Smart Highside Power Switch

Transcription

1 Smart ighside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Features Short circuit protection Current limitation Overload protection Thermal shutdown Overvoltage protection (including load dump) oss of ground protection oss of protection (with external diode for charged inductive loads) ery low standby current Fast demagnetisation of inductive loads Electrostatic discharge (ESD) protection Optimized static electromagnetic compatibility (EMC) Diagnostic Function Proportional load current sense (with defined fault signal during thermal shutdown) Data Sheet BTS 443 P Product Summary Operating voltage (on) On-state resistance RON 16 mω oad current (O) I(O) 25 A Current limitation I(SCr) 65 A Package TO Application Power switch with current sense diagnostic feedback for 12 and 24 DC grounded loads All types of resistive, capacitive and inductive loads (no PWM with inductive loads) Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions. 3 & Tab oltage source Overvoltage protection Current limit Gate protection R + 2 ESD oltage sensor ogic Charge pump evel shifter Rectifier imit for unclamped ind. loads Output oltage detection Current Sense 1, 5 I oad I Temperature sensor 4 I oad GND R ogic GND Infineon Technologies AG Page 1 of Oct-1

2 Pin Symbol Function 1 O Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*) 2 I Input, activates the power switch in case of short to ground Tab/(3) + Positive power supply voltage, the tab is shorted to this pin. 4 S Diagnostic feedback providing a sense current proportional to the load current; high current on failure (see Truth Table on page 6) 5 O Output to the load. The pin 1 and 5 must be shorted with each other especially in high current applications!*) *) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol alues Unit Supply voltage (overvoltage protection see page 4) 36 Supply voltage for full short circuit protection 24 1) (see also diagram on page 9) T j = C: oad dump protection oaddump = U A + s, U A = ) oad dump 6 R I = 2 Ω, R = 2.7 Ω, t d = 2 ms, = low or high oad current (Short-circuit current, see page 4) I self-limited A Operating temperature range T j C Storage temperature range T stg Power dissipation (DC) TC 25 C P tot 42 W Inductive load switch-off energy dissipation, single pulse U=12, I=1A, =3m T j =15 C: E AS.15 J Electrostatic discharge capability (ESD) (uman Body Model) acc. ESD assn. std. S ; R=1.5kΩ; C=1pF ESD 4. k Current through input pin (DC) Current through current sense pin (DC) see internal circuit diagrams page 7 I I +15, , -1 ma 1 ) Short circuit is tested with 1mΩ and 2µ 2) oad dump is set-up without the DUT connected to the generator per O and D 4839 Infineon Technologies AG Page 2 of Oct-1

3 Thermal Characteristics Data Sheet BTS 443 P Parameter and Conditions Symbol alues Unit min typ max Thermal resistance chip - case: R thjc 3) 1.5 K/W junction - ambient (free air): R thja 8 SMD version, device on PCB 4) : 45 Electrical Characteristics Parameter and Conditions Symbol alues Unit at T j = -4 C...15 C, = 12 unless otherwise specified min typ max oad Switching Capabilities and Characteristics On-state resistance (pin 3 to pin 1,5) =, I = 5 A T j =25 C: T j =15 C: Output voltage drop limitation at small load currents (Tab to pin 1,5) T j = C: Nominal load current (Tab to pin 1,5) O Proposal: T C =85 C, ON.5, T j 15 C SMD 4) : T A =85 C, ON.5, T j 15 C Turn-on time I to 9% : Turn-off time I to 1% : R = 2,5Ω, T j = C Slew rate on 1 to 3%, R = 2.5 Ω, T j = C Slew rate off 7 to 4%, R = 2.5 Ω, T j = C R ON mω ON(N) 5 m I (O) I (nom) t on t off A µs d /dt on.1 1 /µs -d/dt off.1 1 /µs 3) Thermal resistance R thc case to heatsink (about K/W with silicone paste) not included! 4) Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 7µm thick) copper area for connection. PCB is vertical without blown air. Infineon Technologies AG Page 3 of Oct-1

4 Parameter and Conditions Symbol alues Unit at T j = -4 C...15 C, = 12 unless otherwise specified min typ max Operating Parameters Operating voltage ( =) (on) Undervoltage shutdown 5) b(u) Undervoltage restart of charge pump ( =) (ucp) Overvoltage protection 6) I =15 ma Standby current I = T j = C: T j =15 C: Z, I (off) µa Protection Functions 7) Short circuit current limit (Tab to pin 1,5) ON =8, time until limitation max. 3µs Tj =-4 C: Tj =25 C: Tj =+15 C: I (SC) Repetitive short circuit current limit, Tj = Tjt I (SCr) 65 A Output clamp (inductive load switch off) at = - ON(C) (e.g. overvoltage) ON(C) I = 4 ma 8) Thermal overload trip temperature T jt 15 C Thermal hysteresis T jt 1 K A Reverse Battery Reverse battery voltage - 2 On-state resistance (pin 1,5 to pin 3) = - 8, =, I = -5 A, R = 1 kω, T j =25 C: R ON(rev) 22 mω = -12, =, I = -5 A, R = 1 kω, T j =25 C: T j =15 C: Integrated resistor in line R 2 Ω 5) b=- see diagram on page 11. 6) see also ON(C) in circuit diagram on page 7. 7) Integrated protection functions are designed to prevent IC destruction under fault condition described in the data sheet. Fault conditions are considered as outside normal operating range. Protection functions are not for continuous repetitive operation. 8) see also page 12. Infineon Technologies AG Page 4 of Oct-1

5 Diagnostic Characteristics Current sense ratio, static on-condition k I = I : I ON <1.5, < - 5, b >4.5 9) I = 2A, Tj = -4 C: Tj = +25 C: Tj = +15 C: I = 5A, Tj = -4 C: Tj = +25 C: Tj = +15 C: I = 2.5A, Tj = -4 C: Tj = +25 C: Tj = +15 C: I = 1A, Tj = -4 C: Tj = +25 C: Tj = +15 C: k I I = (e.g. during de-energising of inductive loads): n.a. Sense current under fault conditions; DS >1.5, typ. T j = C: I,fault ma Fault-Sense signal delay after negative input slope t delay(fault).8 ms Current sense leakage current I = : =, I = : I () I () Current sense settling time to I static ±1% after positive input slope, I = 2 A 1) t son() 4 µs T j = C: Overvoltage protection I = 15 ma T j = C: b(z) Input Required current capability of input switch I (on) ma T j = C: Maximum input current for turn-off T j = C: I (off) 5 µa µa 9) If ON is higher, the sense current is no longer proportional to the load current due to sense current saturation. 1 ) not subject to production test, specified by design Infineon Technologies AG Page 5 of Oct-1

6 Truth Table Normal operation Overload Short circuit to GND Overtemperature Short circuit to Open load Input Current level Output level Z Current Sense I nominal I fault I fault I fault <nominal 11 = "ow" evel = "igh" evel Z = high impedance, potential depends on external circuit Terms I b 3 ON I 2 1,5 R b 4 I I D S R Two or more devices can easily be connected in parallel to increase load current capability. 11) ow ohmic short to may reduce the output current I and therefore also the sense current I. Infineon Technologies AG Page 6 of Oct-1

7 Input circuit (ESD protection) Inductive and overvoltage output clamp Z1 + Z, ZD R ON b I ON is clamped to ON(Cl) = 42 typ. ESD-Zener diode: 68 typ., max 15 ma; Current sense output Normal operation Overvoltage protection of logic part R I,fault ZD Z, Z, Z, R + I R R ogic Z, = 68 (typ.), R = 1 kω nominal (or 1 kω /n, if n devices are connected in parallel). I S = I /k ilis can be only driven by the internal circuit as long as out - > 5. If you want to measure load currents up to I (M), R should be less than I ( M ) 5 / K Note: For large values of R the voltage can reach almost. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open. ilis. R R Z, Signal GND R = 2 Ω typ., Z, = Z, = 68 typ., R = 1 kω nominal. Note that when overvoltage exceeds 73 typ. a voltage above 5 can occur between and GND, if R, Z, are not used. Infineon Technologies AG Page 7 of Oct-1

