PD 967 IRFB465PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S V DSS HEXFET Power MOSFET 5V R DS(on) typ. 32m: max. 39m: 35A I D Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability l LeadFree TO22AB IRFB465PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 35 I D @ T C = C Continuous Drain Current, V GS @ V 25 A I DM Pulsed Drain Current c 4 P D @T C = 25 C Maximum Power Dissipation 44 W Linear Derating Factor.96 W/ C V GS GatetoSource Voltage ± 2 V dv/dt Peak Diode Recovery e 38 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds 3 C (.6mm from case) Mounting torque, 632 or M3 screw lbxin (.Nxm) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy d 9 mj I AR Avalanche Current c See Fig. 4, 5, 22a, 22b, A E AR Repetitive Avalanche Energy f mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc JunctiontoCase j.45 R θcs CasetoSink, Flat, Greased Surface.5 R θja JunctiontoAmbient (PCB Mount) ij 62 www.irf.com C/W 9/5/8
IRFB465PbF Static @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 5 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 9 V/ C R DS(on) Static DraintoSource OnResistance 32 39 mω V GS(th) Gate Threshold Voltage 3. 5. V I DSS DraintoSource Leakage Current 2 25 I GSS GatetoSource Forward Leakage GatetoSource Reverse Leakage R G(int) Internal Gate Resistance 2.7 Ω Dynamic @ (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 35 S V DS = 5V, I D = 2A Q g Total Gate Charge 26 I D = 2A Q gs GatetoSource Charge 8.6 Q gd GatetoDrain ("Miller") Charge 9. Q sync Total Gate Charge Sync. (Q g Q gd ) 7 t d(on) TurnOn Delay Time 5 t r Rise Time 35 t d(off) TurnOff Delay Time 25 t f Fall Time 2 C iss Input Capacitance 75 C oss Output Capacitance 55 C rss Reverse Transfer Capacitance 4 C oss eff. (ER) Effective Output Capacitance (Energy Related)h 79 C oss eff. (TR) Effective Output Capacitance (Time Related)g 382 Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions V GS = V, I D = 25µA Reference to 25 C, I D = 5mAc V GS = V, I D = 2A f V DS = V GS, I D = µa V DS = 5V, V GS = V V DS = 5V, V GS = V, T J = 25 C V GS = 2V V GS = 2V V DS = 75V V GS = V f I D = 2A, V DS =V, V GS = V V DD = 98V I D = 2A R G = 7.3Ω V GS = V f V GS = V V DS = 5V ƒ =.MHz (See Fig.5) V GS = V, V DS = V to 2V h(see Fig.) V GS = V, V DS = V to 2V g Conditions I S Continuous Source Current MOSFET symbol D 35 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 4 S (Body Diode)c pn junction diode. V SD Diode Forward Voltage.3 V, I S = 2A, V GS = V f t rr Reverse Recovery Time 7 V R = V, ns 83 T J = 25 C I F = 2A Q rr Reverse Recovery Charge 77 di/dt = A/µs f nc 247 T J = 25 C I RRM Reverse Recovery Current 4.9 A t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by LSLD) µa na nc ns pf Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L =.5mH R G = 25Ω, I AS = 2A, V GS =V. Part not recommended for use above this value. ƒ I SD 2A, di/dt 549A/µs, V DD V (BR)DSS, T J 75 C. Pulse width 4µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. When mounted on " square PCB (FR4 or G Material). For recom mended footprint and soldering techniques refer to application note #AN994 ˆ R θ is measured at T J approximately 9 C 2 www.irf.com
C, Capacitance (pf) V GS, GatetoSource Voltage (V) I D, DraintoSource Current (A) R DS(on), DraintoSource On Resistance (Normalized) I D, DraintoSource Current (A) I D, DraintoSource Current (A) IRFB465PbF VGS TOP 5V 2V V 8.V 7.V 6.V 5.5V BOTTOM 5.V VGS TOP 5V 2V V 8.V 7.V 6.V 5.5V BOTTOM 5.V 5.V 5.V 6µs PULSE WIDTH Tj = 25 C. V DS, DraintoSource Voltage (V) 6µs PULSE WIDTH Tj = 75 C V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 75 C 3. 2.5 I D = 2A V GS = V 2..5 V DS = 5V 6µs PULSE WIDTH 2 4 6 8 2 4 6 V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics..5 6 4 2 2 4 6 8 2468 T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 4. 2.. I D = 2A V DS = 2V V DS = 75V VDS= 3V C iss C oss 8. 6. C rss 4. 2.. 5 5 2 25 3 35 V DS, DraintoSource Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. DraintoSource Voltage Fig 6. Typical Gate Charge vs. GatetoSource Voltage www.irf.com 3
Energy (µj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) DraintoSource Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, DraintoSource Current (A) IRFB465PbF OPERATION IN THIS AREA LIMITED BY R DS (on) msec µsec T J = 75 C msec V GS = V..2.4.6.8..2.4.6 V SD, SourcetoDrain Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage 4 35 3 25 2 Tc = 25 C Tj = 75 C Single Pulse DC V DS, DraintoSource Voltage (V) 9 85 8 75 7 65 Fig 8. Maximum Safe Operating Area Id = 5mA 5 3. 2.5 2..5 5 25 5 75 25 5 75 T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature 6 55 5 45 4 6 4 2 2 4 6 8 2468 T J, Temperature ( C ) 5 45 4 35 3 25 Fig. DraintoSource Breakdown Voltage I D TOP 2.8A 5.3A BOTTOM 2A. 2 5.5 5. 2 2 4 6 8 2 4 6 25 5 75 25 5 75 V Starting T J, Junction Temperature ( C) DS, DraintoSource Voltage (V) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. DrainCurrent 4 www.irf.com
E AR, Avalanche Energy (mj) Avalanche Current (A) IRFB465PbF Thermal Response ( Z thjc ) C/W D =.5..2..5.2. SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R 4.2324.8.2588.547 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc. E6 E5... t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, JunctiontoCase τ 4 τ 4 τ C τ.2622.6.52.5 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse)..5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τ j = 25 C and Tstart = 5 C..E6.E5.E4.E3.E2.E tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth 2 8 6 4 2 TOP Single Pulse BOTTOM.% Duty Cycle I D = 2A Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN5 at www.irf.com). Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) 25 5 75 25 5 75 Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av www.irf.com 5
Q RR (A) I RR (A) Q RR (A) V GS(th), Gate threshold Voltage (V) I RR (A) IRFB465PbF 6. 5.5 5. 4.5 4. 3 25 2 I F = 4A V R = V T J = 25 C 3.5 3. 2.5 2..5 I D = µa I D = 25uA ID =.ma ID =.A 5 5. 75 5 25 25 5 75 25 5 75 T J, Temperature ( C ) Fig 6. Threshold Voltage vs. Temperature 2 4 6 8 di F /dt (A/µs) Fig. 7 Typical Recovery Current vs. di f /dt 35 3 25 I F = 2A V R = V T J = 25 C 8 7 6 I F = 4A V R = V T J = 25 C 2 5 5 5 2 4 6 8 di F /dt (A/µs) Fig. 8 Typical Recovery Current vs. di f /dt 4 3 2 2 4 6 8 di F /dt (A/µs) Fig. 9 Typical Stored Charge vs. di f /dt 9 8 7 I F = 2A V R = V T J = 25 C 6 5 4 3 2 2 4 6 8 di F /dt (A/µs) Fig. 2 Typical Stored Charge vs. di f /dt 6 www.irf.com
IRFB465PbF D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD ReApplied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for NChannel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G V DD VV GS Pulse Width µs Duty Factor % % V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 5KΩ Vgs 2V.2µF.3µF V GS D.U.T. V DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform www.irf.com 7
IRFB465PbF TO22AB Package Outline Dimensions are shown in millimeters (inches) TO22AB Part Marking Information (;$3/( 7,6,6$,5) /27&2'( $66(%/('2::,7($66(%/</,(& RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$578%(5 '$7(&2'( <($5 :((. /,(& TO22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 25275 TAC Fax: (3) 252793 Visit us at www.irf.com for sales contact information. 9/28 8 www.irf.com