Advanced Data Storage Materials and Characterization Techniques

Transcription

1 Advanced Data Storage Materials and Characterization Techniques

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3 MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 803 Advanced Data Storage Materials and Characterization Techniques Symposia held December 1-4, 2003, Boston, Massachusetts, U.S.A. EDITORS: SYMPOSIUM GG Joachim W. Ahner Seagate Research Pittsburgh, Pennsylvania, U.S.A. Jeremy Levy University of Pittsburgh Pittsburgh, Pennsylvania, U.S.A. SYMPOSIUM HH Lambertus Hesselink Stanford University Stanford, California, U.S.A. Andrei Mijiritskii Philips Research Laboratories Eindhoven, The Netherlands IMIR1SI Materials Research Society Warrendale, Pennsylvania

4 cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City Cambridge University Press 32 Avenue of the Americas, New York ny , USA Published in the United States of America by Cambridge University Press, New York Information on this title: / Materials Research Society 506 Keystone Drive, Warrendale, pa Materials Research Society 2004 This publication is in copyright. Subject to statutory exception and to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written permission of Cambridge University Press. This publication has been registered with Copyright Clearance Center, Inc. For further information please contact the Copyright Clearance Center, Salem, Massachusetts. First published 2004 First paperback edition 2012 Single article reprints from this publication are available through University Microfilms Inc., 300 North Zeeb Road, Ann Arbor, mi CODEN: MRSPDH isbn Paperback Cambridge University Press has no responsibility for the persistence or accuracy of URLs for external or third-party internet websites referred to in this publication, and does not guarantee that any content on such websites is, or will remain, accurate or appropriate.

5 CONTENTS Preface Materials Research Society Symposium Proceedings xi xiii SYMPOSIUM GG Imaging, Manipulating, and Analyzing With Nanometer Precision: Application of the Nanoworkbench 3 Olivier Guise, Joachim Ahner, Jeremy Levy, and John T. Yates Jr. Quantifying Field-Induced Contrast Effects in Photoelectron Emission Microscopy 9 K. Siegrist, V.W. Ballarotto, and E.D. Williams Heteroepitaxy of InSe/GaSe on Si(lll) Substrates 15 J. Jasinski, Z. Liliental-Weber, A. Chaiken, G.A. Gibson, K. Nauka, C.C. Yang, and R. Bicknell Visualization of Electrons and Holes Localized in the Gate Thin Film of Metal-Oxide Nitride-Oxide Semiconductor Type Flash Memory by Using Scanning Nonlinear Dielectric Microscopy 21 Koichiro Honda and Yasuo Cho Temperature Controlled Scanning Nonlinear Dielectric Microscopy 27 K. Ohara and Y. Cho Neutron Studies of Magnetic Recording Media 35 S.L. Lee, T. Thomson, F.Y. Ogrin, C. Oates, M. Wismayer, C. Dewhurst, R. Cubitt, and S. Harkness Bias-Voltage Dependence in Atomic-Scale Spin Polarized Scanning Tunneling Microscopy of Mn 3 N 2 (010) 41 Arthur R. Smith, Rong Yang, and Haiqiang Yang

6 SYMPOSIUM HH * Innovation Providing New Multiple Functions in Phase- Change Materials to Achieve Cognitive Computing 49 Stanford R. Ovshinsky and Boil Pashmakov * Understanding the Electro-Thermal and Phase-Transformation Processes in Phase-Change Materials for Data Storage Applications 61 CD. Wright, M. Armand, M.M. Aziz, S. Senkader, and W.Yu * Conductive Transparent Probes and Their Application to High-Density Phase-Change Data Storage by Using Current Injection 73 Tooru Murashita Amorphous-to-Polycrystal Transition in GeSbTe Thin Films 83 S. Privitera, C. Bongiorno, E. Rimini, R. Zonca, A. Pirovano, and R. Bez Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory 89 Rong Zhao, Tow Chong Chong, Lu Ping Shi, Pik Kie Tan, Hao Meng, Xiang Hu, Ke Bin Li, and An Yan Du Thermal Analysis of Nonvolatile and Non Rotation Phase Change Memory Cell 95 L.P. Shi, T.C. Chong, J.M. Li, H.X. Yang, and J.Q. Mou * Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications 101 Tyler A. Lowrey, Stephen J. Hudgens, Wally Czubatyj, Charles H. Dennison, Sergey A. Kostylev, and Guy C. Wicker Local Surface Modification of ECR Sputtered Carbon Film and Its Application to Ultra High Density Data Storage 113 S. Tsuchitani, M. Isozaki, R. Kaneko, I. Tanaka, and S. Hirono *Invited Paper VI

