2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 madc V CEO(sus) = 60 Vdc (Min) 2N6387 = 80 Vdc (Min) 2N6388 Low CollectorEmitter Saturation Voltage V CE(sat) = 2.0 Vdc (Max) @ I C = 5.0 Adc 2N6387, 2N6388 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors TO220AB Compact Package PbFree Packages are Available* DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 80 VOLTS MARKING DIAGRAM MAXIMUM RATINGS (Note 1) 4 Rating Symbol Value Unit CollectorEmitter Voltage 2N6387 V CEO 60 Vdc 2N6388 80 CollectorBase Voltage 2N6387 2N6388 V CB 60 80 Vdc 1 2 3 TO220AB CASE 221A STYLE 1 2N638xG AYWW EmitterBase Voltage V EB 5.0 Vdc Collector Current Continuous Peak I C 10 15 Adc Base Current I B 250 madc Total Power Dissipation @ T C = 25 C Derate above 25 C Total Power Dissipation @ T A = 25 C Derate above 25 C Operating and Storage Junction, Temperature Range THERMAL CHARACTERISTICS P D 65 0.52 P D 2.0 0.016 W W/ C W W/ C T J, T stg 65 to +150 C Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 1.92 C/W Thermal Resistance, JunctiontoAmbient R JA 62.5 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2N638x = Device Code x = 7 or 8 G = PbFree Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping 2N6387 TO220AB 50 Units / Rail 2N6387G TO220AB 50 Units / Rail (PbFree) 2N6388 TO220AB 50 Units / Rail 2N6388G TO220AB (PbFree) 50 Units / Rail Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2007 November, 2007 Rev. 13 1 Publication Order Number: 2N6387/D
T A 4.0 T C 80 P D, POWER DISSIPATION (WATTS) 2.0 60 40 20 T A T C 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE ( C) Figure 1. Power Derating ÎÎ ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) (Note 2) ÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V ÎÎ (I C = 200 madc, I B = 0) 2N6387 CEO(sus) Vdc 60 2N6388 Î 80Î Collector Cutoff Current ÎÎ I CEO Î madc (V CE = 60 Vdc, I B = 0) 2N6387 (V CE = 80 Vdc, I B = 0) 2N6388 Î Î ÎÎ Collector Cutoff Current I CEX ÎÎ Adc (V CE = 60 Vdc, V EB(off) = 1.5 Vdc) 2N6387 Î Î 300 (V CE 80 Vdc, V EB(off) = 1.5 Vdc) 2N6388 300 (V CE = 60 Vdc, V EB(off) = 1.5 Vdc, T C = 125 C) 2N6387 Î Î madc (V CE = 80 Vdc, V EB(off) = 1.5 Vdc, T C = 125 C) 2N6388 Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0) I ÎÎ EBO Î 5.0 madc ÎÎ ON CHARACTERISTICS (Note 3) DC Current Gain h (I C = 5.0 Adc, V CE = Vdc) 2N6387, 2N6388 ÎÎ FE ÎÎ 1000 20,000 (I C = 1 0 Adc, V CE = Vdc) 2N6387, 2N6388 Î 100Î CollectorEmitter Saturation Voltage ÎÎ V CE(sat) Î Vdc (I C = 5.0 Adc, I B = 0.01 Adc) 2N6387, 2N6388 2.0 (I C = 10 Adc, I B = Adc) 2N6387, 2N6388 Î Î BaseEmitter On Voltage ÎÎ V BE(on) Î Vdc (I C = 5.0 Adc, V CE = Vdc) 2N6387, 2N6388 Î Î 2.8 (I C = 10 Adc, V CE = Vdc) 2N6387, 2N6388 4.5 ÎÎ DYNAMIC CHARACTERISTICS ÎÎ SmallSignal Current Gain (I C = Adc, V CE = 5.0 Vdc, f test = MHz) h fe 20Î Output Capacitance (V CB = 10 Vdc, I E = 0, f = MHz) C ob Î 200 pf SmallSignal Current Gain (I C = Adc, V CE = 5.0 Vdc, f = khz) h ÎÎ fe 1000Î 2. Indicates JEDEC Registered Data. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2
