PD 9698A DIGITAL AUDIO MOSFET IRFB422PbF Features Key parameters optimized for ClassD audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low Q RR for better THD and lower EMI 75 C operating junction temperature for ruggedness Can deliver up to 5W per channel into 4Ω load in halfbridge topology Key Parameters V DS V R DS(ON) typ. @ V 72.5 m: Q g typ. 5 nc Q sw typ. 8.3 nc R G(int) typ. 2.2 Ω T J max 75 C D G S TO22AB Description This Digital Audio MOSFET is specifically designed for ClassD audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low onresistance per silicon area. Furthermore, Gate charge, bodydiode reverse recovery and internal Gate resistance are optimized to improve key ClassD audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 75 C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. Absolute Maximum Ratings Parameter Notes through are on page 2 www.irf.com Units V DS DraintoSource Voltage V V GS GatetoSource Voltage ±2 I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 A I D @ T C = C Continuous Drain Current, V GS @ V 3 I DM Pulsed Drain Current c 57 P D @T C = 25 C Power Dissipation f 6 W P D @T C = C Power Dissipation f Linear Derating Factor 3.4 W/ C T J Operating Junction and 55 to 75 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) Mounting torque, 632 or M3 screw 3 lbxin (.Nxm) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase f 2.5 R θcs CasetoSink, Flat, Greased Surface.5 C/W R θja JunctiontoAmbient f 62 Max. 9/6/5
IRFB422PbF Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS DraintoSource Breakdown Voltage V V GS = V, I D = 25µA ΒV DSS / T J Breakdown Voltage Temp. Coefficient.9 V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance 58 72.5 mω V GS = V, I D = 3A e V GS(th) Gate Threshold Voltage 3. 5. V V DS = V GS, I D = 25µA V GS(th) / T J Gate Threshold Voltage Coefficient 3 mv/ C I DSS DraintoSource Leakage Current 2 µa V DS = V, V GS = V 25 V DS = V, V GS = V, T J = 25 C I GSS GatetoSource Forward Leakage 2 na V GS = 2V GatetoSource Reverse Leakage 2 V GS = 2V g fs Forward Transconductance S V DS = 5V, I D = 3A Q g Total Gate Charge 5 23 Q gs PreVth GatetoSource Charge 3.3 V DS = 8V Q gs2 PostVth GatetoSource Charge.4 nc V GS = V Q gd GatetoDrain Charge 6.9 I D = 3A Q godr Gate Charge Overdrive 3.4 See Fig. 6 and 9 Q sw Switch Charge (Q gs2 Q gd ) 8.3 R G(int) Internal Gate Resistance 2.2 Ω t d(on) TurnOn Delay Time 7.7 V DD = 5V, V GS = Ve t r Rise Time 28 I D = 3A t d(off) TurnOff Delay Time 4 ns R G = 2.5Ω t f Fall Time 3.9 C iss Input Capacitance 55 V GS = V C oss Output Capacitance 66 pf V DS = 5V C rss Reverse Transfer Capacitance 35 ƒ =.MHz, See Fig.5 C oss Effective Output Capacitance 35 V GS = V, V DS = V to 8V L D Internal Drain Inductance 4.5 Between lead, D nh 6mm (.25in.) L S Internal Source Inductance 7.5 from package G Avalanche Characteristics Parameter E AS Single Pulse Avalanche Energyd 25 mj I AR Avalanche Currentg See Fig. 4, 5, 7a, 7b A E AR Repetitive Avalanche Energy g mj Diode Characteristics Parameter Min. Typ. Max. Units I S @ T C = 25 C Continuous Source Current 8 (Body Diode) A I SM Pulsed Source Current 57 (Body Diode)c V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time 4 62 ns Q rr Reverse Recovery Charge 69 nc Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.32mH, R G = 25Ω, I AS = 3A. ƒ Pulse width 4µs; duty cycle 2%. and center of die contact MOSFET symbol Conditions showing the integral reverse pn junction diode. T J = 25 C, I F = 3A di/dt = A/µs e R θ is measured at T J of approximately 9 C. Limited by Tjmax. See Figs. 4, 5, 7a, 7b for repetitive avalanche information 2 www.irf.com Typ. Max. Units T J = 25 C, I S = 3A, V GS = V e S