7 Room Temperature Dielectric Function of Low Dimensional TlMeX Nazim Mamedov, Kazuki Wakita, Seiji Akita, and Yoshikazu Nakayama Effect of As-Deposited Residual Stress on Transition Temperature of VO 2 Films 125 Kuang Yue Tsai, Tsung-Shune Chin, Han-Ping D. Shieh, and Cheng Hsin Ma Memory Effects in Manganese Perovskites 131 N. Noginova, G. Chelule, and G.B. Loutts * Optical Properties and Phase Transformation Kinetics of Ge-Sb-Te-(N) Alloy Thin Films Investigated by Ellipsometry 137 Sang Youl Kim * Simulation of Crystallization Processes in Phase Change Optical Discs 149 Berangere Hyot, Ludovic Poupinet, and Pierre Desre TEM Study of InSbTe Crystal Morphology as a Function of Crystallization Conditions 161 Marcel A. Verheijen, Andrei Mijiritskii, and Bart J. Kooi In Situ TEM Study of the Crystallization of Thin Films Composed of Sb 36 Te With Ge 167 Bart J. Kooi, Willemijn M.G. Groot, and Jeff Th.M. De Hosson Modeling InSe Phase-Change Materials 173 K. Kohary, V.M. Burlakov, D. Nguyen-Manh, and D.G. Pettifor Kinetics of Crystal Nucleation and Growth in Thin Films of Amorphous Te Alloys Measured by Atomic Force Microscopy 179 J. Kalb, F. Spaepen, and M. Wuttig * Effect of Ionic Bond in Recording Materials on Characteristics of Phase-Change Optical Disk 185 Motoyasu Terao * Invited Paper vn

8 * Media Technologies for 20 GB Single Layer and 36 GB Dual Layer Phase Change Rewritable Disc "HDDVD-ARW", 193 Sumio Ashida, Keiichiro Yusu, Tsukasa Nakai, Takayuki Tsukamoto, Katsutaro Ichihara, Noritake Ohmachi, Naoki Morishita, Akihito Ogawa, and Naomasa Nakamura * Key Technology for Ultra Density Optical 203 Robert E. Somekh and Clare E. Davies Mechanisms of Initialization of Doped Sb-Te Phase-Change Media 213 Samantha J. Towlson, Clifford A. Elwell, Clare E. Davies, and A. Lindsay Greer Optical Properties of Multi-Layer Chalcogenide Thin Film for Optical Recording Media 219 Myung-Jin Kang, Chan-Gyung Park, and Se-Young Choi * Explosive Crystallization in Eutectic Materials of Phase Change Optical Memory 225 Masahiro Okuda, Hirokazu Inaba, and Shouji Usuda * Characterization of Ultra-Fast Phase Change Optical Disk With GaSb Material 233 Kazunori Ito, Hiroko Tashiro, Makoto Harigaya, Eiko Suzuki, Katsuhiko Tani, Noriyuki Yiwata, Nobuaki Toyoshima, Akiko Kitano, and Kenichi Kato Femtosecond Laser-Induced Crystallization in As-Deposited Ge!Sb 2 Te 4 Films 239 Qin F. Wang, Lu P. Shi, Su M. Huang, Xiang S. Miao, Kai P. Wong, and Tow C. Chong Structure Analysis of Amorphous Thin Films of GeSbTe Compounds by Grazing Incidence X-ray Scattering 245 Masugu Sato, Toshiyuki Matsunaga, Takashi Kouzaki, and Noboru Yamada * Invited Paper Vlll

