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1 Semiconductores de potencia de gap ancho en organismos internacionales Philippe Godignon & Power devices and Systems Group Systems Integration Department Centro Nacional de Microelectrónica, CNM CNM-CSIC, Campus Universidad Autónoma de Barcelona, Bellaterra, Barcelona, Spain

2 Why WBG Semiconductors? Power devices High Electric Field Wide Band Gap GaN < 600V SiC > 600V RF devices High Carrier GaN Saturation Velocity M-NEMS Higher Young Modulus GaN, SiC, AlN Chemical Sensors (gas, HT,...) Hardness Inertness SiC Thermal management Thermal conductivity SiC (substrate for GaN), Diamond Bio-sensors Biocompability SiC, GaN, Diamond Transparency Light emission Direct gap Wide band gap GaN

3 Why WBG Semiconductors? Power devices WBG Silicon limit

4 European activities in SiC European Space Agency CHPCA, HTBD-BEPI, BEPI PowJFET European Technology Platforms (Plan E) E3CAR, SmartPM, LASTPOWER CATRENE (Avanza) OPTIMIZE, THOR European Framework JESICA, ESCAPEE, FLASIC, MANSIC EDA (MOD) No activities in SiC

5 European Space Agency European Space Agency TRP & GSTP projects, Missions Potential interest 1. RF, MMICs (GaN, several projects) 2. Power switching g( GaN HEMT (IMEC), SiC JFETs (Forth)) 3. Satellites power systems (SiC (CRISA)) 4. High temperature electronics (SiC for BepiColombo (CNM, Tyndal), GaN sensors)

6 European Space Agency High temperature protection diodes for Solar Cell Panel D+T Microelectrónica/CNM, Alter, Univ. Valencia, Ampère, Semelab Space mission BepiColombo will set off in 2013 on a journey to Mercury lasting approximately 6 years. High temperature t SiC blocking diodes d for solar panel arrays: series protection devices for solar cells arrays Working temperature range -170C to +300C High reliability Radiation hard Stable with thermal cycling

7 Typical expected temperature Tª (ºC) European Space Agency cycle submitted to the devices 300º oven V F =5A 25º No drift of forward volage drop or reverse leakage current over the full range of temperature 0º cryostat -170º exit of eclipse proper operation SA 45min entering in eclipse proper opert. System 45min No degradation of interconnection and package Bf Before stress After stress

8 European Space Agency CHPCA: Components for High Power Conditioning i i Applications i ESTEC Contract number 18755/04/NL/CP Astrium-CRISA, D+T Microelectrónica/CNM, i Norstel Targeted application: High voltage power devices for power supplies for travelling waves tubes, conditionners for ion thrusters and other power systems inside satellites 1. 4kV high voltage SiC PiN diodes kV SiC bipolar transistors New MESA technology: epitaxied anode Especially prepared material for low BPD density by Norstel Higher conductivity modulation

9 European Space Agency SiC 4kV PiN Diodes & bipolar transistors Breakdown voltage higher than 5kV 0,4 Low Stacking faults density after stress 0,2 Confirm the low impact of our technological process I C (A) 0,8 63 IL2 0, , V CE (V) J C (A.cm -2 ) PiN Diodes Bipolar Transistor 30 C (A) I C 1µ 100n 10n A2 small diode (15) A2 large diode (16) β max IS1 IS2 IS3 OS1 1n 5 100p V CE (V) I C (ma)

10 PLAN E - ENIAC ENIAC platform: WBG semiconductors appear clearly in the R&D objectives E3CAR Programa Nacional de Internacionalización de la I+D, subprograma de fomento de la cooperación Científica Internacional (FCCI) PLAN E Coordinator: Infineon Spanish partners: CIDETEC, CNM-CSIC

11 PLAN E - ENIAC

12 PLAN E - ENIAC SiC Diodes + GaN HEMT MOSFET Ultra low R on T j 250ºC

13 PLAN E - ENIAC Development of a SiC power switch with 270ºC operation temperature capability 1 st demonstrator: Power MOSFET 1200V Process running On Chip integration: High temperature electronics

14 PLAN E - ENIAC Smart power management in home and health Programa Nacional de Internacionalización de la I+D, subprograma de fomento de la cooperación Científica Internacional (FCCI) PLAN E High voltage multiplier for generators of X-ray applications C AS1 C AS2 C AS3 C AS4 U PP1 U PP12 U PP3 U PP4 D -A1 D +A1 D -A2 D +A2 D -A4 D +A4 D -A4 D +A4 25mOhm.cm 2 dynamic U C1 U C2 U C3 U C4 on-resistance I Last C 1 C 2 C 3 C 4 D -B1 D +B1 D -B2 D +B2 D -B4 D +B4 D -B4 D +B4 C BS1 C BS2 C BS3 C BS4 SiC Schottky diodes d 5kV 40 diodes in series: 200kV per leg Fast switching low input capacitance required

15 OPTIMIZE-APOLO CATRENE- AVANZA AVANZA I+D 2009: ACCIÓN ESTRATÉGICA DE TELECOMUNICACIONES Y SOCIEDAD DE LA INFORMACIÓN SUBPROGRAMA AVANZA I+D Coordinator: EADS (F) Spanish partners: Thales, Alter, CNM-CSIC, CSIC, UC3, UB Objective: Optimised mitigations for advanced digital and power systems in order to solve the major issue of their reliability against the increasing problem of soft, firm and hard errors Targeted applications: Automotive, aeronautics, space Study of radiation impact on SiC and GaN power diodes and switches Modelling and experimentals: proton irradiation, gamma, laser tests Few data on the topic

16 EUROPEAN FP EU Framework: no specific call or priority R&D line for WBG semiconductors Establish Silicon Carbide Applications for Power Electronics in Europe (ESCAPEE) Coordinator: Areva (UK) Main partners: Alstom, Dynex, Semelab, CNM-CSIC The main objective of ESCAPEE is to develop power MOSFET switches and a complementary power diodes d to operate at voltages from 600V up to 3.3kV. 3kV Targeted application: Traction, motor drives, energy distribution

17 EUROPEAN FP MEMS WBG advantages for MEMS Higher young modulus (x3 for SiC) Higher field strength (x3 for SiC) 3C-SiC on Si, GaN on Si, AlN on Si 0.8um 2um 3.2um 300um Resonance frequency and quality factor multiplied by more than 3

18 EUROPEAN FP DIAMOND Some Diamond activities in EU projects: Mil Mainly for thermal management t( (currently one project GaN+Diamond) For biomedical application Highest factors of merit for power devices (Unipolar) Univ. of Cadiz: Activities in material growth and characterizacion; a lot of collaboration at EU level ISOM: Activites with Fraunhofer Friburg CNM: capability to process Diamond devices; long collaboration in other fields with some current major player in EU (Cambridge, Thales, Alstom, CEA, )

19 Conclusions WBG semiconductors highly promising Commercial devices available (SiC Schottky, GaN HEMT) Very high potential for power and other applications Open new applications fields Starting material: low production capability, defect density still to be improved Cost!

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