Datasheet PROFET BTS 723 GW. Smart High-Side Power Switch Two Channels: 2 x 100mΩ Status Feedback Suitable for 42V

Transcription

1 Daashee PROFET BTS 723 GW Smar igh-side Power Swich Two Channels: 2 x 100mΩ Saus Feedback Suiable for 42 Produc Summary Operaing olage bb(on) Acive channels One wo parallel On-sae Resisance R ON 105mΩ 53mΩ Nominal load curren (NOM) 2.9A 4.2A Curren limiaion (SCr) 8A 8A Package P-DSO-14 General Descripion N channel verical power MOSFET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, monolihically inegraed in Smar SPMOS 80 echnology. Providing embedded proecive funcions An array of resisors is inegraed in order o reduce he exernal componens Applicaions µc compaible high-side power swich wih diagnosic feedback for 12 and 24 and 42 grounded loads All ypes of resisive, inducive and capaciive loads Mos suiable for inducive loads Replaces elecromechanical relays, fuses and discree circuis Basic Funcions CMOS compaible inpu mproved elecromagneic compaibiliy (EMC) Fas demagneizaion of inducive loads Sable behaviour a undervolage Wide operaing volage range ogic ground independen from load ground Opimized inverscurren capabiliy Proecion Funcions Shor circui proecion Overload proecion Curren limiaion Thermal shudown Overvolage proecion (including load dump) wih exernal resisor Reverse baery proecion wih exernal resisor oss of ground and loss of bb proecion Elecrosaic discharge proecion (ESD) Diagnosic Funcion Diagnosic feedback wih open drain oupu and inegraed pull up resisors Open load deecion in OFF-sae Feedback of hermal shudown in ON-sae Block Diagram Diagnosic feedback of boh channels works properly in case of inverse curren Saus pull up volage PROFET ogic Channel 1 ogic Channel 2 bb 1 oad 1 2 oad 2 nfineon Technologies AG 1 of Oc-01

2 Funcional diagram 11 SPU: Pin for exernal Pull Up olage eadframe: bb 1, 7, 8, R = 20kΩ R = 12kΩ 3 1 R = 850Ω 6 2 R = 20kΩ 5 2 R = 850Ω Funcions and Componens of inpulogic and gae-conrol: - ESD-proecion - Charge pump, level shifer, recifier - Gae proecion - Curren limi - imi for unclamped inducive loads Funcion and componens of oupulogic - Open load deecion - Shor circui deecion - Temperaure sensor Saus 1 Funcion see ruhable ogic channel one ogic channel wo Funcion and componens of inpulogic and gae-conrol equivalen o channel one Funcion and componens of oupulogic equivalen o channel one Saus 2 Funcion see ruhable 1 12, 13 oad 1 oad bb 2 9, 10 oad 2 4 ogic PROFET oad nfineon Technologies AG Oc-01

3 Pin Definiions and Funcions Pin Symbol Funcion Posiive power supply volage. Design he 1,7, wiring for he simulaneous max. shor circui 8,14, bb currens from channel 1 o 2 and also for low hermal resisance 2 1 npu 1,2 acivaes channel 1,2 in case 6 2 of logic high signal 12,13 1 Oupu 1,2 proeced high-side power oupu of channel 1,2. Design he wiring for he max. 9,10 2 shor circui curren; boh oupupins have o be conneced in parallel for operaion according his spec. 3 1 Diagnosic feedback 1,2 of channel 1,2 5 2 open drain 4 ogic Ground 11 SPU Connecion for exernal pull up volage source for he open drain saus oupu. Pull up resisors are inegraed. Pin configuraion (op view) bb 1 14 bb SPU bb 7 8 bb nfineon Technologies AG Oc-01

