STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF
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1 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Trench gate field-stop IGBT, H series 600 V, 5 A high speed Datasheet - production data Features High speed switching Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated Ultrafast soft recovery antiparallel diode Applications Motor control UPS, PFC Figure 1. Internal schematic diagram Description G (1) C (2, TAB) These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order codes Marking Packages Packing STGB5H60DF GB5H60DF D²PAK Tape and reel STGD5H60DF GD5H60DF DPAK Tape and reel STGF5H60DF GF5H60DF TO-220FP Tube STGP5H60DF GP5H60DF TO-220 Tube May 2015 DocID Rev 3 1/30 This is information on a product in full production.
2 Contents STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information D²PAK package information DPAK package information D²PAK and DPAK packing information TO-220FP package information TO-220 package information Revision history /30 DocID Rev 3
3 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter D²PAK TO-220 DPAK TO- 220FP Unit V CES Collector-emitter voltage (V GE =0) 600 V Continuous collector current at T C =25 C (1) I C A Continuous collector current at T C = 100 C 5 5 (1) I CP (2) Pulsed collector current (1) A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C =100 C 5 5 (1) Continuous forward current T C =25 C (1) A (2) I FP Pulsed forward current (1) A Insulation withstand voltage (RMS) from all V ISO three leads to external heat sink 2500 V (t = 1 s, T C =25 C) P TOT Total dissipation at T C =25 C W T STG Storage temperature range - 55 to 150 T J Operating junction temperature - 55 to 175 C 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter D²PAK TO-220 DPAK TO- 220FP Unit R thjc Thermal resistance junction-case IGBT R thjc Thermal resistance junction-case diode R thja Thermal resistance junction-ambient C/W DocID Rev 3 3/30 30
4 Electrical characteristics STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 600 V V GE = 15 V, I C = 5 A V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 5 A T J = 125 C V GE = 15 V, I C = 5 A T J = 175 C V GE(th) Gate threshold voltage V CE = V GE, I C = 250 µa V I CES Collector cut-off current (V GE = 0) V CE = 600 V 25 µa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V ±250 na V Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = 0 Reverse transfer capacitance pf Q g Total gate charge nc Q ge Gate-emitter charge V CC = 480 V, I C = 5 A, V GE = 15 V nc Q gc Gate-collector charge nc 4/30 DocID Rev 3
5 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t r Current rise time V CE = 400 V, I C = 5 A, R G = 47 Ω, V GE = 15 V ns (di/dt)on Turn-on current slope A/µs t d(on) Turn-on delay time V CE = 400 V, I C = 5 A, ns t r Current rise time R G = 47 Ω, V GE = 15 V ns (di/dt)on Turn-on current slope T J = 175 C A/µs t r(voff) Off voltage rise time ns t d(off) Turn-off delay time V CE = 400 V, I C = 5 A, R G = 47 Ω, V GE = 15 V ns t f Current fall time ns t r(voff) Off voltage rise time V CE = 400 V, I C = 5 A, ns t d(off) Turn-off delay time R G = 47 Ω, V GE = 15 V ns t f Current fall time T J = 175 C ns t sc Short-circuit withstand time V CC 360 V, V GE = 15 V, R G = 47 Ω µs Table 7. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon (1) Turn-on switching losses µj (2) V CE = 400 V, I C = 5 A, E off Turn-off switching losses R G = 47 Ω, V GE = 15 V µj E ts Total switching losses µj Eon (1) Turn-on switching losses V CE = 400 V, I C = 5 A, µj (2) E off Turn-off switching losses R G = 47 Ω, V GE = 15 V µj E ts Total switching losses T J = 175 C µj 1. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. DocID Rev 3 5/30 30
6 Electrical characteristics STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Table 8. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit V F Forward on-voltage I F = 5 A I F = 5 A, T J = 175 C V t rr Reverse recovery time ns Q rr Reverse recovery charge V CC = 400 V; I F = 5 A; di F /dt = 100 A / µs nc I rrm Reverse recovery current A t rr Reverse recovery time V CC = 400 V; I F = 5 A; ns Q rr Reverse recovery charge di F /dt = 100 A / µs nc I rrm Reverse recovery current T J = 175 C A 6/30 DocID Rev 3
7 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature for D 2 PAK and TO-220 Figure 3. Collector current vs. case temperature for D 2 PAK and TO-220 Figure 4. Power dissipation vs. case temperature for DPAK Figure 5. Collector current vs. case temperature for DPAK DocID Rev 3 7/30 30
8 Electrical characteristics STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Figure 6. Power dissipation vs. case temperature for TO-220FP Figure 7. Collector current vs. case temperature for TO-220FP Figure 8. Output characteristics (T J = 25 C) Figure 9. Output characteristics (T J = 175 C) Figure 10. V CE(sat) vs. junction temperature Figure 11. V CE(sat) vs. collector current 8/30 DocID Rev 3
