Server Forum 2014. Copyright 2014 [JS Choi Samsung]

Agenda Memory Requirement How to Address What s 3DS It s IN PRODUCTION

DRAM Market & Application 47% of DRAM for Server and PC application Server (15%) Mainframe Supercomputer Server Workstation Desktop Notebook PC (32%) Mobile (25%) Tablet Smart Phone Cellular Phone Mini laptop EDP (Electronic Data Processing) Industrial 7% Military Consumer & Gfx (21%) TV/ LCD/ Printer Set-top box/ D.Camera Navigation/ Black Box Gfx card / Video Game Aerospace Home Appliance Source : Gartner( 14.1Q)

Server Application Trend Memory RAS and Low TCO are required for server Server Virtualization Moving to Cloud Big Data Source : Gartner( 14.1Q) Low TCO Enhanced RAS High Performance Operating voltage Stand-by power Core & I/O power Better S/I Reinforced resiliency High bandwidth Better efficiency

High Capacity High Performance/Watt High Reliability But Low Cost

4th Generation of DDR SDRAM Successor of DDR3 from 2014 supporting all Computing system 02 05 07. 14 GDDR GDDR2 GDDR3 GDDR4 GDDR5 C:\> PC66-133 DDR DDR2 DDR3 DDR4 MDDR MDDR2 LPDDR3 LPDDR4

TSV technology for 3DS Enables DRAM stacking with better electrical characteristics Conventional Stack Solutions <QDP Wire-bond Package> RDL* Wire-Bond TSV Solutions <4H TSV Package> Slave Chip Master Chip TSV VIA *RDL : Re-distribution Layer <QDP LRDIMM> <3DS TSV RDIMM> Memory Controller Data Buffer DRAM Memory Controller Integrated Buffer Less I/O power DRAM (Master) Number of loading limits high speed operations Only master chip communicates with controller regardless of number of stacking

3DS DDR4 Architecture Mater, sub-control of CA/CTL/Data

3DS DDR4 Architecture Micrograph of 3DS DDR4 SDRAM (a) Chip Micrograph (b) Vertical section (c) Shmoo

Check List for 3DS (1) Encoded Address : 1CS# + 2Chip ID Increase Max Density with Limited CS#

Check List for 3DS (2) Additional Latency for De-Skew PVT Better Matching with RDIMM rather than LRDIMM

Check List for 3DS (3) MR Setting only for Master All Logical Ranks enter Self Refresh / Power Down together Simpler Initialization / Power control

Check List for 3DS (4) Staggering Refresh only within Logical Ranks No Difference in Package Rank Interleaving

Tips to maximize 3DS performance Make Sure your controller support All-Ranks Interleaving Can Maximize Efficiency if you control PKG Ranks and Logical Ranks in the different way Use 3DS only at Same Channel Reduce Staggering Refresh Interval

Power Efficiency of 3DS Solution 3DS solution shows similar performance to buffered solutions Significant less power by removing additional ICs Performance & Latency Power Consumption 1 0.99 1.03 ~24% ~28% 1 1 0.96 1 0.81 1.04 DDP LR 4H TSV 3DS 4H TSV_LR 3DS 32GB LRDIMM 64GB RDIMM 64GB LRDIMM DDP DDP LRDIMM TSV 4H RDIMM 3DS TSV 4H LRDIMM 3DS 32GB LRDIMM 64GB RDIMM 64GB LRDIMM Performance Latency 3DS RDIMM performs the same as buffered solutions 4H 3DS DRAM consumes same as conventional 2stack *Performance: SPECjbb benchmark, Latency: ATE, Power: Samsung memory stress PGM @ system

Performance Benchmark 3DS RDIMM shows better overall performance 3DS RDIMM shows best performance with 2DPC (less idle time from large number of ranks) 3DS RDIMM 1DPC performance is similar to DDP LRDIMM (larger idle time from more refresh) 70.0 Lmbench Lower the better(latency) 58000 Stream Higher the better(b/w) 65.0 60.0 56000 55.0 54000 50.0 45.0 40.0 Lmbench 52000 50000 Stream 35.0 48000 30.0 DDP LRDIMM 3DS RDIMM DDP LRDIMM 3DS RDIMM 46000 DDP LRDIMM 3DS RDIMM DDP LRDIMM 3DS RDIMM 1DPC 2DPC 1DPC 2DPC 210 SPECcpu Higher the better(performance) 33400 SPECjbb max-jops Higher the better(performance) 205 33200 200 33000 195 32800 190 185 180 SPECcpu 32600 32400 SPECjbb max-jops 175 32200 170 DDP LRDIMM 3DS RDIMM DDP LRDIMM 3DS RDIMM 1DPC 2DPC 32000 DDP LRDIMM 3DS RDIMM DDP LRDIMM 3DS RDIMM 1DPC 2DPC

Unveiled 1st TSV product, 64GB RDIMM 64GB RDIMM with TSV is IN PRODUCTION

Infrastructure Readiness for HBM 300mm wafer process line is ready for Mass Production Fab process qualification is completed with State of the art facilities FAB Post-FAB Assembly TSV Bump Carrier Bond Back-side Pad Debond & Saw Stacking Chip on wafer Chip on PCB

Samsung Memory for All Computing Device