Finmeccanica Foundry and Italian perspectives on the application of GaN technology in future Space Mission. Claudio Lanzieri

Transcription

1 Finmeccanica Foundry and Italian perspectives on the application of GaN technology in future Space Mission Claudio Lanzieri Gennaio 2016 ASI, Roma. Primo Workshop Nazionale su La Componentistica Nazionale per lo Spazio: Stato dell arte, Sviluppi e Prospettive"

2 Outline Finmeccanica Foundry GaN Road Map National Competencies GaN for advanced TR Modules Conclusions 2

3 Development of Technologies and of Electronics Solid State Devices; Design and Test of advanced RF Components and Sub- Systems; R&D of emerging enabling technologies: compound semiconductors (GaAs, GaN, SiGe), Reliability evaluation and Components Qualification Microwave GaAs/GaN Components Manufacturing Q2 2015: start up of new clean room area Finmeccanica GaAs/GaN Foundry Manufacturing Line Clean Rooms: ~ 700m 2 Tools: ~ 30 M Human Resources = 29 (30% Graduated) R&D Line MMIC Design RF - Testing 3

4 Technologies Technology GaAs MESFET GaAs PHEMT GaN HEMT (0.5 Lg) GaN HEMT (0.25 Lg) TRL Level (Space) TRL 6 TRL 6 TRL 5 TRL 5 Component Typology F FL Discreet Power Bars and Medium Performance MMICs High performance MMICs for Power, Gain, Low-noise and Switching applications Very High Performance MMICs for Power, Robust Low-noise and Switching applications Very High Performance MMICs for Power, Robust Low-noise and Switching applications The Finmeccanica Foundry is a Strategic Foundry offering services focused on the development and manufacturing of components for Defense and Space applications. It has been organized into an integrated structure including: Development and Production of Devices MMICs Design Microelectronics Technologies for RF Sub-systems GaAs VPIN Diode TRL 4 MMICs for Power Limiter and Switching applications RF Si / SiGe TRL 4 Low-cost Mixed Signal ASICs for signal phase/amplitude control and/or processing GaAs E/D FET TRL 3/6 Specific Mixed Signal (Analog/Digital) MMICs for signal phase/amplitude control 100 W S Band HPA GaN HEMT 25 W C Band HPA GaN HEMT 15 W X Band HPA GaN HEMT L Band Chip - set (MESFET) C Band Chip - set (0.5 PHEMT) S Band Chip set (0.5 PHEMT) X Band Chip - set (0.25 PHEMT) WB Chip - set (0.25 PHEMT) Compact Receiver Chip - set (0.5 PHEMT) 4

5 High Temperature Reverse bias (HTRB) RF Step Stress Test Quality Lab capabilities InfraScopeTM TM HST Temperature Mapping System 0,25 Gate Length Device after 0 h (Blue) 2000h Tch = 250 C Destructive Analysis and SEM inspection TCV: Tb 70 + Bias 5

6 QUAGAS QUAGAS: QUAlifica Processo GaAS PHEMT ASI Contract: September 2012 Dec Objectives: Obtain the EPPL from ESCC to increase the competitiveness of the National and European industry Current status: The production line has completed the batches runs (18 wafers) TCV, DEC, RIC selection completed and packaged devices delivered to IMT for life tests ( ) Preliminary Evaluation of life test is running End of the project is 2016 (EPPL) 6

7 GaN Technology Status Half-micron technology has been developed for high performance and reliable power applications up to C-Band 0.5 µm technology is actually applied for MMICs prototype production g mmax ms/mm I DSS ma/mm V BGD V F t (25V) GHz F max (25V) GHz Gmax (10 GHz) db P OUT (25V) W/mm η 25V % > 250 > 600 > 100 > 16 > > 65% On the basis of this experience quarter-micron process has been developed for power applications up to Ku-Band frequency. This process technology represents the best solution to develop MMICs operating in X and 2-18 GHz WB g mmax ms/mm I DSS ma/mm V BGD V F t (25V) GHz F max (25V) GHz Gmax (10 GHz) db P OUT (25V) W/mm η 25V % > 250 > 700 > 100 > 25 > > 4 > 55% 7

8 GaN Technology Roadmap The development plan is based on Finmeccanica internal funding and external ones. Main External funding: Italian MoD (EDA-PNRM) ASI (GSTP-TRP) 8

