Gate protection. Current limit. Overvoltage protection. Limit for unclamped ind. loads. Charge pump Level shifter. Rectifier. Open load detection



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Transcription:

Smar ighside Power Swich for ndusrial Applicaions Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion ) Undervolage and overvolage shudown wih auo-resar and hyseresis Open drain diagnosic oupu Open load deecion in ON-sae CMOS compaible inpu oss of ground and loss of proecion Elecrosaic discharge (ESD) proecion TS 0 E2 Produc Summary Overvolage proecion (AZ) 6 Operaing volage (on).7... 2 On-sae resisance RON 220 mω oad curren (SO) (SO).8 A Curren limiaion (SCr) A Operaing emperaure T a -30 +8 C Sandard PG-TO220AB/ Applicaion µc compaible power swich wih diagnosic feedback for 2 and 2 DC grounded loads in indusrial applicaions All ypes of resisive, inducive and capacive loads Replaces elecromechanical relays, fuses and discree circuis General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, monolihically inegraed in Smar SPMOS echnology. Providing embedded proecive funcions. Sraigh leads olage source Overvolage proecion Curren limi Gae proecion + 3 ogic 2 ESD olage sensor ogic Charge pump evel shifer Recifier imi for unclamped ind. loads Open load deecion Temperaure sensor oad Signal Shor circui deecion oad ) Wih exernal curren limi (e.g. resisor R =0 Ω) in connecion, resisors in series wih and connecions, reverse load curren limied by conneced load. nfineon Technologies AG of 2006-Mar-28

Pin Symbol Funcion - ogic ground TS 0 E2 2 npu, acivaes he power swich in case of logical high signal 3 + Posiive power supply volage, he ab is shored o his pin S Diagnosic feedback, low on failure (oad, ) O Oupu o he load Maximum Raings a Tj = 2 C unless oherwise specified Parameer Symbol alues Uni Supply volage (overvolage proecion see page 3) 6 oad dump proecion 2 ) oaddump = U A + s, U A = 3. 3 R ) = 2 Ω, R = 6.6 Ω, d = 00 ms, = low or high ) oad dump 00 oad curren (Shor circui curren, see page ) self-limied A Juncion emperaure T j +0 C Operaing emperaure range Sorage emperaure range T a T sg -30...+8-0 +0 Power dissipaion (DC), T C 2 C P o 0 W nducive load swich-off energy dissipaion, single pulse = 2, T j,sar = 0 C, T C = 0 C cons. =.8 A, Z = 2.3, 0 Ω: E AS. J Elecrosaic discharge capabiliy (ESD) (uman Body Model) : all oher pins: ESD 2 k acc. M-D883D, mehod 30.7 and ESD assn. sd. S.-993 npu volage (DC) -0.... +6 Curren hrough inpu pin (DC) ±.0 ma Curren hrough saus pin (DC) ±.0 see inernal circui diagrams page 6 Thermal Characerisics Parameer and Condiions Symbol alues Uni Thermal resisance chip - case: juncion - ambien (free air): R hjc R hja min yp max 2. 7 K/W 2) Supply volages higher han (AZ) require an exernal curren limi for he and saus pins, e.g. wih a 0 Ω resisor in he connecion and a kω resisor in series wih he saus pin. A resisor for he proecion of he inpu is inegraed. 3 ) R = inernal resisance of he load dump es pulse generaor ) oad dump is seup wihou he DUT conneced o he generaor per SO 7637- and D 0839 nfineon Technologies AG 2 2006-Mar-28

