SMP50 / SMTPA / TPA TRISIL FOR TELECOM EQUIPMENT PROTECTION
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1 SMP5 / SMTPA / TPA TRISIL FOR TELECOM EQUIPMENT PROTECTION FEATURES Bidirectional crowbar protection Voltage range from 62V to 27V Low capacitance from 12pF to 5V Low leakage current : I R = 2µA max Holding current: I H = 15 ma min Repetitive peak pulse current : I PP = 5 A (1/µs) MAIN APPLICATIONS Telecommunication equipment such as: Analog and digital line cards (xdsl, T1/E1, ISDN,...) Terminals (phone, fax, modem,...) and central office equipment SMA (JEDEC DO-214AC) SMP5 SMB (JEDEC DO-214AA) SMTPA DESCRIPTION These Trisil series have been designed to protect telecommunication equipment against lightning and transient induced by AC power lines. They are available in SMA, SMB and DO-15 packages. BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet various standards such as UL195, IEC95 / CSA C22.2, UL1459 and FCC part 68. Trisils have UL94 V approved resin. SMA and SMB packages are JEDEC registered (DO-214AC and DO-214AA). Trisils are UL497B approved (file: E136224). Table 1: Order Codes Part Number SMP5-xxx TPAxxx SMTPAxxx DO-15 TPA Figure 1: Schematic Diagram Marking See page 9 November 24 REV. 1 1/1
2 Table 2: In compliances with the following standards STANDARD GR-189 Core First level GR-189 Core Second level GR-189 Core Intra-building ITU-T-K2/K21 ITU-T-K2 (IEC6-4-2) VDE433 VDE878 IEC6-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B Peak Surge Voltage (V) 25 Waveform Voltage 2/1 µs 1/ µs Required peak current (A) 5 Current waveform 2/1 µs 1/ µs Minimum serial resistor to meet standard (Ω) 5 2/1 µs 5 2/1 µs /1 µs 2/1 µs /7 µs 1/6 ns 1/7 µs 1.2/5 µs 1/7 µs 1.2/5 µs 1/16 µs 1/56 µs /31 µs ESD contact discharge ESD air discharge /31 µs 1/2 µs 5/31 µs 8/2 µs 1/16 µs 1/56 µs 9/72 µs 25 5/32 µs Table 3: Absolute Ratings (T amb = 25 C) Symbol Parameter Value Unit I PP Repetitive peak pulse current (see figure 2) 1/ µs 8/2 µs 1/56 µs 5/31 µs 1/16 µs 1/2 µs 2/1 µs I FS Fail-safe mode : maximum current (note 1) 8/2 µs 2.5 ka I TSM Non repetitive surge peak on-state current (sinusoidal) t =.2 s t = 1 s t = 2 s t = 15 mn I 2 t I 2 t value for fusing t = 16.6 ms t = 2 ms T stg T j Storage temperature range Maximum junction temperature to T L Maximum lead temperature for soldering during 1 s. 26 C Note 1: in fail safe mode, the device acts as a short circuit A A A 2 s C 2/1
3 Table 4: Thermal Resistances Symbol Parameter Value DO-15 SMA SMB Unit R th(j-a) Junction to ambient (with recommended footprint or with L lead = 1mm for DO-15) 12 C/W R th(j-l) Junction to leads (L lead = 1mm for DO-15) C/W Table 5: Electrical Characteristics (T amb = 25 C) Symbol V RM V BR V BO I RM I PP I BO I H V R Parameter Stand-off voltage Breakdown voltage Breakover voltage Leakage current Peak pulse current Breakover current Holding current Continuous reverse voltage I R C Leakage current at V R Capacitance Types SMP5-62 / TPA62 SMTPA62 SMP5-68 / TPA68 SMTPA68 SMP5- / TPA SMTPA SMP5-12 / TPA12 SMTPA12 SMP5-13 / TPA13 SMTPA13 SMP5-18 / TPA18 SMTPA18 SMP5-2 / TPA2 SMTPA2 SMP5-22 / TPA22 SMTPA22 SMP5-24 / TPA24 SMTPA24 SMP5-27 / TPA27 SMTPA27 Dynamic Static I V RM I V R I V BO V I H C C BO max. max. max. max. max. min. typ. typ. note1 note 2 note 3 note 4 note 5 note 6 µa V µa V V V ma ma pf pf 2 56 Note 1: IR measured at VR guarantee VBR min VR Note 2: see functional test circuit 1 Note 3: see test circuit Note 4: see functional holding current test circuit 3 Note 5: VR = 5V bias, VRMS=1V, F=1MHz Note 6: VR = 2V bias, VRMS=1V, F=1MHz 3/1