9 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Electrical characteristics Figure 12. Collector current vs. switching frequency for D 2 PAK, DPAK and TO-220 Figure 13. Collector current vs. switching frequency for TO-220FP Figure 14. Forward bias safe operating area for D 2 PAK, DPAK and TO-220 Figure 15. Forward bias safe operating area for TO-220FP Figure 16. Transfer characteristics Figure 17. Diode V F vs. forward current DocID Rev 3 9/30 30
10 Electrical characteristics STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Figure 18. Normalized V GE(th) vs junction temperature Figure 19. Normalized V (BR)CES vs. junction temperature Figure 20. Capacitance variation Figure 21. Gate charge vs. gate-emitter voltage Figure 22. Switching loss vs collector current Figure 23. Switching loss vs gate resistance 10/30 DocID Rev 3
11 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Electrical characteristics Figure 24. Switching loss vs temperature Figure 25. Switching loss vs collector-emitter voltage Figure 26. Short circuit time and current vs V GE Figure 27. Switching times vs. collector current Figure 28. Switching times vs. gate resistance Figure 29. Reverse recovery current vs. diode current slope DocID Rev 3 11/30 30
12 Electrical characteristics STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Figure 30. Reverse recovery time vs. diode current slope Figure 31. Reverse recovery charge vs. diode current slope Figure 32. Reverse recovery energy vs. diode current slope 12/30 DocID Rev 3
13 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Electrical characteristics Figure 33. Thermal impedance for D 2 PAK, DPAK and TO-220 IGBT Figure 34. Thermal impedance for D 2 PAK, DPAK and TO-220 diode DocID Rev 3 13/30 30
14 Electrical characteristics STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Figure 35. Thermal impedance for TO-220FP IGBT Figure 36. Thermal impedance for TO-220FP diode 14/30 DocID Rev 3
15 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Test circuits 3 Test circuits Figure 37. Test circuit for inductive load switching Figure 38. Gate charge test circuit Figure 39. Switching waveform Figure 40. Diode reverse recovery waveform DocID Rev 3 15/30 30
16 Package information STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 D²PAK package information Figure 41. D²PAK (TO-263) package outline 16/30 DocID Rev 3
17 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Package information Table 9. D²PAK (TO-263) package mechanical data Dim. mm Min. Typ. Max. A A b b c c D D D E E E e 2.54 e H J L L L R 0.4 V2 0 8 DocID Rev 3 17/30 30
18 Package information STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Figure 42. D²PAK recommended footprint (a) a. All dimension are in millimeters 18/30 DocID Rev 3
19 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Package information 4.2 DPAK package information Figure 43. DPAK (TO-252) type A2 package outline DocID Rev 3 19/30 30
20 Package information STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Table 10. DPAK (TO-252) type A2 package mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D E E e e H L L L L R 0.20 V /30 DocID Rev 3
21 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Package information Figure 44. DPAK (TO-252) recommended footprint (b) b. All dimensions are in millimeters DocID Rev 3 21/30 30
22 Package information STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF 4.3 D²PAK and DPAK packing information Figure 45. D²PAK and DPAK tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 22/30 DocID Rev 3
23 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Package information REEL DIMENSIONS Figure 46. D²PAK and DPAK reel outline T 40 mm min. access hole at slot location B A D C N G measured at hub Full radius Tape slot in core for tape start 25 mm min. width AM08851v2 Table 11. D²PAK tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W DocID Rev 3 23/30 30
24 Package information STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 B C D D 20.2 D1 1.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W /30 DocID Rev 3
25 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Package information 4.4 TO-220FP package information Figure 47. TO-220FP package outline _Rev_K_B DocID Rev 3 25/30 30
26 Package information STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Table 13. TO-220FP package mechanical data Dim. mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia /30 DocID Rev 3
27 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Package information 4.5 TO-220 package information Figure 48. TO-220 type A package outline DocID Rev 3 27/30 30
28 Package information STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Table 14. TO-220 type A package mechanical data Dim. mm Min. Typ. Max. A b b c D D E e e F H J L L L L ØP Q /30 DocID Rev 3
29 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Revision history 5 Revision history Table 15. Document revision history Date Revision Changes 28-Nov Initial release. 23-Feb May Updated Section 2: Electrical characteristics and Section 4: Package information. Minor text changes. Text and formatting changes throughout document In Section 1: Electrical ratings: - updated Table 2 and Table 3 In Section 2: Electrical characteristics: - updated Table 4, Table 5, Table 6, Table 7 and Table 8 Added Section 2.1: Electrical characteristics (curves) Updated Section 4.2: DPAK package information Document status promoted from preliminary data to production data DocID Rev 3 29/30 30
