P6SMB Series SMB/DO-214AA. Mechanical Data. Maximum Ratings and Electrical Characteristics. Page <1> 19/05/08 V1.1
|
|
- Gloria Cunningham
- 7 years ago
- Views:
Transcription
1 Features: For surface mounted application in order to optimize board space. Low profile package. Built-in strain relief. Glass passivated junction. Excellent clamping capability. Fast response time: typically less than 1.0ps from 0 volt to BV minimum. Typical I R less than 1µA above 10V. High temperature soldering guaranteed: 260 C/10 seconds at terminals. Plastic material used carries. 600 watts peak pulse power capability with a 10 x 1000µs waveform by 0.01% duty cycle. SMB/DO-214AA Dimensions : Inches (Millimetres) Mechanical Data Case Terminals Polarity Standard packaging Weight : Molded plastic : Pure tin plated lead free. : Indicated by cathode band. : 12mm tape (EIA STD RS-481). : gram. Ratings and Electrical Characteristics Rating at 25 C ambient temperature unless otherwise specified. Page <1> 19/05/08 V1.1
2 Type Number Symbol Value Units Peak Power Dissipation at T A = 25 C, T p = 1ms (Note 1) P PK Minimum 600 Steady State Power Dissipation P D 3 Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) (Note 2, 3) - Unidirectional Only Instantaneous Forward Voltage at 50.0A for Unidirectional Only (Note 4) Watts I FSM 100 Amps V F 3.5/5.0 Volts Typical Thermal Resistance (Note 5) R θjc 10 R θja 55 C/W Operating and Storage Temperature Range T J, T STG -65 to C Notes: 1. Non-repetitive current pulse and derated above T A = 25 C. 2. Mounted on 5.0mm 2 (0.013mm thick) copper pads to each terminal ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum. 4. V F = 3.5V on P6SMB6.8 thru P6SMB91 devices and V F = 5.0V on P6SMB100 thru P6SMB220 devices. 5. Measured on P.C.B. with 0.27 x 0.27 Inch (7.0 x 7.0mm) copper pad areas. Devices for bipolar applications 1. For bidirectional use C or CA suffix for types P6SMB6.8 through types P6SMB220A. 2. Electrical characteristics apply in both directions. Ratings and Characteristic Curves Peak Pulse Power Rating Curve Pulse Derating Curve P PPM, Peak Pulse Power, KW t p, Pulse Width, sec. Peak Pulse Power (P PP ) or Current (I PPM ) Derating In Percentage, % T A Ambient Temperature, C Page <2> 19/05/08 V1.1
3 Clamping Power Pulse Waveform Non-Repetitive Forward Surge Current Unidirectional Only I FSM, Peak Forward Surge Current, Amperes Number of Cycles at 60Hz Typical Junction Capacitance (Unidirectional) C J, Junction Capacitance (pf) Peak Pulse Current - % t, Time, ms V (BR), Breakdown Voltage Volts Page <3> 19/05/08 V1.1
4 Electrical Characteristics (T A = 25 C unless otherwise noted) Device Unidirectional Bidirectional Device Marking Code Breakdown Voltage V BR (Volts) (Note 1) Minimum Test Current at I T (ma) Stand-Off Voltage V WM (Volts) Reverse Leakage at V WM I D (µa) Peak Pulse Current I RSM (Note 2) (Amps) Clamping Voltage at I PPM V C (Volts) Temperature Coefficient of V BR (%/ C) P6SMB100A P6SMB100CA MXJ P6SMB10A P6SMB10CA KPJ P6SMB150A P6SMB150CA NKJ P6SMB18A P6SMB18CA LEJ P6SMB200A P6SMB200CA NTJ P6SMB22A P6SMB22CA LKJ P6SMB27A P6SMB27CA LPJ P6SMB33A P6SMB33CA LTJ P6SMB36A P6SMB36CA LVJ P6SMB39A P6SMB39CA LXJ P6SMB47A P6SMB47CA MEJ P6SMB62A P6SMB62CA MMJ P6SMB68A P6SMB68CA MPJ P6SMB6V8A P6SMB6V8CA KEJ Notes: 1. V BR measured after I T applied for 300µs, I T = square wave pulse or equivalent. 2. Surge current waverform and derate. 3. For bipolar types having V WM of 10 volts and under, the I D limit is doubled. 4. For bidirectional use C or CA suffix for types P6SMB6.8 through P6SMB220A. 5. All terms and symbols are consistent with ANSI/IEEE C Page <4> 19/05/08 V1.1
