SMP75-8 TRISIL FOR TELECOM EQUIPMENT PROTECTION

Transcription

1 SMP75-8 TRISIL FOR TELECOM EQUIPMENT PROTECTION FEATURES Bidirectional crowbar protection Voltage: 8V Low leakage current : I R = 2µA max Holding current: I H = 15 ma min Repetitive peak pulse current : I PP = 75 A (1/1µs) MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes and power crossing: Ethernet, T1/E1 SMB (JEDEC DO-214AA) DESCRIPTION The SMP75-8 is a very low voltage transient surge arrestor especially designed to protect sensitive telecommunication equipment against lightning strikes and other transients. Its low voltage makes it suitable to protect low voltage transformer in T1/ E1, ethernet links without saturation of the transformer. BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL195, IEC95 / CSA C22.2 and UL1459. They have UL94 V approved resin. SMB package is JEDEC registered (DO-214AA). Trisils comply with the following standards GR- 189 Core, ITU-T-K2/K21, VDE433, VDE878, IEC and FCC part 68. Table 1: Order Code Part Number SMP75-8 Figure 1: Schematic Diagram Marking L8 TM: TRISIL is a trademark of STMicroelectronics. January 26 REV. 4 1/8

2 Table 2: In compliances with the following standards STANDARD GR-189 Core First level GR-189 Core Second level GR-189 Core Intra-building ITU-T-K2/K21 ITU-T-K2 (IEC61-4-2) VDE433 VDE878 IEC FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B Peak Surge Voltage (V) 25 1 Waveform Voltage 2/1 µs 1/1 µs Required peak current (A) 5 1 Current waveform 2/1 µs 1/1 µs Minimum serial resistor to meet standard (Ω) 5 2/1 µs 5 2/1 µs /1 µs 1 2/1 µs /7 µs 1/6 ns 1/7 µs 1.2/5 µs 1/7 µs 1.2/5 µs 1/16 µs 1/56 µs /31 µs ESD contact discharge ESD air discharge /31 µs 1/2 µs 5/31 µs 8/2 µs 1/16 µs 1/56 µs 1 9/72 µs 25 5/32 µs Table 3: Absolute Ratings (T amb = 25 C) Symbol Parameter Value Unit I PP Repetitive peak pulse current 1/1 µs 8/2 µs 1/56 µs 5/31 µs 1/16 µs 1/2 µs 2/1 µs I FS Fail-safe mode : maximum current (note 1) 8/2 µs 5 ka I TSM I 2 t T stg T j Non repetitive surge peak on-state current (sinusoidal) I 2 t value for fusing Storage temperature range Maximum junction temperature t =.2 s t = 1 s t = 2 s t = 15 mn t = 16.6 ms t = 2 ms A A A 2 s -55 to T L Maximum lead temperature for soldering during 1 s. 26 C Note 1: in fail safe mode, the device acts as a short circuit C 2/8

3 Table 4: Thermal Resistances Symbol Parameter Value Unit R th(j-a) Junction to ambient (with recommended footprint) 1 C/W R th(j-l) Junction to leads 2 C/W Table 5: Electrical Characteristics (T amb = 25 C) Symbol Parameter V RM V BR V BO I RM I PP I BO I H V R Stand-off voltage Breakdown voltage Breakover voltage Leakage current Peak pulse current Breakover current Holding current Continuous reverse voltage I R C Leakage current at V R Capacitance I V RM I V R Dynamic V BO Static V I BO I H C Types max. max. max. max. typ. max. max. note1 note 2 note 3 note 4 note 5 µa V µa V V V ma ma pf SMP Note 1: IR measured at VR guarantee VBR min VR Note 2: see functional test circuit 1 Note 3: see test circuit 2 Note 4: see functional holding current test circuit 3 Note 5: VR = 2V bias, VRMS=1V, F=1MHz Figure 2: Pulse waveform Figure 3: Non repetitive surge peak on-state current versus overload duration I TSM(A) 1 %I PP Repetitive peak pulse current tr = rise time (µs) tp = pulse duration time (µs) F=5Hz Tj initial = 25 C tr tp t 1 5 t(s) 1E-2 1E-1 1E+ 1E+1 1E+2 1E+3 3/8

4 Figure 4: On-state voltage versus on-state current (typical values) Figure 5: Relative variation of holding current versus junction temperature 1 I T(A) 2. I H[Tj] / I H[Tj=25 C] Tj=25 C V (V) T Tj( C) Figure 6: Relative variation of breakover voltage versus junction temperature V BO[Tj] / V BO[Tj=25 C] Tj( C) Figure 8: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35µm, recommended pad layout) Z th(j-a) /Rth(j-a) tp(s) 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Figure 7: Relative variation of leakage current versus reverse voltage applied (typical values) I R[Tj] / I R[Tj=25 C] Tj( C) Figure 9: Relative variation of junction capacitance versus reverse voltage applied (typical values) C [V R] / C [V R=2V] V (V) R F =1MHz V OSC = 1VRMS Tj = 25 C 1 1 4/8

5 Figure 1: Test circuit 1 for dynamic I BO and V BO parameters 1 V / µs, di/dt < 1 A / µs, Ipp = 75A 2 Ω 45 Ω 83 Ω 46 µh U 1 µf 66 Ω 47 Ω.36 nf KeyTek 'System 2' generator with PN246I module 1 kv / µs, di/dt < 1 A / µs, Ipp = 1 A 26 µh 25 Ω 47 Ω 46 µh U 6 µf 12 Ω KeyTek 'System 2' generator with PN246I module Figure 11: Test circuit 2 for I BO and V BO parameters K ton = 2ms R1 = 14Ω R2 = 24Ω 22V 5Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE Pulse test duration (tp = 2ms): for Bidirectional devices = Switch K is closed for Unidirectional devices = Switch K is open VOUT selection: Device with V BO < 2V V OUT = 25 V RMS, R1 = 14Ω Device with VBO 2V V OUT = 48 V RMS, R2 = 24Ω 5/8

6 Figure 12: Test circuit 3 for dynamic I H parameter R Surge generator V BAT =-48V D.U.T This is a GO-NOGO test which allows to confirm the holding current (I H) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current I PP = 1A, 1/1µs. 3/ The D.U.T. will come back off-state within 5ms maximum. Figure 12: Ordering Information Scheme SMP 75-8 Trisil Surface Mount Repetitive Peak Pulse Current 75 = 75A Voltage 8 = 8V 6/8

7 Figure 13: SMB Package Mechanical data C E1 E L D A1 A2 b DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A A b c E E D L Figure 14: Foot Print Dimensions (in millimeters) In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: Table 6: Ordering Information Part Number Marking Package Weight Base qty Delivery mode SMP75-8 L8 SMB.11 g 25 Tape & reel Table 7: Revision History Date Revision Description of Changes 19-July-25 3 Previous issue 2-Jan-26 4 Added ECOPACK statement and changed page layout. Minor updates to technical values in Tables 2, 3, and 5. 7/8

8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 26 STMicroelectronics - All rights reserved STMicroelectronics group of compagnies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8