TS 0 E2 Elecrical Characerisics Parameer and Condiions Symbol alues Uni a Tj = 2 C, = 2 unless oherwise specified min yp max oad Swiching Capabiliies and Characerisics On-sae resisance (pin 3 o ) =.6 A T j =2 C: R ON 90 220 mω T j =0 C: 390 0 Nominal load curren, SO Norm (pin 3 o ) ON = 0., T C = 8 C (SO).6.8 A Oupu curren (pin ) while disconneced or (high) ma pulled up, =30, = 0, see diagram page 7, Tj =-0...+0 C Turn-on ime o 90% : on 2 2 µs Turn-off ime o 0% : off 8 R = 2 Ω, Tj =-0...+0 C Slew rae on d /d on 3 /µs 0 o 30%, R = 2 Ω, Tj =-0...+0 C Slew rae off 70 o 0%, R = 2 Ω, Tj =-0...+0 C -d/d off 6 /µs Operaing Parameers Operaing volage ) Tj =-0...+0 C: (on).7 2 Undervolage shudown Tj =2 C: (under) 2.9. Tj =-0...+0 C: 2.7.7 Undervolage resar Tj =-0...+0 C: (u rs).9 Undervolage resar of charge pump (ucp).6 6.0 see diagram page 3 Undervolage hyseresis (under) 0. (under) = (u rs) - (under) Overvolage shudown Tj =-0...+0 C: (over) 2 2 Overvolage resar Tj =-0...+0 C: (o rs) 0 Overvolage hyseresis Tj =-0...+0 C: (over) 0. Overvolage proecion 6 ) Tj =-0...+0 C: (AZ) 6 70 = ma Sandby curren (pin 3) =0 eakage oupu curren (included in (off) ) =0 Operaing curren (Pin ) 7 ), =, Tj =-0...+0 C T j =-0...+2 C: T j = 0 C: (off) nfineon Technologies AG 3 2006-Mar-28 0 8 2 µa (off) 20 µa 2. ma ) A supply volage increase up o =.6 yp wihou charge pump, - 2 6 ) Meassured wihou load. See also ON(C) in able of proecion funcions and circui diagram page 7.

TS 0 E2 Parameer and Condiions Symbol alues Uni a Tj = 2 C, = 2 unless oherwise specified min yp max Proecion Funcions 8 ) niial peak shor circui curren limi (pin 3 o ) 9), ( max 0 µs if ON > ON(SC) ) T j =-0 C: T j =2 C: T j =+0 C: Repeiive overload shudown curren limi (SCp) (SCr) ON = 8, T j = T j (see iming diagrams, page 2) A Shor circui shudown delay afer inpu pos. slope ON > ON(SC), T j =-0..+0 C: d(sc) 0 µs min value valid only, if inpu "low" ime exceeds 60 µs Oupu clamp (inducive load swich off) a = - ON(C) = 0 ma, T j =-0..+0 C: ON(C) 6 68 73 = A, T j =-0..+0 C: 7 Shor circui shudown deecion volage (pin 3 o ) ON(SC) 8. Thermal overload rip emperaure T j 0 C Thermal hyseresis T j 0 K Reverse baery (pin 3 o ) 0 ) - 32 9 2 23 A Diagnosic Characerisics Open load deecion curren (on-condiion) T j =-0..0 C: (O) 2 0 ma 7) Add, if > 0, add, if >. 8) negraed proecion funcions are designed o preven C desrucion under faul condiions described in he daa shee. Faul condiions are considered as "ouside" normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 9) Shor circui curren limi for max. duraion of d(sc) max =0 µs, prior o shudown 0) Requires 0 Ω resisor in connecion. The reverse load curren hrough he inrinsic drain-source diode has o be limied by he conneced load. Noe ha he power dissipaion is higher compared o normal operaing condiions due o he volage drop across he inrinsic drain-source diode. The emperaure proecion is no acive during reverse curren operaion! npu and Saus currens have o be limied (see max. raings page 2 and circui page 7). nfineon Technologies AG 2006-Mar-28