5 Notes: International Sales Offices: AUSTRALIA Farnell Tel No: Fax No: FINLAND Farnell Tel No: Fax No: ITALY Farnell Tel No: Fax No: SPAIN Farnell Tel No: Fax No: AUSTRIA Farnell Tel No: Fax No: FRANCE Farnell Tel No: Fax No: MALAYSIA Tel No: Fax No: SWEDEN Farnell Tel No: Fax No: BELGIUM Farnell Tel No: Fax No: GERMANY Farnell Tel No: Fax No: NETHERLANDS Farnell Tel No: Fax No: SWITZERLAND Farnell Tel No: Fax No: BRAZIL Tel No: Fax No: HONG KONG Tel No: Fax No: NEW ZEALAND Farnell Tel No: Fax No: UK Farnell Tel No: Fax No: CHINA Tel No: Fax No: HUNGARY - Farnell NORWAY Farnell Tel No: Fax No: UK CPC CZECH REPUBLIC - Farnell INDIA - Farnell PORTUGAL Farnell Tel No: Fax No: USA Newark Tel No: DENMARK Farnell Tel No: Fax No: IRELAND Farnell Tel No: Fax No: RUSSIA Farnell export EXPORT Farnell Tel No: Fax No: For enquiries from all other markets ESTONIA Farnell Tel No: Fax No: ISRAEL Farnell Tel No: Fax No: SINGAPORE Tel No: Fax No: Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. Premier Farnell plc Page <5> 19/05/08 V1.1
Diode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters)
Features: For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Plastic material. Epitaxial
More informationW- Series. Features: WOB. Mechanical Data Case : Moulded plastic. Lead : Solder plated. Weight : 1.10 grams. Page <1> 15/07/08 V1.
Features: Surge overload ratings to 40 amperes peak. Ideal for printed circuit board. Reliable low cost construction. High temperature soldering guaranteed: 260 C/10 seconds/0.375inch (9.5mm) lead lengths
More informationBUX48 High Power Bipolar Transistor
High oltage Switching Features: Collector-Emitter sustaining voltage- CEO(sus) = 400 (Minimum) - BUX48 = 450 (Minimum) -. Collector-Emitter saturation voltage- CE(sat) = 1.5 (Maximum) at I C = 10A for
More informationFeatures: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C
Designed for use in general purpose power amplifier and switching applications. Features: Collector-Emitter Sustaining Voltage V CEO(sus) = 100V (Minimum) - TIP35C, TIP36C DC Current Gain h FE = 25 (Minimum)
More informationTIP31, TIP32 High Power Bipolar Transistor
Features: Collector-Emitter sustaining voltage - V CEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C,. Collector-Emitter saturation voltage - V CE(sat) = 1.2V (Maximum) at I C = 3.0A.
More informationBC107/ BC108/ BC109 Low Power Bipolar Transistors
TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension
More informationFeatures: High reliability. Very sharp reverse characteristic. Zener voltage 3.3V to 12V. V z -tolerance ±5%.
Features: High reliability. Very sharp reverse characteristic. Zener voltage 3.3V to 12V. V z -tolerance ±5%. Applications: Voltage stabilization. Absolute Maximum Ratings Parameter Test Conditions Symbol
More informationFlat Flexible Cable 0.5mm, 1.0mm and 1.25mm Pitch
Flat Flexible Cables consist of flat tin plated copper conductors insulated between Polyester based tapes. Depending on the type of interconnection used, reinforcement tapes can be added to the cable ends
More informationP6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.com FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.8 V to 459 V V BR uni-directional 6.8 V to 540 V V BR bi-directional 6.8 V to 440 V P PPM 600 W P D 5.0 W I FSM (uni-directional
More informationBZW50. Transil, transient voltage surge suppressor (TVS) Features. Description
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 5000 W (10/0 µs) Stand-off voltage range from 10 V to 180 V Unidirectional and bidirectional types
More information1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.
TRANSZORB Transient Voltage Suppressors Case Style.5KE FEATURES Glass passivated chip junction Available in uni-directional and bi-directional 500 W peak pulse power capability with a /0 μs waveform, repetitive
More informationSurface Mount Schottky Barrier
FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD-020 - Compliant to RoHS Directive
More informationSCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
1N5817 and 1N5819 are Preferred Devices... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction
More information1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series. 1500 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.6.8AT3G Series, SZ.6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.