C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (Α) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) IRFB422PbF VGS TOP 5V 2V V 9.V 8.V 7.V BOTTOM 6.V VGS TOP 5V 2V V 9.V 8.V 7.V BOTTOM 6.V 6.V 6.V 6µs PULSE WIDTH Tj = 25 C V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics 6µs PULSE WIDTH Tj = 75 C V DS, DraintoSource Voltage (V) Fig 2. Typical Output Characteristics. 3. 2.5 I D = 3A V GS = V. T J = 75 C 2.. T J = 25 C.5 V DS = 5V 6µs PULSE WIDTH 2 4 6 8 V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics..5 6 4 2 2 4 6 8 2 4 6 8 T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 2 6 I D = 3A V DS = 8V VDS= 5V VDS= 2V Ciss 2 Coss Crss 8 4 5 5 2 25 Q V DS, DraintoSource Voltage (V) G Total Gate Charge (nc) Fig 5. Typical Capacitance vs.draintosource Voltage Fig 6. Typical Gate Charge vs.gatetosource Voltage www.irf.com 3
I D, Drain Current (A) V GS (th) Gate threshold Voltage (V) I D, DraintoSource Current (A) IRFB422PbF. OPERATION IN THIS AREA LIMITED BY R DS (on) I SD, Reverse Drain Current (A). T J = 75 C. T J = 25 C V GS = V..5..5 Tc = 25 C Tj = 75 C Single Pulse µsec msec msec DC V SD, SourcetoDrain Voltage (V) V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2 5. 6 2 4. I D = 25µA 8 3. 4 25 5 75 25 5 75 T J, Junction Temperature ( C) 2. 75 5 25 25 5 75 25 5 75 T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thjc ).. D =.5.2..5.2. R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri.74.325 Ci i/ri SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc E6 E5... t, Rectangular Pulse Duration (sec) R 4 Ri ( C/W) τi (sec) R 4.489. Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 4 www.irf.com τ 4 τ 4 τ C τ.3856.62.353.7
E AR, Avalanche Energy (mj) R DS (on), Drainto Source On Resistance (Ω) Avalanche Current (A) E AS, Single Pulse Avalanche Energy (mj) IRFB422PbF.5.4 I D = 3A 2 I D TOP 3.2A 5.7A BOTTOM 3A.3 8.2. T J = 25 C T J = 25 C 6 8 2 4 6 V GS, GatetoSource Voltage (V) 6 4 2 25 5 75 25 5 75 Starting T J, Junction Temperature ( C) Fig 2. OnResistance Vs. Gate Voltage Duty Cycle = Single Pulse Fig 3. Maximum Avalanche Energy Vs. Drain Current..5. Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 3 25 2 5 5.E6.E5.E4.E3.E2.E TOP Single Pulse BOTTOM % Duty Cycle I D = 3A 25 5 75 25 5 75 Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy Vs. Temperature tav (sec) Fig 4. Typical Avalanche Current Vs.Pulsewidth Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at www.irf.com). Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 7a, 7b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure ) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av www.irf.com 5
IRFB422PbF D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 6. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω V DD A I AS Fig 7a. Unclamped Inductive Test Circuit Fig 7b. Unclamped Inductive Waveforms L D V DS V DD V DS 9% D.U.T % V GS Pulse Width < µs Duty Factor < % V GS t d(on) t r t d(off) t f Fig 8a. Switching Time Test Circuit Fig 8b. Switching Time Waveforms Vds Id Vgs K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 9a. Gate Charge Test Circuit Fig 9b Gate Charge Waveform 6 www.irf.com
TO22AB Package Outline (Dimensions are shown in millimeters (inches)) IRFB422PbF TO22AB Part Marking Information EXAMPLE: THIS IS AN IRF LOT CODE 789 ASSEMBLED ON WW 9, 2 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead Free" INTERNATIONAL RECTIFIER LOGO AS S E MB LY LOT CODE PART NUMBER YEAR = 2 DATE CODE WEEK 9 LINE C TO22AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 25275 TAC Fax: (3) 252793 Visit us at www.irf.com for sales contact information. 9/5 www.irf.com 7
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/