. ollector Load Resistor I EO - ollector Emittet (na) 5 4 3 2 - - 2-2 iild65_6 V ce = V Typical 2 4 6 8 T amb - Ambient Temperature ( ) t plh - Propagation Low - High (µs). iild65_9 I F = ma V = 5 V, V th =.5 V t plh t phl 2.5.5. R L - ollector Load Resistor (kω) t phl - Propagation Low - High (μs) Fig. 7 - ollector Emitter Leakage vs. Temperature Fig. 2 - -4, Propagation Delay vs. ollector Load Resistor Document Number: 83652 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev..6, 4-Mar- 9
ILD65, ILQ65 Vishay Semiconductors Optocoupler, Phototransistor Output (Dual, Quad hannel) PAKAGE DIMENSIONS in millimeters Pin one ID 4 3 2 6.645 ±.65 5 6 7 8 ISO method A 9.77 ±.4.95 ±.9 4 typ..79 7.62 typ. 3.555 ±.255.27.5 ±.5.7 ±.9 3 to 9 3.45 ±.255 6.95 ±.255 i786 2.54 typ..25 ±.5 Pin one ID 8 7 6 5 4 3 2 6.48 6.8 9 2 3 4 5 6 ISO method A 9.77 2.7.76.4.79 7.62 typ. 3.3 3.8 4.46.56 2.54 typ..27.5.89 3 to 9 typ..2.3 2.79 3.3 5.84 6.35 i787 www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83652 Rev..6, 4-Mar-
Optocoupler, Phototransistor Output (Dual, Quad hannel) ILD65, ILQ65 Vishay Semiconductors Option 6 Option 7 Option 9 7.62 typ. 7.62 typ..3 max. 7.62 typ. 2.55 ±.25 3.5 ±.3. min..7 min. 8 min. 4.3 ±.3.6 min.. ±. 3.6 ±.3.3 max..6 min. 8 min..6 typ. 282-22.76.76 2.54 R.25.78 2.54 R.25.78 8 min..5.52 8 min..5.52.76.76 2.54 R.25.78 2.54 R.25.78 8 min..5.52 8 min..5.52 PAKAGE MARKING ILD65 2764-88 Notes Only options and 7 reflected in the package marking. The VDE Logo is only marked on option parts. Tape and reel suffix (T) is not part of the package marking. V YWW H 68 Document Number: 83652 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com Rev..6, 4-Mar-
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