More informationP6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
More information1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
.AT3G Series, SZ.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
More informationDDSL01. Secondary protection for DSL lines. Features. Description
Secondary protection for DSL lines Features Stand off voltage: 30 V Surge capability: I pp = 30 A 8/20 µs Low capacitance device: 4.5 pf at 2 V RoHS package Low leakage current: 0.5 µa at 25 C 3 2 Description
More informationSurface Mount TRANSZORB Transient Voltage Suppressors
Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AA (SMB J-Bend) PRIMARY CHARACTERISTICS V BR (bi-directional) 6.4 V to 231 V V BR (uni-directional) 6.4 V to 231 V V WM 5.0 V to 188 V P PPM
More informationESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323
Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4
More information1SMB59xxBT3G Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBTG Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
More informationAN2703 Application note
Application note list for SCRs, TRIACs, AC switches, and DIACS Introduction All datasheet parameters are rated as minimum or maximum values, corresponding to the product parameter distribution. In each
More information1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
1N58, 1N5821, 1N5822 1N58 and 1N5822 are Preferred Devices Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
More information3EZ6.2D5 Series. 3 Watt DO-41 Surmetic 30 Zener Voltage Regulators
EZ6.D Series Watt DO- Surmetic Zener Voltage Regulators This is a complete series of Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon-oxide
More informationPDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information
Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier
More informationMBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS
Preferred Device... using the Schottky Barrier principle with a platinum barrier metal. These state of the art devices have the following features: Guardring for Stress Protection Low Forward Voltage 150
More informationBSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible
More informationULN2801A, ULN2802A, ULN2803A, ULN2804A
ULN2801A, ULN2802A, ULN2803A, ULN2804A Eight Darlington array Datasheet production data Features Eight Darlington transistors with common emitters Output current to 500 ma Output voltage to 50 V Integral
More informationTable 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO 10605 - C = 330 pf, R = 330 Ω : Contact discharge Air discharge
Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Datasheet - production data Complies with the following standards ISO 10605 - C = 150 pf, R = 330 Ω : 30 kv (air discharge)
More informationETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
More informationSTTH2R06. High efficiency ultrafast diode. Features. Description
STTH2R6 High efficiency ultrafast diode Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description A K The STTH2R6 uses
More informationHigh Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die
More informationDSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards
-xxxsc5 Secondary protection for DSL lines Features Low capacitance devices: -xxxsc5: Delta C typ = 3.5 pf High surge capability: 30 A - 8/20 µs Voltage: 8 V, 10.5 V, 16 V, and 24 V RoHS package Benefits
More informationSTP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED
More informationSTIEC45-xxAS, STIEC45-xxACS
Transil TVS for IEC 61000-4-5 compliance Datasheet - production data differential mode MIL STD 883G, method 3015-7 Class 3B 25 kv HBM (human body model) Resin meets UL 94, V0 MIL-STD-750, method 2026 solderability
More informationMCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS
MCR8B, MCR8M Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls,
More information1N59xxBRNG Series. 3 W DO-41 Surmetic 30 Zener Voltage Regulators
W DO-4 Surmetic 0 Zener Voltage Regulators This is a N9xxBRNG series with limits and excellent operating characteristics that reflect the superior capabilities of silicon oxide passivated junctions. All
More informationSTTH1R04-Y. Automotive ultrafast recovery diode. Features. Description
Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A
More informationSTGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY
More informationHigh-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
More informationSTTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02
Ultrafast recovery diode Main product characteristics I F(V) 3 V RRM 2 V T j (max) V F (typ) 175 C.7 V K t rr (typ) 16 ns Features and benefits Very low conduction losses Negligible switching losses K
More informationBD135 - BD136 BD139 - BD140
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted
More informationBD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
More informationTDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION
TDA2822 DUAL POER AMPLIFIER SUPPLY VOLTAGE DON TO 3 V. LO CROSSOVER DISTORSION LO QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822 is a monolithic integrated circuit in 12+2+2 powerdip,
More informationSTN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
More informationDISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D49 Schottky barrier rectifiers 23 Aug 2 FEATURES Very low forward voltage High surge current Very small plastic SMD package. APPLICATIONS Low voltage
More informationHigh Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES
More informationBTB04-600SL STANDARD 4A TRIAC MAIN FEATURES
BTB-6SL STANDARD A TRIAC MAIN FEATURES A Symbol Value Unit I T(RMS) A V DRM /V RRM 6 V I GT(Q) ma G A A DESCRIPTION The BTB-6SL quadrants TRIAC is intended for general purpose applications where high surge
More informationBTA40, BTA41 and BTB41 Series
BTA4, BTA41 and BTB41 Series STANDARD 4A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 4 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 ma DESCRIPTION Available in high power packages, the BTA/ BTB4-41
More informationHigh Performance Schottky Rectifier, 1.0 A
High Performance Schottky Rectifier, 1. A VS-BQ3-M3 Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1. A V R 3 V V F at I F.42 V I RM max. 15 ma at 125 C T J max. 15 C Diode variation Single die
More informationDual Common-Cathode Ultrafast Plastic Rectifier
(F,B)6AT thru (F,B)6JT Dual Common-Cathode Ultrafast Plastic Rectifier TO-0AB 6xT PIN PIN 3 PIN CASE 3 TO-63AB ITO-0AB F6xT PIN PIN 3 PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time
More informationLM134-LM234-LM334. Three terminal adjustable current sources. Features. Description
Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal
More informationBD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor
Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with
More informationHCF4056B BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION
BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION QUIESCENT CURRENT SPECIF. UP TO 20V OPERATION OF LIQUID CRYSTALS WITH CMOS CIRCUITS PROVIDES ULTRA LOW POWER DISPLAY. EQUIVALENT AC OUTPUT DRIVE
More informationSTW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
More informationSM6T. Transil. Features. Description. Complies with the following standards. Peak pulse power: 600 W (10/1000 µs).
