N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP6N60FI 600 V < 1.2 Ω 3.8 A TYPICAL R DS(on) =1Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 o C APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT ISOWATT220 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 600 V V DG R Drain- gate Voltage (R GS =20kΩ) 600 V V GS Gate-source Voltage ± 20 V I D Drain Current (continuous) at T c =25 o C 3.8 A I D Drain Current (continuous) at T c =100 o C 2.4 A IDM( ) Drain Current (pulsed) 24 A Ptot Total Dissipation at Tc =25 o C 40 W Derating Factor 0.32 W/ o C VISO Iulation Withstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 Tj Max. Operating Junction Temperature 150 ( ) Pulse width limited by safe operating area o C o C May 1993 1/9
THERMAL DATA R thj-case R thj-amb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.12 62.5 0.5 300 o C/W o C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 6 A (pulse width limited by T j max, δ <1%) E AS Single Pulse Avalanche Energy 370 mj (starting T j =25 o C, I D =I AR,V DD =25V) EAR Repetitive Avalanche Energy 17 mj (pulse width limited by Tj max, δ <1%) I AR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 3.7 A ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified) OFF V (BR)DSS Drain-source Breakdown Voltage I D =250µA V GS = 0 600 V I DSS I GSS Zero Gate Voltage Drain Current (VGS =0) Gate-body Leakage Current (V DS =0) V DS =MaxRating VDS = Max Rating x 0.8 Tc =125 o C 250 1000 V GS = ± 20 V ± 100 na µa µa ON ( ) V GS(th) Gate Threshold Voltage V DS =V GS I D =250µA 2 3 4 V RDS(on) Static Drain-source On Resistance VGS =10V ID=3A VGS =10V ID=3A Tc=100 o C ID(on) On State Drain Current VDS >ID(on) xrds(on)max VGS =10V 1 1.2 2.4 Ω Ω 6 A DYNAMIC g fs ( ) Forward Traconductance V DS >I D(on) xr DS(on)max I D =3A 2 4.8 S Ciss Coss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance VDS =25V f=1mhz VGS = 0 1150 160 75 1500 240 110 pf pf pf 2/9
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON t d(on) t r Turn-on Time Rise Time V DD =300V I D =3A R G =50 Ω V GS =10V (see test circuit, figure 3) (di/dt)on Turn-on Current Slope VDD =480V ID=6A RG=50 Ω VGS =10V (see test circuit, figure 5) Q g Q gs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge 50 140 V DD = 480 V I D =6A V GS =10V 78 8 41 65 175 240 A/µs 98 nc nc nc SWITCHING OFF tr(voff) tf t c Off-voltage Rise Time Fall Time Cross-over Time VDD =480V ID=6A RG=50 Ω VGS =10V (see test circuit, figure 5) 100 27 145 125 34 180 SOURCE DRAIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD =6A VGS =0 2 V t rr Reverse Recovery I SD =6A di/dt=100a/µs 750 Time V DD = 100 V T j =150 o C Qrr IRRM Reverse Recovery Charge Reverse Recovery (see test circuit, figure 5) 13.5 38 µc A Current ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area 3.8 24 A A Safe Operating Area Thermal Impedance 3/9
Derating Curve Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9
Capacitance Variatio Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9
Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms 6/9
Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9
ISOWATT220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 3.66 Ø 3 3.2 0.118 0.126 H G B D A E L6 L7 L3 Ø F1 F F2 G1 1 2 3 L2 L4 P011G 8/9
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