8 Reversave (Reverse battery protection) ersion b: R - R ogic Power Transistor Zb Signal D R R Power R Note that there is no reverse battery protection when using a diode without additional Z-diode Z, Zb. R 1kΩ, R = 1 kω nominal. Add R for reverse battery protection in applications with above 16; recommended value: A, = R R R 12 To minimise power dissipation at reverse battery operation, the summarised current into the and pin should be about 5mA. The current can be provided by using a small signal diode D in parallel to the input switch, by using a MOSFET input switch or by proper adjusting the current through R and R. Since the current through R generates additional heat in the device, this has to be taken into account in the overall thermal considerations. ersion c: Sometimes a necessary voltage clamp is given by non inductive loads R connected to the same switch and eliminates the need of clamping circuit: R disconnect with energised inductive load Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. ( Z < 73 or Zb < 3 if R =). For higher clamp voltages currents at and have to be limited to 25 ma. ersion a: Z Infineon Technologies AG Page 8 of Oct-1

9 Inductive load switch-off energy dissipation E Maximum allowable load inductance for a single switch off = f (I ); T j,start = 15 C, = 12, R = Ω E AS i (t) E oad [m] 1 I R Z { R E E R 1 Energy stored in load inductance: 1 E = 1 /2 I 2 While demagnetising load inductance, the energy dissipated in is E AS = E + E - E R = ON(C) i (t) dt, with an approximate solution for R > Ω: E AS = I I R ( 2 R + (C) ) ln (1+ (C) ) The device is not suitable for permanent PWM with inductive loads if active clamping occurs every cycle I [A] Infineon Technologies AG Page 9 of Oct-1

10 Timing diagrams Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2a: Switching motors and lamps: I I 9% t on d/dtoff 1% d/dton t off I tslc() tslc() I I oad 1 oad 2 I t son() t soff() The sense signal is not valid during a settling time after turn-on/off and after change of load current. t I Sense current above I,fault can occur at very high inrush currents. t Figure 1b: typical behaviour of sense output: Figure 2b: Switching an inductive load: I S I I,fault >= 2.5mA I (lim) = 2A I I I t Infineon Technologies AG Page 1 of Oct-1

11 Figure 3a: Short circuit: Figure 5a: Undervoltage restart of charge pump, overvoltage clamp 12 I 1 8 = I (SCp) I (SCr) 6 4 dynamic, short Undervoltage not below b(u) ON(C) I I fault 2 I = t ON(C) b(ucp) 8 1 b(u) 12 Figure 4a: Overtemperature Reset if T j <T jt I I I,fault Auto Restart T j t Infineon Technologies AG Page 11 of Oct-1

12 Figure 6a: Current sense versus load current: Figure 7a: Output voltage drop versus load current: [ma] I [] ON.1 R ON 2. ON(N) [A] I [A] 8 I Figure 6b: Current sense ratio 12) : k I [A] I 12 ) This range for the current sense ratio refers to all devices. The accuracy of the k I can be raised by means of calibration the value of k I for every single device. Infineon Technologies AG Page 12 of Oct-1

13 Package and Ordering Code All dimensions in mm D-Pak-5 Pin: TO Sales Code BTS443P Ordering code Q676-S744-A 2 1± ±.1 A B ± (4.17).8 ±.15 1± max per side x.6 ± M A B.51 min GPT9161 All metal surfaces tin plated, except area of cut. Published by Infineon Technologies AG, St.-Martin-Strasse 53, D München Infineon Technologies AG 21 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. ife support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Infineon Technologies AG Page 13 of Oct-1