Transil Features Peak pulse power: 600 W (10/1000 µs) 4 kw (8/20 µs) Breakdown voltage range: from 6.8 V to 220 V Unidirectional and bidirectional types Low leakage current: 0.2 µa at 25 C 1 µa at 85 C
More informationSchottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced
More information1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
1SMBAT3G Series, SZ1SMBAT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The SMB series is designed to protect voltage sensitive components from high voltage, high energy
More informationLow forward voltage High breakdown voltage Guard-ring protected Hermetically sealed glass SMD package
Rev. 6 10 September 2010 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C
More informationSTP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V
More information10MQ100N SCHOTTKY RECTIFIER. I F(AV) = 2.1Amp V R = 100V. Bulletin PD-20520 rev. M 07/04. Major Ratings and Characteristics. Description/ Features
0MQ00N SCHOTTKY RECTIFIER 2. Amp I F(AV) = 2.Amp V R = 00V Major Ratings and Characteristics Characteristics 0MQ00N Units I F DC 2. A V RRM 00 V I FSM @ tp = 5 µs sine 20 A V F @.5Apk, T =25 C 0.68 V J
More informationPMEG2020EH; PMEG2020EJ
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
More informationSTP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
More informationSTB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)
More informationSTP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V
More informationSDC15. TVS Diode Array for ESD Protection of 12V Data and Power Lines. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics
Description The SDC15 transient voltage suppressor (TVS) is designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD),
More informationSM712 Series 600W Asymmetrical TVS Diode Array
SM712 Series 6W Asymmetrical TVS Diode Array RoHS Pb GREEN Description The SM712 TVS Diode Array is designed to protect RS-485 applications with asymmetrical working voltages (-7V to from damage due to
More informationSTTH110. High voltage ultrafast rectifier. Description. Features
High voltage ultrafast rectifier Datasheet - production data K Description The STTH110, which is using ST ultrafast high voltage planar technology, is especially suited for free-wheeling, clamping, snubbering,
More informationPMEG3015EH; PMEG3015EJ
Rev. 03 13 January 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for
More informationSchottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES
More informationSchottky Rectifier, 1 A
Schottky Rectifier, 1 A BQPbF FEATURES SMB Cathode Anode Small foot print, surface mountable Low forward voltage drop High frequency operation Available RoHS* COMPLIANT Guard ring for enhanced ruggedness
More information.OPERATING SUPPLY VOLTAGE UP TO 46 V
L298 DUAL FULL-BRIDGE DRIVER.OPERATING SUPPLY VOLTAGE UP TO 46 V TOTAL DC CURRENT UP TO 4 A. LOW SATURATION VOLTAGE OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY)
More informationDATA SHEET. PMEGXX10BEA; PMEGXX10BEV 1 A very low V F MEGA Schottky barrier rectifier DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 24 Apr 2 24 Jun 4 FEATURES Forward current: A Reverse voltages: 2 V, 3 V, 4 V Very low forward voltage Ultra small and very small plastic SMD package
More informationBAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description
SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted
More informationStandard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A
Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A 95PF(R)... DO-203AB (DO-5) PRODUCT SUMMARY I F(AV) Package Circuit configuration 95PF(R)...W DO-203AB (DO-5) 95 A DO-203AB (DO-5) Single
More informationMedium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
More informationSchottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
More informationLC05-6. Dual Low Capacitance TVS Array for Telecom Line-Card Applications. PROTECTION PRODUCTS Description. Features. Mechanical Characteristics
Description The LC5-6 has been specifically designed to protect sensitive components which are connected to highspeed telecommunications lines from over voltages caused by lightning, electrostatic discharge
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationSTP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1
More informationSTW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
More information45 V, 100 ma NPN/PNP general-purpose transistor
Rev. 4 18 February 29 Product data sheet 1. Product profile 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.
More informationVOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS. Qualified to MIL-PRF-19500/420
Available on commercial versions VOIDLESS HERMETICALLY SEALED STANDARD RECOVERY GLASS RECTIFIERS Qualified to MIL-PRF-19500/420 DESCRIPTION This standard recovery rectifier diode series is military qualified
More information1N5817, 1N5818, 1N5819. Axial Lead Rectifiers. SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
1N5817 and 1N5819 are Preferred Devices Axial ead Rectifiers This series employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier
More information1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007. Axial Lead Standard Recovery Rectifiers
1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 Axial ead Standard Recovery Rectifiers This data sheet provides information on subminiature size, axial lead mounted rectifiers for general purpose
More informationAN1826 APPLICATION NOTE TRANSIENT PROTECTION SOLUTIONS: Transil diode versus Varistor
AN1826 APPLICATION NOTE TRANSIENT PROTECTION SOLUTIONS: Transil diode versus A. BREMOND / C. KAROUI Since the seventies, electronic modules are more and more present in our life. This is the case for our
More informationESD9X3.3ST5G Series, SZESD9X3.3ST5G Series. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection
ESD9X3.3ST5G Series, SZESD9X3.3ST5G Series Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The ESD9X Series is designed to protect voltage sensitive components from ESD. Excellent
More informationLC03-6R2G. Low Capacitance Surface Mount TVS for High-Speed Data Interfaces. SO-8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 2 kw PEAK POWER 6 VOLTS
Low Capacitance Surface Mount TVS for High-Speed Data terfaces The LC3- transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD, EFT, and lighting.
More informationAN3353 Application note
Application note IEC 61000-4-2 standard testing Introduction This Application note is addressed to technical engineers and designers to explain how STMicroelectronics protection devices are tested according
More informationMMSZxxxT1G Series, SZMMSZxxxT1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxTG Series, SZMMSZxxxTG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
More informationST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
More informationBAS70 series; 1PS7xSB70 series
BAS70 series; PS7xSB70 series Rev. 09 January 00 Product data sheet. Product profile. General description in small Surface-Mounted Device (SMD) plastic packages. Table. Product overview Type number Package
More information30BQ100PbF SCHOTTKY RECTIFIER. 3 Amp. I F(AV) = 3.0Amp V R = 100V. Bulletin PD-20409 rev. C 01/07. Major Ratings and Characteristics
30BQ00PbF SCHOTTKY RECTIFIER 3 Amp I F(AV) = 3.0Amp V R = 00V Major Ratings and Characteristics Characteristics Values Units I F(AV) Rectangular 3.0 A waveform V RRM 00 V I FSM @ t p = 5 μs sine 800 A
More informationULN2001, ULN2002 ULN2003, ULN2004
ULN2001, ULN2002 ULN2003, ULN2004 Seven Darlington array Datasheet production data Features Seven Darlingtons per package Output current 500 ma per driver (600 ma peak) Output voltage 50 V Integrated suppression
More informationHigh Power Thick Film Chip Resistor 2512
Specifications: Type : MCHP12 Power Rating at 70 C : 2W Working Voltage : 250V Max. Overload Voltage : 500V Max. Dielectric Withstanding Voltage : 500V Temperature Range : -55 C to +155 C Ambient Temperature
More informationCharacteristics Values Units. Rectangular waveform 0.5 A. range - 55 to 150 C
Bulletin I075 rev. C 05/06 IR0530CSPTRPbF 0.5 Amp 30 Volt Features Ultra Low V F To Footprint Area Very Low Profile (
More informationL293B L293E PUSH-PULL FOUR CHANNEL DRIVERS. OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY
L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY. HIGH NOISE IMMUNITY SEPARATE LOGIC SUPPLY OVERTEMPERATURE
More informationTDA2003 10W CAR RADIO AUDIO AMPLIFIER
TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additional features of TDA 2002, very low number of external
More informationCarbon Film Fixed Resistor Axial Leaded
Features Automatically insertable High quality performance Non-Flame type available Cost effective and commonly used Too low or too high values can be supplied on case to case basis Performance Specification
More informationLM135-LM235-LM335. Precision temperature sensors. Features. Description
Precision temperature sensors Features Directly calibrated in K 1 C initial accuracy Operates from 450µA to 5mA Less than 1Ω dynamic impedance TO-92 (Plastic package) Description The LM135, LM235, LM335
More informationL78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description
L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition
More information