Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Save this PDF as:
 WORD  PNG  TXT  JPG

Size: px
Start display at page:

Download "Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED"

Transcription

1 Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

2 THIS PAGE INTENTIONALLY LEFT BLANK

3 HMC311SC7 / 311SC7E v.1 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311SC7(E) is ideal for: Cellular / PCS / 3G WiBro / WiMAX / G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio & Test Equipment Functional Diagram Features P1dB Output Power: +15 Output IP3: +3 Gain: 15 db Cascadable, 5 Ohm I/O s Single Supply: +5V Industry Standard SC7 Package General Description Electrical Specifications, Vs= 5V, Rbias= 22 Ohm, T A = +25 C Gain Gain Variation Over Temperature The HMC311SC7(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to GHz amplifier. Packaged in an industry standard SC7, the amplifier can be used as either a cascadable 5 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 output power. The HMC311SC7(E) offers 15 db of gain and an output IP3 of +3 while requiring only 5 ma from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Parameter Min. Typ. Max. Units DC - 1. GHz GHz. -. GHz. -. GHz DC - 1. GHz GHz. -. GHz. -. GHz Return Loss Input / Output DC -. GHz 15 db Reverse Isolation DC -. GHz 1 db Output Power for 1 db Compression (P1dB) Output Third Order Intercept (IP3) DC - 2. GHz GHz. -. GHz. -. GHz DC - 2. GHz GHz. -. GHz Noise Figure DC -. GHz 5 db Supply Current (Icq) 55 7 ma Note: Data taken with broadband bias tee on device output db db db db db/ C db/ C db/ C 1 For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 12 Phone: Fax: Order On-line at Application Support: Phone: or

4 HMC311SC7 / 311SC7E v.1 MMIC AMPLIFIER, DC - GHz Broadband Gain & Return Loss 2 Gain vs. Temperature 2 RESPONSE (db) S21 S11 S Input Return Loss vs. Temperature RETURN LOSS (db) C Reverse Isolation vs. Temperature GAIN (db) Output Return Loss vs. Temperature RETURN LOSS (db) C C Noise Figure vs. Temperature REVERSE ISOLATION (db) C NOISE FIGURE (db) C For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 12 Phone: Fax: Order On-line at Application Support: Phone: or 2

5 HMC311SC7 / 311SC7E v.1 MMIC AMPLIFIER, DC - GHz P1dB vs. Temperature 1 Psat vs. Temperature 1 P1dB () C Power 1 GHz Pout (), GAIN (db), PAE (%) INPUT POWER () Output IP3 vs. Temperature Pout Gain PAE Psat () C Power GHz Pout (), GAIN (db), PAE (%) Pout Gain PAE INPUT POWER () Gain, Power, IP3 & Supply Current vs. Supply 1 GHz IP3 () C GAIN (db), P1dB (), Psat (), IP3 () Icq Gain P1dB Psat IP Icq (ma) Vs (Vdc) 3 For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 12 Phone: Fax: Order On-line at Application Support: Phone: or

6 HMC311SC7 / 311SC7E v.1 MMIC AMPLIFIER, DC - GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) +7V RF Input Power (RFIN)(Vcc = +3.9V) Outline Drawing +1 Junction Temperature 15 C Continuous Pdiss (T = 5 C) (derate 5.21 mw/ C above 5 C) Thermal Resistance (junction to lead).3 W 191 C/W Storage Temperature -5 to +15 C Operating Temperature - to +5 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD MATERIAL: COPPER ALLOY 3. LEAD PLATING: Sn/Pb. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.15mm PER SIDE.. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking HMC311SC7 Low Stress Injection Molded Plastic Sn/Pb MSL1 [1] 311E HMC311SC7E RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 [2] 311E [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 2 C For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 12 Phone: Fax: Order On-line at Application Support: Phone: or

7 HMC311SC7 / 311SC7E v.1 MMIC AMPLIFIER, DC - GHz Pin Descriptions Pin Number Function Description Interface Schematic 1, 2,, 5 GND These pins must be connected to RF/DC ground. 3 RFIN Application Circuit This pin is DC coupled. An off chip DC blocking capacitor is required. RFOUT RF output and DC Bias for the output stage. Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3. Rbias Recommended Component Values Component Frequency (MHz) L1 27 nh 5 nh 22 nh 22 nh 15 nh.2 nh 3.3 nh 3.3 nh C1, C2.1 µf 1 pf 1 pf 1 pf 1 pf 1 pf 1 pf 1 pf 5 For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 12 Phone: Fax: Order On-line at Application Support: Phone: or

