Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 93773A IRF820A HEXFET Power MOSFET V DSS R DS (on) max I D 500V 3.0Ω 2.5A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective C OSS specified (See AN 0) TO220AB G D S Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 2.5 I D @ T C = 0 C Continuous Drain Current, V GS @ V.6 A I DM Pulsed Drain Current P D @T C = 25 C Power Dissipation 50 W Linear Derating Factor 0.4 W/ C V GS GatetoSource Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ƒ 3.4 V/ns T J Operating Junction and 55 to 50 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torqe, 632 or M3 screw lbf in (.N m) Typical SMPS Topologies: l Two transistor Forward l Half Bridge and Full Bridge Notes through are on page 8 www.irf.com 5/8/00
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Voltage 500 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.60 V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance 3.0 Ω V GS = V, I D =.5A V GS(th) Gate Threshold Voltage 2.0 4.5 V V DS = V GS, I D = 250µA I DSS DraintoSource Leakage Current 25 V µa DS = 500V, V GS = 0V 250 V DS = 400V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 0 V GS = 30V na GatetoSource Reverse Leakage 0 V GS = 30V Dynamic @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance.4 S V DS = 50V, I D =.5A Q g Total Gate Charge 7 I D = 2.5A Q gs GatetoSource Charge 4.3 nc V DS = 400V Q gd GatetoDrain ("Miller") Charge 8.5 V GS = V, See Fig. 6 and 3 t d(on) TurnOn Delay Time 8. V DD = 250V t r Rise Time 2 ns I D = 2.5A t d(off) TurnOff Delay Time 6 R G = 2Ω t f Fall Time 3 R D = 97Ω,See Fig. C iss Input Capacitance 340 V GS = 0V C oss Output Capacitance 53 V DS = 25V C rss Reverse Transfer Capacitance 2.7 pf ƒ =.0MHz, See Fig. 5 C oss Output Capacitance 490 V GS = 0V, V DS =.0V, ƒ =.0MHz C oss Output Capacitance 5 V GS = 0V, V DS = 400V, ƒ =.0MHz C oss eff. Effective Output Capacitance 28 V GS = 0V, V DS = 0V to 400V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 40 mj I AR Avalanche Current 2.5 A E AR Repetitive Avalanche Energy 5.0 mj Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 2.5 R θcs CasetoSink, Flat, Greased Surface 0.50 C/W R θja JunctiontoAmbient 62 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 2.5 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse (Body Diode) pn junction diode. S V SD Diode Forward Voltage.6 V T J = 25 C, I S = 2.5A, V GS = 0V t rr Reverse Recovery Time 330 500 ns T J = 25 C, I F = 2.5A Q rr Reverse RecoveryCharge 760 40 nc di/dt = 0A/µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L D ) 2 www.irf.com
I D, DraintoSource Current (A) 0. VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0.0 0. 0 V DS, DraintoSource Voltage (V) 20µs PULSE WIDTH T J = 50 C 0. 0 V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, DraintoSource Current (A) 0. T = 50 J C T = 25 J C V DS= 50V 20µs PULSE WIDTH 0.0 4.0 5.0 6.0 7.0 8.0 9.0 V GS, GatetoSource Voltage (V) R DS(on), DraintoSource On Resistance (Normalized) 3.0 I D = 2.5A 2.5 2.0.5.0 0.5 V GS = V 0.0 60 40 20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature www.irf.com 3
C, Capacitance(pF) IRF820A 000 00 0 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss Coss Crss 0 00 V DS, DraintoSource Voltage (V) Fig 5. Typical Capacitance Vs. DraintoSource Voltage V GS, GatetoSource Voltage (V) 20 5 5 I = D 2.5A V DS = 400V V DS = 250V V DS = 0V FOR TEST CIRCUIT SEE FIGURE 3 0 0 4 8 2 6 Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge Vs. GatetoSource Voltage 0 OPERATION IN THIS AREA LIMITED BY R DS(on) I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C V GS = 0 V 0. 0.4 0.6 0.8.0.2 V SD,SourcetoDrain Voltage (V) I D, Drain Current (A) us 0us ms TC = 25 C ms TJ = 50 C Single Pulse 0. 0 00 000 V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
3.0 V DS R D I D, Drain Current (A) 2.5 2.0.5.0 R G V GS V Pulse Width µs Duty Factor 0. % D.U.T. Fig a. Switching Time Test Circuit V DD 0.5 V DS 90% 0.0 25 50 75 0 25 50 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = 0.50 0.20 0. 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase www.irf.com 5
V DSav, Avalanche Voltage ( V ) IRF820A R G V DS 20V tp Fig 2a. Unclamped Inductive Test Circuit tp L D.U.T I AS 0.0Ω V (BR)DSS 5V DRIVER V DD A E AS, Single Pulse Avalanche Energy (mj) 300 250 200 50 0 50 TOP BOTTOM I D.A.6A 2.5A 0 25 50 75 0 25 50 Starting T, Junction Temperature ( J C) I AS Fig 2b. Unclamped Inductive Waveforms Q G Fig 2c. Maximum Avalanche Energy Vs. Drain Current V Q GS Q GD 700 V G 650 Current Regulator Same Type as D.U.T. Charge Fig 3a. Basic Gate Charge Waveform 600 50KΩ 2V.2µF.3µF D.U.T. V DS 550 0.0 0.5.0.5 2.0 2.5 V GS I AV, Avalanche Current ( A) 3mA I G I D Current Sampling Resistors Fig 2d. Typical DraintoSource Voltage Fig 3b. Gate Charge Test Circuit Vs. Avalanche Current 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReApplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For NChannel HEXFET Power MOSFETs www.irf.com 7
Package Outline TO220AB Dimensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530).54 (.45).29 (.405) 2 3 4 6.47 (.255) 6. (.240) 3.78 (.49) 3.54 (.39) A.5 (.045) MIN 4.06 (.60) 3.55 (.40) 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) LEAD ASSIGNMENTS GATE 2 DRAIN 3 SOURCE 4 DRAIN.40 (.055) 3X.5 (.045) 2.54 (.0) 2X 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M, 982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220AB EXAMPLE : THIS IS AN IRF W ITH ASSEMBLY LOT CODE 9BM Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 45mH R G = 25Ω, I AS = 2.5A. (See Figure 2) ƒ I SD 2.5A, di/dt 270A/µs, V DD V (BR)DSS, T J 50 C INTERNATIONAL RECTIFIER LO GO ASSEMBLY LOT CODE IRF 9246 9B M Pulse width 300µs; duty cycle 2%. A PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 25275 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: 44 (0)20 8645 8000 IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: 49 (0) 672 96590 IR ITALY: Via Liguria 49, 07 Borgaro, Torino Tel: 39 0 45 0 IR JAPAN: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo 7 Tel: 8 (0)3 3983 0086 IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3, Singapore 237994 Tel: 65 (0)838 4630 IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886(0)2 2377 9936 Data and specifications subject to change without notice. 5/00 8 www.irf.com