9 A preliminary development of X Band HPA MMICs has been already funded by ASI In this first attempt a 0.5 µm GaN length process has been adopted for HPA and 0,25 µm for LNA Different versions of HPA were designed and implemented by MECSA and TAS-I Return loss (input and output) better than 10dB in the frequency band 8-12 GHz has been obtained with a gain larger than 15dB Output power of 41dBm with a PAE greater than 35% in the bandwidth GHz has been measured A three stage LNA was designed to achieve a Noise Figure (NF) better than 2.5dB in the bandwidth GHz and an associate linear gain of 18dB minimum. GaN for advanced TR Modules SAPERE-SAFE (MIUR) SAPERE. Space Advance Project Excellence in Research and Enterprise. SAFE (Space Asset For Emergency): The GaN HEMT 0.25 µm technology will be applied to develop Robust X-Band LNA Foundry WP start: Q WP duration: 17 months Further evaluation of 0,5 and 0,25 µm process will start this year (ASI MECSA) The GaN HEMT 0.5 µm devices will be applied up to C Band frequency application The GaN HEMT 0.25 µm devices will be applied up to 18 GHz application Significant HPAs and Power Bars for Space Application will be developed at the end of the project Project start: Q Project duration: 16 months 9

10 Quarter-micron technology Wafer Processing or structures identification A test plan aimed at evaluating the reliability figures of merit concerning 0.25 µm GaN technology will be start this year. The first part of the activity is meant to fully characterize PCM, DEC and RIC test structures in order to demonstrate that they can be used for the reliability demonstration This is followed by a second part primarily focused on reliability demonstration and proof of radiation hardness. Performance DC measurements (PCM, DEC and RIC) ) RF measurements (PCM, DEC and RIC) Pulsed measurements (PCM) Reliability On-wafer reliability Packaged reliability Packaged Radiation effects 10

11 PRAGAN PRAGAN Preliminary Reliability Assessment of a European 0.25 µm GaN HEMT Process ESA Contract: September 2015 Dec Objectives: Preliminary Reliability Assessment of a SES 0.25 µm GaN HEMT process This work is organized into two technical tasks: Task 1 (9 months): Preliminary performances and Space reliability assessment of actual technology RF TEST Task 2 (18 months): Process and epitaxy optimization. Final aim of this task is to perform an evaluation of L G =0.25µm technology reproducibility and reliability, as well as a preliminary Space evaluation, and validation of an European epi-layer supplier. TCV PCM Current status: Design of TCV, DEC, RIC Lay Out; Test Plan Definition Process start December 2015 RIC DEC RF TEST 11

12 Single Chip Front End (SCFE) The objective is to develop components for T/R modules with an high number of functionality, obtained thanks to the integration of HPA, LNA and Switch in the same chip. This solution allows to reduce the number of MMICs and consequently the number of interconnections, then minimizing the size. All this leads to a performance improvement and a reduction of recurrent costs. A preliminary study promoted by ESA has been completed to evaluate SCFE, operating in C band with the goal of: Pout > 40W ; 40% PAE ; 37dB gain on the transmit mode; 37dB gain and less than 2.5 db noise figure in receive mode, including T/R SPDT switch losses SCFE will be develop in 2016 applying 0,25 gate device As a part of this action will be also introduced the valuation of GaN Power Bar Design, Manufacture, Modelling (GaN processes 0.25µm and 0.5µm) 12

13 Ka Band technology (0.15 0,1 µm) Reliability physics of scaled, high-frequency GaN HEMT technology: a built-in reliability approach This project is devoted to a detailed study of the physics of failure of scaled AlGaN/GaN HEMT for space applications. The aim is to provide a scientific basis to the accelerated test and extrapolation procedures used for the evaluation of devices and systems lifetime. Objective 1: Definition of acceleration laws for the main failure mechanisms of GaN HEMTs. This goal will be pursued by means of a series of experiments on suitably designed 0.25 µm and 0.15 µm GaN HEMT test structures, aimed at accelerating specific failure mechanisms. Objective 2: Development of a European 0.15 µm technology by Finmeccanica 13

14 GaN technology providing at the same time: National Competencies High power density High efficiency Low noise performance combined with robustness to high RF signals Wideband operation capability For these reasons actually GaN MMICs represents the best solution for the development of very compact and efficient Transmit Receive (TR) Module as required for future Radar Systems for Defense and Space Application Industrial & Academic teams of synergic competencies, supported by the Italian Space Agency (ASI), are promoting specific actions to promote an Independent National Capability on GaN technology 14

