PNP 2N6040, 2N6042, 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic MediumPower Complementary Silicon Transistors Plastic mediumpower complementary silicon transistors are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter Sustaining Voltage @ madc V CEO(sus) = 60 (Min) 2N6040, 2N6043 = (Min) 2N6042, 2N6045 Low CollectorEmitter Saturation Voltage V CE(sat) = (Max) @ I C = 4.0 Adc 2N6043,44 = (Max) @ I C = Adc 2N6042, 2N6045 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors Epoxy Meets UL 94 V0 @ 25 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V PbFree Packages are Available* MAXIMUM RATINGS (Note 1) Rating SymbolÎ Value ÎÎ Unit CollectorEmitter Voltage 2N6040 V CEO Î 60 2N6043 2N6042 2N6045 CollectorBase Voltage 2N6040 V CB 2N6043 2N6042 Î 60 ÎÎ Î ÎÎ 2N6045 EmitterBase Voltage V EB 5.0 Collector Current Continuous Peak I C 8.0 Î 16 ÎÎ Adc Base Current IB Î 1 ÎÎ madc Total Power Dissipation @ T C = 25 C Derate above 25 C Î P D 75 ÎÎ Î 0.60 ÎÎ W W/ C Operating and Storage Junction T J, T stg Î 65 to +150 ÎÎ C Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 1 DARLINGTON, 8 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS, 75 WATTS CASE 221A09 STYLE 1 MARKING DIAGRAM 2N604xG AYWW 2N604x = Device Code x = 0, 2, 3, or 5 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 06 May, 06 Rev. 7 1 Publication Order Number: 2N6040/D
PNP 2N6040, 2N6042, 2N6043, 2N6045 ÎÎ THERMAL CHARACTERISTICS Characteristic Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoAmbient ÎÎ Symbol Max Unit JC ÎÎ 1.67 C/W Î 57 C/W ÎÎ *ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V C = madc, I B = 0) 2N6040, 2N6043 CEO(sus) 60 2N6042, 2N6045 Collector Cutoff Current I CEO (V CE = 60, I B = 0) 2N6040, 2N6043 (V CE =, I B A = 0) 2N6042, 2N6045 ÎÎ Collector Cutoff Current I (V CE = 60, V BE(off) = 1.5 ) 2N6040, 2N6043 CEX A (V CE =, V BE(off) = 1.5 ) 2N6042, 2N6045 (V CE = 60, V BE(off) = 1.5, T C = 150 C) 2N6040, 2N6043 (V CE = 80, V BE(off) = 1.5, T C = 150 C) 2N6041, 2N6044 0 (V CE =, V BE(off) = 1.5, T C = 150 C) 2N6042, 2N6045 0 Collector Cutoff Current I (V CB = 60, I E CBO = 0) 2N6040, 2N6043 A (V CB =, I E = 0) 2N6042, 2N6045 Emitter Cutoff Current (V BE = 5.0, I C = 0) I EBO madc ÎÎ ON CHARACTERISTICS DC Current Gain h FE C = 4.0 Adc, V CE = 4.0 ) 2N6040, 2N6043, 0.000 C = Adc, V CE = 4.0 ) 2N6042, 2N6045 0,000 C = 8.0 Adc, V CE = 4.0 ) All Types CollectorEmitter Saturation Voltage V C = 4.0 Adc, I B = 16 madc) 2N6040, 2N6043, CE(sat) C = Adc, I B = 12 madc) 2N6042, 2N6045 C = 8.0 Adc, I B = 80 Adc) All Types 4.0 BaseEmitter Saturation Voltage C = 8.0 Adc, I B = 80 madc) V BE(sat) 4.5 BaseEmitter On Voltage C = 4.0 Adc, V CE = 4.0 ) V BE(on) 2.8 ÎÎ DYNAMIC CHARACTERISTICS Small Signal Current Gain C = Adc, V CE = 4.0, f = MHz) h fe 4.0 Output Capacitance 2N6040/2N6042 C ob (V CB = 10, I E pf = 0, f = MHz) 2N6043/2N6045 0 ÎÎ SmallSignal Current Gain C = Adc, V CE = 4.0, f = khz) *Indicates JEDEC Registered Data. JA h fe 2
