BC107/ BC108/ BC109 Low Power Bipolar Transistors



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TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70 - L 45 Pin Configuration 1. Emitter. 2. Base. 3. Collector. Dimensions : Millimetres Page 1 30/05/05 V1.0

Absolute Maximum Ratings DESCRIPTION SYMBOL BC107 BC108 BC109 UNIT Collector-Emitter Voltage V CEO 45 25 25 V Collector-Base Voltage V CBO 50 30 30 V Emitter-Base Voltage V EBO 6.0 5.0 5.0 V Collector Current Continuous I C 0.2 A Power Dissipation at Ta = 25 C P D 0.6 W Derate Above 25 C 2.28 mw/ C Power Dissipation at Tc = 25 C P D 1.0 W Derate Above 25 C 6.67 mw/ C Operating And Storage Junction T j, T stg -65 to +200 C Temperature Range Thermal Resistance Junction to Case R th (j-c) 175 C/W Electrical Characteristics (Ta = 25 C Unless Otherwise Specified) Description Symbol Test Condition Minimum Maximum Unit Collector-Emitter Voltage V CEO I C = 2mA, I B = 0 BC107 45 V BC108/109 20 V Emitter-Base Voltage V EBO I E = 10uA, I C = 0 BC107 6.0 V BC108/109 5.0 V Collector-Cut off Current I CBO V CB = 45V, I E = 0 BC107 15 na V CB = 25V, I E = 0 BC108/109 15 na T amb = 125 C VCB = 45V, IE = 0 BC107 4.0 ua V CB = 25V, I E = 0 BC108/109 4.0 ua Page 2 30/05/05 V1.0

Description Symbol Test Condition Minimum Maximum Unit DC Current h FE I C = 10uA, V CE = 5V B Group 40 C Group 100 I C = 2mA, V CE = 5V BC107 110 450 BC108 110 800 BC109 200 800 A Group 110 220 B Group 200 450 C Group 420 800 Base Emitter Saturation Voltage V BE (Sat) IC = 10mA, I B = 0.5mA 0.83 V IC = 100mA, I B = 5mA 1.05 V Collector Emitter Saturation Voltage V CE (Sat) IC = 10mA, I B = 0.5mA 0.25 V IC = 100mA, I B = 5mA 0.60 V Base Emitter on Voltage V BE (on) IC = 2mA, V CE = 5V 0.55 0.70 V IC = 10mA, V CE = 5V 0.77 V Collector Knee Voltage V CE (K) IC = 10mA, I B = The Value for 0.60 V which IC = 11mA, at V CE = 1V Transition Frequency f t V CE = 5V, IC =10mA, f = 100MHz 150 MHz Noise Figure NF V CE = 5V, I C = 0.2mA R g = 2kohms, F = 30Hz to 15 KHz BC109 4.0 db F = 1kHz, B = 200Hz BC109 4.0 db BC107/108 10 db Output Capacitance C obo V CB = 10V, f = 1MHz 4.5 pf Small Signal Current Gain h FE I C = 2mA,V CE = 5V BC107 125 500 BC108 125 900 BC109 240 900 A Group 125 260 B Group 240 500 C Group 450 900 Input Impedance hie I C = 2mA,V CE = 5V A Group 1.6 4.5 KΩ B Group 3.2 8.5 KΩ C Group 6.0 15 KΩ Output Admittance hoe I C = 2mA,V CE = 5V A Group 30 umhos B Group 60 umhos C Group 110 umhos Page 3 30/05/05 V1.0

Specifications V CEO (V) V CBO (V) I C (A) h FE minimum at I C = 2 (ma) Noise Figure (db) Transition Frequency minimum (MHz) P tot at T a = 25 C (mw) Package and pin out Part Number (NPN) BC107 45 50 BC107A 125 10 BC107B BC108 0.2 150 600 TO-18 BC108B 25 30 BC108C BC109 240 4 BC109B BC109C Page 4 30/05/05 V1.0

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