Carl Zeiss NTS. AURIGA CrossBeam und EVO am MPA Stuttgart. Stefan Bueble

Carl Zeiss NTS AURIGA CrossBeam und EVO am MPA Stuttgart Stefan Bueble

Carl Zeiss SMT Enabling the Nano-Age World Feature Size Market Products >1m Human Life Style Classical Optics 1mm (1m/10 3 ) Ant (2 mm) 1µm (1m/10 6 ) Pollen (~50 µm) Hair (~50 µm) Biomedical Sciences and Health Care Optical Microscopy Carl Zeiss SMT 1nm (1m/10 9 ) 1 pm (1m/10 12 ) Flue virus (~100 nm) DNA (to 1nm) Mask (100 nm) Structured IC (<100 nm) Atom (to 0,1 nm) Bacteria (a few µm) Semiconductor Life Science Materials Analysis Biomedical Sciences Semiconductor Optical Litho AIMS Mask Repair/ CE SEM/CrossBeam He-Ion Microscopy TEM Page 2

Introduction: Product Portfolio FE SEM CrossBeam HIM LIBRA EFTEM With courtesy of AMD Saxony LLC & Co. KG Page 3

CrossBeam Product Line NVision 40 NEON 40 EsB Auriga Page 4

CrossBeam Series AURIGA TM Information Beyond Resolution AURIGA, The Charioteer Constellation in the Northern Hemisphere Located next to GEMINI constellation Page 5

CrossBeam Series AURIGA TM Information Beyond Resolution ZEISS next generation CrossBeam platform... AURIGA New concept New FIB column New multi-purpose chamber New GIS Proven ULTRAplus FE-SEM platform Page 6

AURIGA The next Generation Page 7

AURIGA The next Generation Modularity Options EsB - detector Charge Compensation FIB GIS» GIS integrated» UltraPlus-solution» Canion» Cobra» ZEISS GIS» MonoGIS Airlock» Zeiss airlock (80mm)» 100mm airlock Misc Ion detector, STEM, 4QBSD, SIMS, EDS, EBSD, Cryo, CL, micromanipulators Full analytical flexibility EDS: 3 ports Omniprobe lift-out system: 4 ports MonoGIS: Upper port, SIMS- & GIS-port SIMS 4 QBSD / STEM / Cryo / EBSD: 3 ports Several MP-ports for electrical or cryo feed-throughs Page 8

Electron Optics Page 9

Beam Sample Interaction Page 10

Beam Sample Interaction Influence of Beam Energy 5kV 1kV 10kV Monte Carlo simulation of the beam sample interaction for a Si sample at 1kV and 10kV. Page 12

Beam Sample Interaction Influence of Beam Energy Platinum Rhodium Alloy Crystals at 1kV (left) and at 20kV (right) Page 13

Electron Optics Operating principle of the Gemini column U Ex Beam path with no intermediate cross over Features Electromagnetic aperture changer Condenser lens U 0 highly stable thermal FEG < 0.5 % /h variation low beam noise < 1 % In-lens SE-detector Beam booster Magnetic lens Scan coils Electrostatic lens Specimen U L cross over free beam path no significant Boersch effect, high depth of field beam booster superb image resolution throughout the whole beam energy range, particularly down to 100 ev. High resistance to ambient magnetic stray fields Page 15

Electron Optics The Gemini principle Aberration Coefficients [mm] 25 20 15 10 5 Spherical Chromatic Magnetic lens 0 0 5 10 15 20 25 30 Beam Energy [KeV] Electrostatic lens Probe Size: d P d d d M d 2 2 2 2 S C d g Spherical aberration: 3 d 0.5 S C S Principle of the compound magnetic/electrostatic objective lens with its optical equivalence No Magnetic field at the sample!! Constant conditions@all kv! Chromatic aberration: Diffraction Error: d C C C 1 d d U U Page 16

Electron Optics NOTE: twin structures at 510 volts Page 17

Beam Sample Interaction SE BSE LLE AE 50eV 2keV E=E 0 Electron Energy Page 18

Gemini - CDS (Complete Detection System) EsB Inlens Magnetic lens Electrostatic lens AsB STEM Page 19

High resolution low voltage SE imaging Resist Structure on a Silicon Wafer, uncoated, 0.8kV Page 20

High resolution low voltage SE imaging Barley chromosome prepared by fixation, critical point drying, and immuno labeling of spindle apparatus. Sample courtesy of Prof. Wanner, MPI München Page 21

High resolution low voltage SE imaging Magnetic materials High resolution image of a TiN / YbN Multilayer on a magnetic steel substrate Page 22

Ultra low voltage imaging at 20 Volts Page 23

High resolution SE imaging This is not a Silicon (111) HR-TEM image! Uncoated PTFE (Teflon) macro molecules imaged by in-lens detector. Spacing between molecules is 20 Å. Page 24

Electron Optics Gemini with EsB A new detection principle for the GEMINI column Energy and angle selective BSE detection EsB Page 25

Electron Optics SE deflection by continuous variation of Filter Grid energy has no influence on the primary electrons Continuous mixing with any other detector is possible Page 27

Beam Sample Interaction SE BSE LLE AE 50eV 2keV E=E 0 Electron Energy Target is to separate both informations Page 28

High resolution low voltage BSE detection In-lens SE image Image taken from In-lens SE detector showing high degree of topographical information Page 29

High resolution low voltage BSE detection EsB Backscatter In-lens SE image image Page 30

High resolution low voltage SE detection W - plug Inlens image 1.2kV Page 31

High resolution low voltage BSE detection Poly Si TiN SiO Si W - plug Inlens backscatter image 1.2kV Page 32

4QBSD (AsB) Detector Gold particles AsB Image Page 35

Image analysis Applications (SE) R/W DVD surface @ 1.58 kv, WD 2mm In-lens SE Page 36

Image analysis Applications (BSD) R/W DVD surface @ 1.58 kv, WD 2mm EsB Page 37

Ion Detection 150 pa In-Lens FIB SE Image 150 pa Elion FIB SI Image Sample: Nickel based superalloy exhibiting intergranular corrosion secondary ion yields for most metals increase by ~ 10X to 1000X (typically ~ 50X) in the presence of electronegative species such as oxygen in particular. This makes secondary ion imaging very sensitive to the presence of corrosion, especially at grain boundaries, and makes detection of this corrosion very fast. This oxygen enhanced yield dominates other contrast mechanisms in ion imaging of metals Page 38

Automated Sample Preparation TEM sample fabricated completely unattended (time to sample: 30min) Page 40

CrossBeam TEM Sample Preparation Page 41

STEM Imaging STEM bright field image of a semiconductor Page 42

STEM Imaging Flash memory Bright field image Darkfield image Page 43

TEM Sample Preparation - STEM Imaging Page 44

STEM Imaging STEM images of a kidney cross section, bright-field mode. Page 45

STEM Imaging Inlens Image STEM Image Nanotubes in Gemini STEM - Nickel as catalyst in single wall nanotubes Page 46

STEM Imaging Nanotubes in Gemini STEM - Nickel as catalyst in single wall nanotubes Page 47

STEM Imaging Nanotubes in Gemini STEM Page 48

Ion Optics Ion Optics Page 49

The LMIS (Liquid Metal Ion Source) W Tip Taylor cone Extractor Ion Beam The LMIS usually consists of a blunt W field emitter with an end radius of about 10µm, which is coated with a metal having a high surface tension and a low vapour pressure at its melting point. The field emitter is heated to the melting point of the metal while a high positive voltage (3-10kV) is placed on it relative to the extraction electrode. The liquid metal is drawn into a conical shape by the balance between the electrostatic and surface tension forces. The apex of the liquid metal is drawn to an end radius of a few nm. Page 50

The LMIS (Liquid Metal Ion Source) SEM Micrograph of the liquid metal ion source (LMIS) showing a W needle and a spiral reservoir spot welded to a heating loop. The reservoir is about 3mm long and contains enough liquid Ga to last for about 1500h of operation at a total emission current of 1µA. Page 51

Gas Injection System Page 52

Working principle of the local charge compensator Page 53

Local Charge Compensator with 2 gases Dry Nitrogen for Charge compensation Ozone gas for sample surface cleaning After 10 min oxygen cleaning Applications generated by Jörg Stodolka Page 54

In-Situ cleaning while image acquisition Requirements: contamination predominant in chamber intensity of cleaning can be reduced as carbon generation is mitigated immediately 100nm In-Lens image of Au on C sample, deliberately contaminated prior to loading, image acquired without oxygen flow, 1kV, WD 5mm at 150 kx mag after 1min scanning at 600kX: contamination visible 100nm In-Lens image of same Au on C sample, now acquired with oxygen flow, 1kV, WD 5mm at 150 kx mag after 1min scanning at 600kX: no formation of contamination visible Page 55

Charge Compensation Careful EHT & pressure tuning visualizes the doping basins and diffusion barrier Page 56

Charge Compensation EDS Analysis Turbine Blades EDS Analysis at 15kV with charge compensation. Page 57

AURIGA The next Generation Charge compensation c) Analytics (e.g. EDS) Sample: ZrO2 EHT=15kV CC off CC on Cut-off at ~6.5kV Cut-off at ~14kV Surface charging shifts the cut-off voltage of bremsstrahlung ( Duane-Hunt limit ) down to ~6.5kV Also no detection of any characteristic X-rays for elemental analysis possible above this cut-off voltage CC on: No EDS restrictions Page 58

Cross Sections Cross Section of a Flash Memory (SEM image during polish) Page 59

Cross Sections AMD Opteron Processor (FIB image) With courtesy of AMD Saxony LLC & Co. KG Page 60

Cross Sections Semiconductors SEM image Page 61