4 Maximum Raings a T j = 25 C unless oherwise specified BTS 723 GW Parameer Symbol alues Uni Supply volage (overvolage proecion see page 6) bb 58 Supply volage for full shor circui proecion bb 50 T j,sar = C Oupu olage o bb ON 70 Negaive volage slope a oupu -d /d 20 /µs oad curren (Shor-circui curren, see page 7) 1 ) (M) A oad dump proecion 2) oaddump = A + s, A = 27 oad dump 4) 70 R 3) = 8 Ω, d = 200 ms; = low or high, each channel loaded wih R = 20 Ω, Operaing emperaure range T j C Sorage emperaure range T sg Power dissipaion (DC) 5) T a = 25 C: P o 3.0 W (all channels acive) T a = 85 C: 1.6 Maximal swichable inducance, single pulse bb = 12, T j,sar = 150 C 5), = 2.5 A, E AS = 110 mj, 0 Ω one channel: Z 23.0 m = 3.5 A, E AS = 278 mj, 0 Ω wo parallel channels: 30.0 see diagrams on page 12 Elecrosaic discharge capabiliy (ESD): ESD 1.0 k (uman Body Model) acc. M-D883D, mehod and ESD assn. sd. S R=1.5kΩ; C=100pF npu volage (DC) ±42 Curren hrough inpu pin (DC) ±2.0 ma Curren hrough saus pin (DC) ±2.0 Saus pull up volage SPU ±42 1 ) Curren limi is a proecion funcion. Operaion in curren limiaion is considered as "ouside" normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 2) Supply volages higher han bb(az) require an exernal curren limi for he and saus pins (a 150Ω resisor for he connecion is recommended. 3) R = inernal resisance of he load dump es pulse generaor 4) oad dump is seup wihou he DUT conneced o he generaor per SO and D ) Device on 50mm*50mm*1.5mm epoxy PCB FR4 wih 6cm 2 (one layer, 70µm hick) copper area for bb connecion. PCB is verical wihou blown air. See page 15 nfineon Technologies AG Oc-01

5 Thermal Characerisics Parameer and Condiions Symbol alues Uni min yp Max Thermal resisance juncion - soldering poin 5),6) each channel: R hjs 25 K/W juncion - ambien 5) Elecrical Characerisics one channel acive: all channels acive: R hja Parameer and Condiions, each of he wo channels Symbol alues Uni a Tj = C, bb = 24 unless oherwise specified min yp Max oad Swiching Capabiliies and Characerisics On-sae resisance ( bb o ); = 2 A, bb 7 each channel, T j = 25 C: T j = 150 C: wo parallel channels, T j = 25 C: see diagram, page 12 R ON mω 6) Soldering poin: Upper side of solder edge of device pin 15. See page 15 nfineon Technologies AG Oc-01

6 Parameer and Condiions, each of he wo channels Symbol alues Uni a Tj = C, bb = 24 unless oherwise specified min yp Max Nominal load curren one channel acive: wo parallel channels acive: Device on PCB 7), Ta = 85 C, Tj 150 C Oupu curren while disconneced or pulled up 8) ; bb = 30, = 0, see diagram page 11 Turn-on ime 9) o 90% : Turn-off ime R = 12 Ω o 10% : Slew rae on 9) 10 o 30%, R = 12 Ω: Slew rae off 9) 70 o 40%, R = 12 Ω: (NOM) (high) 1.0 ma on off A µs d/d on /µs -d/d off /µs Operaing Parameers Operaing volage bb(on) Undervolage resar of charge pump Tj = C: Tj =+150 C: Overvolage proecion 10) bb = 40 ma Sandby curren 11) T j =-40 C C: T j =+125 C 12) : = 0; see diagram page 10 T j =+150 C: Off-Sae oupu curren (included in bb(off) ) = 0; each channel Operaing curren 13), = 5, one channel on: all channels on: bb(ucp) bb(az) bb(off) µa (off) 3 µa ma 7) Device on 50mm*50mm*1.5mm epoxy PCB FR4 wih 6cm 2 (one layer, 70µm hick) copper area for bb connecion. PCB is verical wihou blown air. See page 15 8 ) no subjec o producion es, specified by design 9) See iming diagram on page ) Supply volages higher han bb(az) require an exernal curren limi for he ; a 150Ω resisor is recommended. See also ON(C) in able of proecion funcions and circui diagram on page ) Measured wih load; for he whole device; all channels off 12 ) no subjec o producion es, specified by design 13) Add, if > 0 nfineon Technologies AG Oc-01