8 HMC311SC7 / 311SC7E v.1 MMIC AMPLIFIER, DC - GHz Evaluation PCB List of Materials for Evaluation PCB 11 [1] Item J1 - J2 J3 - J C1 - C3 C C5 R1 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 1 pf Capacitor, 2 Pkg. 1 pf Capacitor, 3 Pkg. 2.2 µf Capacitor, Tantalum 22 Ohm Resistor, 1 Pkg. 22 nh Inductor, 3 Pkg. HMC311SC7 / HMC311SC7E 1173 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 35 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Analog Devices, Inc., 2 Elizabeth Drive, Chelmsford, MA 12 Phone: Fax: Order On-line at Application Support: Phone: or

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v6.129 Typical Applications The HMC327MS8G(E)

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v2.71 HMC42ST8 / 42ST8E AMPLIFIER,.4-2.2

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC93LP3E v.214 GaAs phemt MMIC LOW

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.514 AMPLIFIER, 5 - GHz Typical

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v2.61 Typical Applications This is

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.51 HMC519LC AMPLIFIER, 1-31 GHz

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC3653* Product Page Quick Links Last Content Update: 8/3/216 Comparable

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications The is ideal

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v04.011 Typical Applications Low

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.4 HMC561LP3 / 561LP3E Typical

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.41 Typical Applications The HMC642ALC

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications The HMC547LP3

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC849A* Product Page Quick Links Last Content Update: 08/30/2016 Comparable

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications The HMC347LP3

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.1211 Typical Applications The

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC727* Product Page Quick Links Last Content Update: 08/30/2016 Comparable

More information

Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz 14.8 16.3 17.8

Symbol Parameters Units Frequency Min. Typ. Max. 850 MHz 14.8 16.3 17.8 Product Description Sirenza Microdevices SGC-689Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides

More information

NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED OBSOLETE

NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED OBSOLETE Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v03.1203 Typical Applications Broadband

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX High Gain, High IP3 Monolithic Amplifier 50Ω 0.01 to 6 GHz The Big Deal High Gain Broadband High Dynamic Range without external Matching Components May be used as a replacement to RFMD SBB5089Z a,b SOT-89

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK 1 Typical Applications This is ideal

More information

NBB-402. RoHS Compliant & Pb-Free Product. Typical Applications

NBB-402. RoHS Compliant & Pb-Free Product. Typical Applications Typical Applications Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers 0 RoHS Compliant & Pb-Free Product NBB-402 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO

More information

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX

Broadband covering primary wireless communications bands: Cellular, PCS, LTE, WiMAX Ultra Linear Low Noise Monolithic Amplifier 50Ω The Big Deal 0.05 to 4 GHz Ultra High IP3 Broadband High Dynamic Range without external Matching Components May be used as a replacement for RFMD SPF-5189Z

More information

Typical Performance 1. IS-95C ACPR 21.0 - - - dbm WCDMA ACLR - 19.5 18.5 - dbm

Typical Performance 1. IS-95C ACPR 21.0 - - - dbm WCDMA ACLR - 19.5 18.5 - dbm Device Features OIP3 = 45.0 dbm @ 1900 MHz Gain = 15.0 db @ 1900 MHz Output P1 db = 27.5 dbm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protection Circuit Lead-free/RoHS-compliant SOT-89 SMT package

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC875* Product Page Quick Links Last Content Update: 09/02/2016 Comparable

More information

50-900 MHz High Dynamic Range Amplifier

50-900 MHz High Dynamic Range Amplifier Features 50 to 900 MHz Frequency Range +41 dbm Output IP3-71 dbc CTB -48 dbc CSO 1.6 db Noise Figure (@ 450 MHz) 17 db Gain 22 dbm P1dB RoHS Compliant SOT-89 SMT Package Single Power Supply +3V to +5V