30 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 30/30 DocID Rev 3
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N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED
MC33079. Low noise quad operational amplifier. Features. Description
Low noise quad operational amplifier Datasheet production data Features Low voltage noise: 4.5 nv/ Hz High gain bandwidth product: 15 MHz High slew rate: 7 V/µs Low distortion: 0.002% Large output voltage
L6234. Three phase motor driver. Features. Description
Three phase motor driver Features Supply voltage from 7 to 52 V 5 A peak current R DSon 0.3 Ω typ. value at 25 C Cross conduction protection TTL compatible driver Operating frequency up to 150 khz Thermal
BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description
L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition
Description. Table 1. Device summary. Order code Temperature range Package Packaging Marking
14-stage ripple carry binary counter/divider and oscillator Applications Automotive Industrial Computer Consumer Description Datasheet - production data Features Medium speed operation Common reset Fully
STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02
Ultrafast recovery diode Main product characteristics I F(V) 3 V RRM 2 V T j (max) V F (typ) 175 C.7 V K t rr (typ) 16 ns Features and benefits Very low conduction losses Negligible switching losses K
UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION TO-263 TO-25 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast
Features Benefits Description TO-247AC (Modified) Absolute Maximum Ratings Parameter Max Units
Bulletin PD -.338 rev. B /4 HEXFRED TM HFA5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
UA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)
General-purpose single operational amplifier Datasheet - production data N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null 1 2 - Inverting input 3 - Non-inverting
IRGP4068DPbF IRGP4068D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature
STLM20. Ultra-low current 2.4 V precision analog temperature sensor. Features. Applications
Ultra-low current 2.4 V precision analog temperature sensor Features Precision analog voltage output temperature sensor ±1.5 C maximum temperature accuracy at 25 C (±0.5 C typical) Ultra-low quiescent
LM2901. Low-power quad voltage comparator. Features. Description
Low-power quad voltage comparator Features Wide single supply voltage range or dual supplies for all devices: +2 V to +36 V or ±1 V to ±18 V Very low supply current (1.1 ma) independent of supply voltage
n-channel t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V
IRGP463DPbF IRGP463D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low V CE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 C 5 μs
P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323
Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4
40 V, 200 ma NPN switching transistor
Rev. 01 21 July 2009 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description NPN single switching transistor in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V
BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
65 V, 100 ma PNP/PNP general-purpose transistor
Rev. 02 19 February 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
NTMS4920NR2G. Power MOSFET 30 V, 17 A, N Channel, SO 8 Features
NTMS9N Power MOSFET 3 V, 7 A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices
OptiMOS 3 Power-Transistor
Type IPD36N4L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
TSM2N7002K 60V N-Channel MOSFET
SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 5 @ V GS = 10V 100 60 5.5 @ V GS = 5V 100 Features Low On-Resistance ESD Protection High Speed Switching
Y.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
LM135-LM235-LM335. Precision temperature sensors. Features. Description
Precision temperature sensors Features Directly calibrated in K 1 C initial accuracy Operates from 450µA to 5mA Less than 1Ω dynamic impedance TO-92 (Plastic package) Description The LM135, LM235, LM335
IRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET
N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY
TSM020N03PQ56 30V N-Channel MOSFET
PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Parameter Performance Parameter Value Unit V DS 30 V R DS(on) (max) V GS = 10V 2 V GS = 4.5V 3 mω Q
STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
TDA2004R. 10 + 10 W stereo amplifier for car radio. Features. Description
10 + 10 W stereo amplifier for car radio Features Low distortion Low noise Protection against: Output AC short circuit to ground Overrating chip temperature Load dump voltage surge Fortuitous open ground
BD135 - BD136 BD139 - BD140
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
Description SO-8. series. Furthermore, in the 8-pin configuration Very low-dropout voltage (0.2 V typ.)