7 Parameer and Condiions, each of he wo channels Symbol alues Uni a Tj = C, bb = 24 unless oherwise specified min yp Max Proecion Funcions 14) Curren limi, (see iming diagrams, page 13) Tj =-40 C: Tj =25 C: Tj =+150 C: Repeiive shor circui curren limi 15), T j = T j each channel wo parallel channels (see iming diagrams, page 13) niial shor circui shudown ime T j,sar =25 C: (see iming diagrams on page 13) (lim) 5 (SCr) A off(sc) 2 ms Oupu clamp (inducive load swich off) 16) a ON(C) = bb -, = 1 A ON(C) Thermal overload rip emperaure T j 150 C Thermal hyseresis T j 10 K Reverse Baery Reverse baery volage 17) - bb 24 Drain-source diode volage 18) (ou > bb) - ON 650 m = A, Tj = +150 C nverse curren 19) curren in case of 3A inverse curren 20) (inv cur) 15 ma A 14) negraed proecion funcions are designed o preven C desrucion under faul condiions described in he daa shee. Faul condiions are considered as "ouside" normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 15 ) no subjec o producion es, specified by design 16) f channels are conneced in parallel, oupu clamp is usually accomplished by he channel wih he lowes ON(C) 17) Requires a 150 Ω resisor in connecion. The reverse load curren hrough he inrinsic drain-source diode has o be limied by he conneced load. Power dissipaion is higher compared o normal operaing condiions due o he volage drop across he drain-source diode. The emperaure proecion is no acive during reverse curren operaion! npu and Saus currens have o be limied (see max. raings page 4 and circui page 10). 18 ) no subjec o producion es, specified by design 19 ) no subjec o producion es, specified by design 20) n case of an inverse curren of 3A he boh saus oupus mus no be disurbed. The neighbour channel can be swiched normally; no all paramers lay wihin he range of he spec Please noe, ha in case of an inverse curren no proecion funcion is acive. The power dissipaion is higher compared o normal operaion in forward mode due o he volage drop across he drain-source diode (as i is wih reverse polariiy). f his mode lass for a oo long ime he device can be desroyed. nfineon Technologies AG Oc-01

8 Parameer and Condiions, each of he wo channels Symbol alues Uni a Tj = C, bb = 24 unless oherwise specified min yp Max Diagnosic Characerisics Open load deecion curren 21) (off) 3 µa Open load deecion volage (O) Shor circui deecion volage 22) bb (pin 1,7,8,14) o 1 (pin 12,13) resp. bb (pin 1,7,8,14) o 2 ( pin 9,10) ON(SC) 4.0 npu and Saus Feedback 23) negraed resisors; T j =25 C: (see circui page 2) npu Saus Saus pull up R R R pull up kω 1.2 kω kω npu urn-on hreshold volage (T+) npu urn-off hreshold volage (T-) 1.0 npu hreshold hyseresis (T) 0.25 Off sae inpu curren = 0.4 : (off) 1 15 µa On sae inpu curren = 5 : (on) µa Saus oupu (open drain) Zener limi volage Saus low volage SPU = 5: (high) (low) ) no subjec o producion es, specified by design 22 ) no subjec o producion es, specified by design 23) f a ground resisor R is used, add he volage drop across hese resisors. nfineon Technologies AG Oc-01

9 Truh Table Channel 1 npu 1 Oupu 1 Saus 1 Channel 2 npu 2 Oupu 2 Saus 2 level level BTS 723 Normal operaion Open load > 2.7 Shor circui o Shor circui o bb Overemperaure Parallel swiching of channel 1 and 2 is easily possible by connecing he inpus and oupus in parallel. n his mode i is recommended o use only one saus. Terms bb bb eadframe bb PROFET 1 Channel ,13 ON1 1 2 eadframe 2 bb 2 6 PROFET 2 2 Channel ,10 ON2 2 4 R eadframe ( bb ) is conneced o pin 1,7,8,14 Exernal R opional; a single resisor R = 150Ω for reverse baery proecion up o he max. operaing volage. nfineon Technologies AG Oc-01

10 npu circui (ESD proecion), 1 or 2 R BTS 723 GW nducive and overvolage oupu clamp, 1 or 2 + bb Z ESD-ZD ON The use of ESD zener diodes as volage clamp a DC condiions is no recommended. Saus oupu, 1 or 2 ON clamped o ON(C) = 64 yp. Power R (ON) Saus Pull Up olage R Pull up Overvol. and reverse ba. proecion Saus pull up volage + bb ESD- ZD R ESD-Zener diode: 6.1 yp., R (ON) < 250 Ω, R = 850 Ω yp., R pull up = 12 kω yp. The use of ESD zener diodes as volage clamp a DC condiions is no recommended Shor Circui deecion Faul Signal a -Pin: ON > 4.0 yp, no swich off by he PROFET iself, exernal swich off recommended! + bb R R R Saus puul up Z1 ogic R Signal Z2 PROFET R oad oad Z1 = 6.1 yp., Z2 = 63 yp., R = 150 Ω, R = 850 Ω yp., R = 20 kω yp., R pull up = 12 kω yp n case of reverse baery he load curren has o be limied by he load. Temperaure proecion is no acive ON ogic uni Shor circui deecion nfineon Technologies AG Oc-01

