The ZVS Class-D Amplifier, an egan FET-enabled Topology for Highly Resonant Wireless Power Transfer

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The egan FET Journey Continues The ZVS Class-D Amplifier, an egan FET-enabled Topology for Highly Resonant Wireless Power Transfer Efficient Power Conversion Corporation EPC - The Leader in egan FETs www.epc-co.com 1

Agenda Introduction to the A4WP Class-3 Specifications ZVS Class D Amplifier egan FET versus MOSFET Comparison Testing to the A4WP Class-3 Specifications Experimental Results Summary egan is a registered trademark of Efficient Power Conversion Corporation EPC - The Leader in egan FETs www.epc-co.com 2

Introduction Wireless power transfer solutions must address convenience-of-use such as: any device orientation, distance, multiple devices, simplicity, power. Only the Alliance for Wireless Power (A4WP / Rezence) standard does: Highly resonant (6.78 MHz ISM band) Loosely coupled coils Operation off-resonance ZVS Class D amplifier will be tested to the Class-3 requirements EPC - The Leader in egan FETs www.epc-co.com 3

Load Variation Arcs 1 +10j Ω On Resonance Matched Coil A4WP Class-3 Impedance Requirements 50 Ω Smith Chart 55 +10j Ω 55-150j Ω Increasing Inductance Full Load Arc Impedance Rotation permissible Unloaded Coil Arc 1-150j Ω Decreasing Capacitance EPC - The Leader in egan FETs www.epc-co.com 4

Coil Voltage [V] 140 120 100 80 60 40 20 0 800 ma Region Class-3 Coil Drive Requirements 0 10 20 30 40 50 60 Real Reflected Resistance [Ω] Vector sum of real (R) and imaginary (X) impedance range Power Limit 16 W 10j [Ω] 0j [Ω] 20j [Ω] 40j [Ω] 80j [Ω] 150j [Ω] Amplifier Limited EPC - The Leader in egan FETs www.epc-co.com 5

ZVS Class D Amplifier Switch voltage rating = Supply (V DD ). C OSS Voltage is transitioned by the ZVS tank ZVS tank circuit does not carry load current Coil Voltage = ( 2/π) V DD [V RMS ] + V DD Q 2 ZVS tank C s V / I V DD Q 1 L ZVS C ZVS Z load V DS I LZVS 50% EPC - The Leader in egan FETs www.epc-co.com 6 I D Ideal Waveforms time

Ultra High Frequency egan FETs Proven in various wireless power transfer amplifiers Low C ISS Low C OSS Zero Q RR Full dv/dt immunity Gate 2.05 x 0.85 mm Drain Substrate (Connect to Source on PWB) Solder side View Gate Return R DS(on) @5 V (mω) Q G @5 V Typ. (pc) Source Q GS Q GD Typ. Typ. (pc) (pc) R G Typ. (Ω) V th Typ. (V) Part Number Package (mm) V DS (V) V GS (V) Q RR (nc) I D (A) EPC8004 LGA 2.05x0.85 40 6 125 358 110 31 0.34 1.4 0 2.7 150 EPC8009 LGA 2.05x0.85 65 6 138 380 116 36 0.3 1.4 0 2.7 150 EPC8010 LGA 2.05x0.85 100 6 160 354 109 32 0.3 1.4 0 2.7 150 T J Max. ( C) EPC - The Leader in egan FETs www.epc-co.com 7

Wireless Power Transfer Figure of Merit Best-In-Class MOSFET comparison All topologies are ZVS: Q G Q GD C OSS is absorbed in matching but is important as it: Drives off resonance losses Determines design-ability Q RR ignored poorly defined, amplifier is soft switching, BUT, transition time < t RR : egan FET Q RR = 0 nc MOSFET 2 Q RR = 18.1 nc! WPT DS(on) 700 600 500 400 300 200 100 EPC - The Leader in egan FETs www.epc-co.com 8 0 ( Q Q Q ) FOM = R + G FoM WPT [nc mω] GD Q OSS 2.8x EPC8010 MOSFET 2 OSS 3.4x Q OSS

Experimental Amplifier Gate Driver LM5113 (5 V) egan FET EPC8010 125 mω MOSFET 2 105 mω Oscilloscope Probe Holder Load Connection ZVS Inductor L ZVS ZVS Capacitor C ZVS Load Connection EPC - The Leader in egan FETs www.epc-co.com 9

Efficiency [%] 96 94 92 90 88 86 84 82 80 Load Variation (Ω) Results Total Amplifier Efficiency 17 15 13 11 9 7 5 3 1 0 10 20 30 40 50 60 Real Reflected Resistance [Ω] EPC8010-30j Ω EPC8010 0j Ω EPC8010 +20j Ω MOSFET -30j Ω MOSFET 0j Ω MOSFET +20j Ω P out Output Power [W] EPC - The Leader in egan FETs www.epc-co.com 10

Power [W] Load Variation (jω) Results Total Amplifier Losses 3.5 3 30 % lower 2.5 2 1.5 1 20 % lower 0.5 5 % lower 0-30 -25-20 -15-10 -5 0 5 10 15 20 Imaginary Impedance [jω] EPC8010 10 Ω 7 W MOSFET 10 Ω 7 W EPC8010 36 Ω 16 W MOSFET 36 Ω 16 W EPC8010 55 Ω 16 W MOSFET 55 Ω 16 W EPC - The Leader in egan FETs www.epc-co.com 11

Summary egan FETs in a ZVS Class D amplifier were tested to the A4WP Class-3 specifications : egan FETs always yield higher efficiency than best-in-class MOSFETs Gate driver and egan FET temperature remain below 100 C egan FET s lower C OSS reduces the ZVS current needed, resulting in lower power dissipation for both FET and L ZVS egan FETs reduce board space by 40 % EPC - The Leader in egan FETs www.epc-co.com 12

Wireless Power Handbook Visit EPC s Booth #1405 to see several demonstrations in operation Handbook on wireless power that covers this work and much more available at Digikey EPC - The Leader in egan FETs www.epc-co.com 13

Thank You EPC - The Leader in egan FETs www.epc-co.com 14

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