ery low-dropout voltage regulator with inhibit function TO-92 Bag TO-92 Tape and reel Ammopack 1 2 3 SO-8 Description Datasheet - production data The is a very low-dropout voltage regulator available in
STCS1. 1.5 A max constant current LED driver. Features. Applications. Description
1.5 A max constant current LED driver Features Up to 40 V input voltage Less than 0.5 V voltage overhead Up to 1.5 A output current PWM dimming pin Shutdown pin LED disconnection diagnostic DFN8 (3x3 mm)
VN5R003H-E. 3 mω reverse battery protection switch. Features. Description. Application
3 mω reverse battery protection switch Datasheet production data Features Max supply voltage V CC -16 to 41 V Operating voltage range V CC -16 to 28 V On-state resistance R ON 3mΩ General Optimized electromagnetic
DSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards
-xxxsc5 Secondary protection for DSL lines Features Low capacitance devices: -xxxsc5: Delta C typ = 3.5 pf High surge capability: 30 A - 8/20 µs Voltage: 8 V, 10.5 V, 16 V, and 24 V RoHS package Benefits
45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
Small Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO
SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications
Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
High Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die
High Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES
VN05N. High side smart power solid state relay PENTAWATT. Features. Description
High side smart power solid state relay Features Type V DSS R DS(on) I OUT V CC VN05N 60 V 0.18 Ω 13 A 26 V Output current (continuous): 13A @ Tc=25 C 5V logic level compatible input Thermal shutdown Under
ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
VN03. ISO high side smart power solid state relay PENTAWATT. Features. Description. www.tvsat.com.pl
ISO high side smart power solid state relay Features Type V DSS R DS(on) I n (1) Maximum continuous output current (a) : 4A @ Tc= 25 C 5V logic level compatible input Thermal shutdown Under voltage protection
Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current
Optocoupler, Phototransistor Output, High Reliability, 53 V RMS, Low Input Current FEATURES A C 1 2 4 3 C E Operating temperature from -55 C to +11 C Good CTR linearity depending on forward current Isolation
Power MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
NE555 SA555 - SE555. General-purpose single bipolar timers. Features. Description
NE555 SA555 - SE555 General-purpose single bipolar timers Features Low turn-off time Maximum operating frequency greater than 500 khz Timing from microseconds to hours Operates in both astable and monostable
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
IRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
STCS2A. 2 A max constant current LED driver. Features. Applications. Description
2 A max constant current LED driver Features Up to 40 V input voltage Less than 0.5 V voltage overhead Up to 2 A output current PWM dimming pin Shutdown pin LED disconnection diagnostic Slope control with
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package FEATURES A 4 C Low profile package High collector emitter voltage, V CEO = 8 V 7295-6 DESCRIPTION The has a GaAs infrared
CoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated Product
Chapter 2. Technical Terms and Characteristics
Chapter 2 Technical Terms and Characteristics CONTENTS Page 1 IGBT terms 2-2 2 IGBT characteristics 2-5 This section explains relevant technical terms and characteristics of IGBT modules. 2-1 1 IGBT terms
= 600 V = 56 A = 2.7 V. C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 32 ns V CE(SAT) t fi(typ. Preliminary Data Sheet
HiPerFAST TM IGBT IXGR 4N6C2 ISOPLUS247 TM IXGR 4N6C2D C2-Class High Speed IGBTs (Electrically Isolated Back Surface) S = 6 V 25 = 56 A (SAT) = 2.7 V t fi(typ = 32 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D
Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching