OptiMOS Power-Transistor Product Summary V DS 55 V R DS(on),max 4) 35 mω Features Dual N-channel Logic Level - Enhancement mode AEC Q11 qualified I D 2 A PG-TDSON-8-4 MSL1 up to 26 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 1% Avalanche tested Type Package Marking IPG2N6S2L-35 PG-TDSON-8-4 2N6L35 Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current one channel active 2) I D T C =25 C, V GS =1 V 1) 2 A T C =1 C, V GS =1 V 2 Pulsed drain current 2) one channel active I D,pulse - 8 Avalanche energy, single pulse 2, 4) E AS I D =1A 1 mj Avalanche current, single pulse 4) I AS - 15 A Gate source voltage V GS - ±2 V Power dissipation one channel active P tot T C =25 C 65 W Operating and storage temperature T j, T stg - -55... +175 C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1. page 1 29-9-7
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thjc - - - 2.3 K/W SMD version, device on PCB R thja minimal footprint - 1-6 cm 2 cooling area 3) - 6 - Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D = 1 ma 55 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =27 µa 1.2 1.6 2. Zero gate voltage drain current 4) I DSS V DS =55 V, V GS = V, T j =25 C -.1 1 µa V DS =55 V, V GS = V, T j =125 C 2) - 1 1 Gate-source leakage current 4) I GSS V GS =2 V, V DS = V - 1 1 na Drain-source on-state resistance 4) R DS(on) V GS =4.5 V, I D =1A - 35 44 mω V GS =1 V, I D =15A - 28 35 Rev. 1. page 2 29-9-7
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics 2) Input capacitance 4) C iss - 61 79 pf Output capacitance 4) C oss V GS = V, V DS =25 V, f =1 MHz - 18 23 Reverse transfer capacitance 4) C rss - 65 1 Turn-on delay time t d(on) - 3 - ns Rise time t r V DD =27.5 V, V GS =1 V, I D =2 A, - 5 - Turn-off delay time t d(off) R G =11 Ω - 25 - Fall time t f - 15-2, 4) Gate Charge Characteristics Gate to source charge Q gs - 2 2.6 nc Gate to drain charge Q gd V DD =44 V, I D =2 A, - 6.5 1 Gate charge total Q g V GS = to 1 V - 18 23 Gate plateau voltage V plateau - 3.5 - V Reverse Diode Diode continous forward current 2) one channel active Diode pulse current 2) one channel active I S - - 2 A T C =25 C I S,pulse - - 8 Diode forward voltage V SD V GS = V, I F =15 A, T j =25 C Reverse recovery time 2) t rr V R =27.5 V, I F =I S, di F /dt =1 A/µs - 1. 1.3 V - 4 - ns Reverse recovery charge 2, 4) Q rr - 4 - nc 1) Current is limited by bondwire; with an R thjc =2.3 K/W the chip is able to carry 3.4A at 25 C. 2) Specified by design. Not subject to production test. 3) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Per channel Rev. 1. page 3 29-9-7
1 Power dissipation 2 Drain current P tot = f(t C ); V GS 6 V; one channel active I D = f(t C ); V GS 6 V; one channel active 7 25 6 2 5 P tot [W] 4 3 15 1 2 1 5 5 1 15 2 5 1 15 2 T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =25 C; D =; one channel active Z thjc = f(t p ) parameter: t p parameter: D =t p /T 1 1 µs 1 1 1 µs 1 µs 1.5 1 1 ms Z thjc [K/W] 1-1.1.5.1 single pulse 1 1 1 1 1-2 1-6 1-5 1-4 1-3 1-2 1-1 1 V DS [V] t p [s] Rev. 1. page 4 29-9-7
5 Typ. output characteristics 4) 6 Typ. drain-source on-state resistance 4) I D = f(v DS ); T j = 25 C R DS(on) = f(i D ); T j = 25 C parameter: V GS parameter: V GS 8 1 V 5 V 1 3 V 3.5 V 4 V 4.5 V 6 4.5 V 8 4 4 V R DS(on) [mω] 6 2 3.5 V 4 5 V 3 V 1 V 1 2 3 4 5 V DS [V] 2 2 4 6 8 7 Typ. transfer characteristics 4) 8 Typ. drain-source on-state resistance 4) I D = f(v GS ); V DS = 6V R DS(on) = f(t j ); I D = 15 A; V GS = 1 V parameter: T j 8-55 C 25 C 6 6 175 C 5 4 R DS(on) [mω] 4 3 2 2 1 2 3 4 5 6 V GS [V] 1-6 -2 2 6 1 14 18 T j [ C] Rev. 1. page 5 29-9-7
9 Typ. gate threshold voltage 1 Typ. Capacitances 4) V GS(th) = f(t j ); V GS = V DS C = f(v DS ); V GS = V; f = 1 MHz parameter: I D 2.5 1 4 2 V GS(th) [V] 1.5 1 27µA 27µA C [pf] 1 3 Ciss Coss 1 2 Crss.5-6 -2 2 6 1 14 18 T j [ C] 1 1 5 1 15 2 25 3 V DS [V] 11 Typical forward diode characteristicis 4) 12 Avalanche characteristics 4) IF = f(v SD ) I A S = f(t AV ) parameter: T j 1 2 parameter: T j(start) 1 1 25 C 1 C I F [A] 1 1 I AV [A] 15 C 175 C 25 C 1 1.2.4.6.8 1 1.2 1.4 V SD [V].1 1 1 1 1 t AV [µs] Rev. 1. page 6 29-9-7
13 Avalanche energy 4) 14 Drain-source breakdown voltage E AS = f(t j ) V BR(DSS) = f(t j ); I D = 1 ma parameter: I D 25 65 2 5 A 62 E AS [mj] 15 1 1 A V BR(DSS) [V] 59 56 5 15 A 53 25 5 75 1 125 15 175 T j [ C] 5-6 -2 2 6 1 14 18 T j [ C] 15 Typ. gate charge 4) 16 Gate charge waveforms V GS = f(q gate ); I D = 2 A pulsed parameter: V DD 12 V GS 1 11 V 44 V Q g 8 V GS [V] 6 4 V gs(th) 2 Q g(th) Q sw Q gate 5 1 15 2 Q gate [nc] Q gs Q gd Rev. 1. page 7 29-9-7
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Revision History Version Date Changes Revision 1. 7.9.29 Final Data Sheet Rev. 1. page 9 29-9-7