9 * Multi Layer Disk Design for Near Field Phase-Change Recording 251 Koichiro Kishima, Isao Ichimura, Kimihiro Saito, Kenji Yamamoto, Atsushi Iida, and Kiyoshi Osato Nonlinear Characteristics of Super Resolution Chalcogenide Thin Film 259 Se-Young Kim, Myung-Jin Kang, and Se-Young Choi Design of Holographic Recording Conditions With Optical Densities of Thick Azopolymer Films 265 Shin Yasuda, Katsunori Kawano, Jiro Minabe, Tatsuya Maruyama, Kazuhiro Hayashi, and Yasuhiro Ogasawara Application of High Throughput Methods to the Development of Materials for Non-Magnetic Storage 271 C. Eric Ramberg, Y. Wang, Q. Fan, E. McDermott, J. Wang, K. Kenyon, M. Field, M. Hornbostel, S. Guan, and S. Nguyen Author Index 277 Subject Index 279 *Invited Paper IX

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11 PREFACE Data storage has seen tremendous growth in the past decades, driven by ever expanding needs for processing and storage of business and personal data. A variety of storage technologies have been developed and impressive results in storage capacities and data rates have been achieved. This success is partiallay due to significant progress in a number of other fields, such as the development and perfection of characterization techniques for both storage media and systems. In the view of dramatically expanding needs for processing and storage of multi-media content as well as digitalization of complex business processes, and overall technological progress, demand for yet higher storage capacities and data transfer rates can be anticipated. Methods for realizing these needs are smart access systems and multiple arrays of storage elements, as well as by decreasing the size of data bits or storage elements and by increasing the speed by which the logic value of the bits are changed. These requirements can only be achieved if the storage medium meets a set of stringent requirements. Therefore, detailed understanding of materials issues and the availability of advanced characterization techniques and methods have become crucial for developing such high-performance systems. This book contains selected papers that have been presented within the framework of two MRS symposia, Symposium GG, "Advanced Characterization Techniques for Data Storage Materials," and Symposium HH, "Phase Change and Nonmagnetic Materials for Data Storage," held December \-A at the 2003 MRS Fall Meeting in Boston, Massachusetts. The HH symposium focused on phase change and nonmagnetic materials for data storage. The invention of phase change materials for application to data storage dates back to the 1960's and is associated with the pioneering work carried out by S. Ovshinsky and his co-workers. They invented media in which optical properties can be (reversibly) changed under the influence of light, providing the backbone of two major storage technologies. One is electronic storage based on solid-state memory devices such as Ovonic Unified Memories (OUM). The other one is optical storage with write-once and rewritable optical discs such as the commercially well-known CD-RW, DVD+RW, DVD-RW, and DVD-RAM systems as well as the recently introduced new UDO and BD-RE storage formats. The symposium has brought together leading researchers working on materials issues related to electronic and optical phase change storage media. From a materials perspective, similar issues are researched in both types of storage technologies. These include crystallization process, interface stability, and thermal properties, to name just a few. The results published in this book cover both applied and fundamental aspects of storage properties and processes related to phase change storage. The GG symposium dealt with advanced characterization techniques for magnetic data storage materials. It is well known that as the size of material objects approaches nanometer dimensions, the material's structural and electronic properties change. This is related to a number of factors including quantum size effects and the enhancement of the surface/volume ratio with diminishing size. The investigation of these effects and the impact on future recording media will become crucial in the near future, when recording densities approach densities of Terabit/sq.inch. Therefore, the development of novel instrumentation to explore physical properties at these length XI

12 scales will become more important. The results published in this book cover advanced characterization techniques including imaging, manipulation and chemical imaging of magnetic, phase change and oxide materials. SYMPOSIUM GG Joachim W. Ahner Jeremy Levy SYMPOSIUM HH Lambertus Hesselink Andrei Mijiritskii March 2004

