TA = 25 C unless otherwise noted. Symbol Parameter Value Units



Similar documents
TO-92 SOT-23 Mark: 3E. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438

BDX33/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C

Si9953DY* Dual P-Channel Enhancement Mode MOSFET 9 '66 'UDLQ6RXUFHÃ9ROWDJH 9 9 *66 *DWH6RXUFHÃ9ROWDJH ± 9 Ã3XOVHG 3 '

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units

BUZ11. 30A, 50V, Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, Ohm, N- Channel. Ordering Information

Features S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8

IRF A, 100V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

IRF640, RF1S640, RF1S640SM

IRF840. 8A, 500V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

Features. TA=25 o C unless otherwise noted

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

QFET TM FQP50N06. Features. TO-220 FQP Series

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV.

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features.

BC327, BC327-16, BC327-25, BC Amplifier Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

74VHC112 Dual J-K Flip-Flops with Preset and Clear

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

40 V, 200 ma NPN switching transistor

CD4040BC, 12-Stage Ripple Carry Binary Counters CD4060BC, 14-Stage Ripple Carry Binary Counters

45 V, 100 ma NPN/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to C

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

BC807; BC807W; BC327

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

2PD601ARL; 2PD601ASL

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description

TIP31, TIP32 High Power Bipolar Transistor

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.

DISCRETE SEMICONDUCTORS DATA SHEET

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch

Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C

AT Up to 6 GHz Low Noise Silicon Bipolar Transistor

1N5401-1N5408 General-Purpose Rectifiers

PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291

MBR20200CT Dual High Voltage Schottky Rectifier

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor

Silicon NPN Phototransistor

BD135 - BD136 BD139 - BD140

Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR

74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger

PHOTOTRANSISTOR OPTOCOUPLERS

FMBS2383 NPN Epitaxial Silicon Transistor

45 V, 100 ma NPN general-purpose transistors

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383

TO-92 SOT-23 Mark: 3G. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

NPN wideband transistor in a SOT89 plastic package.

P6KE6V8(C)A - P6KE440(C)A 600 W Transient Voltage Suppressors

S1A - S1M General Purpose Rectifiers

BC107/ BC108/ BC109 Low Power Bipolar Transistors

ST High voltage fast-switching NPN power transistor. Features. Applications. Description

QRE1113, QRE1113GR Minature Reflective Object Sensor

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors

NPN wideband silicon germanium RF transistor

EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.

RS1A - RS1M Fast Rectifiers

FGH40N60UFD 600 V, 40 A Field Stop IGBT

BC517 NPN Darlington Transistor

RFP30N06LE, RF1S30N06LESM

P D Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

NPN wideband silicon RF transistor

BUX48 High Power Bipolar Transistor

Transcription:

Discrete POWER & Signal Technologies C B E TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units V CEO Collector-Emitter Voltage 25 V V CBO Collector-Base Voltage 25 V V EBO Emitter-Base Voltage 12 V I C Collector Current - Continuous 1.2 A T J, T stg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25 C unless otherwise noted Symbol Characteristic Max Units P D Total Device Dissipation Derate above 25 C 625 5.0 mw mw/ C R θjc Thermal Resistance, Junction to Case 83.3 C/W RθJA Thermal Resistance, Junction to Ambient 200 C/W 1997 Fairchild Semiconductor Corporation