More information

GaAs, phemt, MMIC, 0.25 W Power Amplifier, DC to 40 GHz HMC930A

GaAs, phemt, MMIC, 0.25 W Power Amplifier, DC to 40 GHz HMC930A Data Sheet GaAs, phemt, MMIC,.25 W Power Amplifier, DC to 4 GHz HMC9A FEATURES High output power for 1 db compression (P1dB): 22 dbm High saturated output power (PSAT): dbm High gain: 13 db High output

More information

Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier

Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is internally input and output matched. It

More information

Low Profile, Low Cost, Fully Integrated Monolithic Microwave Amplifiers

Low Profile, Low Cost, Fully Integrated Monolithic Microwave Amplifiers (AN-60-016) Low Profile, Low Cost, Fully Integrated Monolithic Microwave Amplifiers Engineering Department Mini-Circuits, Brooklyn, NY 11235 Introduction Monolithic microwave amplifiers are widely used

More information

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT

Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT Basestation Applications Cellular and PCS Systems CDMA, W-CDMA Systems GSM/EDGE Systems Final PA for Low-Power Applications RF3223Low Noise, Linear Amplifier High Linearity/Driver Amplifier RF3223 LOW

More information

DATA SHEET. SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS. Part Number Order Number Package Marking Supplying Form

DATA SHEET. SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS. Part Number Order Number Package Marking Supplying Form DESCRIPTION The μpc8tk is a silicon germanium (SiGe) monolithic integrated circuit designed as a low noise amplifier for GPS and mobile communications. The package is -pin lead-less minimold, suitable

More information

MASW-007070-0001TB. GaAs SPST Switch, Absorptive, Single Supply, DC-4.0 GHz. Features. Pin Configuration 1,2,3,4. Description. Ordering Information

MASW-007070-0001TB. GaAs SPST Switch, Absorptive, Single Supply, DC-4.0 GHz. Features. Pin Configuration 1,2,3,4. Description. Ordering Information Features Operates DC - 4 GHz on Single Supply ASIC TTL / CMOS Driver Low DC Power Consumption 50 Ohm Nominal Impedance Test Boards are Available Tape and Reel are Available Lead-Free 4 x 6 mm PQFN Package

More information

Amplifier Configuration

Amplifier Configuration CGR-Z Push-Pull MHz to MHz High Linearity InGaP HBT Amplifier CGR-Z PUSH-PULL MHz to MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC- Product Description RFMD s CGR-Z is a high performance InGaP HBT

More information

Monolithic Amplifier PMA2-43LN+ Ultra Low Noise, High IP3. 50Ω 1.1 to 4.0 GHz. The Big Deal

Monolithic Amplifier PMA2-43LN+ Ultra Low Noise, High IP3. 50Ω 1.1 to 4.0 GHz. The Big Deal Ultra Low Noise, High IP3 Monolithic Amplifier 50Ω 1.1 to 4.0 GHz The Big Deal Ultra low noise figure, 0.46 db High gain, high IP3 Small size, 2 x 2 x 1mm 2mm x 2mm Product Overview Mini-Circuits is an

More information

Ku Band 6.5 W Power Amplifier

Ku Band 6.5 W Power Amplifier Ku Band 6.5 W Power Amplifier Key Features Frequency Range: 13-18 GHz 38.5 dbm Nominal Psat from 13.75-14 GHz 38 dbm Nominal Psat from 13-16 GHz 37.5 dbm Nominal Psat from 16-18 GHz 33 dbc IMD3 @ 27 dbm

More information

23-26GHz Reflective SP4T Switch. GaAs Monolithic Microwave IC in SMD leadless package

23-26GHz Reflective SP4T Switch. GaAs Monolithic Microwave IC in SMD leadless package CHS2411-QDG Description GaAs Monolithic Microwave IC in SMD leadless package The CHS2411-QDG (CHS2412-QDG, see Note) is a monolithic reflective SP4T switch in K-Band. Positive supply voltage only is required.