13 MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume 762 Amorphous and Nanocrystalline Silicon-Based Films 2003, J.R. Abelson, G. Ganguly, H. Matsumura, J. Robertson, E. Schiff, 2003, ISBN: Volume 763 Compound Semiconductor Photovoltaics, R. Noufi, D. Cahen, W. Shafarman, L. Stolt, 2003, ISBN: Volume 764 New Applications for Wide-Bandgap Semiconductors, SJ. Pearton, J. Han, A.G. Baca, J-I. Chyi, W.H. Chang, 2003, ISBN: Volume 765 CMOS Front-End Materials and Process Technology, T-J. King, B. Yu, R.J.P. Lander, S. Saito, 2003, ISBN: Volume 766 Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics 2003, A. McKerrow, J. Leu, O. Kraft, T. Kikkawa, 2003, ISBN: Volume 767 Chemical-Mechanical Planarization, M. Oliver, D. Boning, D. Stein, K. Devriendt, 2003, ISBN: Volume 768 Integration of Heterogeneous Thin-Film Materials and Devices, H.A. Atwater, M. Levy, M.I. Current, T. Sands, 2003, ISBN: Volume 769 Flexible Electronics Materials and Device Technology, B.R. Chalamala, B.E. Gnade, N. Fruehauf, J. Jang, 2003, ISBN: Volume 770 Optoelectronics of Group-IV-Based Materials, T. Gregorkiewicz, R.G. Elliman, P.M. Fauchet, J.A. Hutchby, 2003, ISBN: Volume 771 Organic and Polymeric Materials and Devices, P.W.M. Blom, N.C. Greenham, CD. Dimitrakopoulos, CD. Frisbie, 2003, ISBN: Volume 772 Nanotube-Based Devices, P. Bernier, S. Roth, D. Carroll, G-T. Kim, 2003, ISBN: Volume 773 Biomicroelectromechanical Systems (BioMEMS), C Ozkan, J. Santini, H. Gao, G. Bao, 2003, ISBN: Volume 774 Materials Inspired by Biology, J.L. Thomas, L. Gower, K.L. Kiick, 2003, ISBN: Volume 775 Self-Assembled Nanostructured Materials, CJ. Brinker, Y. Lu, M. Antonietti, C Bai, 2003, ISBN: Volume 776 Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing, O.D. Velev, T.J. Bunning, Y. Xia, P. Yang, 2003, ISBN: X Volume 777 Nanostructuring Materials with Energetic Beams, S. Roorda, H. Bernas, A. Meldrum, 2003, ISBN: Volume 778 Mechanical Properties Derived from Nanostructuring Materials, H. Kung, D.F. Bahr, N.R. Moody, K.J. Wahl, 2003, ISBN: Volume 779 Multiscale Phenomena in Materials Experiments and Modeling Related to Mechanical Behavior, K.J. Hemker, D.H. Lassila, L.E. Levine, H.M. Zbib, 2003, ISBN: Volume 780 Advanced Optical Processing of Materials, I.W. Boyd, M. Dinescu, A.V. Rode, D.B. Chrisey, 2003, ISBN: Volume 78IE Mechanisms in Electrochemical Deposition and Corrosion, J.C Barbour, R.M. Penner, P.C Searson, 2003, ISBN: Volume 782 Micro- and Nanosystems, D. LaVan, M. McNie, A. Ayon, M. Madou, S. Prasad, 2004, ISBN: Volume 783 Materials, Integration and Packaging Issues for High-Frequency Devices, P. Muralt, Y.S. Cho, J-P. Maria, M. Klee, C Hoffmann, CA. Randall, 2004, ISBN: Volume 784 Ferroelectric Thin Films XII, S. Hoffmann-Eifert, H. Funakubo, A.I. Kingon, I.P. Koutsaroff, V. Joshi, 2004, ISBN:

14 MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS Volume 785 Materials and Devices for Smart Systems, Y. Furuya, E. Quandt, Q. Zhang, K. Inoue, M. Shahinpoor, 2004, ISBN: Volume 786 Fundamentals of Novel Oxide/Semiconductor Interfaces, C.R. Abernathy, E. Gusev, D.G. Schlom, S. Stemmer, 2004, ISBN: Volume 787 Molecularly Imprinted Materials 2003, P. Kofinas, MJ. Roberts, B. Sellergren, 2004, ISBN: Volume 788 Continuous Nanophase and Nanostructured Materials, S. Komarneni, J.C. Parker, J. Watkins, 2004, ISBN: Volume 789 Quantum Dots, Nanoparticles and Nanowires, P. Guyot-Sionnest, NJ. Halas, H. Mattoussi, Z.L. Wang, U. Woggon, 2004, ISBN: X Volume 790 Dynamics in Small Confining Systems 2003, J.T. Fourkas, P. Levitz, M. Urbakh, K.J. Wahl, 2004, ISBN: Volume 791 Mechanical Properties of Nanostructured Materials and Nanocomposites, R. Krishnamoorti, E. Lavernia, I. Ovid'ko, C.S. Pande, G. Skandan, 2004, ISBN: Volume 792 Radiation Effects and Ion-Beam Processing of Materials, L. Wang, R. Fromknecht, L.L. Snead, D.F. Downey, H. Takahashi, 2004, ISBN: X Volume 793 Thermoelectric Materials 2003 Research and Applications, G.S. Nolas, J. Yang, T.P. Hogan, D.C. Johnson, 2004, ISBN: Volume 794 Self-Organized Processes in Semiconductor Heteroepitaxy, R.S. Goldman, R. Noetzel, A.G. Norman, G.B. Stringfellow, 2004, ISBN: Volume 795 Thin Films Stresses and Mechanical Properties X, S.G. Corcoran, Y-C. Joo, N.R. Moody, Z. Suo, 2004, ISBN: Volume 796 Critical Interfacial Issues in Thin-Film Optoelectronic and Energy Conversion Devices, D.S. Ginley, S.A. Carter, M. Gratzel, R.W. Birkmire, 2004, ISBN: Volume 797 Engineered Porosity for Microphotonics and Plasmonics, R. Wehrspohn, F. Garcial-Vidal, M. Notomi, A. Scherer, 2004, ISBN: Volume 798 GaN and Related Alloys 2003, H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean, 2004, ISBN: Volume 799 Progress in Compound Semiconductor Materials III Electronic and Optoelectronic Applications, D. Friedman, M.O. Manasreh, I. Buyanova, F.D. Auret, A. Munkholm, 2004, ISBN: Volume 800 Synthesis, Characterization and Properties of Energetic/Reactive Nanomaterials, R.W. Armstrong, N.N. Thadhani, W.H. Wilson, JJ. Gilman, Z. Munir, R.L. Simpson, 2004, ISBN: Volume 801 Hydrogen Storage Materials, M. Nazri, G-A. Nazri, R.C. Young, C. Ping, 2004, ISBN: Volume 802 Actinides Basic Science, Applications and Technology, L. Soderholm, J. Joyce, M.F. Nicol, D. Shuh, J.G. Tobin, 2004, ISBN: Volume 803 Advanced Data Storage Materials and Characterization Techniques, J. Ahner, L. Hesselink, J. Levy, 2004, ISBN: Volume 804 Combinatorial and Artificial Intelligence Methods in Materials Science II, R.A. Potyrailo, A. Karim, Q. Wang, T. Chikyow, 2004, ISBN: Volume 805 Quasicrystals 2003 Preparation, Properties and Applications, E. Belin-Ferre, M. Feuerbacher, Y. Ishii, D. Sordelet, 2004, ISBN: Volume 806 Amorphous and Nanocrystalline Metals, R. Busch, T. Hufnagel, J. Eckert, A. Inoue, W. Johnson, A.R. Yavari, 2004, ISBN: X Volume 807 Scientific Basis for Nuclear Waste Management XXVII, V.M. Oversby, L.O. Werme, 2004, ISBN: Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society