MJD (NPN), MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( Suffix) Electrically Similar to Popular TIP and TIP Series NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant* SILICON POWER TRANSISTORS AMPERES 00 VOLTS, 0 WATTS CASE CASE 69D MARKING DIAGRAMS AYWW JxG YWW JxG A = Assembly Location Y = Year WW = Work Week x = or 7 G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 0 November, 0 Rev. Publication Order Number: MJD/D
MAXIMUM RATINGS Rating Symbol Max Unit CollectorEmitter Voltage V CEO 00 Vdc CollectorBase Voltage V CB 00 Vdc EmitterBase Voltage V EB 5 Vdc Collector Current Continuous Peak I C 4 Base Current I B 50 madc Adc Total Power Dissipation @ T C = 5 C Derate above 5 C Total Power Dissipation (Note) @ T A = 5 C Derate above 5 C P D 0 0.6 P D.75 0.04 W W/ C W W/ C Operating and Storage Junction Temperature Range T J, T stg 65 to +50 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 6.5 C/W Thermal Resistance, JunctiontoAmbient (Note ) R JA 7.4 C/W. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Î ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted) Î Characteristic Symbol Min Max Unit Î OFF CHARACTERISTICS Î CollectorEmitter Sustaining Voltage (Note ) V Î (I C = 0 madc, I B = 0) CEO(sus) Vdc 00 Î Collector Cutoff Current I CEO Adc (V Î CE = 50 Vdc, I B = 0) 0 Î Collector Cutoff Current I CBO Adc (V CB = 00 Vdc, I E = 0) 0 Î Emitter Cutoff Current I Î (V BE = 5 Vdc, I C = 0) EBO madc Î CollectorCutoff Current I CBO Adc Î (V CB = 80 Vdc, I E = 0) 0 Î EmitterCutoff Current I EBO madc (V BE = 5 Vdc, I C = 0) Î ON CHARACTERISTICS Î DC Current Gain h Î (I C = 0.5 Adc, V CE = Vdc) FE 500 (I Î C = Adc, V CE = Vdc) (I C = 4 Adc, V CE = Vdc) 000,000 00 Î CollectorEmitter Saturation Voltage V Î (I C = Adc, I B = 8 madc) CE(sat) Vdc (I Î C = 4 Adc, I B = 40 madc) Î BaseEmitter Saturation Voltage (I C = 4 Adc, I B V BE(sat) Vdc = 40 madc) Î 4 BaseEmitter On Voltage V Î (I C = Adc, V CE = Vdc) BE(on) Vdc.8 Î DYNAMIC CHARACTERISTICS Î CurrentGain Bandwidth Product f T MHz (I Î C = 0.75 Adc, V CE = 0 Vdc, f = MHz) 5 Î Output Capacitance (V CB = 0 Vdc, I E C ob pf = 0, f = 0. Mhz) Î MJD7, NJVMJD7T4G 00 MJD, NJVMJDG, NJVMJDT4G 00 Î. Pulse Test: Pulse Width 00 s, Duty Cycle %. *These ratings are applicable when surface mounted on the minimum pad sizes recommended.
R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D, MUST BE FAST RECOVERY TYPE, e.g.: N585 USED ABOVE I B 00 ma MSD600 USED BELOW I B 00 ma V APPROX + 8 V 0 V APPROX - V t r, t f 0 ns DUTY CYCLE = % 5 s 5 R B D 8 k 60 + 4 V TUT V CC - 0 V FOR t d AND t r, D IS DISCONNECTED AND V = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. Figure. Switching Times Test Circuit R C SCOPE t, TIME ( s) μ 4 0.8 0.6 t s V CC = 0 V I C /I B = 50 0.4 t d @ V BE(off) = 0 V PNP 0. NPN 0.04 0.06 0. 0. 0.4 0.6 4 Figure. Switching Times t f I B = I B T J = 5 C t r r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.5 0. 0. 0. 0.07 0.05 0.0 0.0 D = 0.5 0. 0. 0.05 0.0 SINGLE PULSE R JC(t) = r(t) R JC R JC = 6.5 C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) JC(t) P (pk) t t DUTY CYCLE, D = t /t 0.0 0.0 0.0 0.0 0.05 0. 0. 0. 0.5 5 0 0 0 50 00 00 00 500 t, TIME OR PULSE WIDTH (ms) Figure. Thermal Response 000 4
ACTIVEREGION SAFEOPERATING AREA IC, COLLECTOR CURRENT (AMP) 0 7 5 0.7 ms 5 ms 0.5 dc 0. 0. BONDING WIRE LIMITED 0. THERMAL LIMIT SECOND BREAKDOWN LIMIT T J = 50 C CURVES APPLY BELOW RATED V CEO 00 s 500 s PD, POWER DISSIPATION (WATTS) T A.5.5 0.5 T C 5 0 5 0 5 T A SURFACE MOUNT T C 5 7 0 0 0 50 70 00 00 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 0 5 50 75 00 5 5 T, TEMPERATURE ( C) Figure 4. Maximum Rated Forward Biased Safe Operating Area Figure 5. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on T J(pk) = 50 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 0% provided T J(pk) < 50 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. C, CAPACITANCE (pf) 00 00 70 T C = 5 C 50 C ob 0 C ib 0 PNP NPN 0 0.04 0.06 0. 0. 0.4 0.6 4 6 0 0 40 V R, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance 5
TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD PNP MJD7 6 k 4 k T J = 5 C V CE = V 6 k 4 k T C = 5 C V CE = V hfe, DC CURRENT GAIN k k k 800 600-55 C 5 C hfe, DC CURRENT GAIN k k k 800 600-55 C 5 C 400 00 0.04 0.06 0. 0. 0.4 0.6 400 00 4 0.04 0.06 0. 0. 0.4 0.6 4 Figure 7. DC Current Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS).4.6..8.4 I C = 0.5 A A A 4 A 0.6 0. 0. 0.5 5 0 I B, BASE CURRENT (ma) T J = 5 C 0 50 00 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS).4 Figure 8. Collector Saturation Region.6..8.4 I C = 0.5 A A A 4 A 0.6 0. 0. 0.5 5 0 I B, BASE CURRENT (ma) T J = 5 C 0 50 00.. T J = 5 C T J = 5 C.8.8 V, VOLTAGE (VOLTS).4 V BE(sat) @ I C /I B = 50 V CE(sat) @ I C /I B = 50 V BE @ V CE = V V, VOLTAGE (VOLTS).4 V BE(sat) @ I C /I B = 50 V CE(sat) @ I C /I B = 50 V BE @ V CE = V 0.6 0.6 0. 0.04 0. 0.06 0. 0. 0.4 0.6 4 0.04 Figure 9. On Voltages 0.06 0. 0. 0.4 0.6 4 6
NPN MJD PNP MJD7, TEMPERATURE COEFFICIENTS (mv/ C) V θ + 0.8 0-0.8 -.6 -.4 -. - 4-4.8 0.04 *APPLIED FOR I C /I B < h FE / * VC FOR V CE(sat) 5 C TO 50 C - 55 C TO 5 C VC FOR V BE 5 C TO 50 C - 55 C TO 5 C 0.06 0. 0. 0.4 0.6 4 V, TEMPERATURE COEFFICIENTS (mv/ C) θ + 0.8 0-0.8 -.6 -.4 -. - 4-4.8 0.04 *APPLIES FOR I C /I B < h FE / * VC FOR V CE(sat) VB FOR V BE 5 C TO 50 C 5 C TO 50 C - 55 C TO 5 C - 55 C TO 5 C 0.06 0. 0. 0.4 0.6 4 Figure 0. Temperature Coefficients 0 5 0 5, COLLECTOR CURRENT ( A) μ IC 0 4 0 0 0 0 0 REVERSE V CE = 0 V T J = 50 C 00 C FORWARD 5 C 0 - - 0.6-0.4-0. 0 + 0. + 0.4 + 0.6 + 0.8 + +. +.4 V BE, BASE-EMITTER VOLTAGE (VOLTS), COLLECTOR CURRENT ( A) μ IC 0 4 0 0 0 0 0 REVERSE V CE = 0 V T J = 50 C 00 C 5 C Figure. Collector CutOff Region FORWARD 0 - + 0.6 + 0.4 + 0. 0-0. - 0.4-0.6-0.8 - -. -.4 V BE, BASE-EMITTER VOLTAGE (VOLTS) PNP COLLECTOR NPN COLLECTOR BASE BASE 8 k 0 8 k 0 EMITTER EMITTER Figure. Darlington Schematic 7
ORDERING INFORMATION MJDG Device Package Type Package Shipping 75 Units / Rail NJVMJDG* 75 Units / Rail MJDG 69D 75 Units / Rail MJDRLG,800 Tape & Reel MJDT4G,500 Tape & Reel NJVMJDT4G*,500 Tape & Reel MJD7G 75 Units / Rail MJD7G 69D 75 Units / Rail MJD7RLG,800 Tape & Reel MJD7T4G,500 Tape & Reel NJVMJD7T4G*,500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable. 8
PACKAGE DIMENSIONS CASE ISSUE D L L4 b e E b 4 b A D B DETAIL A c 0.005 (0.) M C A C c H L GAUGE PLANE L L DETAIL A ROTATED 90 CW A H C Z SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y4.5M, 994.. CONTROLLING DIMENSION: INCHES.. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b, L and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.086 0.094.8.8 A 0.000 0.005 0.00 0. b 0.05 0.05 0.6 0.89 b 0.00 0.045 0.76.4 b 0.80 0.5 4.57 5.46 c 0.08 0.04 0.46 0.6 c 0.08 0.04 0.46 0.6 D 0.5 0.45 5.97 6. E 0.50 0.65 6.5 6.7 e 0.090 BSC.9 BSC H 0.70 0.40 9.40 0.4 L 0.055 0.070.40.78 L 0.08 REF.74 REF L 0.00 BSC 0.5 BSC L 0.05 0.050 0.89.7 L4 0.040.0 Z 0.55.9 SOLDERING FOOTPRINT* 6.0 0.44.58 0.0.0 0.8 STYLE : PIN. BASE. COLLECTOR. EMITTER 4. COLLECTOR 5.80 0.8.6 0.06 6.7 0.4 SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9
PACKAGE DIMENSIONS IPAK CASE 69D ISSUE C V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH. S T SEATING PLANE F 4 G A K D PL J 0. (0.005) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.5 0.45 5.97 6.5 B 0.50 0.65 6.5 6.7 C 0.086 0.094.9.8 D 0.07 0.05 0.69 0.88 E 0.08 0.0 0.46 0.58 F 0.07 0.045 0.94.4 G 0.090 BSC.9 BSC H 0.04 0.040 0.87.0 J 0.08 0.0 0.46 0.58 K 0.50 0.80 8.89 9.65 R 0.80 0.5 4.45 5.45 S 0.05 0.040 0.6.0 V 0.05 0.050 0.89.7 Z 0.55.9 STYLE : PIN. BASE. COLLECTOR. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 807 USA Phone: 067575 or 80044860 Toll Free USA/Canada Fax: 067576 or 80044867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 80089855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 790 90 Japan Customer Focus Center Phone: 8587050 0 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJD/D