Smar ighside Power Swich Feaures oad dump and reverse baery proecion 1) Clamp of negaive volage a oupu Shor-circui proecion Curren limiaion Thermal shudown Diagnosic feedback Open load deecion in ON-sae CMOS compaible inpu Elecrosaic discharge (ESD) proecion oss of ground and loss of bb proecion 2) Overvolage proecion Undervolage and overvolage shudown wih auoresar and hyseresis Applicaion µc compaible power swich wih diagnosic feedback for 12 and 24 DC grounded loads All ypes of resisive, inducive and capacive loads Replaces elecromechanical relays and discree circuis PROFET BTS 432 E2 Produc Summary oad dump 80 bb- Avalanche Clamp 8 bb (operaion) 4.... 42 bb (reverse) -32 RON 38 mω (SCp) 44 A (SCr) 3 A (SO) 11 A 1 Sraigh leads General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, inegraed in Smar SPMOS chip on chip echnology. Providing proecive funcions. 1 SMD Sandard olage source Overvolage proecion Curren limi Gae proecion R bb + bb 3 ogic 2 ESD olage sensor ogic Charge pump evel shifer Recifier imi for unclamped ind. loads Open load deecion Temperaure sensor oad 4 1 Signal Shor circui deecion PROFET oad 1) No exernal componens required, reverse load curren limied by conneced load. 2) Addiional exernal diode required for charged inducive loads Semiconducor Group 1 of 14 2003-Oc-01
Pin Symbol Funcion 1 - ogic ground BTS 432 E2 2 npu, acivaes he power swich in case of logical high signal 3 bb + Posiive power supply volage, he ab is shored o his pin 4 S Diagnosic feedback, low on failure (oad, ) O Oupu o he load Maximum Raings a Tj = 2 C unless oherwise specified Parameer Symbol alues Uni Supply volage (overvolage proecion see page 3) bb 63 oad dump proecion oaddump = U A + s, U A = 13. 3) s 66. R = 2 Ω, R = 1.1 Ω, d = 200 ms, = low or high oad curren (Shor-circui curren, see page 4) self-limied A Operaing emperaure range T j -40...+10 C Sorage emperaure range T sg -...+10 Power dissipaion (DC) P o 12 W nducive load swich-off energy dissipaion, single pulse T j =10 C: E AS 1.7 J Elecrosaic discharge capabiliy (ESD) ESD 2.0 k (uman Body Model) npu volage (DC) -0.... +6 Curren hrough inpu pin (DC) Curren hrough saus pin (DC) see inernal circui diagrams page 6... ±.0 ±.0 ma Thermal resisance chip - case: juncion - ambien (free air): SMD version, device on pcb 4) : R hjc R hja 1 7 bd K/W 3) S is seup wihou DUT conneced o he generaor per SO 7637-1 and D 40839 4) Device on 0mm*0mm*1.mm epoxy PCB FR4 wih 6cm 2 (one layer, 70µm hick) copper area for bb connecion. PCB is verical wihou blown air. Semiconducor Group 2 2003-Oc-01
Elecrical Characerisics BTS 432 E2 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 12 unless oherwise specified min yp max oad Swiching Capabiliies and Characerisics On-sae resisance (pin 3 o ) = 2 A T j =2 C: T j =10 C: Nominal load curren (pin 3 o ) SO Proposal: ON = 0., T C = 8 C Oupu curren (pin ) while disconneced or pulled up, = 0, see diagram page 7, Tj =-40...+10 C Turn-on ime o 90% : Turn-off ime o 10% : R = 12 Ω, Tj =-40...+10 C Slew rae on 10 o 30%, R = 12 Ω, Tj =-40...+10 C Slew rae off 70 o 40%, R = 12 Ω, Tj =-40...+10 C R ON 30 38 mω 70 (SO) 9 11 A (high) 1 ma on off 0 10 160 300 80 µs d /d on 0.4 2. /µs -d/d off 1 /µs Operaing Parameers Operaing volage ) Tj =-40...+10 C: bb(on) 4. 42 Undervolage shudown Tj =-40...+10 C: bb(under) 2.4 4. Undervolage resar Tj =-40...+10 C: bb(u rs) 4. Undervolage resar of charge pump bb(ucp) 6. 7. see diagram page 12 Tj =-40...+10 C: Undervolage hyseresis bb(under) = bb(u rs) - bb(under) bb(under) 0.2 Overvolage shudown Tj =-40...+10 C: bb(over) 42 2 Overvolage resar Tj =-40...+10 C: bb(o rs) 42 Overvolage hyseresis Tj =-40...+10 C: bb(over) 0.2 Overvolage proecion 6) Tj =-40 C: bb(az) 60 bb =40 ma Tj =2...+10 C: 63 67 Sandby curren (pin 3) T j =-40...+2 C: bb(off) 12 2 µa =0 T j =10 C: 18 60 eakage oupu curren (included in bb(off) ) (off) 6 µa =0 Operaing curren (Pin 1) 7), = 1.1 ma ) A supply volage increase up o bb = 6. yp wihou charge pump, bb - 2 6) see also ON(C) in able of proecion funcions and circui diagram page 7. Meassured wihou load. 7) Add, if > 0, add, if >. Semiconducor Group 3 2003-Oc-01
