Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively 1 TO26 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter alue Units CBO Collector-Base oltage CES Collector-Emitter oltage CEO Collector-Emitter oltage EBO Emitter-Base oltage - 5 I C Collector Current (DC) - 4 A I CP *Collector Current (Pulse) - 7 A I B Base Current - 1 A P C Collector Dissipation (T C =25 C) 36 W T J Junction Temperature 150 C T STG Storage Temperature - 65 ~ 150 C
Electrical Characteristics T C =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units CEO (sus) Collector-Emitter Sustaining oltage I CBO Collector Cut-off Current I CEO Collector Cut-off Current * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed I C = ma, I B = 0 CB =, I E = 0 CB =, I E = 0 CB =, I E = 0 CE =, BE = 0 CE =, BE = 0 CE =, BE = 0 I EBO Emitter Cut-off Current EB = - 5, I C = 0-1 ma h FE * DC Current Gain /436 : ALL DEICE /436 CE = - 5, I C = - 10mA CE = - 1, I C = - 500mA CE = - 1, I C = - 2A 40 30 85 50 40 CE (sat) BE (on) * Collector-Emitter Saturation oltage * Base-Emitter ON oltage I C = - 2A, I B = - 0.2A - 0.2-0.2-0.2-0.5-0.5-0.6 CE = - 1, I C = - 2A - 1.1-1.1-1.2 f T Current Gain Bandwidth Product CE = - 1, I C = - 250mA 3 MHz
Typical Characteristics hfe, DC CURRENT GAIN 1000 100 10 CE = CE(sat)[], SATURATION OLTAGE -0.1 IC = 10 IB 1-0.01-0.1 0 00-0.01-0.1 0 Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation oltage -5.0-4.5-4.0-3.5-3.0-2.5-2.0.5.0-0.5 CE = -0.0-0.0-0.3-0.5-0.8.0.3.5.8-2.0 BE[], BASE-EMITTER OLTAGE C CBO (pf), COLLECTOR BASE CAPACITANCE 000 00 0-0.1 0 00 000 CB [], COLLECTOR BASE OLTAGE Figure 3. Base-Emitter On oltage Figure 4. Collector-Base Capacitance 0 IC MAX. (Pulsed) 48 IC Max. (Continuous) 1ms 10ms DC 10µs BD434 BD436 BD438-0.1 0 00 100µs PC[W], POWER DISSIPATION 42 36 30 24 18 12 6 0 0 25 50 75 100 125 150 175 200 CE[], COLLECTOR-EMITTER OLTAGE TC[ o C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating 2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
Package Demensions TO26 3.90 ±0.10 8.00 ±0.30 3.25 ±0.20 ø3.20 ±0.10 14.20MAX 11.00 ±0.20 0.75 ±0.10 (1.00) (0.50) 1.60 ±0.10 0.75 ±0.10 13.06 ±0.30 16.10 ±0.20 1.75 ±0.20 2.28TYP [2.28±0.20] #1 2.28TYP [2.28±0.20] 0.50 +0.10 0.05 Dimensions in Millimeters
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