More information

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier

Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The is a general purpose amplifier that is input and output internally

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC976* Product Page Quick Links Last Content Update: 08/30/2016 Comparable

More information

DC-to-Microwave, Low-Noise Amplifier

DC-to-Microwave, Low-Noise Amplifier 19-9; Rev 2; /0 EVALUATION KIT AVAILABLE DC-to-Microwave, Low-Noise Amplifier General Description The is a low-voltage, low-noise amplifier for use from DC to microwave frequencies. Operating from a single

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc8tk SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The μpc8tk is a silicon germanium carbon (SiGe:C) monolithic integrated circuit

More information

Features. C2 (pf)

Features. C2 (pf) MICRF3 MHz to MHz, 1.8 to 3.6V, Low-Noise Amplifier with Shutdown General Description The MICRF3 is a low-noise amplifier (LNA) with lowpower shutdown mode, which operates over the MHz to MHz frequency

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.113 Frequency Divider Operation

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) Low Noise Amplifier The MML09211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for

More information

RFHA1000TR13. Features. Applications. Ordering Information. Package: AIN Leadless Chip Carrier, SO8

RFHA1000TR13. Features. Applications. Ordering Information. Package: AIN Leadless Chip Carrier, SO8 15W GaN Wide-Band Power Amplifier RFHA1000 The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose

More information

Enhancement Mode phemt

Enhancement Mode phemt Freescale Semiconductor Technical Data Enhancement Mode phemt Technology (E -phemt) Low Noise Amplifier The MML09212H is a 2--stage low noise amplifier (LNA) with active bias and high isolation for use

More information

NBB-300 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz

NBB-300 Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz Cascadable Broadband GaAs MMIC Amplifier DC to 12GHz NBB-300 The NBB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification

More information

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20 AMT-A0012 500 MHz to 1400 MHz Ultra Flat Gain with High Linearity Amplifier Data Sheet Features Ultra Flat Gain < ± 0.1 db from 500 to 1400MHz Frequency Range Gain 28 db High Linearity, OIP3 > +34 dbm

More information

=25 C, Frequency 0.45 to 6 GHz. Symbol Parameter Condition Min. Typ. Max. Units. =15 ma V V TH. =0 V µa.

=25 C, Frequency 0.45 to 6 GHz. Symbol Parameter Condition Min. Typ. Max. Units. =15 ma V V TH. =0 V µa. Ultra Low Noise, Medium Current E-PHEMT Product Features Low Noise Figure, 0.5 db Gain, 16 db at 2 GHz High Output IP3, + dbm Output Power at 1dB comp., +18 dbm Low Current, ma Wide bandwidth External

More information

Amplifier Configuration. Supply Voltage 12 V See power supply note on page 7 Operating Current 130 ma

Amplifier Configuration. Supply Voltage 12 V See power supply note on page 7 Operating Current 130 ma CGR-118Z Dual CATV 5MHz to 65MHz CATV Amp IC CGR-118Z DUAL CATV 5MHz to 65MHz CATV AMP IC Package: SOIC 8 Product Description RFMD s CGR-118Z is a high performance 75 push-pull InGaP HBT MMIC amplifier

More information

Low Noise Bypass Amplifier

Low Noise Bypass Amplifier Wideband Low Noise Bypass Amplifier 50Ω 0.5 to 5 GHz The Big Deal Very wideband, 500 MHz 5 GHz Ultra-flat gain, ±0.7 from 700 to 2100 MHz Low NF over entire frequency band, 1.4 Internal bypass switching

More information

RF V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH

RF V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Package: LGA, 32-pin, 8mm x 8mm x 1.2mm Features Integrated LNA, PA and Transfer Switch Small From Factor 8.0mm x 8.0mm x 1.2mm 50Ω Inputs and Outputs Low Insertion Loss, High Isolation Transfer Switch

More information

MAAD Digital Attenuator, 6-Bit, Serial / Parallel Control 31.5 db, GHz Rev. V2. Functional Schematic 3,4. Features.

MAAD Digital Attenuator, 6-Bit, Serial / Parallel Control 31.5 db, GHz Rev. V2. Functional Schematic 3,4. Features. Features Integrated CMOS/TTL Compatible Driver Parallel & Serial (P/S) Control with power-up state selection Insertion Loss: 1.6 db typical @ 2.1 GHz IP3: 5 dbm typical @ 2 GHz Attenuation Accuracy: +/-(.4

More information

BIASING MMIC AMPLIFIERS (e.g., ERA SERIES) (AN )

BIASING MMIC AMPLIFIERS (e.g., ERA SERIES) (AN ) Introduction BIASING MMIC AMPLIFIERS (e.g., ERA SERIES) (AN-60-010) The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance

More information

TQP0103 15 W, DC to 4 GHz, GaN Power Transistor

TQP0103 15 W, DC to 4 GHz, GaN Power Transistor Applications W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Active Antenna General Purpose Applications 20 Pin 3x4mm QFN Product Features Functional Block Diagram Operating