BTS 432 E2 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 12 unless oherwise specified min yp max Proecion Funcions 8) niial peak shor circui curren limi (pin 3 o ) 9), ( max 400 µs if ON > ON(SC) ) Tj =-40 C: Tj =2 C: Tj =+10 C: Repeiive shor circui curren limi (SCp) (SCr) 24 44 74 A T j = T j (see iming diagrams, page 10) 22 3 A Shor circui shudown delay afer inpu pos. slope ON > ON(SC), T j =-40..+10 C: d(sc) 80 400 µs min value valid only, if inpu "low" ime exceeds 30 µs Oupu clamp (inducive load swich off) a = bb - ON(C), = 30 ma ON(C) 8 Shor circui shudown deecion volage (pin 3 o ) ON(SC) 8.3 Thermal overload rip emperaure T j 10 C Thermal hyseresis T j 10 K nducive load swich-off energy dissipaion 10), T j Sar = 10 C, single pulse bb = 12 : bb = 24 : E AS E oad12 E oad24 1.7 1.3 1.0 Reverse baery (pin 3 o 1) 11) - bb 32 negraed resisor in bb line R bb 120 Ω J Diagnosic Characerisics Open load deecion curren (on-condiion) T j =-40 C: T j =2..10 C: (O) 2 2 900 70 ma 8) negraed proecion funcions are designed o preven C desrucion under faul condiions described in he daa shee. Faul condiions are considered as "ouside" normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 9) Shor circui curren limi for max. duraion of 400 µs, prior o shudown (see d(sc) page 4) 10) While demagneizing load inducance, dissipaed energy in PROFET is E AS = ON(C) * i () d, approx. E AS = 1 / 2 * * 2 * ( ON(C) ), see diagram page 8 ON(C) - bb 11) Reverse load curren (hrough inrinsic drain-source diode) is normally limied by he conneced load. Reverse curren of 0.3 A a bb = -32 hrough he logic heas up he device. Time allowed under hese condiion is dependen on he size of he heasink. Reverse can be reduced by an addiional exernal -resisor (10 Ω). npu and Saus currens have o be limied (see max. raings page 2 and circui page 7). Semiconducor Group 4 2003-Oc-01
BTS 432 E2 Parameer and Condiions Symbol alues Uni a Tj = 2 C, bb = 12 unless oherwise specified min yp max npu and Saus Feedback 12) npu urn-on hreshold volage (T+) 1. 2.4 T j =-40..+10 C: npu urn-off hreshold volage (T-) 1.0 T j =-40..+10 C: npu hreshold hyseresis (T) 0. Off sae inpu curren (pin 2) = 0.4 : (off) 1 30 µa On sae inpu curren (pin 2) = 3. : (on) 10 2 0 µa Saus invalid afer posiive inpu slope (shor circui) Tj=-40... +10 C: Saus invalid afer posiive inpu slope (open load) Tj=-40... +10 C: Saus oupu (open drain) Zener limi volage Tj =-40...+10 C, = +1.6 ma: low volage Tj =-40...+10 C, = +1.6 ma: d( SC) 80 200 400 µs d() 30 1600 µs (high) (low).4 6.1 0.4 12) f a ground resisor R is used, add he volage drop across his resisor. Semiconducor Group 2003-Oc-01
BTS 432 E2 Truh Table npu- Oupu Saus Normal operaion Open load Shor circui o Shor circui o bb Overemperaure Undervolage Overvolage = "ow" evel = "igh" evel level level 432 D2 13) ( 14) ) 1) 1) 432 E2/F2 ( 14) ) 432 2 1) 1) Terms npu circui (ESD proecion) bb 2 4 bb 3 bb PROFET 1 R ON R ESD- ZD1 ZD2 ZD1 6.1 yp., ESD zener diodes are no designed for coninuous curren 13) Power Transisor off, high impedance 14) ow resisance shor bb o oupu may be deeced by no-load-deecion 1) No curren sink capabiliy during undervolage shudown Semiconducor Group 6 2003-Oc-01
Saus oupu BTS 432 E2 Overvol. and reverse ba. proecion + + bb Z R bb R (ON) R ESD- ZD ESD-Zener diode: 6.1 yp., max ma; R (ON) < 20 Ω a 1.6 ma, ESD zener diodes are no designed for coninuous curren Shor Circui deecion Faul Condiion: ON > 8.3 yp.; high + bb R ogic R Signal PROFET R bb = 120 Ω yp., Z +R bb *40 ma = 67 yp., add R, R, R for exended proecion Open-load deecion ON-sae diagnosic condiion: ON < R ON * (O) ; high + bb ON ogic uni Shor circui deecion ON ON nducive and overvolage oupu clamp ogic uni Open load deecion + bb Z ON disconnec ON clamped o 8 yp. 2 4 3 bb PROFET 1 bb Any kind of load. n case of npu=high is - (T+). Due o >0, no = low signal available. Semiconducor Group 7 2003-Oc-01