11 Open-load deecion, 1 or 2 OFF-sae diagnosic condiion: Open load, if > 2.7 yp. ( low) (O) yp. 2µA An exernal resior can be used o increase he open load deecion curren BTS 723 GW bb disconnec wih energized inducive load high bb PROFET bb ON OFF bb ogic uni Open load deecion Signal (O) For inducive load currens up o he limis defined by Z (max. raings and diagram on page 12) each swich is proeced agains loss of bb. Consider a your PCB layou ha in he case of bb disconnecion wih energized inducive load all he load curren flows hrough he connecion. disconnec bb PROFET bb Any kind of load. Due o > 0, no = low signal available. disconnec wih pull up bb PROFET bb Any kind of load. f > - (T+) device says off Due o > 0, no = low signal available. nfineon Technologies AG Oc-01

12 nducive load swich-off energy dissipaion E bb E AS Typ. on-sae resisance R ON = f ( bb,t j ); = 2 A, = high R ON [mohm] = bb PROFET E oad E Tj = 150 C Z { R E R 120 Energy sored in load inducance: 25 C E = 1 /2 2 While demagneizing load inducance, he energy dissipaed in PROFET is E AS = E bb + E - E R = ON(C) i () d, C wih an approximae soluion for R > 0 Ω: E AS = R ( 2 R bb + (C) ) ln (1+ (C) ) bb [] Maximum allowable load inducance for a single swich off (one channel) 5) = f ( ); T j,sar = 150 C, bb = 12, R = 0 Ω Z [m] 1000 Typ. sandby curren bb(off) = f (T j ); bb = , 1,2,3,4 = low bb(off) [µa] [A] T j [ C] nfineon Technologies AG Oc-01

13 Timing diagrams All channels are symmeric and consequenly he diagrams are valid for channel 1 and channel 2 Figure 1a: bb urn on, : Figure 2b: Swiching an inducive load bb d(bb ) A open drain A in case of oo early =high he device may no urn on (curve A) d(bb ) approx. 150 µs Figure 2a: Swiching a resisive load, urn-on/off ime and slew rae definiion: Figure 3a: Shor circui: shu down by overemperaure, rese by cooling 90% on d/doff normal operaion Oupu shor o 10% d/don off (lim) (SCr) off(sc) eaing up requires several milliseconds, depending on exernal condiions. Exernal shudown in response o saus faul signal recommended. nfineon Technologies AG Oc-01

14 Figure 4a: Overemperaure: Rese if T j <T j Figure 6: Overvolage, no shudown: BTS 723 GW bb ON(C) (O) T J Figure 5a: Open load, : deecion in OFF-sae, open load occurs in off-sae (O) normal open normal *) *) *) = 2 µa yp. > 2.7 nfineon Technologies AG Oc-01

15 Package and Ordering Code Sandard: P-DSO-14-9 Sales Code BTS 723 GW Ordering Code Q67060-S7501 Published by nfineon Technologies AG, S.-Marin-Srasse 53, D München nfineon Technologies AG 2001 All Righs Reserved. Aenion please! The informaion herein is given o describe cerain componens and shall no be considered as a guaranee of characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of non-infringemen, regarding circuis, descripions and chars saed herein. nfineon Technologies is an approved CECC manufacurer. nformaion All dimensions in millimeres Definiion of soldering poin wih emperaure T s : upper side of solder edge of device pin 1. Pin 1 Prined circui board (FR4, 1.5mm hick, one layer 70µm, 6cm 2 acive heasink area) as a reference for max. power dissipaion P o, nominal load curren (NOM) and hermal resisance R hja For furher informaion on echnology, delivery erms and condiions and prices please conac your neares nfineon Technologies Office in Germany or our nfineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares nfineon Technologies Office. nfineon Technologies Componens may only be used in lifesuppor devices or sysems wih he express wrien approval of nfineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. ife suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. f hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 25mm 12mm 12mm nfineon Technologies AG Oc-01