More information

EVALUATION KIT AVAILABLE Broadband, Two-Output, Low-Noise Amplifier for TV Tuner Applications MAX2130. Maxim Integrated Products 1

EVALUATION KIT AVAILABLE Broadband, Two-Output, Low-Noise Amplifier for TV Tuner Applications MAX2130. Maxim Integrated Products 1 9-86; Rev ; 8/ EVALUATION KIT AVAILABLE Broadband, Two-Output, Low-Noise General Description The broadband, low-distortion, low-noise, two-output amplifier performs preamp, loop-out, and buffer functions

More information

General Description. Features. Ordering Information. Applications. Typical Application Circuit

General Description. Features. Ordering Information. Applications. Typical Application Circuit EVALUATION KIT AVAILABLE / General Description The / low-noise amplifiers (LNAs) are designed for GPS L1, Galileo, and GLONASS applications. Designed in Maxim s advanced SiGe process, the devices achieve

More information

BIASING OF CONSTANT CURRENT MMIC AMPLIFIERS (e.g., ERA SERIES) (AN-60-010)

BIASING OF CONSTANT CURRENT MMIC AMPLIFIERS (e.g., ERA SERIES) (AN-60-010) BIASING OF CONSTANT CURRENT MMIC AMPLIFIERS (e.g., ERA SERIES) (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer

More information

TGA2227-SM 2 22 GHz GaN Low Noise Amplifier

TGA2227-SM 2 22 GHz GaN Low Noise Amplifier Product Description The TGA7 SM is a packaged, low noise amplifier offering high electrical performance, along with exceptional robustness to incident power. Fabricated on Qorvo s.1 um GaN on SiC production

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK , 10 MHz to 20 GHz 2 Elizabeth Drive,

More information

General Description. Features. Applications. Ordering Information. Pin Configuration/Typical Application Circuit

General Description. Features. Applications. Ordering Information. Pin Configuration/Typical Application Circuit EVALUATION KIT AVAILABLE MAX2657/MAX2658 General Description The MAX2657/MAX2658 high-gain, low-noise amplifiers (LNAs) are designed for GPS L1, Galileo, and GLONASS applications. Designed in Maxim's advanced

More information

SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode

SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode DATA SHEET SMS7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode Applications Sensitive RF and microwave detector circuits Sampling and mixer circuits High volume wireless systems

More information

CMPA801B W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Applications. Features

CMPA801B W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Applications. Features CMPA801B025 25 W, 8.5-11.0 GHz, GaN MMIC, Power Amplifier Cree s CMPA801B025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN

More information

Features. General Description. Applications. Ordering Information. Functional Diagram

Features. General Description. Applications. Ordering Information. Functional Diagram EVALUATION KIT AVAILABLE MAX66/MAX665 General Description The MAX66 and MAX665 are ultra-compact LNAs for VHF/UHF applications. These devices incorporate a broadband LNA with an integrated bypass switch.

More information

MADR-009190-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. 4. Functional Schematic. Features.

MADR-009190-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. 4. Functional Schematic. Features. Features High Voltage CMOS Technology Four Channel Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost Lead-Free SOIC-16 Plastic Package Halogen-Free Green Mold Compound

More information

13.5-40.5GHz Frequency Multiplier. GaAs Monolithic Microwave IC. Output power (dbm) -10 -15 -20 -25 -30

13.5-40.5GHz Frequency Multiplier. GaAs Monolithic Microwave IC. Output power (dbm) -10 -15 -20 -25 -30 Output power (dbm) GaAs Monolithic Microwave IC Description The is a packaged monolithic time three multiplier which integrates input and output buffer. This circuit is a very versatile multiplier for

More information

Ultra Low Noise Amplifiers By Stephen Moreschi and Jody Skeen, Skyworks Solutions, Inc.

Ultra Low Noise Amplifiers By Stephen Moreschi and Jody Skeen, Skyworks Solutions, Inc. Ultra Low Noise Amplifiers By Stephen Moreschi and Jody Skeen, Skyworks Solutions, Inc. May 2014 Keeping in mind the increasing demand for higher sensitivity, broader band low noise amplifiers (LNA) in

More information

This amplifier module is ideal for driver and final output stages in analog and digital TV broadcast equipment.