BTS 432 E2 disconnec wih pull up 3 2 4 3 bb PROFET high 2 4 bb PROFET 1 1 bb bb Any kind of load. f > - (T+) device says off Due o >0, no = low signal available. bb disconnec wih charged inducive load bb high 2 4 3 bb PROFET 1 nducive oad swich-off energy dissipaion E bb E AS E oad bb PROFET = E E R Energy dissipaed in PROFET E AS = E bb + E - E R. E oad < E, E = 1 /2 * * 2 Semiconducor Group 8 2003-Oc-01
Opions Overview BTS 432 E2 all versions: igh-side swich, npu proecion, ESD proecion, load dump and reverse baery proecion, proecion agains loss of ground Type BTS 432D2 432E2 432F2 4322 ogic version D E F Overemperaure proecion Tj >10 C, lach funcion 16)17) Tj >10 C, wih auo-resar on cooling Shor-circui o proecion swiches off when ON >8.3 yp. 16) (when firs urned on afer approx. 200 µs) Open load deecion in OFF-sae wih sensing curren 30 µa yp. in ON-sae wih sensing volage drop across power ransisor Undervolage shudown wih auo resar Overvolage shudown wih auo resar Saus feedback for overemperaure shor circui o shor o bb open load undervolage overvolage Saus oupu ype CMOS Open drain Oupu negaive volage ransien limi (fas inducive load swich off) - 18) - 18) - - - 18) - - o bb - ON(C) oad curren limi high level (can handle loads wih high inrush currens) medium level low level (beer proecion of applicaion) 16) ach excep when bb - < ON(SC) afer shudown. n mos cases = 0 afer shudown ( 0 only if forced exernally). So he device remains lached unless bb < ON(SC) (see page 4). No lach beween urn on and d(sc). 17) Wih lach funcion. Reseed by a) npu low, b) Undervolage, c) Overvolage 18) ow resisance shor bb o oupu may be deeced by no-load-deecion Semiconducor Group 9 2003-Oc-01
BTS 432 E2 Timing diagrams Figure 2b: Swiching an inducive load Figure 1a: bb urn on: bb d(bb ) d() *) A open drain (O) A in case of oo early =high he device may no urn on (curve A) d(bb ) approx. 10 µs *) if he ime consan of load is oo large, open-load-saus may occur Figure 2a: Swiching a lamp, Figure 3a: Turn on ino shor circui, d(sc) d(sc) approx. 200µs if bb - > 8.3 yp. Semiconducor Group 10 2003-Oc-01
Figure 3b: Turn on ino overload, Figure 4a: Overemperaure: Rese if T j <T j BTS 432 E2 (SCp) (SCr) T J eaing up may require several milliseconds, bb - < 8.3 yp. Figure 3c: Shor circui while on: Figure a: Open load: deecion in ON-sae, urn on/off o open load d() **) open **) curren peak approx. 20 µs Semiconducor Group 11 2003-Oc-01
Figure b: Open load: deecion in ON-sae, open load occurs in on-sae BTS 432 E2 Figure 6b: Undervolage resar of charge pump ON [] on ON(C) off d( O1) d(o 2) off bb(over) bb(u rs) bb(o rs) normal open normal bb(under) bb(u cp) on bb charge pump sars a bb(ucp) =6. yp. bb [] d( O1) = bd µs yp., d( O2) = bd µs yp Figure 7a: Overvolage: Figure 6a: Undervolage: bb bb ON(C) bb(over) bb(o rs) bb(under) bb(u cp) bb(u rs) open drain Semiconducor Group 12 2003-Oc-01
BTS 432 E2 Package and Ordering Code All dimensions in mm Sandard TO-220AB/ BTS 432 E2 Ordering code Q67060-S6202-A2 TO-220AB/, Opion E3043 Ordering code BTS 432 E2 E3043 Q67060-S6202-A4 SMD TO-220AB/, Op. E3062 Ordering code BTS432E2 E3062A T&R: Q67060-S6202-A6 Semiconducor Group 13 2003-Oc-01
BTS 432 E2 Published by nfineon Technologies AG, S.-Marin-Srasse 3, D-81669 München nfineon Technologies AG 2001 All Righs Reserved. Aenion please! The informaion herein is given o describe cerain componens and shall no be considered as a guaranee of characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of non-infringemen, regarding circuis, descripions and chars saed herein. nfineon Technologies is an approved CECC manufacurer. nformaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares nfineon Technologies Office in Germany or our nfineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares nfineon Technologies Office. nfineon Technologies Componens may only be used in lifesuppor devices or sysems wih he express wrien approval of nfineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. ife suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. f hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. Semiconducor Group 14 2003-Oc-01