4 Figure 2: Pulse waveform (1/µs) Figure 3: Non repetitive surge peak on-state current versus overload duration %I PP Repetitive peak pulse current tr = rise time (µs) tp = pulse duration time (µs) 3 25 I TSM(A) F=5Hz tr tp t 5 t(s) 1E-2 1E-1 1E+ 1E+1 1E+2 1E+3 Figure 4: On-state voltage versus on-state current (typical values) Figure 5: Relative variation of holding current versus junction temperature 5 I (A) T 2. I [T ] / I [T =25 C] H j H j T j=25 C V (V) T T ( C) j Figure 6: Relative variation of breakover voltage versus junction temperature Figure 7: Relative variation of leakage current versus reverse voltage applied (typical values) 1.1 V [T ] / V [T =25 C] BO j BO j 2 I [T ] / I [T =25 C] RM j RM j V R=VRM V V T ( C) j T ( C) j /1
5 Figure 8: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35µm, recommended pad layout) Figure 9: Relative variation of junction capacitance versus reverse voltage applied (typical values) 1E+2 Z th(j-a) ( C/W) C[V R] / C[V R=5V] T j=25 C F=1MHz V RMS=1V 1E+1 SMTPA / TPA 1.5 1E+ SMP t p(s) 1E-1 1E-3 1E-2 1E-1 1E+ 1E+1 1E+2 5E+2. V (V) R Figure 1: Test circuit 1 for Dynamic I BO and V BO parameters V / µs, di/dt < 1 A / µs, Ipp = 5A 2 Ω 45 Ω 83 Ω 46 µh U 1 µf 66 Ω 47 Ω.36 nf KeyTek 'System 2' generator with PN246I module 1 kv / µs, di/dt < 1 A / µs, Ipp = 1 A 26 µh 25 Ω 47 Ω 46 µh U 6 µf 12 Ω KeyTek 'System 2' generator with PN246I module 5/1
6 Figure 11: Test circuit 2 for I BO and V BO parameters K ton = 2ms R1 = 14Ω R2 = 24Ω 22V 5Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE Pulse test duration (tp = 2ms): for Bidirectional devices = Switch K is closed for Unidirectional devices = Switch K is open VOUT selection: Device with V BO < 2V V OUT = 25 V RMS, R1 = 14Ω Device with VBO 2V V OUT = 48 V RMS, R2 = 24Ω Figure 12: Test circuit 3 for dynamic I H parameters R Surge generator V BAT =-48V D.U.T This is a GO-NOGO test which allows to confirm the holding current (I H) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current I PP = 1A, 1/µs. 3/ The D.U.T. will come back off-state within 5ms maximum. 6/1
7 Figure 13: Ordering Information Scheme SMP 5 - xxx Series SMP = Trisil surface mount in SMA SMTP = Trisil surface mount in SMB TP = Trisil in DO-15 Repetitive Peak Pulse Current A or 5 = 5A Voltage 62 = 62V Figure 14: SMA Package Mechanical Data C E1 E L D A1 A2 b DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A A b c E E D L Figure 15: Foot Print Dimensions (in millimeters) /1
8 Figure 16: SMB Package Mechanical Data C E1 E L D A1 A2 b DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A A b c E E D L Figure 17: Foot Print Dimensions (in millimeters) Figure 18: DO-15 Package Mechanical data C A C D B DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A B C D /1
9 Table 6: Ordering Information Part Number Marking Package Weight Base qty Delivery mode SMP5-62 V6 SMP5-68 V7 SMP5- V1 SMP5-12 V12 SMP5-13 V13 SMP5-18 V18 SMA.68 g 5 Tape & reel SMP5-2 V2 SMP5-22 V22 SMP5-24 V24 SMP5-27 V27 SMTPA62 U1 SMTPA68 U5 SMTPA U13 SMTPA12 U17 SMTPA13 U19 SMTPA18 U25 SMB.11 g 25 Tape & reel SMTPA2 U27 SMTPA22 U31 SMTPA24 U35 SMTPA27 U39 TPA62 Ammopack TPA62 TPA62RL 6 Tape & reel TPA68 Ammopack TPA68 TPA68RL 6 Tape & reel TPA Ammopack TPA TPARL 6 Tape & reel TPA12 TPA12 Ammopack TPA13 Ammopack TPA13 TPA13RL 6 Tape & reel TPA18 DO-15.4 g Ammopack TPA18 TPA18RL 6 Tape & reel TPA2 Ammopack TPA2 TPA2RL 6 Tape & reel TPA22 Ammopack TPA22 TPA22RL 6 Tape & reel TPA24 Ammopack TPA24 TPA24RL 6 Tape & reel TPA27 Ammopack TPA27 TPA27RL 6 Tape & reel Table 7: Revision History Date Revision Description of Changes 16-Nov-24 1 SMP5, SMTPA and TPA datasheets merge. 9/1
10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 24 STMicroelectronics - All rights reserved STMicroelectronics group of compagnies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 1/1
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