Type BSC28N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications Product Summary V DS 6 V R DS(on),max 2.8 mw I D A Q oss 43 nc Q G (..V) 37 nc Pb-free lead plating; RoHS compliant Halogen-free according to IEC6249-2-2 PG-TDSON-8 Type Package Marking BSC28N6NS PG-TDSON-8 28N6NS Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS = V, T C =25 C A V GS = V, T C = C 83 V GS = V, T C =25 C, R thja =5K/W 2) 23 Pulsed drain current 3) I D,pulse T C =25 C 4 Avalanche energy, single pulse 4) E AS I D =5 A, R GS =25 W mj Gate source voltage V GS ±2 V ) J-STD2 and JESD22 2) Device on 4 mm x 4 mm x.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 3 for more detailed information Rev.2. page 23--8
BSC28N6NS Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Power dissipation P tot T C =25 C 83 W T A =25 C, R thja =5 K/W 3) 2.5 Operating and storage temperature T j, T stg -55... 5 C IEC climatic category; DIN IEC 68-55/5/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc bottom - -.5 K/W top - - 2 Device on PCB R thja 6 cm 2 cooling area 2) - - 5 Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D = ma 6 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =5 µa 2. 2.8 3.3 Zero gate voltage drain current I DSS V DS =6 V, V GS = V, T j =25 C V DS =6 V, V GS = V, T j =25 C -.5 µa - Gate-source leakage current I GSS V GS =2 V, V DS = V - na Drain-source on-state resistance R DS(on) V GS = V, I D =5 A - 2.5 2.8 mw V GS =6 V, I D =2.5 A - 3.4 4.2 Gate resistance R G -.3.95 W Transconductance g fs V DS >2 I D R DS(on)max, I D =5 A 5 - S Rev.2. page 2 23--8
BSC28N6NS Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss 225 27 3375 pf Output capacitance C oss V GS = V, V DS =3 V, f = MHz 495 66 825 Reverse transfer capacitance C rss 8.5 28 56 Turn-on delay time t d(on) - 22 ns Rise time t r V DD =3 V, V GS = V, - 38 57 Turn-off delay time t d(off) I D =5 A, R G,ext =3 W - 9 38 Fall time t f - 8 6 Gate Charge Characteristics 5) Gate to source charge Q gs 9 2 6.5 nc Gate charge at threshold Q g(th) 6 8 Gate to drain charge Q gd V DD =3 V, I D =5 A, 5 7.3 Switching charge Q sw V GS = to V 8 2 7 Gate charge total Q g 3 37 49 Gate plateau voltage V plateau 4. 4.6 5.2 V Gate charge total, sync. FET Q g(sync) V DS =. V, V GS = to V 27 33 43 nc Output charge Q oss V DD =3 V, V GS = V 32 43 54 Reverse Diode Diode continuous forward current I S T C =25 C - - A Diode pulse current I S,pulse - - 4 Diode forward voltage V SD V GS = V, I F =5 A, T j =25 C -.9.2 V Reverse recovery time t rr V R =3 V, I F =5 A, 4 35 56 ns Reverse recovery charge Q rr di F /dt = A/µs 4 29 58 nc 5) See figure 6 for gate charge parameter definition Rev.2. page 3 23--8
I D [A] Z thjc [K/W] P tot [W] I D [A] BSC28N6NS Power dissipation 2 Drain current P tot =f(t C ) I D =f(t C ); V GS V 2 8 8 6 6 4 4 2 2 25 5 75 25 5 75 25 5 75 25 5 75 T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =25 C; D = Z thjc =f(t p ) parameter: t p parameter: D =t p /T 3 limited by on-state resistance µs 2 µs.5 µs.2. ms ms..5 DC.2.. single pulse - - 2 V DS [V]....... t p [s] Rev.2. page 4 23--8
I D [A] g fs [S] I D [A] R DS(on) [mw] 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C BSC28N6NS parameter: V GS 4 parameter: V GS 8 36 V 7 V 7 5 V 5.5 V 6 V 32 28 6 24 6 V 5 2 4 6 5.5 V 3 7 V 2 8 5 V 2 V 4..5..5 2. V DS [V] 5 5 2 25 3 35 4 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C parameter: T j 4 6 36 32 28 2 24 2 8 6 2 8 4 4 5 C 25 C 2 4 6 8 2 4 6 8 V GS [V] I D [A] Rev.2. page 5 23--8
C [pf] R DS(on) [mw] V GS(th) [V] I F [A] BSC28N6NS 9 Drain-source on-state resistance Typ. gate threshold voltage R DS(on) =f(t j ); I D =5 A; V GS = V V GS(th) =f(t j ); V GS =V DS 6 5 5.5 5 4.5 4 4 3.5 max 3 5 μa 3 2.5 typ 2 5 µa 2.5.5-6 -2 2 6 4 8 T j [ C] -6-2 2 6 4 8 T j [ C] Typ. capacitances 2 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f = MHz I F =f(v SD ) parameter: T j 4 3 Ciss 3 2 Coss 25 C 2 5 C Crss 2 4 6.5.5 V DS [V] V SD [V] Rev.2. page 6 23--8
V BR(DSS) [V] I AV [A] V GS [V] BSC28N6NS 3 Avalanche characteristics 4 Typ. gate charge I AS =f(t AV ); R GS =25 W parameter: T j(start) V GS =f(q gate ); I D =5 A pulsed parameter: V DD 2 3 V 25 C C 25 C 2 V 48 V 8 6 4 2. 2 3 4 t AV [µs] Q gate [nc] 5 Drain-source breakdown voltage 6 Gate charge waveforms V BR(DSS) =f(t j ); I D = ma 7 V GS Q g 66 62 58 V gs(th) 54 Q g(th) Q sw Q gate 5-6 -2 2 6 4 8 T j [ C] Q gs Q gd Rev.2. page 7 23--8
BSC28N6NS PG-TDSON-8 (SuperSO8) Rev.2. page 8 23--8
BSC28N6NS Published by Infineon Technologies AG 8726 Munich, Germany 23 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2. page 9 23--8