15 MECSA Capability Active Device Characterisation Noise, Small- and Large-Signal modelling Physical simulation and modelling Thermal simulation and Characterisation System-level characterisation and modelling High-Efficiency PA design High sensitivity receiver design Highly integrated subsystems design (Core Chip, T/R) EM simulation and packaging Integrated Antenna design Millimeter-wave characterisation up to 110GHz More than 100 researchers in 10 Italian university departments Computer Controlled Microwave Tuner 50 Ohm LOOP FREQUENCY AND AMPLITUDE TUNING T3 CIRCULATOR Active Harmonic Load-Pull Phase noise characterisation PHASE NOISE DATA ACQUISITION ISOLATOR BIAS TEE Gate/Base Bias Network BANDPASS FILTER AT 6.5 GHz Computer Controlled Microwave Tuner S2 T1 ZIN TUNING E5052A SIGNAL SOURCE ANALYZER DIRECTIONAL COUPLER Probe Station On Wafer DEVICE SPECTRUM ANALYZER AND POWER METER DIRECTIONAL COUPLER Computer Controlled Microwave Tuner T2 ZOUT TUNING S1 BIAS TEE S3c S3 ISOLATOR Drain/Coll Bias Supply POWER AND FREQUENCY DATA ACQUISITION X-band Core Chip PC SOFTWARE CONTROL AND DATA ACQUISITION IC/ID ACQUISITION C-Band 40W MMIC HPA 15

16 University of Padova Capability Electrical characterization: DC, RF, Pulsed Evaluation and understanding of parasitic effects in electronic devices Reliability lab, environmental testing, DC life tests, ESD test Failure Analysis Lab (Emission Microscopy, DLTS, SIMS,.) Radiation hardness testing The main targets are: i) evaluate device performance ii) characterize parasitic phenomena in electronic devices iii) identify degradation modes and mechanisms, with the aim of provide technological countermeasure for the development of high performance and robust devices. Accel RF Test Bench EMMI, Spatially and Spectrally-resolved Electroluminescence Traps characterization & identification Environmental chambers: C (humidity) 16

17 CNR IFN Lab Capabilities Electron Beam Lithography For GaAs & GaN Gate Contact Trilayer resist 250 nm SEM Zeiss Evo MA10 EBL EBPG-5HR - field emission gun FEG - 100kV - beam diameter: 8 nm - overlay accuracy <50nm - 4 direct writing area - 10 MHz frequency FIB Dual Beam FEI Helios Nanolab DRAIN GATE SOURCE 17

18 IMT Capability Destructive physical analysis Failure analysis Construction analysis Up-screening Relife Thermal Shock (air-air / liquid-liquid) and Thermal Cycle High Stabilization Bake Humidity Test 85 C/85%RH Highly-Accelerated Temperature and Humidity Stress Test (HAST) Burn-in Life test Electrical test characterization (also at RF up to 40 GHz) Hermeticity test Radiation test TID DD - SEE Xrays CSAM Environmental Tests Equipments Analogue, digital and radiofrequency (up to 40 GHz) electrical tests (at ambient, low and high temperatures; (-65 C +150 C) on EEE parts are performed with a large number of automatic and PC controlled test equipments. Measurement Test Bench 18

19 LFoundry Quality Lab Capabilities TEM x-section STEM Image Chemical Characterization Focused Ion Beam Scanning Electron Microscopy Transmission Electron Microscopy Infrared Emission Microscopy Spectrofluorimetry Atomic Force Microscopy Tip Enhanced Raman Spectroscopy Mercury Probing Optical Simulation 19

20 Conclusion Finmeccanica GaN HEMT technology, represents a National and European asset to increase the competitiveness of all the Italian and European industries Release on EPPL of 0.25 μm GaAs Micro-Strip Technology for 2016 Reliability assessment of 0.25 µm GaN Micro-Strip technology for Space application expected for the end of Development of 0.15 µm GaN Micro-Strip technology for Space application expected for Q On the basis of this technological capability, the Italian Space Agency (ASI) is supporting the creation of an Italian National team of competencies in order to promote a European GaN technology for the next European Space missions where the Finmeccanica production line represents a strategic asset 20

21 THANK YOU FOR YOUR ATTENTION Claudio Lanzieri