This amplifier module is ideal for driver and final output stages in analog and digital TV broadcast equipment. Model: UHFTV-3950MH TV Amplifier Module This amplifier module is ideal for driver and final output stages in analog and digital TV broadcast equipment. 470 860MHz 50Volts Class AB Pout: 100W Peak Sync

More information

MAAV PIN Diode Based Variable Attenuator, MHz. Features. Functional Schematic. Description. Pin Configuration. Ordering Information

MAAV PIN Diode Based Variable Attenuator, MHz. Features. Functional Schematic. Description. Pin Configuration. Ordering Information Features High Dynamic Range: 42dB Typical Flat Attenuation vs. Frequency High P1dB Compression Operates on a Single +5V Supply: 50 Ohm Nominal Impedance Lead-Free SOW-16 Package 100% Matte Tin Plating

More information

CHA1077a RoHS COMPLIANT

CHA1077a RoHS COMPLIANT RoHS COMPLIANT W-band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1077a is a W-band monolithic 3- stages low noise amplifier. All the active devices are internally self-biased.

More information

BIPOLAR ANALOG INTEGRATED CIRCUIT

BIPOLAR ANALOG INTEGRATED CIRCUIT DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc823tu SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μpc823tu is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise

More information

SiGe:C Low Noise High Linearity Amplifier

SiGe:C Low Noise High Linearity Amplifier Rev. 2 21 February 2012 Product data sheet 1. Product profile 1.1 General description The is a low noise high linearity amplifier for wireless infrastructure applications. The LNA has a high input and

More information

SLNA SMA DATA SHEET

SLNA SMA DATA SHEET 1.4 db NF Low Noise Amplifier Operating From 10 MHz to 3 GHz with 34 db Gain, 11 dbm P1dB and SMA SLNA-030-34-14-SMA SLNA-030-34-14-SMA is a wideband low noise RF coaxial power amplifier operating in the

More information

Surface Mount PIN Diode SP2T Switches MSW2030-203, MSW2031-203 & MSW2032-203 Series Datasheet

Surface Mount PIN Diode SP2T Switches MSW2030-203, MSW2031-203 & MSW2032-203 Series Datasheet Surface Mount PIN Diode SP2T Switches MSW2030-203, MSW2031-203 & MSW2032-203 Series Datasheet Features Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H Higher Average Power Handling

More information

MAAD-007084-0001TB. Digital Attenuator 15.5 db, 5-Bit, TTL Driver, DC-2.0 GHz Rev. V2. Features. Schematic with Off-Chip Components.

MAAD-007084-0001TB. Digital Attenuator 15.5 db, 5-Bit, TTL Driver, DC-2.0 GHz Rev. V2. Features. Schematic with Off-Chip Components. MAAD-007084-00000 5.5, 5-Bit, TTL Driver, DC-2.0 GHz Rev. 2 Features Attenuation: 0.5 Steps to 5.5 Low DC Power Consumption Integral TTL Driver 50 ohm Impedance Test Boards are Available Tape and Reel

More information

5W X-Band GaN Power Amplifier Using a Commercially Available Discrete Plastic Packaged SMT Transistor

5W X-Band GaN Power Amplifier Using a Commercially Available Discrete Plastic Packaged SMT Transistor Sheet Code RFi0612 White Paper 5W X-Band GaN Power Amplifier Using a Commercially Available Discrete Plastic Packaged SMT Transistor This paper describes the design of a single stage 5W X-Band GaN Power

More information

MADR-009443-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators. Functional Schematic. Features. Description. Pin Configuration 2

MADR-009443-0001TR. Quad Driver for GaAs FET or PIN Diode Switches and Attenuators. Functional Schematic. Features. Description. Pin Configuration 2 Features Functional Schematic High Voltage CMOS Technology Four Channel Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost 4x4 mm, 20-lead PQFN Package 100% Matte

More information

DC to 30GHz Broadband MMIC Low-Power Amplifier

DC to 30GHz Broadband MMIC Low-Power Amplifier DC to 30GHz Broadband MMIC Low-Power Amplifier Features Integrated LFX technology: Simplified low-cost assembly Drain bias inductor not required Broadband 45GHz performance: Good gain (10 ± 1.25dB) 14.5dBm

