2N2219A 2N2222A DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. ABSOLUTE MAXIMUM RATINGS HIGH SPEED SITCHES PRELIMINARY DATA INTERNAL SCHEMATIC DIAGRAM Symbol Parameter alue Unit CBO Collector-Base oltage (IE = 0) 75 CEO Collector-Emitter oltage (IB = 0) 40 EBO Emitter-Base oltage (I C = 0) 6 I C Collector Current 0.6 A I CM Collector Peak Current (t p < 5 ms) 0.8 A P tot Total Dissipation at T amb 25 o C for 2N2219A for 2N2222A at TC 25 o C for 2N2219A for 2N2222A TO-18 T stg Storage Temperature -65 to 175 T j Max. Operating Junction Temperature 175 0.8 0.5 3 1.8 TO-39 o C o C February 2003 1/7
THERMAL DATA TO-39 TO-18 R thj-case Rthj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 50 187.5 83.3 300 o C/ o C/ ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO I CEX IBEX I EBO (BR)CBO (BR)CEO (BR)EBO CE(sat) BE(sat) Collector Cut-off Current (I E = 0) Collector Cut-off Current ( BE = -3) Base Cut-off Current ( BE = -3) Emitter Cut-off Current (IC = 0) Collector-Base Breakdown oltage (I E = 0) Collector-Emitter Breakdown oltage (I B = 0) Emitter-Base Breakdown oltage (IC = 0) Collector-Emitter Saturation oltage CB = 60 CB = 60 T j = 150 o C CE = 60 10 na CE = 60 20 na EB = 3 10 na I C = 10 µa 75 I C = 10 ma 40 I E = 10 µa 6 I C = 150 ma I C = 500 ma I B = 15 ma I B = 50 ma Base-Emitter IC = 150 ma IB = 15 ma Saturation oltage I C = 500 ma I B = 50 ma h FE DC Current Gain I C = 0.1 ma CE = 10 I C = 1 ma CE = 10 I C = 150 ma CE = 10 IC = 500 ma CE = 10 I C = 150 ma CE = 1 T amb = -55 o C h fe 10 10 0.3 1 0.6 1.2 2 Small Signal Current I C = 1 ma CE = 10 f = 1KHz 50 300 Gain f = 1KHz 75 375 f T Transition Frequency I C = 20 ma CE = 20 300 MHz f = 100 MHz C EBO Emitter-Base I C = 0 EB = 0.5 f = 100KHz 25 pf Capacitance C CBO Collector-Base I E = 0 CB = 10 f = 100 KHz 8 pf Capacitance R e(hie) Real Part of Input I C = 20 ma CE = 20 60 Ω Impedance f = 300MHz * Pulsed: Pulse duration = 300 µs, duty cycle 1 % 35 50 75 100 40 50 35 300 na µa 2/7
ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit NF Noise Figure I C = 0.1 ma CE = 10 4 db f = 1KHz R g = 1KΩ hie Input Impedance IC = 1 ma CE = 10 h re Reverse oltage Ratio I C = 1 ma CE = 10 h oe Output Admittance I C = 1 ma CE = 10 t d Delay Time CC = 30 I C = 150 ma I B1 = 15 ma BB = -0.5 tr Rise Time CC = 30 IC = 150 ma I B1 = 15 ma BB = -0.5 ts Storage Time CC = 30 IC = 150 ma I B1 = -I B2 = 15 ma tf Fall Time CC = 30 IC = 150 ma I B1 = -I B2 = 15 ma r bb C b c Feedback Time I C = 20 ma CE = 20 Constant f = 31.8MHz Pulsed: Pulse duration = 300 µs, duty cycle 1 % See test circuit 2 0.25 5 25 8 1.25 8 4 35 200 kω kω 10-4 10-4 µs µs 10 ns 25 ns 225 ns 60 ns 150 ps 3/7
Test Circuit fot t d, t r. Test Circuit fot t d, t r. PULSE GENERATOR : tr 20 ns P 200 ns Z IN = 50 Ω TO OSCILLOSCOPE tr 5.0 ns ZIN < 100 KΩ C IN 12 pf PULSE GENERATOR : TO OSCILLOSCOPE : P 10 µs t r < 5.0 ns ZIN = 50 Ω ZIN > 100 KΩ TC 5.0 ns CIN 12 pf 4/7
TO-18 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 12.7 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45 o 45 o I G H D A F E L C B 0016043 5/7
TO-39 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 12.7 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 L I G 45 o (typ.) H D A F E L B P008B 6/7
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