TS 0 E2 Parameer and Condiions Symbol alues Uni a Tj = 2 C, = 2 unless oherwise specified min yp max npu and Saus Feedback ) npu urn-on hreshold volage T j =-0..+0 C: (T+). 2. npu urn-off hreshold volage T j =-0..+0 C: (T-).0 npu hreshold hyseresis (T) 0. Off sae inpu curren (pin 2), = 0. (off) 30 µa On sae inpu curren (pin 2), = (on) 0 2 70 µa Saus invalid afer posiive inpu slope d( SC) 0 µs (shor circui) Tj=-0... +0 C: Saus invalid afer posiive inpu slope d() 300 00 µs (open load) Tj=-0... +0 C: Saus oupu (open drain) Zener limi volage Tj =-0...+0 C, = +0 ua: low volage Tj =-0...+0 C, = +.6 ma: (high) (low).0 6 0. ) f a ground resisor R is used, add he volage drop across his resisor. nfineon Technologies AG 2006-Mar-28

TS 0 E2 Truh Table Normal operaion Open load Shor circui o Shor circui o Overemperaure Undervolage Overvolage npu- level Oupu level 2 ) Saus 0 E2 ( 3) ) = "ow" evel = don' care Z = high impedance, poenial depends on exernal circui = "igh" evel Saus signal afer he ime delay shown in he diagrams (see fig. page 3) Terms npu circui (ESD proecion) 2 3 R ON R ESD- ZD ZD2 ZD 6 yp., ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o ). 2) Power Transisor off, high impedance. 3) ow resisance shor o oupu may be deeced in ON-sae by he no-load-deecion nfineon Technologies AG 6 2006-Mar-28

Saus oupu + TS 0 E2 Overvol. and reverse ba. proecion + Z2 R (ON) R ogic ESD- ZD ESD-Zener diode: 6 yp., max ma; R (ON) < 20 Ω a.6 ma, ESD zener diodes are no o be used as volage clamp a DC condiions. Operaion in his mode may resul in a drif of he zener volage (increase of up o ). R Z R Signal Z = 6.2 yp., Z2 = 70 yp., R = 0 Ω, R, R= kω Shor circui deecion Faul Condiion: ON > 8. yp.; high + Open-load deecion ON-sae diagnosic condiion: ON < R ON * (O) ; high + ON ogic uni Shor circui deecion ogic uni ON Open load deecion ON nducive and overvolage oupu clamp + Z disconnec ON 3 ON clamped o 68 yp. 2 Any kind of load. n case of npu=high is - (T+). Due o >0, no = low signal available. nfineon Technologies AG 7 2006-Mar-28

disconnec wih pull up 2 3 Any kind of load. f > - (T+) device says off Due o >0, no = low signal available. disconnec wih energized inducive load high 2 3 Normal load curren can be handled by he iself. disconnec wih charged exernal inducive load TS 0 E2 nducive oad swich-off energy dissipaion = E E AS Z { R Energy sored in load inducance: E = /2 2 While demagneizing load inducance, he energy dissipaed in is E AS = E + E - E R = ON(C) i () d, E oad E E R wih an approximae soluion for R > 0 Ω: E AS = 2 R ( + (C) ) ln R (+ (C) ) Maximum allowable load inducance for a single swich off = f ( ); T j,sar = 0 C,T C = 0 C cons., = 2, R = 0 Ω [m] 0000 high 2 S 3 000 D 00 f oher exernal inducive loads are conneced o he, addiional elemens like D are necessary. 0 2 3 6 [A] nfineon Technologies AG 8 2006-Mar-28

Typ. ransien hermal impedance chip case Z hjc = f( p, D), D= p /T Z hjc [K/W] 0 TS 0 E2 0. D= 0. 0.2 0. 0.0 0.02 0.0 0 0.0 E- E- E-3 E-2 E- E0 E p [s] nfineon Technologies AG 9 2006-Mar-28