PNP 2N6040, 2N6042, 2N6043, 2N6045 T A 4.0 T C 80 PD, POWER DISSIPATION (WATTS) 60 40 T A T C 0 0 0 40 60 80 1 140 160 T, TEMPERATURE ( C) Figure 1. Power Derating R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D 1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE I B ma MSD6 USED BELOW I B ma V 2 approx + 8.0 V 0 V 1 approx 12 V t r, t f 10 ns DUTY CYCLE = % 25 s 51 Figure 2. Switching Times Equivalent Circuit R B D 1 + 4.0 V 8.0 k R C TUT 1 V CC 30 V SCOPE for t d and t r, D 1 is disconnected and V 2 = 0 For test circuit reverse all polarities and D1. t, TIME ( s) μ 5.0 0.7 t s t r V CC = 30 V I C /I B = 250 I B1 = I B2 0.07 PNP t d @ V BE(off) = 0 V 0.7 5.0 7.0 10 Figure 3. Switching Times t f r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.07 0.03 0.02 D = 0.02 SINGLE PULSE 0.01 JC (t) = r(t) JC JC = 1.67 C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) JC (t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2 0.01 0.01 0.02 0.03 5.0 10 30 50 0 500 0 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response 3
PNP 2N6040, 2N6042, 2N6043, 2N6045 IC, COLLECTOR CURRENT (AMP) 10 5.0 0.02 500 s ms dc T J = 150 C 5.0 ms BONDING WIRE LIMITED THERMALLY LIMITED @ T C = 25 C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V CEO 2N6040, 2N6043 2N6045 s 5.0 7.0 10 30 50 70 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 5. ActiveRegion Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. hfe, SMALLSIGNAL CURRENT GAIN 10,000 5000 0 00 0 500 0 50 30 10 T C = 25 C V CE = 4.0 I C = Adc PNP 30 5.0 10 50 0 500 0 5.0 10 f, FREQUENCY (khz) V R, REVERSE VOLTAGE (VOLTS) C, CAPACITANCE (pf) 0 70 50 PNP C ib C ob 50 Figure 6. SmallSignal Current Gain Figure 7. Capacitance PNP 2N6040, 2N6042 2N6043, 2N6045 hfe, DC CURRENT GAIN,000 10,000 7000 5000 0 00 0 700 500 T J = 150 C 25 C 55 C V CE = 4.0 V hfe, DC CURRENT GAIN,000 10,000 7000 5000 0 00 0 700 500 T J = 150 C 25 C 55 C V CE = 4.0 V 0 0.7 5.0 7.0 10 0 Figure 8. DC Current Gain 0.7 5.0 7.0 10 4
PNP 2N6040, 2N6042, 2N6043, 2N6045 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 2.6 2.2 1.8 1.4 I C = A 4.0 A 6.0 A 0.7 5.0 7.0 10 30 I B, BASE CURRENT (ma) VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 2.6 2.2 1.8 1.4 Figure 9. Collector Saturation Region I C = A 4.0 A 6.0 A I B, BASE CURRENT (ma) 0.7 5.0 7.0 10 30 2.5 2.5 V, VOLTAGE (VOLTS) 1.5 V BE @ V CE = 4.0 V V BE(sat) @ I C /I B = 250 V CE(sat) @ I C /I B = 250 0.7 5.0 7.010 V, VOLTAGE (VOLTS) 1.5 V BE(sat) @ I C /I B = 250 V BE @ V CE = 4.0 V V CE(sat) @ I C /I B = 250 0.7 5.0 7.0 10 Figure 10. On Voltages ORDERING INFORMATION Device Package Shipping 2N6040 2N6040G 2N6042 2N6042G 2N6043 2N6043G 2N6045 2N6045G (PbFree) (PbFree) (PbFree) (PbFree) 50 Units / Rail 5
PNP 2N6040, 2N6042, 2N6043, 2N6045 PACKAGE DIMENSIONS TO2 CASE 221A09 ISSUE AB H Q Z L V G B 4 1 2 3 N D A K F T U S R J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 70 0.6 14.48 15.75 B 80 0.405 9.66 18 C 60 90 4.07 4.82 D 0.025 0.035 0.64 0.88 F 42 47 3.61 3.73 G 0.095 05 2.42 2.66 H 10 55 2.80 3.93 J 0.018 0.025 0.46 0.64 K 00 62 12.70 14.27 L 0.045 0.060 1.15 1.52 N 90 10 4.83 5.33 Q 00 2.54 4 R 0.080 10 4 2.79 S 0.0 5 08 1.39 T 35 55 5.97 6.47 U 0.000 0 0.00 1.27 V 0.045 1.15 Z 0.080 4 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81357733850 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6040/D