More information

MADP-000504-10720T. Non Magnetic MELF PIN Diode

MADP-000504-10720T. Non Magnetic MELF PIN Diode MADP-54-172T Features High Power Handling Low Loss / Low Distortion Leadless Low Inductance MELF Package Non-Magnetic Surface Mountable RoHS Compliant MSL 1 Package Style 172 Dot Denotes Cathode Description

More information

TGA2533-SM Ku-Band Power Amplifier

TGA2533-SM Ku-Band Power Amplifier Applications Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 12.5 15.5 GHz TOI: 43dBm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: db Return Loss:

More information

Keysight 1GC DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier

Keysight 1GC DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier Keysight 1GC1-4262 DC - 4 GHz, High-Gain, Dual-Mode: Low-Noise/Medium-Power HBT Amplifier Data Sheet Features Dual operating modes 1 : Low-noise mode: NF = 3 db P 1dB = 14 dbm TOI = 24 dbm SHI = 48 dbm

More information

Low noise high linearity amplifier

Low noise high linearity amplifier Rev. 4 18 April 2016 Product data sheet 1. General description The is a low noise high linearity amplifier for wireless infrastructure applications, equipped with fast shutdown to support TDD systems.

More information

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor AT- Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Avago s AT- is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT- is housed in

More information

MA4AGSW8-2. AlGaAs SP8T PIN Diode Switch. Features. MA4AGSW8-2 Layout. Description. Absolute Maximum Ratings 1

MA4AGSW8-2. AlGaAs SP8T PIN Diode Switch. Features. MA4AGSW8-2 Layout. Description. Absolute Maximum Ratings 1 MA4AGSW82 AlGaAs SP8T PIN Diode Switch Features Specified Performance : 50 MHz to 40 GHz Operational performance: 50 MHz to 50 GHz 2.0 Typical Insertion Loss at 40 GHz 30 Typical Isolation at 40 GHz thru

More information

MADR-009269-0001TR. Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1. Functional Schematic. Features.

MADR-009269-0001TR. Single Driver for GaAs FET or PIN Diode Switches and Attenuators Rev. V1. Functional Schematic. Features. Features High Voltage CMOS Technology Complementary Outputs Positive Voltage Control CMOS device using TTL input levels Low Power Dissipation Low Cost Plastic SOIC-8 Package 100% Matte Tin Plating over

More information

= 25 C) of Demonstration Amplifier. Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units. Output Power W

= 25 C) of Demonstration Amplifier. Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units. Output Power W CGHV1425 25 W, 12-14 MHz, GaN HEMT for L-Band Radar Systems Cree s CGHV1425 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and

More information

RClamp2402B. Ultra-Low Capacitance TVS for ESD and CDE Protection. PROTECTION PRODUCTS - RailClamp Description. Features. Mechanical Characteristics

RClamp2402B. Ultra-Low Capacitance TVS for ESD and CDE Protection. PROTECTION PRODUCTS - RailClamp Description. Features. Mechanical Characteristics - RailClamp Description RailClamps are ultra low capacitance TS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are

More information

CLA4607-085LF: Surface Mount Limiter Diode

CLA4607-085LF: Surface Mount Limiter Diode DATA SHEET CLA4607-085LF: Surface Mount Limiter Diode Applications Low-loss, high-power limiters Receiver protectors Anode (Pin 1) Anode (Pin 3) Features Low thermal resistance: 55 C/W Typical threshold

More information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com HMC* Product Page Quick Links Last Content Update: 8//6 Comparable Parts

More information

LC03-6. Low Capacitance TVS for High-Speed Data Interfaces. Features. Description. Mechanical Characteristics. Applications

LC03-6. Low Capacitance TVS for High-Speed Data Interfaces. Features. Description. Mechanical Characteristics. Applications Description The LC0- transient voltage suppressor is designed to protect components which are connected to high speed telecommunication lines from voltage surges caused by lightning, electrostatic discharge

More information

MAPD-007530-0001TB. Low Cost Two-Way GMIC SMT Power Divider 1700 2000 MHz Rev. V2. Features. Functional Diagram. Description. Ordering Information