R B AND R C VARIED TO OBTAIN DESIRED CURRENT LEVELS V 1 APPROX + 12 V V 2 0 D 1 MUST BE FAST RECOVERY TYPES, e.g., 1N5825 USED ABOVE I B 100 ma MSD6100 USED BELOW I B 100 ma APPROX 25 s 8 V t r, t f 10 ns DUTY CYCLE = % 51 R B TUT Figure 2. Switching Times Test Circuit D 1 8.0 k 120 V CC + 30 V R C SCOPE 4.0 V FOR t d AND t r, D 1 IS DISCONNECTED AND V 2 = 0 7.0 5.0 t s t f t, TIME ( s) μ 0.7 t r 0.3 0.07 V CC = 30 V I C /I B = 250 I B1 = I B2 0.5 2.0 5.0 10 I C, COLLECTOR CURRENT (AMPS) t d Figure 3. Switching Times r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.5 0.3 0.07 0.05 0.03 0.02 D = 0.5 0.05 0.02 0.01 SINGLE PULSE Z JC (t) = r(t) R JC R JC = 1.92 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) Z JC(t) P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2 0.01 0.01 0.02 0.05 0.5 2.0 5.0 10 20 50 100 200 500 k t, TIME (ms) Figure 4. Thermal Response 3
I C, COLLECTOR CURRENT (AMPS) 20 10 5.0 2.0 0.5 0.03 T J = 150 C dc 50 ms 5 ms BONDING WIRE LIMITED THERMALLY LIMITED @ T C = 100 C SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V CEO 50 s 1 ms 2N6387 2N6388 10 s 2.0 4.0 6.0 10 20 40 60 80 V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown h FE, SMALLSIGNAL CURRENT GAIN 10,000 5000 3000 2000 1000 500 300 200 100 50 30 20 T C = 25 C V CE = 4.0 Vdc I C = Adc C, CAPACITANCE (pf) 300 200 100 70 50 C ib C ob 10 2.0 5.0 10 20 50 100 200 500 1000 f, FREQUENCY (khz) 30 0.5 2.0 5.0 10 20 50 100 V R, REVERSE VOLTAGE (VOLTS) Figure 6. SmallSignal Current Gain Figure 7. Capacitance h FE, DC CURRENT GAIN 20,000 10,000 5000 3000 2000 1000 500 300 200 V CE = 4.0 V T J = 150 C 25 C 55 C 0.3 0.5 0.7 2.0 5.0 7.0 10 I C, COLLECTOR CURRENT (AMP) V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 2.6 I C = 2.0 A 4.0 A 6.0 A 2.2 1.8 1.4 0.3 0.5 0.7 2.0 5.0 7.0 10 20 30 I B, BASE CURRENT (ma) Figure 8. DC Current Gain Figure 9. Collector Saturation Region 4
V, VOLTAGE (VOLTS) 2.5 2.0 1.5 V BE(sat) @ I C /I B = 250 V BE @ V CE = 4.0 V V CE(sat) @ I C /I B = 250 0.5 0.3 0.5 0.7 2.0 5.0 7.0 10 I C, COLLECTOR CURRENT (AMP) Figure 10. On Voltages, TEMPERATURE COEFFICIENTS (mv/ C) V θ + 5.0 + 4.0 + + 2.0 + 0 2.0 4.0 *I C /I B h FE @ VCE 4.0 V 3 * VC for V CE(sat) 55 C to 25 C VB for V BE 25 C to 150 C 25 C to 150 C 5.0 0.3 0.5 0.7 2.0 5.0 7.0 10 I C, COLLECTOR CURRENT (AMP) 55 C to 25 C Figure 11. Temperature Coefficients 10 5, COLLECTOR CURRENT ( A) μ I C 10 4 10 3 10 2 10 1 10 0 REVERSE V CE = 30 V T J = 150 C 100 C FORWARD BASE 8.0 k 120 COLLECTOR 25 C 10 1 0.6 0.4 0 + + 0.4 + 0.6 + 0.8 + + 1.2 + 1.4 V BE, BASEEMITTER VOLTAGE (VOLTS) Figure 12. Collector CutOff Region EMITTER Figure 13. Darlington Schematic 5
PACKAGE DIMENSIONS TO220 CASE 221A09 ISSUE AE H Q Z L V G B 4 1 2 3 N D A K F T U S R J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 18 C 60 90 4.07 4.82 D 0.025 0.035 0.64 0.88 F 42 61 3.61 4.09 G 0.095 05 2.42 2.66 H 10 55 2.80 3.93 J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 90 10 4.83 5.33 Q 00 20 2.54 4 R 0.080 10 2.04 2.79 S 0.045 0.055 1.15 1.39 T 35 55 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 1.15 Z 0.080 2.04 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81357733850 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 2N6387/D