TS 0 E2 Opions Overview igh-side swich, npu proecion, ESD proecion, load dump and reverse baery proecion wih 0 Ω in connecion, proecion agains loss of ground Type ogic version Overemperaure proecion wih hyseresis Tj >0 C, lach funcion ) ) Tj >0 C, wih auo-resar on cooling Shor circui o proecion swiches off when ON >3. yp. and > 7 yp ) (when firs urned on afer approx. 0 µs) swiches off when ON >8. yp. ) (when firs urned on afer approx. 0 µs) Achieved hrough overemperaure proecion Open load deecion in OFF-sae wih sensing curren 30 µa yp. in ON-sae wih sensing volage drop across power ransisor Undervolage shudown wih auo resar Overvolage shudown wih auo resar 6 ) Saus feedback for overemperaure shor circui o shor o open load undervolage overvolage Saus oupu ype CMOS Open drain Oupu negaive volage ransien limi (fas inducive load swich off) o - ON(C) oad curren limi high level (can handle loads wih high inrush currens) low level (beer proecion of applicaion) Proecion agains loss of TS0E2 E - 7 ) - - ) ach excep when - < ON(SC) afer shudown. n mos cases = 0 afer shudown ( 0 only if forced exernally). So he device remains lached unless < ON(SC) (see page ). No lach beween urn on and d(sc). ) Wih lach funcion. Reseed by a) npu low, b) Undervolage 6) No auo resar afer overvolage in case of shor circui 7) ow resisance shor o oupu may be deeced in ON-sae by he no-load-deecion nfineon Technologies AG 0 2006-Mar-28

Timing diagrams TS 0 E2 Figure a: urn on: Figure 2b: Swiching an inducive load d( ) d() A *) open drain A in case of oo early =high he device may no urn on (curve A) d( ) approx. 0 µs Figure 2a: Swiching a lamp, (O) *) if he ime consan of load is oo large, open-load-saus may occur nfineon Technologies AG 2006-Mar-28

Figure 3a: Turn on ino shor circui, Figure 3c: Shor circui while on: TS 0 E2 d(sc) **) d(sc) approx. µs if - > 8. yp. **) curren peak approx. 20 µs Figure 3b: Turn on ino overload, Figure a: Overemperaure: Rese if T j <T j (SCp) (SCr) T J eaing up may require several seconds, - < 8. yp. nfineon Technologies AG 2 2006-Mar-28

Figure a: Open load: deecion in ON-sae, urn on/off o open load Figure 6a: Undervolage: TS 0 E2 d() (under) (u cp) (u rs) open open drain Figure b: Open load: deecion in ON-sae, open load occurs in on-sae Figure 6b: Undervolage resar of charge pump on ON(C) d( O) d( O2) off-sae on-sae (over) off-sae (u rs) (o rs) normal open normal (under) (u cp) charge pump sars a (ucp) =.6 yp. d( O) = bd µs yp., d( O2) = bd µs yp nfineon Technologies AG 3 2006-Mar-28

Figure 7a: Overvolage: TS 0 E2 ON(C) (over) (o rs) Figure 9a: Overvolage a shor circui shudown: (o rs) Oupu shor o shor circui shudown Overvolage due o power line inducance. No overvolage auoresar of afer shor circui shudown. nfineon Technologies AG 2006-Mar-28

TS 0 E2 Package and Ordering Code All dimensions in mm Sandard PG-TO220AB/ TS 0 E2 Ordering code SP0002229 Published by nfineon Technologies AG, S.-Marin-Srasse 3, D-8669 München nfineon Technologies AG 2006 All Righs Reserved. Aenion please! The informaion herein is given o describe cerain componens and shall no be considered as a guaranee of characerisics. Terms of delivery and righs o echnical change reserved. We hereby disclaim any and all warranies, including bu no limied o warranies of non-infringemen, regarding circuis, descripions and chars saed herein. nfineon Technologies is an approved CECC manufacurer. nformaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares nfineon Technologies Office in Germany or our nfineon Technologies Represenaives worldwide (see address lis). Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares nfineon Technologies Office. PG-TO220AB/, Opion E303 Ordering code TS 0 E2 E303 SP00022227 nfineon Technologies Componens may only be used in lifesuppor devices or sysems wih he express wrien approval of nfineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. ife suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. f hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. nfineon Technologies AG 2006-Mar-28