Electrical Characteristics TA = 25 C unless otherwise noted NPN Darlington Transistor (continued) Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V (BR)CEO Collector-Emitter Breakdown Voltage* I C =10 ma, I B = 0 25 V V (BR)CBO Collector-Base Breakdown Voltage I C = 0.1 µa, I E = 0 25 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 0.1 µa, I C = 0 12 V I CBO Collector Cutoff Current V CB = 25 V, I E = 0 0.1 µa V CB = 25 V, I E = 0, T A = 100 C 20 µa I EBO Emitter Cutoff Current V EB = 12 V, I C = 0 0.1 µa ON CHARACTERISTICS* h FE DC Current Gain V CE = 5.0 V, I C = 2.0 ma 7,000 70,000 V CE = 5.0 V, I C = 100 ma 20,000 V CE(sat) Collector-Emitter Saturation Voltage I C = 200 ma, I B = 0.2 ma 1.4 V V BE(sat) Base-Emitter Saturation Voltage I C = 200 ma, I B = 0.2 ma 1.6 V V BE(on) Base-Emitter On Voltage I C = 200 ma, V CE = 5.0 V 1.5 V SMALL SIGNAL CHARACTERISTICS C cb Collector-Base Capacitance V CB = 10 V, f = 1.0 MHz 10 pf hfe Small-Signal Current Gain I C =2.0 ma, V CE = 5.0 V, f = 1.0 khz I C =2.0 ma, V CE = 5.0 V, f = 10 MHz *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% 7,000 6.0

TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 FSCINT sample FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B LOT: CBVK741B019 QTY: 10000 TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles NSID: PN2222N SPEC: D/C1: D9842 SPEC REV: B2 FSCINT QA REV: (FSCINT) F63TNR sample LOT: CBVK741B019 QTY: 2000 FSID: PN222N SPEC: D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN: N/F: F (F63TNR)3 5 Reels per F63TNR 375mm x 267mm x 375mm TO-92 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A 2,000 D26Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units 327mm x 158mm x 135mm Immediate Box 5 Ammo boxes per F63TNR 333mm x 231mm x 183mm FSCINT (TO-92) BULK PACKING INFORMATION EOL CODE DESCRIPTION LEADCLIP DIMENSION QUANTITY J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX NO EOL CODE L34Z TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 NO LEADCLIP NO LEADCLIP 2.0 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table FSCINT 2000 units per EO70 box for std option Anti-static Bubble Sheets 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box FSCINT 10,000 units maximum per intermediate box for std option 2001 Fairchild Semiconductor Corporation March 2001, Rev. B1

TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option A (H) Machine Option E (J) Style A, D26Z, D70Z (s/h) Style E, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B

TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 P Pd Hd b Ha H1 HO L1 d L S W1 WO W2 t W t1 P1 F1 P2 DO ITEM DESCRIPTION SYMBOL DIMENSION PO Base of Package to Lead Bend b 0.098 (max) User Direction of Feed Component Height Lead Clinch Height Ha HO 0.928 (+/- 0.025) 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.040 (max) Component Alignment ( front/back ) Hd 0.031 (max) Component Pitch P 0.500 (+/- 0.020) Feed Hole Pitch PO 0.500 (+/- 0.008) Hole Center to First Lead P1 0.150 (+0.009, -0.010) Hole Center to Component Center P2 0.247 (+/- 0.007) Lead Spread F1/F2 0.104 (+/- 0.010) Lead Thickness d 0.018 (+0.002, -0.003) Cut Lead Length L 0.429 (max) Taped Lead Length L1 0.209 (+0.051, -0.052) Taped Lead Thickness t 0.032 (+/- 0.006) Carrier Tape Thickness t1 0.021 (+/- 0.006) TO-92 Reel Configuration: Figure 5.0 Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position W WO W1 W2 0.708 (+0.020, -0.019) 0.236 (+/- 0.012) 0.035 (max) 0.360 (+/- 0.025) Sprocket Hole Diameter DO 0.157 (+0.008, -0.007) Lead Spring Out S 0.004 (max) Note : All dimensions are in inches. ELECTROSTATIC SENSITIVE DEVICES D4 D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR D2 Reel Diameter D1 13.975 14.025 Arbor Hole Diameter (Standard) D2 1.160 1.200 (Small Hole) D2 0.650 0.700 Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 W2 W1 W3 Flange to Flange Inner Width W2 1.630 1.690 Hub to Hub Center Width W3 2.090 Note: All dimensions are inches D3 July 1999, Rev. A

TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 2000 Fairchild Semiconductor International January 2000, Rev. B

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E 2 CMOS TM EnSigna TM FACT FACT Quiet Series FAST DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G