Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 1.5 Q g (Max.) (nc) 8. Q gs (nc) 1.8 Q gd (nc) 4.5 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 00/95/EC Available RoHS* COMPLIANT TO0AB G DS G D S NChannel MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO0AB package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO0AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)free SnPb TO0AB IRF610PbF SiHF610E3 IRF610 SiHF610 ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 00 V GateSource Voltage ± 0 Continuous Drain Current at T C = 5 C 3.3 I D T C = 100 C.1 A Pulsed Drain Current a I DM 10 Linear Derating Factor 0.9 W/ C Single Pulse Avalanche Energy b E AS 64 mj Repetitive Avalanche Current a I AR 3.3 A Repetitive Avalanche Energy a E AR 3.6 mj Maximum Power Dissipation T C = 5 C P D 36 W Peak Diode Recovery dv/dt c dv/dt 5.0 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to 150 Soldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 63 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 5 C, L = 8.8 mh, R g = 5, I AS = 3.3 A (see fig. 1). c. I SD 3.3 A, di/dt 70 A/μs, V DD, T J 150 C. d. 1.6 mm from case. 10 lbf in 1.1 N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 9103 www.vishay.com S110510Rev. B, 1Mar11 1
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 6 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc 3.5 SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage = 0 V, I D = 50 μa 00 V Temperature Coefficient /T J Reference to 5 C, I D = 1 ma 0.30 V/ C GateSource Threshold Voltage (th) =, I D = 50 μa.0 4.0 V GateSource Leakage I GSS = ± 0 V ± 100 na = 00 V, = 0 V 5 Zero Gate Voltage Drain Current I DSS = 160 V, = 0 V, T J = 15 C 50 μa DrainSource OnState Resistance R DS(on) = I D =.0 A b 1.5 Forward Transconductance g fs = 50 V, I D =.0 A b 0.8 S Dynamic Input Capacitance C iss = 0 V, 140 Output Capacitance C oss = 5 V, 53 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5 15 Total Gate Charge Q g 8. GateSource Charge Q gs I = D = 3.3 A, = 160 V, see fig. 6 and 13 b 1.8 nc GateDrain Charge Q gd 4.5 TurnOn Delay Time t d(on) 8. Rise Time t r V DD = 100 V, I D = 3.3 A, 17 TurnOff Delay Time t d(off) R g = 4, R D = 30, see fig. 10 b 14 ns Fall Time t f 8.9 D Internal Drain Inductance L Between lead, D 4.5 6 mm (0.5") from package and center of nh G Internal Source Inductance L S die contact 7.5 DrainSource Body Diode Characteristics Continuous SourceDrain Diode Current I MOSFET symbol D S 3.3 showing the integral reverse Pulsed Diode Forward Current a G I SM p n junction diode 10 Body Diode Voltage V SD T J = 5 C, I S = 3.3 A, = 0 V b.0 V Body Diode Reverse t rr 150 310 ns Recovery Time T J = 5 C, I F = 3.3 A, di/dt = 100 A/μs b Body Diode Reverse Recovery Charge Q rr 0.60 1.4 μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle %. S S A www.vishay.com Document Number: 9103 S110510Rev. B, 1Mar11
TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) 9103_01 10 1 10 0 Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 10 0 10 1 4.5 V 0 µs Pulse Width T C = 5 C, DraintoSource Voltage (V) 9103_03 10 0 10 4 0 µs Pulse Width = 50 V 5 6 7 8 9 10, GatetoSource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 5 C Fig. 3 Typical Transfer Characteristics 9103_0 10 0 Top Bottom 15 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 10 0 10 1, DraintoSource Voltage (V) 4.5 V 0 µs Pulse Width T C = 150 C R DS(on), DraintoSource On Resistance (Normalized) 9103_04 3.5 3.0.5.0 1.5 1.0 0.5 I D = 3.3 A = 0.0 60 40 0 0 0 40 60 80 100 10 140 160 T J, Junction Temperature ( C) Fig. Typical Output Characteristics, T C = 150 C Fig. 4 Normalized OnResistance vs. Temperature Document Number: 9103 www.vishay.com S110510Rev. B, 1Mar11 3