MAPD-007530-0001TB. Low Cost Two-Way GMIC SMT Power Divider 1700 2000 MHz Rev. V2. Features. Functional Diagram. Description. Ordering Information Features Small Size and Low Profile Typical Insertion Loss: 0.6 db Typical Amplitude Balance: 0.2 db 1 Watt Power Handling Lead-Free SOT-26 Package 100% Matte Tin Plating over Copper Halogen-Free Green

More information

LOW NOISE WIDEBAND AMPLIFIER IC WITH THROUGH FUNCTION

LOW NOISE WIDEBAND AMPLIFIER IC WITH THROUGH FUNCTION SiGe BiCMOS INTEGRATED CIRCUIT PD5740T6N LOW NOISE WIDEBAND AMPLIFIER IC WITH THROUGH FUNCTION DESCRIPTION The PD5740T6N is a low noise wideband amplifier IC mainly designed for the portable digital TV

More information

STF203-15 THRU STF203-33

STF203-15 THRU STF203-33 Description The STF03 is a combination EMI filter and line termination device with integrated diodes for use on upstream USB ports. It is constructed using a proprietary technology that allows passive

More information

TGF3015-SM. Applications. Product Features. Functional Block Diagram. General Description. Pin Configuration

TGF3015-SM. Applications. Product Features. Functional Block Diagram. General Description. Pin Configuration Applications Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency:

More information

77 GHz Flip-Chip Low Noise Amplifier. TriQuint Semiconductor: www. triquint.com (972) Fax (972) November 2009 Rev D

77 GHz Flip-Chip Low Noise Amplifier. TriQuint Semiconductor: www. triquint.com (972) Fax (972) November 2009 Rev D Gain, IRL, ORL (db) NF (db) 77 GHz Flip-Chip Low Noise Amplifier Key Features Frequency Range: 72-8 GHz Noise Figure: 5 db at 77 GHz Gain: 23 db Bias: Vd = 2.5 V, Id = 6 ma, Vg = +.18 V Typical Technology:.13

More information

AN BGU MHz to 2100 MHz LNA application. Document information

AN BGU MHz to 2100 MHz LNA application. Document information Rev. 1 1 March 2012 Application note Document information Info Keywords Abstract Content LNA, 1900 MHz to 2100 MHz, BGU7003, GSM, W-CDMA This application note provides circuit, layout, BOM and performance

More information

LM78XX Series Voltage Regulators

LM78XX Series Voltage Regulators LM78XX Series Voltage Regulators General Description Connection Diagrams The LM78XX series of three terminal regulators is available with several fixed output voltages making them useful in a wide range

More information

Top View (Near-side) Side View Bottom View (Far-side) ± ±.08. 4x.28. Orientation Marker Balanced port 1.

Top View (Near-side) Side View Bottom View (Far-side) ± ±.08. 4x.28. Orientation Marker Balanced port 1. Model BD2FA Ultra Low Profile 168 Balun Ω to Ω Balanced Description The BD2FA is a low profile sub-miniature balanced to unbalanced transformer designed for differential input locations on data conversion

More information

SKY12210-478LF: 0.9-4.0 GHz, 100 W High Power Silicon PIN Diode SPDT Switch

SKY12210-478LF: 0.9-4.0 GHz, 100 W High Power Silicon PIN Diode SPDT Switch DATA SHEET SKY12210-478LF: 0.9-4.0 GHz, 100 W High Power Silicon PIN Diode SPDT Switch Applications Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations Transmit/receive

More information

STF201-22 & STF201-30

STF201-22 & STF201-30 Description The STF201 is a combination EMI filter and line termination device with integrated TVS diodes for use on downstream USB ports. It is constructed using a proprietary technology that allows passive

More information

VCC1,2. H/L Lin. Bias, Enable, Detector Circuits

VCC1,2. H/L Lin. Bias, Enable, Detector Circuits Applications DSSS 5 GHz WLAN (IEEE802.11an) Access Points, PCMCIA, PC cards Features 5GHz Matched 22dBm Power Amplifier Integrated power amplifier enable pin (VEN) Buffered, temperature compensated power

More information

DRM compatible RF Tuner Unit DRT1

DRM compatible RF Tuner Unit DRT1 FEATURES DRM compatible RF Tuner Unit DRT1 High- Performance RF Tuner Frequency Range: 10 KHz to 30 MHz Input ICP3: +13,5dBm, typ. Noise Figure @ full gain: 14dB, typ. Receiver Factor: -0,5dB, typ. Input

More information