Capacitance (pf) 9103_05 300 50 00 150 100 50 0 10 0 10 1 = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss C rss, DraintoSource Voltage (V) I SD, Reverse Drain Current (A) 9103_07 10 1 150 C 10 0 5 C = 0 V 0.4 0.8 1. 1.6.0 V SD, SourcetoDrain Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage Fig. 7 Typical SourceDrain Diode Forward Voltage, GatetoSource Voltage (V) 0 16 1 8 4 0 I D = 3.3 A = 40 V = 100 V = 160 V 0 4 6 8 9103_06 Q G, Total Gate Charge (nc) For test circuit see figure 13 10 9103_08 10 5 10 5 1 5 0.1 5 10 0.1 5 Operation in this area limited by R DS(on) 1 T C = 5 C T J = 150 C Single Pulse 5, DraintoSource Voltage (V) 100 µs 1 ms 10 ms 10 5 10 5 10 3 Fig. 6 Typical Gate Charge vs. GatetoSource Voltage Fig. 8 Maximum Safe Operating Area www.vishay.com Document Number: 9103 4 S110510Rev. B, 1Mar11
R D 4.0 R G D.U.T. V DD 3.0.0 1.0 Pulse width 1 µs Duty factor 0.1 % Fig. 10a Switching Time Test Circuit 9103_09 0.0 5 50 75 100 15 150 T C, Case Temperature ( C) 90 % 10 % t d(on) t r t d(off) t f Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) 1 0.1 0 0.5 0. 0.1 0.05 0.0 0.01 Single Pulse (Thermal Response) 10 10 5 10 4 10 3 10 0.1 1 10 P DM t 1 t Notes: 1. Duty Factor, D = t 1 /t. Peak T j = P DM x Z thjc T C 9103_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase Document Number: 9103 www.vishay.com S110510Rev. B, 1Mar11 5
Vary t p to obtain required I AS R G L D.U.T I AS V DD t p V DD t p 0.01 Ω I AS Fig. 1a Unclamped Inductive Test Circuit Fig. 1b Unclamped Inductive Waveforms E AS, Single Pulse Energy (mj) 9103_1c 140 10 100 80 60 40 0 Top Bottom V DD = 50 V 0 5 50 75 100 15 150 Starting T J, Junction Temperature ( C) I D 1.5 A.1 A 3.3 A Fig. 1c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 1 V 0. µf 50 kω 0.3 µf Q GS Q GD D.U.T. V DS V G Charge Fig. 13a Basic Gate Charge Waveform 3 ma Fig. 13b Gate Charge Test Circuit I G I D Current sampling resistors www.vishay.com Document Number: 9103 6 S110510Rev. B, 1Mar11
Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period = a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. = 5 V for logic level devices Fig. 14 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?9103. Document Number: 9103 www.vishay.com S110510Rev. B, 1Mar11 7
www.vishay.com Package Information TO0AB D L H(1) Q L(1) 1 E 3 M * b(1) Ø P A F MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.5 4.65 0.167 0.183 b 0.69 1.01 0.07 0.040 b(1) 1.0 1.73 0.047 0.068 c 0.36 0.61 0.014 0.04 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e.41.67 0.095 0.105 e(1) 4.88 5.8 0.19 0.08 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.40 0.55 J(1).41.9 0.095 0.115 L 13.35 14.0 0.56 0.55 L(1) 3.3 3.8 0.131 0.150 Ø P 3.54 3.94 0.139 0.155 Q.60 3.00 0.10 0.118 ECN: X1008Rev. N, 08Oct1 DWG: 5471 e b C Notes * M = 1.3 mm to 1.6 mm (dimension including protrusion) Heatsink hole for HVM Xi an and Mingxin actual photo e(1) J(1) Revison: 08Oct1 1 Document Number: 71195 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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